BTS50070-1EGA INFINEON | Alldatasheet

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Technical content

Smart High-Side Power Switch PROFET™ Datasheet, V1.0, April 2009 Automotive

Datasheet 2 V1.0, 2009-04-06 Smart High-Side Power Switch BTS50070-1EGA

BTS50070-1EGA PG-DSO-12-16 BTS 50070A Datasheet 3 V1.0, 2009-04-06 Smart High-Side Power Switch PROFET™ BTS50070-1EGA 1O v e r v i e w

Features

  • Part of scalable product family
  • 3.3 and 5V compatible, ground referenced CMOS compatible inputs
  • Optimized electromagnetic compatibility (EMC)
  • Very low standby current
  • Stable behavior at under-voltage
  • Secure load turn-off while device ground disconnected
  • ReverSave TM - Reverse battery protection without external components
  • Inverse load current capability
  • I n f i n e o n INTELLIGENT LATCH
  • Green Product (RoHS compliant)
  • AEC qualified Operating voltage range Vbb(ext) 6 .. 28V Minimum power stage over-voltage protection VDS(CL) 42 V Typical on-state resistance at Tj = 25°C RDS(ON) 7 mΩ Maximum on-state resistance at Tj = 150°C RDS(ON) 14 mΩ Typical nominal load current IL(nom) 14 A Minimum short circuit shutdown Threshold (SCT) IL(SC)high 90 A Maximum stand-by current for whole device with load for Tj ≤ 85°C Ibb(OFF) 10 µA

Description

The BTS50070-1EGA is a single channel high-side power switch in PG-DSO-12-16 package providing embedded protective functions including ReverSaveTM and Infineon INTELLIGENT LATCH. The power transistor is built by a N-channel vertical power MOSFET with charge pump. The design is based on Smart power chip on chip technology. The BTS50070-1EGA has ground referenced CMOS compatible inputs. ReverSaveTM is a protection feature that causes the power transi stor to switch on in case of reverse polarity. As a result, the power dissipation is reduced. Infineon  INTELLIGENT LATCH ensures a latched switch-off and reporting in case of fault condition. The Infineon ENHANCED SENSE pin IS provides a sophisticate d diagnostic feedback signal including current sense functionality, ope n load in ON-state (via sense signal) and o pen load and short to battery in OFF-state. Diagnostic reporting can be enabled and disabled by the DEN-Pin in ON-state and OFF-state. In OFF-state, open load detection can also be disabled by the DEN-Pin to optimize stand-by current.

Datasheet 4 V1.0, 2009-04-06 Smart High-Side Power Switch BTS50070-1EGA Overview Protective Functions

  • Short circuit protection with latch
  • Thermal shutdown with latch
  • I n f i n e o n INTELLIGENT LATCH - reset able latch resulting from protective switch-off
  • ReverSave TM - Reverse battery protection by self turn on of power MOSFET
  • Inverse load current capabilit y - Inverse operation function
  • Under voltage shutdown with restart
  • Over voltage protection (including load dump)
  • Loss of ground protection
  • Loss of Vbb protection (with external diode for charged inductive loads)
  • Electrostatic discha rge protection (ESD) Diagnostic Functions
  • Enable function for diagnosis and reporting
  • Provides capability for muliplexing of the reporting signal from multiple devices by DEN pin. In ON-state:
  • Provides analog sense signal of load current in normal operation mode
  • Provides defined fault current signal in case of ov erload, over temperature and short circuit to ground
  • Open load detection in ON-state by load current sense In OFF-State:
  • Open load and short to battery detection

Applications

  • µC compatible high-side power switch with diagnostic feedback for 12 V system grounded loads
  • All types of resistive, in ductive and capacitive loads
  • Most suitable for loads with high inrush curren ts, such as glow plugs, PTC heaters, or lamps
  • Replaces electromechanical relays, fuses and discrete circuits

Datasheet 5 V1.0, 2009-04-06 Smart High-Side Power Switch BTS50070-1EGA Block Diagram and Terms

2 Block Diagram and Terms

2.1 Block Diagram

Overview.emf control chip base chip Vbb OUT IN T driver logic gate control charge pump load current sense over temperature clamp for inductive load over current switch-off open load detection @OFF voltage sensor GND ESD protection IS DEN internal power supply Figure 1 Block Diagram

