BTS5235-2G

BTS5235-2G INFINEON | Alldatasheet

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Technical content

Smart High-Side Power Switch Data Sheet, Rev.1.1, Sep 2008 Automotive Power

Data Sheet 2 Rev.1.1, 2007-09-01 Smart High-Side Power Switch BTS5235-2G Table of Contents Table of Contents

BTS5235-2G PG-DSO-20-43 BTS5235-2G Data Sheet 3 Rev.1.1, 2007-09-01 Smart High-Side Power Switch PROFET Two Channels, 60 mΩ BTS5235-2G 1O v e r v i e w Basic Features

• Very low standby current
• 3.3 V and 5 V compatible logic pins
• Improved electromagnetic compatibility (EMC)
• Stable behavior at under voltage
• Logic ground independent from load ground
• Secure load turn-off while logic ground disconnected
• Optimized inverse current capability
• Green Product (RoHS compliant)
• AEC Qualified Product Summary The BTS5235-2G is a dual channel high-side power switch in PG-DSO-20-43 package providing embedded protective functions. The power transistor is built by a N-channel vert ical power MOSFET with charge pump. The device is monolithically integrated in Smart SIPMOS technology. Operating voltage Vbb(on) 4.5 … 28 V Over voltage protection Vbb(AZ) 41 V On-State resistance RDS(ON) 60 mΩ Nominal load current (one channel active) IL(nom) 3.3 A Current limitation IL(LIM) 23 A Current limitation repetitive IL(SCr) 6A Standby current for whole device with load Ibb(OFF) 2.5 µA

Smart High-Side Power Switch BTS5235-2G Overview Data Sheet 4 Rev.1.1, 2007-09-01 Protective Functions

• Reverse battery protection without external components
• Short circuit protection
• Overload protection
• Multi-step current limitation
• Thermal shutdown with restart
• Thermal restart at reduced current limitation
• Over voltage protection without external resistor
• Loss of ground protection
• Electrostatic discha rge protection (ESD) Diagnostic Functions
• Enhanced IntelliSense si gnal for each channel
• Enable function for diagnosis pins (IS1 and IS2)
• Proportional load current se nse signal by current source
• High accuracy of current sense signal at wide load current range
• Open load detection in ON-state by load current sense
• Over load (current limitatio n) diagnosis in ON-state, signalling by voltage source
• Latched over temperature diagnosis in ON-state, signalling by voltage source
• Open load detection in OFF-stat e, signalling by voltage source

Applications

• µC compatible high-side power switch with diagnostic feedback for 12 V grounded loads
• All types of resistive, in ductive and capacitive loads
• Suitable for loads with high in rush currents, so as lamps
• Suitable for loads with low currents, so as LEDs
• Replaces electromechanical relays, fuses and discrete circuits

Data Sheet 5 Rev.1.1, 2007-09-01 Smart High-Side Power Switch BTS5235-2G Block Diagram

2 Block Diagram

The BTS5235-2G is a dual channel high -side power switch (two times 60 m Ω) in PG-DSO-20-43 package providing embedded protective functions. The Enhanced IntelliSense pins IS1 and IS2 provide a sophisticated diagnostic feedback signal including current sense function, over load and over temperature alerts in ON-state and open load alert in OFF-state. The diagnosis signals can be switched on and off by the sense enable pin SEN. An integrated ground resistor as well as integrated resistors at each input pin (IN1, IN2, SEN) reduce external components to a minimum. The power transistor is built by a N-channel vertical power MOSFET with charge pump. The inputs are ground referenced CMOS compatible. Th e device is monolithically integrated in Smart SIPMOS technology. Figure 1 Block Diagram channel 1 internal power supply ESD protection OUT2 channel 2 control and protection circuit equivalent to channel 1 IN1 IS1 SEN GND RGND IS2 IN2 open load detection logic gate control charge pump VBB OUT1 clamp for inductive load multi step load current limitation load current sense over load detection temperature sensor

