BTS5230GS INFINEON | Alldatasheet
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Data Sheet, V2.0, June 2005 Never stop thinking. BTS 5230GS Smart High-Side Power Switch PROFET Two Channels, 140 m Ω Automotive Power
Smart High-Side Power Switch BTS 5230GS Table of Contents Page Data Sheet 2 V2.0, 2005-06-13
Data Sheet 3 V2.0, 2005-06-13 Type Ordering Code Package BTS 5230GS Q67065-S6135 P-DSO-14-18 Smart High-Side Power Switch PROFET BTS 5230GS Product Summary The BTS 5230GS is a dual channel high-side power switch in P-DSO-14-18 package providing embedded protective functions. The power transistor is built by a N-channel vertical power MOSFET with charge pump. The device is monolithically integrated in Smart SIPMOS technology.Basic Features
- Very low standby current 3.3 V and 5 V compatible logic pins Improved electromagnetic compatibility (EMC) Stable behaviour at undervoltage Logic ground independent from load ground Secure load turn-off while logic ground disconnected Optimized inverse current capability Operating voltage Vbb(on) 4 . 5. .2 8V Over voltage protection Vbb(AZ) 41 V On-State resistance RDS(ON) 140 mΩ Nominal load current (one channel active) IL(nom) 1.8 A Current limitation IL(LIM) 8A Current limitation repetitive IL(SCr) 3A Standby current for whole device with load Ibb(OFF) 2.5 µA P-DSO-14-18
Smart High-Side Power Switch BTS 5230GS Data Sheet 4 V2.0, 2005-06-13 Protective Functions Reverse battery protection without external components (GND resistor integrated) Short circuit protection Overload protection Multi-step current limitation Thermal shutdown with restart Thermal restart at reduced current limitation Overvoltage protection without external resistor Loss of ground protection Electrostatic discharge protection (ESD) Diagnostic Functions Enable function for diagnosis pins (IS1 and IS2) Proportional load current sense signal by current source Open load detection in ON-state by load current sense Open load detection in OFF-state by voltage source Feedback on over temperature and current limitation in ON-state
Applications
µC compatible high-side power switch with diagnostic feedback for 12 V grounded loads All types of resistive, inductive and capacitve loads Suitable for loads with high inrush currents, so as lamps Suitable for loads with low currents, so as LEDs Replaces electromechanical relays, fuses and discrete circuits
Smart High-Side Power Switch BTS 5230GS Overview Data Sheet 5 V2.0, 2005-06-13 1O v e r v i e w The BTS 5230GS is a dual channel high-side power switch (two times 140 m Ω) in P-DSO-14-18 package providing embedded protective functions. The Enhanced IntelliSense pins IS1 and IS2 provide a sophisticated diagnostic feedback signal including current sense function and open load in off state. The diagnosis signals can be switched on and off by the sense enable pin SEN. An integrated ground resistor as well as integrated resistors at each input pin (IN1, IN2, SEN) reduce external components to a minimum. The power transistor is built by a N-channel vertical power MOSFET with charge pump. The inputs are ground referenced CMOS compatible. The device is monolithically integrated in Smart SIPMOS technology.