2.2 Terms

Terms .emf VIN OUT Vbb VOUT Ibb IN VBB VDS or VON or VOFF RIS IIN IGND GND IS IIS IL VbIS VIS DEN VDEN IDEN Figure 2 Terms

Datasheet 6 V1.0, 2009-04-06 Smart High-Side Power Switch BTS50070-1EGA Pin Configuration

3 Pin Configuration

3.1 Pin Assignment BTS50070-1EGA

PDSO 12. emf (top view ) OUT OUT OUT OUT NC NC IN IS GND NC heatslug (V bb) NC DEN Figure 3 Pin Configuration

3.2 Pin Definitions and Functions

1 GND - Ground connection for control chip

2 IN I Input: activates power switch. Has an internal pull down resistor.

3 IS O Sense Output: With diagnosis enabled, provides a sense current proportional to the

load current during normal operation. During open load in ON provides no current. Provides a defined fault current in case of overload, over temperature or short circuit during ON or open load or short to battery during OFF (see Table 1 “Truth Table” on Page 24)

4 DEN I Diagnosis ENable: with high level enables diagnosis reporting and open load / short to

battery detection in OFF. Resets a protective, latched switch-off by falling edge acknowledgement. Has an internal pull down resistor. 5, 6, 7, NC - Not connected 8, 9, 10, OUT O Output: output to the load; pins 8 to 11 must be externally shorted together 1) Not shorting all output pins will considerably increase th e on-state resistance, reduce the peak current capability, the clamping capability and decrease the current sense accuracy. exposed PAD Vbb - Supply Voltage: positive power supply for logic and output

Datasheet 7 V1.0, 2009-04-06 Smart High-Side Power Switch BTS50070-1EGA General Product Characteristics

4 General Product Characteristics

4.1 Absolute Maximum Ratings

Operation outside the parameters listed here may cause permanent damage to the device. Exposure to maximum rating conditions for extended periods may affect device reliability Absolute Maximum Ratings 1) Tj = -40 °C to +150 °C (unless otherwise specified) 1) Not subject to production test, specified by design. Pos. Parameter Symbol Limit Values Unit Conditions Min. Max. Supply Voltage

4.1.1 Supply voltage V bb 04 2 V

4.1.2 Reverse polarity voltage -Vbb(rev) 01 6 V Tj = 25 °C 2)

2) t ≤ 2 min

4.1.3 Supply voltage for sh ort circuit protection

(single pulse) Vbat(SC) 02 8 V 3)

4.1.4 Supply Voltage for Load Dump

Vbb(LD) -4 2 V RI = 2 Ω 4), RL = 1Ω td =400 ms Tj = 25 °C Input Pins 4.1.5 Voltage at IN pin VIN -0.3 6 V -

4.1.6 Current through IN pin IIN -2 2 mA 2)

4.1.7 Voltage at DEN pin VDEN -0.3 6 V -

4.1.8 Current through DEN pin IDEN -2 2 mA 2)

4.1.9 Voltage at sense pin VIS -0.3 VZIS V-

4.1.10 Current through sense pin IS IIS -102)5) 10 mA -

4.1.11 Load current 6) |IL| - IL(SC) A-

4.1.12 Inductive load switch-off energy (single

pulse) EAS -1 4 5 m J Vbb=13.5V7), IL(0) = 50A, Tj(0) ≤ 150 °C

4.1.13 Inductive load switch-off energy

(repetitive pulses) EAR -7 1 m J Vbb=13.5V7)8), IL(0) = 20A, Tj(0) ≤105 °C Temperatures

4.1.14 Junction temperature Tj -40 150 °C -

4.1.15 Dynamic temperature increase while

∆Tj -6 0 K -

4.1.16 Storage temperature Tstg -55 150 °C -

4.1.17 ESD susceptibility HBM

IN, DEN, IS, Vbb, OUT Vbb versus OUT VESD kV according to EIA/JESD 22-A 114B

Datasheet 8 V1.0, 2009-04-06 Smart High-Side Power Switch BTS50070-1EGA General Product Characteristics Note: Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Note: Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are not designed for continuous repetitive operation.