Smart High-Side Power Switch BTS5235-2G Block Diagram Data Sheet 6 Rev.1.1, 2007-09-01

2.1 Terms

Following figure shows all terms used in this data sheet. Figure 2 Terms In all tables of electrical characteristics is valid: Channel related symbols without channel number are valid for each channel separately. Terms2ch.emf IIN1 VIN1 OUT1 IIN2 VIN2 VIS1 IIS1 VIS2 IIS2 Vbb VSEN ISEN I L1 VOU T2 VOU T1 VDS2 VDS1 I L2 GND IGN D Ibb IN1 IN2 IS1 IS2 SEN VBB OUT2 BTS5235-2G

Data Sheet 7 Rev.1.1, 2007-09-01 Smart High-Side Power Switch BTS5235-2G Pin Configuration

3 Pin Configuration

3.1 Pin Assignment BTS5235-2G

Figure 3 Pin Configuration PG-DSO-20-43

3.2 Pin Definitions and Functions

4 IN1 I Input signal for channel 1

7 IN2 I Input signal for channel 2

5 IS1 O Diagnosis output signal channel 1

6 IS2 O Diagnosis output signal channel 2

8 SEN I Sense Enable input for channel 1&2

17, 18 ,19 OUT1 1) All output pins of each channel have to be connected O Protected high-side power output channel 1 12, 13, 14 OUT2 1) O Protected high-side power output channel 2

3 GND – Ground connection

1, 10, 11, 15, 16, 20 VBB 2) All VBB pins have to be connected – Positive power supply for logic s upply as well as output power supply 2, 9 nc – Not connected (top view) OUT1 OUT1 OUT1 VBB VBB VBB GND IN1 IS1 IS2 VBB IN2 nc nc VBB SEN OUT2 OUT2 OUT2 VBB

Smart High-Side Power Switch BTS5235-2G

Electrical Characteristics

Data Sheet 8 Rev.1.1, 2007-09-01

4 Electrical Characteristics

4.1 Absolute Maximum Ratings

Absolute Maximum Ratings 1) Tj = -40 °C to +150 °C; all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) 1) Not subject to production test, specified by design. Pos. Parameter Symbol Limit Values Unit Conditions min. max. Supply Voltage

4.1.1 Supply voltage Vbb -16 28 V

4.1.2 Supply voltage for fu ll short circuit protection

(single pulse) Vbb(SC) 02 8 V L = 8 µH, R = 0.2 Ω 2)

4.1.3 Voltage at power transistor VDS –5 2 V

4.1.4 Supply Voltage for Load Dump protection Vbb(LD) –4 1 V RI = 2 Ω 3)

RL = 6.8 Ω Power Stages

4.1.5 Load current IL – IL(LIM) A 4)

4.1.6 Maximum energy dissipation single pulse EAS –1 1 0 m J IL(0) = 2 A 5)

Tj(0) = 150 °C Vbb=13,5V 4.1.7 Power dissipation (DC) Ptot –1 . 4 W Ta = 85 °C 6) Tj ≤ 150 °C Logic Pins

4.1.8 Voltage at input pin VIN -5

-16 10 V t ≤ 2m i n . 4.1.9 Current through input pin IIN -2.0 -8.0 2.0 mA t ≤ 2m i n .

4.1.10 Voltage at sense enable pin VSEN -5

-16 10 V t ≤ 2m i n . 4.1.11 Current through sense enable pin ISEN -2.0 -8.0 2.0 mA t ≤ 2m i n .