1.1 Block Diagram
control and protection circuit equivalent to channel 1 IN1 IS1 SEN GND RGND IS2 IN2 open load detection logic gate control charge pump VBB OUT1 clamp for inductive load multi step load current limitation load current sense temperature sensor
Smart High-Side Power Switch BTS 5230GS Overview Data Sheet 6 V2.0, 2005-06-13
1.2 Terms
Following figure shows all terms used in this data sheet. Figure 2 Terms Symbols without channel number are channel related and valid for each channel separately Terms2ch. emf IIN1 VIN1 OUT1 IIN2 VIN2 VIS1 IIS1 VIS2 IIS2 Vbb VSEN ISEN I L1 VOU T2 VOU T1 VDS2 VDS1 I L2 GND IGN D Ibb IN1 IN2 IS1 IS2 SEN VBB OUT2 BTS 5230GS
Smart High-Side Power Switch BTS 5230GS Pin Configuration Data Sheet 7 V2.0, 2005-06-13
2 Pin Configuration
2.1 Pin Assignment BTS 5230GS
Figure 3 Pin Configuration P-DSO-14-18
2.2 Pin Definitions and Functions
3 IN1 I Input signal for channel 1
6 IN2 I Input signal for channel 2
4 IS1 O Diagnosis output signal channel 1
5 IS2 O Diagnosis output signal channel 2
9 SEN I Sense Enable input for channel 1&2
12, 13 OUT1 O Protected high-side power output channel 1 10, 11 OUT2 O Protected high-side power output channel 2
2 GND - Ground connection
1, 7, 8, 14 VBB - Positive power supply for logic supply as well as output power supply (top view) OUT1 OUT1 VBB VBB GND IN1 IS1 IS2 VBB IN2 VBB SEN OUT2 OUT2
Smart High-Side Power Switch BTS 5230GS
Electrical Characteristics
Data Sheet 8 V2.0, 2005-06-13
3 Electrical Characteristics
3.1 Maximum Ratings
Stresses above the ones listed here may cause permanent damage to the device. Exposure to maximum rating conditions for extended periods may affect device reliability. Tj = 25 °C (unless otherwise specified) Pos. Parameter Symbol Limit Values Unit Test Conditionsmin. max. Supply Voltage
3.1.1 Supply voltage Vbb -16 28 V
3.1.2 Supply voltage for full short
circuit protection (single pulse) Vbb(SC) 02 0 V L = 8 µH R = 0.2 Ω 1)
3.1.3 Voltage at power transistor VDS -5 2 V
3.1.4 Supply Voltage for Load Dump
Vbb(LD) 40 V RI = 2 Ω 2) RL = 12 Ω Power Stages
3.1.5 Load current IL - IL(LIM) A 3)
3.1.6 Maximum energy dissipation
EAS -0 . 1 J 4) IL(0) = 2.1 A Tj(0) = 150°C 3.1.7 Power dissipation (DC) Ptot -0 . 9 W 5) Ta = 85 °C Tj ≤ 150 °C Logic Pins
3.1.8 Voltage at input pin VIN -5
-16 10 V t ≤ 2m i n 3.1.9 Current through input pin IIN -2.0 -8.0 2.0 mA t ≤ 2m i n
3.1.10 Voltage at sense enable pin VSEN -5
-16 10 V t ≤ 2m i n
3.1.11 Current through sense enable
ISEN -2.0 -8.0 2.0 mA t ≤ 2m i n
3.1.12 Current through sense pin IIS -25 10 mA
Smart High-Side Power Switch BTS 5230GS Data Sheet 9 V2.0, 2005-06-13 Temperatures
3.1.13 Junction Temperature Tj -40 150 °C
3.1.14 Dynamical temperature
∆Tj -6 0 ° C
3.1.15 Storage Temperature Tstg -55 150 °C
3.1.16 ESD susceptibility HBM
IN, SEN IS OUT VESD kV according to EIA/JESD 22-A 114B 1) R and L describe the complete circuit impedance including line, contact and generator impedances 2) RI is the internal resistance of the Load Dump pulse generator 3) Current limitation is a protection feature. Operation in current limitation is considered as “outside” normal operating range. Protection features are not designed for continuous repetitive operation. 4) Pulse shape represents inductive switch off: IL(t) = IL(0) * (1 - t / tpulse); 0 < t < tpulse 5) Device mounted on PCB (50 mm x 50 mm x 1.5mm epoxy, FR4) with 6 cm 2 copper heatsinking area (one layer, 70 µm thick) for Vbb connection. PCB is vertical without blown air. Tj = 25 °C (unless otherwise specified) Pos. Parameter Symbol Limit Values Unit Test Conditionsmin. max.