4.2 Functional Range

Pos. Parameter Symbol Limit Values Unit Conditions Min. Max. Supply Voltage Supply voltage range for normal operation Vbb(nor) 9 16 V - Extended supply voltage range for operation Vbb(ext) 6 1) Not subject to production test, specified by design 281) V 2) In extended supply voltage range, the device is functi onal but electrical parameters are not specified. Operating current VIN = 0V, VDS > VDS(OL) VIN = 5V IGND mA VDEN = 5V, VIS < 5.5V, Vbb = Vbb(nor) Load current range for sense functionality 1) IL(IS) 1.5 59 A IIS - IIS(LH) > 30 µA, IIS(lim) > IIS, Vbb = Vbb(nor), VIN = VDEN = 5 V, VbIS > 5 V Junction temperature Tj -40 150 °C - Note: Within the functional or operating range, the IC operates as described in the circuit description. The electrical characteristics are specified within the conditions given in the Electrical Characteristics table. 3) Short circuit is defined as a combination of remaining resistances and inductances. See Figure 15. 4) Vbb(LD) is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839. RI is the internal resistance of the Load Dump pulse generator 5) Valid at disabled diagnosis. 6) Over current threshold switch -off is a protection feature. Protection features are not designed for continuous repetitive operation. 7) See also Chapter 5.5 . 8) Resuls from simulation of temperature swing. No t subject to production test, specified by design. 4.2.1 4.2.2 4.2.3 4.2.4 4.2.5

Datasheet 9 V1.0, 2009-04-06 Smart High-Side Power Switch BTS50070-1EGA General Product Characteristics

4.3 Thermal Resistance

Pos. Parameter Symbol Limit Values Unit Conditions Min. Typ. Max. Junction to case 1) Not subject to production test, specified by design 1) Rthjc - - 1.5 K/W 2) Specified Rthjc value is simulated at natural convection on a cold plate setup. Ta = 25 °C. Control chip to case 1) Rthj(cc)c - 40 - K/W 3) Specified Rthj(cc)c value is simulated at natural convection on a cold plate setup. Ta = 25 °C, IL = 0A. Junction to ambient 1) device on PCB 4) Specified Rthja value and Figure 4 are according Jedec JESD51_7 at natural convection on FR4 2s2p board. The BTS50070-1EGA was measured on a 76.2 x 114.3 x 1.6 mm board with 2 inner copper layers (2 x 70µm Cu, 2 x 35µm Cu) applying power losses of 1.4W at the channel. According to JESD51-5 a thermal via array under the exposed pad contacted the first inner copper layer. Ta = 25 °C. Rthja - 27 - K/W – /g19/g15/g20 /g20 /g20/g19 /g20/g19/g19 /g19 /g19/g15/g19/g20 /g19/g15/g20 /g20 /g20/g19 /g20/g19/g19 /g20/g19/g19/g19 /g87/g51 /g86/g72/g70 /g61/g87/g75/g11/g45/g36/g12 /g46/g18/g58 Figure 4 shows the typical transient thermal impedance of BTS50070-1EGA. Figure 4 Transient Thermal Impedance Z th(JA)=f(tp) 4) 4.4 Pos. Parameter Value Test Conditions Jedec humidity category acc. J-STD-020-D MSL3 - Jedec classification temperature acc. J-STD-020-D 260°C - Package 4.3.1 4.3.1 4.3.1 4.4.1 4.4.2

Datasheet 10 V1.0, 2009-04-06 Smart High-Side Power Switch BTS50070-1EGA Power Stages

5 Power Stages

The power stage is built by a N-channel vertical power MOSFET (DMOS) with charge pump.

5.1 Input Circuit

Input .emf IN GND RIN Figure 5 shows the input circuit of the BTS50070-1EGA. The input resistor to ground ensures that the input signal is low in case of open input pin. The zener diode protects the input circuit against ESD pulses. Figure 5 Input Circuit A high signal at the input pin causes the DMOS to switch on.

5.2 Output On-State Resistance

/g19 /g21/g15/g24 /g24 /g26/g15/g24 /g20/g19 /g19 /g23 /g27 /g20/g21 /g20/g25 /g21/g19 /g21/g23 /g21/g27 /g53/g39/g54/g11/g50/g49/g12 /g80Ω /g57/g69/g69 /g87/g92/g83/g17 /g57 /g57/g69/g69/g11/g88/g12 2,5 7,5 12,5 -40 0 40 80 120 160 RDS(ON) mΩ Tj typ. Tj = 25°CVbb = 13.5 V The on-state resistance RDS(ON) depends on the supply voltage Vbb and the junction temperature Tj. Figure 6 shows these dependencies for the typical on-state resistance. The on-state resistance in reverse polarity mode is described in Chapter 6.5. Figure 6 Typical On-State Resistance

5.3 Output Timing

The power stage is designed for high side configuration (Figure 9).