4.1.12 Current through sense pin IIS -25 10 mA

4.1.13 Junction Temperature Tj -40 150 °C

4.1.14 Dynamic temperature increase while

∆Tj –6 0 °C

4.1.15 Storage Temperature Tstg -55 150 °C

4.1.16 ESD susceptibility HBM

IN, SEN IS OUT VESD kV according to EIA/JESD 22-A 114B

Data Sheet 9 Rev.1.1, 2007-09-01 Smart High-Side Power Switch BTS5235-2G Note: Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Note: Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are not designed for continuous repetitive operation. 2) R and L describe the complete circuit impedance including line, contact and generator impedances 3) Load Dump is specified in ISO 7636, RI is the internal resistance of the Load Dump pulse generator 4) Current limitation is a protection featur e. Operation in current limitation is considered as “outside” normal operating range. Protection features are not designed for continuous repetitive operation. 5) Pulse shape represents inductive switch off: IL(t) = IL(0) * (1 - t / tpulse); 0 < t < tpulse 6) Device mounted on PCB (50 mm × 50 mm × 1.5mm epoxy, FR4) with 6 cm2 copper heatsinking area (one layer, 70 µm thick) for Vbb connection. PCB is vertical without blown air.

Smart High-Side Power Switch BTS5235-2G Block Description and Electrical Characteristics Data Sheet 10 Rev.1.1, 2007-09-01

5 Block Description and El ectrical Characteristics

5.1 Power Stages

The power stages are built by N-channel vertical power MOSFETs (DMOS) with charge pumps.

5.1.1 Output On-State Resistance

The on-state resistance RDS(ON) depends on the supply voltage as well as the junction temperature Tj. Figure 4 shows that dependencies for the typical on-state resistan ce. The behavior in reverse polarity mode is described in Section 6.2. Figure 4 Typical On-State Resistance

5.1.2 Input Circuit

Figure 5 shows the input circuit of the BTS5235-2G. There is an integrated input resistor that makes external components obsolete. The current sink to ground ensures th at the device switches off in case of open input pin. The zener diode protects the input circuit against ESD pulses. Figure 5 Input Circuit (IN1 and IN2) -50 -25 0 25 50 75 100 125 150 RDS(ON) /mΩ T /°C 100 120 140 160 0 5 10 15 20 25 RDS(ON) /mΩ Vbb /V Vbb = 13.5 V Tj = 25 °C IN RIN IIN GND RGN D Input.emf

Data Sheet 11 Rev.1.1, 2007-09-01 Smart High-Side Power Switch BTS5235-2G Block Description and Electrical Characteristics A high signal at the input pin causes the power DMOS to switch on with a dedicated slope, which is optimized in terms of EMC emission. Figure 6 Switching a Load (resistive)

5.1.3 Inductive Output Clamp

When switching off inductive loads with high-side switches, the voltage VOUT drops below ground potential, because the inductance intends to continue driving the current. Figure 7 Output Clamp (OUT1 and OUT2) To prevent destruction of the device, there is a voltage clamp mechanism implemented that keeps that negative output voltage at a certain level ( VOUT(CL)). See Figure 7 and Figure 8 for details. Nevertheless, the maximum allowed load inductance is limited. Figure 8 Switching an Inductance IN VOUT t SwitchOn.emf tON tOFF t 90% 10% 70% dV /dtON 30% 70% dV /dtOFF 30% OutputClamp.emf OUT GND Vbb VBB RL VOU T I L VOU T InductiveLoad.emf t IL t VOU T(C L) Vbb IN = 5V IN = 0V

Smart High-Side Power Switch BTS5235-2G Block Description and Electrical Characteristics Data Sheet 12 Rev.1.1, 2007-09-01 Maximum Load Inductance While demagnetization of inductive loads, energy has to be dissipated in the BTS5235-2G. This energy can be calculated with following equation: (1) This equation simplifies under the assumption of RL = 0: (2) The energy, which is converted into heat, is limited by the thermal design of the component. See Figure 9 for the maximum allowed energy dissipation. Figure 9 Maximum Energy Di ssipation Single Pulse, Tj,Start = 150 °C EV bb VOUT(CL)–() VOUT(CL) RL VOUT(CL)  IL+ L RL E 1 2---LIL 2 1 Vbb VOUT(CL) ⋅= VB B = 13.5V 100 1000 10000 02468 1 0 1 2 IL [A] EAS [mJ]

Data Sheet 13 Rev.1.1, 2007-09-01 Smart High-Side Power Switch BTS5235-2G Block Description and Electrical Characteristics