Smart High-Side Power Switch BTS 5230GS Block Description and Electrical Characteristics Data Sheet 10 V2.0, 2005-06-13
4 Block Description and Electrical Characteristics
4.1 Power Stages
The power stages are built by a N-channel vertical power MOSFET (DMOS) with charge pump.
4.1.1 Output On-State Resistance
The on-state resistance depends on the supply voltage as well as the junction temperature Tj. Figure 4 shows that dependencies for the typical on-state resistance RDS(ON). The on-state resistance in reverse polarity mode is described in Section 4.2.2. Figure 4 Typical On-State Resistance
4.1.2 Input Circuit
Figure 5 shows the input circuit of the BTS 5230GS. There is an integrated input resistor that makes external components obsolet. The current source to ground ensures that the device switches off in case of open input pin. The zener diode protects the input circuit against ESD pulses. Figure 5 Input Circuit (IN1 and IN2) 100 120 140 160 180 200 220 240 -50 -25 0 25 50 75 100 125 150 RDS(ON) /mΩ T /°C 100 120 140 160 180 200 220 240 0 5 10 15 20 25 RDS(ON) /mΩ Vbb /V Vbb = 13.5 V T j = 25°C IN RIN IIN GND RGN D Input.emf
Smart High-Side Power Switch BTS 5230GS Block Description and Electrical Characteristics Data Sheet 11 V2.0, 2005-06-13 A high signal at the input pin causes the power DMOS to switch on with a dedicated slope, which is optimized in terms of EMC emission. Figure 6 Switching a Load (resistive)
4.1.3 Inductive Output Clamp
When switching off inductive loads with high-side switches, the voltage V OUT drops below ground potenial, because the inductance intends to continue driving the current. Figure 7 Output Clamp (OUT1 and OUT2) To prevent destruction of the device, there is a voltage clamp mechanism implemented that keeps that negative output voltage at a certain level (V OUT(CL)). See Figure 7 and Figure 8 for details. Nevertheless, the maximum allowed load inductance is limited. IN VOU T t SwitchOn.emf tON tOFF t 90% 10% 70% 30% 70% 30% dV /dtON dV /dtON OutputClamp .em OUT GND Vbb VBB RL VOU T I L
Smart High-Side Power Switch BTS 5230GS Block Description and Electrical Characteristics Data Sheet 13 V2.0, 2005-06-13
4.1.4 Electrical Characteristics
Vbb = 9 V to 16 V, Tj = -40 °C to +150 °C (unless otherwise specified) typical values: Vbb = 13.5 V, Tj = 25 °C Pos. Parameter Symbol Limit Values Unit Test Conditions min. typ. max. General 4.1.1 Operating voltage Vbb 4.5 28 V VIN = 4.5 V, RL = 12 Ω, VDS < 0.5 V
4.1.2 Operating current
2.0 3.8 mA VIN = 5 V
4.1.3 Standby current for
Ibb(OFF) 1.5 2.5 2.5 µA VIN = 0 V, VSEN = 0 V, Tj = 25°C, Tj=85°C1) Tj = 150°C Output characteristics
4.1.4 On-State resistance
RDS(ON) 140 260 mΩ IL = 2.5 A Tj = 25 °C Tj = 150 °C
4.1.5 Output voltage drop
VDS(NL) 40 mV IL < 0.15 A
4.1.6 Nominal load current
IL(nom) 1.8 1.3 A Ta = 85 °C Tj ≤ 150 °C 2) 3)
4.1.7 Output clamp VOUT(CL) -16 -13 -10 V IL = 40 mA
4.1.8 Output leakage
IL(OFF) 0.1 4 µA VIN = 0 V
4.1.9 Inverse current
-IL(inv) 2A 1)
Smart High-Side Power Switch BTS 5230GS Block Description and Electrical Characteristics Data Sheet 14 V2.0, 2005-06-13 Note: Characteristics show the deviation of parameter at the given supply voltage and junction temperature. Typical values show the typical parameters expected from manufacturing. Thermal Resistance