Swit chOn .emf VOUT t t VIN 10% 30% 50% 90% tON tOFF (dV/ dt)ON (dV/ dt)OFF tr tf VIN (H ),min VIN(L ),ma x t Ibb Ibb(OFF) tstandby Datasheet 11 V1.0, 2009-04-06 Smart High-Side Power Switch BTS50070-1EGA Power Stages The power stage has a defined switching behavior. Defined slew rates as well as edge shaping support PWM’ing of the load while achieving lowest EMC emission at minimum switching losses. Figure 7 Switching a Load (resistive)

5.4 Switching losses fo r resistive loads

Switching the device on and off may cause switching losses EON and EOFF. In case of a resistive load, the switching losses depend on the supply voltage Vbb as well as on the load current IL and the junction temperature Tj. Figure 8 shows this dependencies of the switching losses.

silicon available. 0 5 10 15 20 25 30 Vbb EON, EOFF mJ V EOFF EON typ., Tj = 25°C, RL = 1Ω 0,1 100 0,1 1 10 RL EON, EOFF mJ Ω EOFF EON typ., T j = 25°C, Vbb = 13.5V -50 0 50 100 150 Tj EON, EOFF mJ EOFF EON typ., Vbb=13.5V, RL = 1Ω Datasheet 12 V1.0, 2009-04-06 Smart High-Side Power Switch BTS50070-1EGA Power Stages Figure 8 Typical switching losses EON and EOFF

5.5 Output Inductive Clamp

When switching off inductive loads, the output voltage VOUT drops below ground potential due to the inductive properties of the load ( -diL/dt = -vL/L ; -VOUT ≅ -VL ).

OutputClamp.emf control chip base chip VDS(CL) LOAD GND OUT VBB Vbb charge pump VOUT iL Datasheet 13 V1.0, 2009-04-06 Smart High-Side Power Switch BTS50070-1EGA Power Stages Figure 9 Output Clamp VOU T InductiveLoad.emf t IL t VOU T(C L) Vbb ON OFF VDS( CL ) Vbb Vbb VOU T VOU T(C L) VDS( CL ) To prevent destruction of the device, there is a voltage clamp mechanism implemented that keeps the voltage drop across the device at a certain level. At nominal battery voltage the output is clamped to VOUT(CL). At over voltages the output is clamped to VDS(CL). See Figure 9 and Figure 10 for details. The maximum allowed load inductance is limited. Figure 10 Switching an Inductance Maximum Load Inductance EV bb VOUT CL()+() VOUT CL()– RL VOUT(CL)  IL+ L RL E 1 2---LIL

2 VDS(CL)

While de-energizing inductive loads, energy has to be dissipated in the BTS50070-1EGA. This energy can be calculated by the following equation: In the event of de-energizing very low ohmic inductances (RL≈0) the following, simplified equation can be used: The energy, which is converted into heat, is limited by the thermal design of the component. See Figure 11 for the maximum allowed energy dissipation.

/g19 /g21/g19 /g23/g19 /g25/g19 /g27/g19 /g20/g19/g19 /g20/g21/g19 /g20/g23/g19 /g20/g25/g19 /g19 /g20 /g24/g22 /g19/g23 /g24/g25 /g19/g26 /g24/g28 /g19 /g44 /g47/g11/g19/g12 /g40/g36/g53 /g80/g45 /g36 /g19 /g24/g19 /g20/g19/g19 /g20/g24/g19 /g21/g19/g19 /g21/g24/g19 /g22/g19/g19 /g19 /g20 /g24/g22 /g19/g23 /g24/g25 /g19/g26 /g24/g28 /g19 /g44 /g47/g11/g19/g12 /g40/g36/g54 /g80/g45 /g36 Tj(0) = 150°C, Vbb = 13.5V Tj(0) = 105°C, Vbb = 13.5V Datasheet 14 V1.0, 2009-04-06 Smart High-Side Power Switch BTS50070-1EGA Power Stages Figure 11 Maximum energy dissipation 1) 2) Note: Clamping overrides all protection functionalities. In order to avoid device destruction resulting from inductive switch-off or over voltage the device has to be operated within the maximum ratings.