5.1.4 Electrical Characteristics

Unless otherwise specified: Vbb = 9 V to 16 V, Tj = -40 °C to +150 °C, typical values: Vbb = 13.5 V, Tj = 25 °C Pos. Parameter Symbol Limit Values Unit Test Conditions min. typ. max. General

5.1.1 Operating voltage

Vbb 4.5 – 28 V VIN = 4.5 V RL = 12 Ω VDS < 0.5 V

5.1.2 Operating current

1.8 3.6 4.0 8.0 mA VIN = 5 V

5.1.3 Standby current for whole device with load Ibb(OFF)

1.5 2.5 2.5 µA VIN = 0 V VSEN = 0 V Tj = 25 °C Tj = 85 °C1) Tj = 150 °C Output Characteristics

5.1.4 On-State resi stance per channel RDS(ON)

mΩ IL = 2.5 A Tj = 25 °C Tj = 150 °C

5.1.5 Output voltage drop limitation at small load

VDS(NL) –4 0– m V IL < 0.25 A

5.1.6 Nominal load current per channel

IL(nom) 3.3 2.5 A Ta = 85 °C Tj ≤ 150 °C 2) 3)

5.1.7 Output clamp VOUT(CL) -24 -20 -17 V IL = 40 mA

5.1.8 Output leakage current per channel IL(OFF) –0 . 1 6 . 0 µA VIN = 0 V

5.1.9 Inverse current capability -IL(inv) –3– A 1)

5.1.11 L-input level VIN(L) -0.3 – 1.0 V 5.1.12 H-input level VIN(H) 2 . 5–5 . 7 V 5.1.13 L-input current IIN(L) 31 8 7 5 µA VIN = 0.4 V

5.1.14 H-input current IIN(H) 10 38 75 µA VIN = 5 V

5.1.15 Turn-on time to

90% Vbb tON –1 0 0 2 5 0 µs RL = 12 Ω Vbb = 13.5 V

5.1.16 Turn-off time to

10% Vbb tOFF –1 2 0 2 5 0 µs RL = 12 Ω Vbb = 13.5 V

Smart High-Side Power Switch BTS5235-2G Block Description and Electrical Characteristics Data Sheet 14 Rev.1.1, 2007-09-01 Note: Characteristics show the deviation of parameter at the given supply voltage and junction temperature. Typical values show the typical parameters expected from manufacturing.

5.2 Thermal Resistance

5.1.17 slew rate 30% to 70% Vbb dV/ dtON 0 . 10 . 2 50 . 5 V / µs RL = 12 Ω Vbb = 13.5 V 5.1.18 slew rate 70% to 30% Vbb -dV/ dtOFF 0 . 10 . 2 50 . 5 V / µs RL = 12 Ω Vbb = 13.5 V 1) Not subject to production test, specified by design 2) Device mounted on PCB (50 mm × 50 mm × 1.5mm epoxy, FR4) with 6 cm2 copper heatsinking area (one layer, 70 µm thick) for Vbb connection. PCB is vertical without blown air. 3) Not subject to production test, parameters are calculated from RDS(ON) and Rth Pos. Parameter Symbol Limit Values Unit Conditions Min. Typ. Max.

5.2.1 Junction to Case 1)

1) Not subject to production test, specified by design. RthJC –– 3 5 K / W –

5.2.2 Junction to Ambient

2) Device mounted on PCB (50 mm × 50 mm × 1.5mm epoxy, FR4) with 6 cm2 copper heatsinking area (one layer, 70 µm thick) for Vbb connection. PCB is vertical without blown air. Unless otherwise specified: Vbb = 9 V to 16 V, Tj = -40 °C to +150 °C, typical values: Vbb = 13.5 V, Tj = 25 °C Pos. Parameter Symbol Limit Values Unit Test Conditions min. typ. max.