4.1.10 Junction to case Rthjc 48 K/W 1)
4.1.11 Junction to ambient 2)
1) 2) Input characteristics 4.1.13 L-input level VIN(L) -0.3 1.0 V 4.1.14 H-input level VIN(H) 2.6 5.7 V 4.1.15 Input hysteresis ∆VIN 0.25 V 1) 4.1.16 L-input current IIN(L) 31 8 7 5 µ A VIN = 0.4 V
4.1.17 H-input current IIN(H) 10 38 75 µA VIN = 5 V
4.1.18 Turn-on time to
90% VOUT tON 80 250 µs RL = 12 Ω, Vbb = 13.5 V
4.1.19 Turn-off time to
10% VOUT tOFF 100 250 µs RL = 12 Ω, Vbb = 13.5 V 4.1.20 slew rate 30% to 70% VOUT dV/ dtON 0.1 0.3 0.5 V/µs RL = 12 Ω, Vbb = 13.5 V 4.1.21 slew rate 70% to 30% VOUT -dV/ dtOFF 0.1 0.26 0.5 V/µs RL = 12 Ω, Vbb = 13.5 V 1) Not subject to production test, specified by design 2) Device mounted on PCB (50 mm x 50 mm x 1.5mm epoxy, FR4) with 6 cm 2 copper heatsinking area (one layer, 70 µm thick) for Vbb connection. PCB is vertical without blown air 3) Not subject to production test, parameters are calculated from RDS(ON) and Rth Vbb = 9 V to 16 V, Tj = -40 °C to +150 °C (unless otherwise specified) typical values: Vbb = 13.5 V, Tj = 25 °C Pos. Parameter Symbol Limit Values Unit Test Conditions min. typ. max.
Smart High-Side Power Switch BTS 5230GS Data Sheet 15 V2.0, 2005-06-13
4.2 Protection Functions
The device is fully protected by embedded protection functions. Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are neither designed for continuous nor repetitive operation.
4.2.1 Over Load Protection
The load current IOUT is limited by the device itself in case of over load or short circuit to ground. There are three steps of current limitation which are selected automatically depending on the voltage VDS across the power DMOS. Please note that the voltage at the OUT pin is Vbb - VDS. Please refer to following figure for details. Figure 10 Current Limitation (minimum values) Current limitation is realized by increasing the resistance of the device which leads to rapid temperature rise inside. A temperature sensor for each channel causes an overheated channel to switch off to prevent destruction. After cooling down with thermal hysteresis, the channel switches on again. Please refer to Figure 11 for details. Figure 11 Shut Down by Over Temperature In short circuit condition, the load current is initially limited to IL(LIM). After thermal restart, the current limitation level is reduced to IL(SCr). The current limitation level is reset to IL(LIM) by switching off the device (VIN = 0 V). IL VDS5 1 01 52 0 CurrentLimitation.emf IN IL IIS t IL(LIM) IL(SC r) t t OverLoad .emf
Smart High-Side Power Switch BTS 5230GS Data Sheet 16 V2.0, 2005-06-13
4.2.2 Reverse Polarity Protection
In case of reverse polarity, the intrinsic body diode causes power dissipation. Additional power is dissipated by the integrated ground resistor. Use following fomular for estimation of total power dissipation Pdiss(rev) in reverse polarity mode. The reverse current through the intrinsic body diode has to be limited by the connected load. The current trough sense pins IS1 and IS2 has to be limited (please refer to maximum ratings on Page 8). The over-temperature protection is not active during reverse polarity.