5.6 Inverse Operation Capability

Inverse_capability.emf -IL +Vbb control chip base chip VON(inv) GND OUT VBB Vbb lo gic The BTS50070-1EGA can be operated in inverse load current condition (+VOUT > +Vbb). The device can not block the current flow during inverse mode. In ON condition a voltage drop across the activated channel of -VON(inv)=RON(inv)*(-IL) can be observed. In OFF condition a voltage drop across the intrinsic body diode of -VOFF(inv)=f(-IL) can be observed. As long as the inverse current does not exceed |- IL| ≤ |-IL(inv)| the logic will operate and report according Table 1 and the BTS50070-1EGA will be able to remain in ON mode. Figure 12 Inverse current capability 1) Not subject to production test, specified by design. 2) Resuls for EAR from simulation of temperature swing.

Datasheet 15 V1.0, 2009-04-06 Smart High-Side Power Switch BTS50070-1EGA Power Stages Note: Activation of any protection mechanism will not block the current flow. Over temperature detection and current sense is not functional during inverse mode.

5.7 Undervoltage shutdown + restart

Undervoltage .emf Vbb t VOUT tdelay(UV)ON Vbb(u) Z t Vbb(ext) The BTS50070-1EGA is supplied by Vbb. The internal logic permanently monitors the supply voltage Vbb. In the event that the supply voltage drops below the under voltage shutdown threshold Vbb(u), the BTS50070-1EGA will switch off. If the supply voltage reaches nominal operating voltage range Vbb(ext), the BTS50070-1EGA will switch on after a delay tdelay(UV), assuming VIN=High. Protective latch is reset by undervoltage shutdown. Figure 13 Undervoltage shutdown and restart

Datasheet 16 V1.0, 2009-04-06 Smart High-Side Power Switch BTS50070-1EGA Power Stages

5.8 Electrical Characteristics: Power Stages

Note: Characteristics show the deviation of parameters at the given supply voltage and junction temperature. Typical values show the typical parameters expected from manufacturing. Vbb = 9 V to 16 V, Tj = -40 °C to +150 °C (unless otherwise specified) typical values: Vbb = 13.5 V, Tj = 25 °C Pos. Parameter Symbol Limit Values Unit Conditions Min. Typ. Max. General

5.8.1 Stand-by current

Tj = -40 °C, Tj = 25 °C Tj ≤ 85 °C 1) Tj = 150 °C Ibb(OFF) 100 µA 2), VOUT=VIS=0V, t > tstandby, no fault condition 5.8.2 Stand-by time 1) 2) tstandby - 0.5 1 ms |VIN|=|VDEN|≤0.3V, VOUT=VIS=0V 5.8.3 Undervoltage shutdown1) Vbb(u) - 5.7 6 V -

5.8.4 Undervoltage recovery time1) tdelay(UV) - 10 - ms -

5.8.5 L-input level VIN(L) -0.3 - 1.0 V - 5.8.6 H-input level VIN(H) 2.0 - 5.5 V - 5.8.7 input hysteresis VIN(hys) - 100 - mV 1) 5.8.8 input pull down resistor RIN 50 100 200 kΩ - Output characteristics

5.8.9 On-state resistance

Tj=25°C Tj=150°C Vbb=6V, Tj=25°C Vbb=6V, Tj=150°C RDS(ON) 9.5 11.5 23.5 mΩ VIN=5V, IL=20A

5.8.10 Nominal load current 1)4) IL(nom) - 14 - A TA = 85 °C

Tj ≤ 150 °C

5.8.11 Output leakage current IL(OFF) - 3 100 µA VIN=VDEN=0V,

VOUT=0V

5.8.12 Output clamp during switch-off -VOUT(CL) 16 18 20 V VOUT≥Vbb−VDS(CL)

5), IL = 40 mA 16 20 25 V VOUT≥Vbb−VDS(CL) 5), IL = 20 A 1)

5.8.13 Output clamp during over voltage VDS(CL) 42 50 - V VDS≤Vbb -VOUT(CL)

5), IL = 40 mA 42 51 - V VDS≤Vbb -VOUT(CL) 5), IL = 20 A 1) 5.8.14 Switch-On energy 5N95% VOUT EON - 3 5 mJ Vbb = 13.5 V, RL = 1 Ω5.8.15 Switch-Off energy 95P5% VOUT EOFF - 3.5 5 mJ

5.8.16 Inverse operation

Tj=25°C Tj=150°C RON(inv) mΩ VIN = 5 V, IL = -20 A, no protective switch-off

Datasheet 17 V1.0, 2009-04-06 Smart High-Side Power Switch BTS50070-1EGA Power Stages