Data Sheet 15 Rev.1.1, 2007-09-01 Smart High-Side Power Switch BTS5235-2G Protection Functions

6 Protection Functions

The device provides embedded protecti ve functions. Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are neither designed for continuous nor repetitive operation.

6.1 Over Load Protection

The load current IOUT is limited by the device itself in case of over load or short circuit to ground. There are three steps of current limitation which are selected automatically depending on the voltage VDS across the power DMOS. Please note that the voltage at the OUT pin is Vbb - VDS. Please refer to following figure for details. Figure 10 Current Limitation (minimum values) Current limitation is realized by increasing the resistance of the device which leads to rapid temperature rise inside. A temperature sensor for each channel causes an overheat ed channel to switch off to prevent destruction. After cooling down with thermal hysteresis, the channel switches on again. Please refer to Figure 11 for details. Figure 11 Shut Down by Over Temperature with Current Limitation In short circuit condition, the load current is initially limited to IL(LIM). After thermal restart, the current limitation level is reduced to IL(SCr). The current limitation level is reset to IL(LIM) by switching off the device (VIN = 0 V). CurrentLimitation.emf IL 5 1 01 52 0 VDS25 IN IL IIS t IL(LIM) IL(SC r) t t OverLoad .emf tOFF(SC)

Smart High-Side Power Switch BTS5235-2G Protection Functions Data Sheet 16 Rev.1.1, 2007-09-01

6.2 Reverse Polarity Protection

In case of reverse polarity, the intrinsic body diode causes power dissipation. Additional power is dissipated by the integrated ground resistor. Use following form ula for estimation of total power dissipation Pdiss(rev) in reverse polarity mode. (3) The reverse current through the intrinsic body diode has to be limited by the connected load. The current through sense pins IS1 and IS2 has to be limited (please refer to maximum ratings on Page 8). The current through the ground pin (GND) is limited internally by RGND. The over-temperature protection is not active during reverse polarity.

6.3 Over Voltage Protection

In addition to the output clamp for inductive loads as described in Section 5.1.3, there is a clamp mechanism for over voltage protection. Because of the integrated grou nd resistor, over voltage protection does not require external components. As shown in Figure 12, in case of supply voltages greater than Vbb(AZ), the power transistor switches on and the voltage across logic part is clamped. As a result, the internal ground potential rises to Vbb - Vbb(AZ). Due to the ESD zener diodes, the potential at pin IN1, IN2 and SEN rises almost to that potential, depending on the impedance of the connected circuitry. Figure 12 Over Voltage Protection

6.4 Loss of Ground Protection

In case of complete loss of the device ground connections, but connected load ground, the BTS5235-2G securely changes to or stays in off state. Pdiss(rev) VDS(rev) IL⋅() all channels Vbb RGND OUT VBB OverVoltage .emf VOU TRGN D logic GND IN IS SEN RSEN RIN ZDESD ZDAZ internal ground

Data Sheet 17 Rev.1.1, 2007-09-01 Smart High-Side Power Switch BTS5235-2G Protection Functions

6.5 Electrical Characteristics

Unless otherwise specified: Vbb = 9 V to 16 V, Tj = -40 °C to +150 °C, typical values: Vbb = 13.5 V, Tj = 25 °C Pos. Parameter Symbol Limit Values Unit Conditions min. typ. max. Over Load Protection

6.5.1 Load current limitation

IL(LIM) 2 3–4 2 A VDS = 7 V 1 4–2 8 A VDS = 14 V 3– 1 4 A VDS = 28 V 1) 2) 1) Please note that an external forced VDS must not exceed Vbb + |VOUT(CL)|

6.5.2 Repetitive short circuit current limitation IL(SCr) –6– A Tj = Tj(SC)

2) Not subject to production test, specified by design 6.5.3 Initial short ci rcuit shut down time tOFF(SC) 0.5 ms TjStart = 25 °C 2)