4.2.3 Over Volt age Protection
In addition to the output clamp for inductive loads as described in Section 4.1.3, there is a clamp mechanism for over voltage protection. Because of the integrated ground resistor, over voltage protection does not require external components. As shown in Figure 12, in case of supply voltages greater than Vbb(AZ), the power transistor opens and the voltage across logic part is clamped. As a result, the internal ground potential rises to V bb - Vbb(AZ). Due to the ESD zener diodes, the potential at pin IN1, IN2 and SEN rises almost to that potential, depending on the impedance of the connected circuitry. Figure 12 Over Voltage Protection
4.2.4 Loss of Ground Protection
In case of complete loss of the device ground connections, but connected load ground, the BTS 5230GS securely changes to or keeps in off state. Pdiss(rev) VDS(rev) IL⋅()∑ Vbb RGND OUT VBB OverVoltage .emf VOU TRGN D logic GND IN IS SEN RSEN RIN ZDESD ZDAZ
Smart High-Side Power Switch BTS 5230GS Data Sheet 17 V2.0, 2005-06-13
4.2.5 Electrical Ch aracteristics
Vbb = 9 V to 16 V, Tj = -40 °C to +150 °C (unless otherwise specified) typical values: Vbb = 13.5 V, Tj = 25 °C Pos. Parameter Symbol Limit Values Unit Test Conditions min. typ. max. Over Load Protection
4.2.1 Load current limitation IL(LIM) 81 6 A VDS = 7 V
51 0 A VDS = 14 V
4.2.2 Repetitive short circuit
IL(SCr) 3A 1) Tj = Tj(SC) 1) Not subject to production test, specified by design
4.2.3 Initial short circuit shut
tOFF(SC) 0.5 ms TjStart = 25 °C 1)
4.2.4 Thermal shut down
Tj(SC) 150 170
4.2.5 Thermal hysteresis ∆Tj 10 K 1)
4.2.6 Drain-Source diode
voltage (VOUT >V bb) -VDS(rev) 700 mV IL = -1.6 A, Vbb = -13.5 V, Tj = 150°C
4.2.7 Reverse current
-IGND 65 mA Vbb = -13.5 V 1) Ground Circuit
4.2.8 Integrated Resistor in
RGND 115 220 350 Ω Tj < 150°C 200 350 Ω Tj = 150°C Over Voltage
4.2.9 Overvoltage
Vbb(AZ) 41 47 53 V Ibb = 2 mA Loss of GND
4.2.10 Output current while
IL(GND) 2m A IIN = 0,1) 2) ISEN = 0, IIS = 0, IGND = 0 2) no connection at these pins
Smart High-Side Power Switch BTS 5230GS Data Sheet 18 V2.0, 2005-06-13
4.3 Diagnosis
For diagnosis purpose, the BTS 5230GS provides an Enhanced IntelliSense signal at pins IS1 and IS2. This means in detail, the current sense signal IIS, a proportional signal to the load current (ratio kILIS = IL / IIS), is provided as long as no failure mode (see Table 1) occures. In case of open load in off-state, VIS(fault) is fed to the diagnosis pin. Figure 13 Block Diagram: Diagnosis Table 1 Truth Table Operation Mode Input Level Output Level Diagnostic Output SEN = H SEN = L Normal Operation (OFF) L (OFF-State) GND Z Z Short Circuit to GND GND Z Z Over-Temperature Z Z Z Short Circuit to Vbb Vbb VIS = VIS(fault) Z Open Load < VOUT(OL) > VOUT(OL) Z VIS = VIS(fault) Z Z channel 1 channel 2 gate control IIS2 OUT2 IIS1 OUT1 SEN IS1 µC IN1 VOU T(OL) 1 0 VIS(fa ult) RIN1 RSEN gate control IN2 IS2 0 RIN2 diagnosis GND ROL SOL load VBB Sense.emf RIS1 RIS2 Rlim Rlim IL(PD )
Smart High-Side Power Switch BTS 5230GS Data Sheet 19 V2.0, 2005-06-13
4.3.1 ON-State Diagnosis