5.8.17 Inverse operation output voltage

Tj=25°C Tj=150°C -VOFF(inv) 700 400 900 800 mV VIN=0V, IL = -10 A

5.8.18 Inverse current capability1) -IL(inv) 20 - - A -

5.8.19 Turn-on time to

90%VOUT tON - 250 500 µs Vbb = 13.5 V RL = 1Ω

5.8.20 Turn-off time to

10%VOUT tOFF - 250 500 µs Vbb = 13.5 V RL = 1 Ω

5.8.21 Slew rate On 30N50% VOUT (dV/

dt)ON 0.07 0.12 0.21 V/µs Vbb = 13.5 V RL = 1 Ω

5.8.22 Slew rate Off 50P30% VOUT

Tj = -40 °C, Tj = 25 °C Tj ≤ 85 °C1) Tj = 150 °C -(dV/ dt)OFF 0.07 0.07 0.07 0.12 0.12 0.12 0.23 0.215 0.21 V/µs Vbb = 13.5 V RL = 1 Ω 1) Not subject to production test, specified by design 2) In case of protective switch-off STANDBY is only reached if the fault was acknowledged while IN=LOW by DEN=HIGHPLOW and tstandby expired. See also Chapter 6.4 for details. 3) Tested at VIN=VDEN=0V only 4) according JESD51_7, FR4 2s2p board, 76.2 x 114.3 x 1.6 mm, 2x70µm Cu, 2x35µm Cu. 5) See Figure 10. Vbb = 9 V to 16 V, Tj = -40 °C to +150 °C (unless otherwise specified) typical values: Vbb = 13.5 V, Tj = 25 °C Pos. Parameter Symbol Limit Values Unit Conditions Min. Typ. Max.

Datasheet 18 V1.0, 2009-04-06 Smart High-Side Power Switch BTS50070-1EGA Protection Functions

6 Protection Functions

The BTS50070-1EGA provides embedded protective functions. In tegrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as “outside” normal operating range. Protection functi ons are neither designed for continuous nor repetitive operation.

6.1 Short Circuit Protection

I_L(SC)_detect.emf t IL VIN t IL(SC) VDEN t latch reset latch reset latch reset reset latch latch The internal logic permanently monitors the load current IL. In the event the load current exceeds the short circuit shutdown threshold (IL>IL(SC)), the device will switch off immediately. Any protective switch off latches the output. Please refer to Figure 14 for details. The protective switch off remains latched until the fault is acknowledged and reset by a falling edge at the DEN pin. See also Chapter 6.4. Figure 14 Shutdown by short circuit current detection Before switching on, the device is measuring the battery voltage Vbb(0). In case Vbb(0) is above Vbb(SCT), the short circuit current threshold IL(SC)high is reduced to a lower level IL(SC)low. Note: In case of a short circuit between OUT and ground, a impedance between Vbat and Vbb pin of the device (see Figure 15) may cause the device’s supply voltage to drop below Vbb(u) before short circuit shutdown threshold is reached. In that case, the device will detect an undervoltage condition and behave as described in Chapter 5.7.

6.2 Short Circuit Impedance

The capability to handle single short circuit events depends on the battery voltage as well as on the primary and secondary short impedance. Figure 15 outlines allowable combinations for a single short circuit event of maximum, secondary inductance for given secondary resistance.

short_circuit.emf Vbb GND IN PROFET OUT Vbat 10mΩ 5uH RSC LSC LO AD SHORT CIRCUIT L-R.emf 10 20 30 500 RSC LSC µH mΩ Applicable impedances for: Vbat ≤ Vbat(SC) IL(SC) = IL(SC)High for Vbb < Vbb(SCT) ; IL(SC) = IL(SC)Low for Vbb ≥ Vbb(SCT) ; Datasheet 19 V1.0, 2009-04-06 Smart High-Side Power Switch BTS50070-1EGA Protection Functions Figure 15 Short circuit

6.3 Over Temperature Protection

ϑj Over_Temp.emf t latch reset latch reset VIN tVDEN ϑjt latch reset latch t The internal logic permanently monitors the junction temperature of the output stage. In the event of an over temperature (Tj > Tjt) the output will switch off imme diately. Please refer to Figure 16 for details.The protective switch off remains latched until the faul t is acknowledged and reset by a falling edge at the DEN pin. See also Chapter 6.4. Figure 16 Over temperature detection