6.5.4 Thermal shut down temperature Tj(SC) 150 170

– °C

6.5.5 Thermal hysteresis ∆Tj –7– K 2)

6.5.6 Drain-Source diode voltage ( VOUT > Vbb) -VDS(rev) –– 9 0 0 m V IL = -3.5 A Vbb = -13.5 V Tj = 150 °C 6.5.7 Reverse current through GND pin -IGND –6 5– m A Vbb = -13.5 V 2) Ground Circuit

6.5.8 Integrated Resistor in GND line RGND 115 220 350 Ω

6.5.9 Over voltage protection Vbb(AZ) 41 47 53 V Ibb = 2 mA

6.5.10 Output leakage current while GND

IL(GND) ––1 m A IIN = 0, ISEN = 0, IIS = 0, IGND = 0 2) 3) 3) Pins not connected

Smart High-Side Power Switch BTS5235-2G Diagnosis Data Sheet 18 Rev.1.1, 2007-09-01

7 Diagnosis

For diagnosis purpose, the BTS5235-2G provides an Enhanced In telliSense signal at pins IS1 and IS2. This means in detail, the current sense signal IIS, a proportional signal to the load current (ratio kILIS = IL / IIS), is provided as long as no failure mode (see Table 1) occurs. In case of a failure mode, the voltage VIS(fault) is fed to the diagnosis pin. Figure 13 Block Diagram: Diagnosis Table 1 Truth Table 1) 1) L = Low Level, H = High Level, Z = high impedance, pot ential depends on leakage currents and external circuit Operation Mode Input Level Output Level Diagnostic Output SEN = H SEN = L Normal Operation (OFF) L GND Z Z Short Circuit to GND GND Z Z Over Temperature Z Z Z Short Circuit to Vbb Vbb VIS = VIS(fault) Z Open Load < VOUT(OL) > VOUT(OL) Z VIS = VIS(fault) Z Z Normal Operation (ON) H ~Vbb IIS = IL / kILIS Z Current Limitation < Vbb VIS = VIS(fault) Z Short Circuit to GND ~GND VIS = VIS(fault) Z Over Temperature Z VIS = VIS(fault) Z Short Circuit to Vbb Vbb IIS < IL / kILIS Z Open Load Vbb ZZ channel 1 channel 2 IIS2 OUT2 IIS1 OUT1IS1 µC IN1 VOU T(OL)

1 VIS( fault)

Sense.emf RIS1 RIS2 Rlim Rlim over temperature over load gate control RIN2 open load @ offSEN RSEN latch

Data Sheet 19 Rev.1.1, 2007-09-01 Smart High-Side Power Switch BTS5235-2G Diagnosis

7.1 ON-State Diagnosis

The standard diagnosis signal is a current sense signal proportional to the load current. The accuracy of the ratio (kILIS = IL / IIS) depends on the temperature. Please refer to following Figure 14 for details. Usually a resistor RIS is connected to the current sense pin. It is recommended to use sense resistors RIS > 500 Ω. A typical value is 4.7 kΩ. Figure 14 Current sense ratio kILIS Details about timings between the diagnosis signal IIS and the output voltage VOUT and load current IL in ON-state can be found in Figure 15. Figure 15 Timing of Diagnosis Signal in ON-state In case of over-load as well as over-temperature, the voltage VIS(fault) is fed to the diagnosis pins as long as the according input pin is high. This means, even if the overload disappears after the first thermal shutdown or when the device keeps switching on and off in over-load co ndition (thermal toggling), the diagnosis signal ( VIS(fault)) is constantly available. Please refer to Figure 16 for details. Please note, that if the overload disappears before the first thermal shutdown, the diagnosis signal (VIS(fault)) may remain for approximately 300 µs longer than the duration of the overload. 1) The curves show the behavior based on characterization dat a. The marked points are guaranteed in this Data Sheet in Section 7.4 (Position 7.4.6). 1000 2000 3000 4000 5000 6000 7000 8000 0 0.5 1 1.5 2 2.5 3 3.5 4 kILIS IL /A dummy Tj = 150°C dummy Tj = -40°C SwitchOn.emf IN VOU T IIS t t t IL t ON tON tsIS( ON) tsIS( L C) OFF normal operation over load (current limitation) tsIS( OVL ) VIS(fault) / RS