The standard diagnosis signal is a current sense signal proportional to the load current. The accuracy of the ratio ( kILIS = IL / IIS) depends on the temperature. Please refer to Figure 14 for details. Usually a resistor RIS is connected to the current sense pin. It is recommended to use sense resistors RIS > 500 Ω. A typical value is 4.7 kΩ Figure 14 Current sense ratio kILIS Normal Operation (ON) H (ON-State) ~Vbb IIS = IL / kILIS Z Current Limitation < Vbb ZZ Short Circuit to GND ~GND Z Z Over-Temperature Z Z Z Short Circuit to V bb Vbb IIS < IL / kILIS Z Open Load Vbb ZZ L = Low Level, H = High Level, Z = high impedance, potential depends on leakage currents and external circuit 1) The curves show the behavior based on characterization data. The marked points are guaranteed in this Data Table 1 Truth Table Operation Mode Input Level Output Level Diagnostic Output SEN = H SEN = L 500 1000 1500 2000 2500 3000 0 0.5 1 1.5 2 2.5 kILIS IL /A dummy Tj = 150°C dummy Tj = -40°C
Smart High-Side Power Switch BTS 5230GS Data Sheet 20 V2.0, 2005-06-13 In case of over-current as well as over-temperature, the current sense signal is switched off. As a result, one threshold is enough to distinguish between normal and faulty operation. Open load and over-load can be differentiated by switching off the channel and using open-load detection in off-state. Details about timings between the diagnosis signal IIS and the output voltgage VOUT and the load current IL in ON-state can be found in Figure 15. Figure 15 Timing of Diagnosis Signal in ON-state
4.3.2 OFF-State Diagnosis
Details about timings between the diagnosis signal IIS and the output voltgage VOUT and the load current IL in OFF-state can be found in Figure 16. Figure 16 Timing of Diagnosis Signal in OFF-state For open load diagnosis in off state an external output pull-up resistor ( ROL) is recommended. For calculation of the pull-up resistor, just the external leakage current Ileakage and the open load threshold voltage VOUT(OL) has to be taken into account. SwitchOn.emf IN VOU T IIS t t t IL t ON tON tsIS( ON) tsIS( L C) OFF SwitchOff.emf IN VOU T IIS t t t Open Load, pull-up resistor active VIS( fault) / RS ON OFF td(fault) ts( fau lt) pul l -up resi stor inactive
Smart High-Side Power Switch BTS 5230GS Data Sheet 21 V2.0, 2005-06-13 Ileakage defines the leakage current in the complete system e.g. caused by humidity. There is no internal leakage current from out to ground at BTS 5230GS. Vbb(min) is the minimum supply voltage at which the open load diagnosis in off state must be ensured. To reduce the stand-by current of th e system, an open load resistor switch ( SOL) is recommended.
4.3.3 Sense Enable Function
The diagnosis signals have to be switched on by a high signal at sense enable pin (SEN). See Figure 17 for details on the timing between SEN pin and diagnosis signal IIS. Please note that the diagnosis is enabled, when no signal is provided at pin SEN. Figure 17 Timing of Sense Enable Signal The SEN pin circuit is designed equal to the input pin. Please refer to Figure 5 for details. The resistors Rlim are recommended to limit the current through the sense pins IS1 and IS2 in case of reverse polarity and over-voltage. Please refer to maximum ratings on Page 8. The stand-by current of the BTS 5230GS is minimized, when both input pins (IN1 and IN2) and the sense enable pin (SEN) are on low level. ROL Vbb(min) VOUT(OL,max)– Ileakage tdIS( SEN)tsIS(SEN) t SEN.emf tsIS( SEN) t tdIS( SEN)IIS SEN