Smart High-Side Power Switch BTS5235-2G Diagnosis Data Sheet 20 Rev.1.1, 2007-09-01 As a result open load and over load including over temperature can be differentiated in ON-state. Consideration must be taken in the selection of the sense resistor in order to distinguish nominal currents from the overload/short circuit fault state. A potential of 5 V at the sense pin can be achieved with a big sense resistor even with currents being much smaller than the current limitation. Figure 16 Timing of Diagnosis Si gnal in Over Load Condition

7.2 OFF-State Diagnosis

Details about timings between the diagnosis signal IIS and the output voltage VOUT and load current IL in OFF-state can be found in Figure 17. For open load diagnosis in OFF-state an external output pull-up resistor ( ROL) is necessary. Figure 17 Timing of Diagnosis Signal in OFF-state For calculation of the pull-up resistor, just the external leakage current Ileakage and the open load threshold voltage VOUT(OL) has to be taken into account. (4) Ileakage defines the leakage current in the complete system e. g. caused by humidity. There is no internal leakage current from out to ground at BTS5235-2G. Vbb(min) is the minimum supply voltage at which the open load diagnosis in off state must be ensured. To reduce the stand-by current of the system, an open load resistor switch ( SOL) is recommended. OverLoad.emf IN IIS t t IL ON tsIS( OVL ) OFF VIS( fault) / RS over temperatureover load (current limitation) OFF IL(LIM) SwitchOff.emf IN VOU T IIS t t t Open Load, pull-up resistor active VIS( fault) / RS ON OFF td( fault) ts( fa u lt) pul l -up resi stor inactive ROL Vbb(min) VOUT(OL,max)– Ileakage

Data Sheet 21 Rev.1.1, 2007-09-01 Smart High-Side Power Switch BTS5235-2G Diagnosis

7.3 Sense Enable Function

The diagnosis signals have to be switched on by a high signal at sense enable pin (SEN). See Figure 18 for details on the timing between SEN pin and diagnosis signal IIS. Please note that the diagnosis is disabled, when no signal is provided at pin SEN. Figure 18 Timing of Sense Enable Signal The SEN pin circuit is designed equally to the input pin. Please refer to Figure 5 for details. The resistors Rlim are recommended to limit the current through the sense pins IS1 and IS2 in case of reverse polarity and over voltage. Please refer to maximum ratings on Page 8. The stand-by current of the BTS5235-2G is minimized, when both input pins (IN1 and IN2) and the sense enable pin (SEN) are on low level.

7.4 Electrical Characteristics

Vbb = 9 V to 16 V, Tj = -40 °C to +150 °C, VSEN = 5 V, (unless otherwise specified) typical values: Vbb = 13.5 V, Tj = 25 °C Pos. Parameter Symbol Limit Values Unit Conditions min. typ. max. General Definition

7.4.1 Diagnostics signal in failure mode VIS(fault) 5–9 V VIN = 0 V

VOUT = Vbb IIS = 1 mA

7.4.2 Diagnostics signal curr ent limitation in failure

IIS(LIM) 3–– m A VIN = 0 V VOUT = Vbb Open Load at OFF-State 7.4.4 Sense signal invalid after negative input slope td(fault) –– 1 . 2 m s VIN = 5 V to 0 V VOUT = Vbb

7.4.5 Fault signal settling time ts(fault) –– 2 0 0 µs VIN = 0 V

VOUT = 0 V to > VOUT(OL) IIS = 1 mA tdIS(SEN )tsIS( SEN) t SEN.emf tsIS(SEN) t tdIS(SEN)IIS SEN

Smart High-Side Power Switch BTS5235-2G Diagnosis Data Sheet 22 Rev.1.1, 2007-09-01 Load Current Sense ON-State

7.4.6 Current sense ratio kILIS –2 8 7 0– VIN = 5 V

IL = 40 mA IL = 1.3 A IL = 2.2 A IL = 4.0 A 1000 2300 2410 2465 4035 3050 2920 2850 8000 3580 3380 3275 Tj = -40 °C IL = 40 mA IL = 1.3 A IL = 2.2 A IL = 4.0 A 1400 2465 2520 2580 3410 2920 2875 2870 6000 3275 3220 3160 Tj = 150 °C IL = 3.5 A 7.4.8 Current sense leakage/offset current IIS(LH) –– 3 . 5 µA VIN = 5 V IL = 0 A

7.4.9 Current sense leakage, while diagnosis

IIS(dis) ––1 µA VSEN = 0 V IL = 3.5 A

7.4.10 Current sense settling time to IIS static ±10%

after positive input slope tsIS(ON) –– 350 µs VIN = 0 V to 5 V IL = 3.5 A 1)

7.4.11 Current sense settling time to IIS static ±10%

after change of load current tsIS(LC) –– 5 0 µs VIN = 5 V IL = 1.3 A to 2.2 A 1) Over Load in ON-State

7.4.12 Over load detection current IL(OVL) 8– IL(LIM) A VIN = 5 V

VIS = VIS(fault)

7.4.13 Sense signal settling time in overload condition tsIS(OVL) –– 2 0 0 µs VOUT = 2 V

VIN = 0 V to 5 V Sense Enable 7.4.15 L-input level VSEN(L) -0.3 – 1.0 V 7.4.16 H-input level VSEN(H) 2 . 5–5 . 7 V 7.4.17 L-input current ISEN(L) 31 8 7 5 µA VSEN = 0.4 V

7.4.18 H-input current ISEN(H) 10 38 75 µA VSEN = 5 V

7.4.19 Current sense settling time tsIS(SEN) –3 2 5 µs VSEN = 0 V to 5 V

VIN = 0 V VOUT > VOUT(OL)

7.4.20 Current sense deactivation time tdIS(SEN) –– 2 5 µs VSEN = 5 V to 0 V

IL = 3.5 A RS = 5 kΩ 1) 1) Not subject to production test, specified by design Vbb = 9 V to 16 V, Tj = -40 °C to +150 °C, VSEN = 5 V, (unless otherwise specified) typical values: Vbb = 13.5 V, Tj = 25 °C Pos. Parameter Symbol Limit Values Unit Conditions min. typ. max.

Data Sheet 23 Rev.1.1, 2007-09-01 Smart High-Side Power Switch BTS5235-2G

8 Package Out lines BTS5235-2G

Figure 19 PG-DSO-20-43 (Plastic Dual Small Outline Package) Green Product (RoHS compliant) To meet the world-wide customer requirements for environmentally friendly products and to be compliant with government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pb-free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020). 11 0 1120 Index Marking 1) Does not include plastic or metal protrusions of 0.15 max per side 2) Does not include dambar protrusion of 0.05 max per side GPS05094 2.65 max 0.1 0.2 -0.1 2.45 -0.2 +0.150.35 1.27 0.2 24x -0.27.6 1) 0.35 x 45˚ 0.23 8˚ max +0.09 +0.8 ±0.310.3 0.4 12.8-0.2 For further information on alternative packages, please visit our website: http://www.infineon.com/packages. Dimensions in mm

Smart High-Side Power Switch BTS5235-2G

Revision History

Data Sheet 24 Rev.1.1, 2007-09-01

9 Revision History

Rev. 1.1 2008-09-01 Modification of the Figure 9 Rev.1.0 2007-06-29 all pages: added new Infineon logo Creation of the green data sheet. First page: Adding the green logo and the AEC qualified Adding the bullet AEC qualified and the RoHS compliant features Package page Modification of the package to be green. Data sheet derived from the BTS5235L grey Revision 1.0: parameter 4.1.6: change to 110mJ at 12V; added conditions Vbb=13.5V changed Figure 9. parameter 4.1.7: -24V min. -17V max.

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