Smart High-Side Power Switch BTS 5230GS Data Sheet 22 V2.0, 2005-06-13
4.3.4 Electrical Characteristics
Vbb = 9 V to 16 V, Tj = -40 °C to +150 °C, VSEN = 5 V (unless otherwise specified) typical values: Vbb = 13.5 V, Tj = 25 °C Pos. Parameter Symbol Limit Values Unit Test Conditions min. typ. max. Open Load at OFF state
4.3.1 Open load detection
VOUT(OL) 2.0 3.2 4.4 V
4.3.2 Sense signal in case
VIS(fault) 3.5 5.0 6.5 V VIN = 0 V VOUT = 12 V IIS = 1 mA
4.3.3 Sense signal current
IIS(LIM) 4m A VIS = 0 V VIN = 0 V VOUT = 12 V
4.3.4 Sense signal invalid
td(fault) 1.2 ms VIN = 5V t o 0V VOUT = 12 V
4.3.5 Fault signal settling
ts(fault) 200 µs VIN = 0 V VOUT = 0 V to >V OUT(OL) IIS = 1 mA Load Current Sense
4.3.6 Current sense ratio kILIS VIN = 5 V
IL = 0.04 A IL = 0.34 A IL = 0.6 A IL = 1.0 A IL = 2.6 A 500 1210 1210 1210 1220 1800 1490 1416 1410 1405 3100 1830 1645 1600 1590 Tj = -40 °C IL = 0.04 A IL = 0.34 A IL = 0.6 A IL = 1.0 A IL = 2.6 A 900 1210 1210 1210 1220 1650 1490 1416 1410 1405 2400 1830 1645 1600 1590 Tj = 150 °C
4.3.7 Current sense voltage
VIS(LIM) 5.0 5.9 7.5 V IIS = 0.5 mA IL = 2.6 A
4.3.8 Current sense
IIS(LH) 5µ A VIN = 5 V IL = 0 A
Smart High-Side Power Switch BTS 5230GS Data Sheet 23 V2.0, 2005-06-13
4.3.9 Current sense
leakage, while diagnosis disabled IIS(dis) 2µ A VSEN = 0 V IL = 2.6 A
4.3.10 Current sense settling
time to IIS static ±10% after positive input slope tsIS(ON) 300 µs VIN = 0V t o 5V IL = 1.6 A
4.3.11 Current sense settling
time to IIS static ±10% after change of load current tsIS(LC) 50 µs VIN = 5 V IL = 0.6 A to 1 Sense Enable 4.3.13 L-input level VSEN(L) -0.3 1.0 V 4.3.14 H-input level VSEN(H) 2.6 5.7 V 4.3.15 L-input current ISEN(L) 31 8 7 5 µ A VSEN = 0.4 V
4.3.16 H-input current ISEN(H) 10 38 75 µA VSEN = 5 V
4.3.17 Current sense settling
tsIS(SEN) 32 5 µ s VSEN = 0V t o 5V VIN = 0 V VOUT > VOUT(OL)
4.3.18 Current sense
tdIS(SEN) 25 µs VSEN = 5V t o 0V IL = 2 A RS = 5 kΩ 1) 1) Not subject to production test, specified by design Vbb = 9 V to 16 V, Tj = -40 °C to +150 °C, VSEN = 5 V (unless otherwise specified) typical values: Vbb = 13.5 V, Tj = 25 °C Pos. Parameter Symbol Limit Values Unit Test Conditions min. typ. max.
Smart High-Side Power Switch BTS 5230GS Package Outlines BTS 5230GS Data Sheet 24 V2.0, 2005-06-13
5 Package Outlines BTS 5230GS
(Plastic Dual Small Outline Package) Y ou can find all of our packages, sorts of packing and others in our Infineon Internet Page “Products”: http://www.infineon.com/products. Dimensions in mmSMD = Surface Mounted Device
Smart High-Side Power Switch BTS 5230GS
Revision History
6 Revision History
V2.0 05-06-08 initial version
Smart High-Side Power Switch BTS 5230GS Data Sheet 26 V2.0, 2005-06-13
Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München, Germany © Infineon Technologies AG 6/13/05. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide. Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Smart High-Side Power Switch BTS 5230GS Data Sheet 27 2005-06-13
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