6.4 Infineon ® INTELLIGENT LATCH - fault acknowledge and latch reset

The BTS50070-1EGA provides Infineon  INTELLIGENT LATCH to avoid permanent resetting of a protective, latched switch off in PWM applications. To reset a latched protective switch off the fault has to be acknowledged by a falling edge at the DEN pin. For a reset signal it’s recommended to set the DEN signal to HIGH for 20µs before setting DEN to LOW for 20µs. Please refer to Figure for details.

fault_acknowledge.emf IN t VOUT over temp. / short circuit Ibb t t t DEN t latch reset latch reset Datasheet 20 V1.0, 2009-04-06 Smart High-Side Power Switch BTS50070-1EGA Protection Functions Infineon INTELLIGENT LATCH - fault acknowledge and latch reset

6.5 Reverse Polarity Protection - ReverSave TM

Reverse.emf -IL -Vbb control chip base chip VON(rev) LOAD GND OUT VBB Vbb The device can not block a current flow in reverse battery condition. In order to minimize power dissipation, the device offers ReverSave TM functionality. Under revers e polarity conditio n, the output sta ge will be switched on, provided a sufficient gate to source voltage is generated VGS≈VGND_bb. Please refer to Figure 17 for details. Figure 17 Reverse battery protection Use the following formula for estimation of overall power dissipation Pdiss(rev) in reverse polarity mode. Note: No protection mechanism is active during reverse polarity. The control chip is not functional. Potentials of logic pins can become negative. Affected pins have to be protected by means of series resistors. Pdiss(rev) RON(rev) IL 2⋅≈

Datasheet 21 V1.0, 2009-04-06 Smart High-Side Power Switch BTS50070-1EGA Protection Functions

6.6 ESD Protection

All logic pins have ESD protection. Beside the output clamp for the power stage as described in Section 5.5 there is a clamp mechanism implemented for pin IS. See Figure 18 for details. Figure 18 Over-Voltage Protection

6.7 Loss of Ground Protection

In case of complete loss of the device ground connections the BTS50070-1EGA securely changes to or remains in OFF state, if the sense resistor RIS is higher than 500Ω.

6.8 Loss of Load Pr otection, Loss of Vbb Protection

Vbb _disconnect .emf VD VZL control chip base chip LOAD GND OUT VBB logic Vbb _Load _disconnect .emf VZb control chip base chip LOAD GND OUT VBB logic VZa In case of loss of load with charged primary inductances the maximum supply voltage has to be limited. It is recommended to use a Z-diode, a varistor ( VZa < 42 V) or Vbb clamping power switches with connected loads in parallel. In case of loss of V bb connection with charged inductiv e loads, a current path with load current capability has to be provided, to demagnetize the charged inductances. It is recommended to use a diode, a Z-diode or a varistor (VZb < 16 V, VZL+VD < 16 V, ). For higher clamp voltages currents through all pins have to be limited according to the maximum ratings. Please refer to Figure 19 for details. Figure 19 Loss of Vbb In case of complete loss of Vbb the BTS50070-1EGA remains in OFF state. OverVoltage .emf control chip base chip GND OUT Vbb DEN IS IN ESD protection

Datasheet 22 V1.0, 2009-04-06 Smart High-Side Power Switch BTS50070-1EGA Protection Functions

6.9 Electrical Characteris tics: Protection Functions

Note: Characteristics show the deviation of parameters at the given supply voltage and junction temperature. Typical values show the typical parameters expected from manufacturing Pos. Parameter Symbol Limit Values Unit Conditions Min. Typ. Max. Short circuit shutdown threshold (SCT) IL(SC)high 90 150 200 A VIN = 5 V Vbb(0) < Vbb(SCT) Short circuit shutdown threshold at high battery voltages IL(SC)low 42 70 95 A VIN = 5 V Vbb(0) > Vbb(SCT) Supply voltage for reduced short circuit shutdown threshold Vbb(SCT) 20 22 25 V Thermal shut down temperature Tjt 150 170 1) Not subject to production test, specified by design - °C - On-State resistance in case of reverse polarity Vbb=-8V, Tj=150°C 1) Vbb=-12V, Tj=150°C RON(rev) 23.5 mΩ IL = -10A, RIS = 1 kΩ Over-voltage protection Sense pin VIS(CL) 5.5 7 - V IIS = -2 mA Vbb = 9 V to 16 V, Tj = -40 °C to +150 °C (unless otherwise specified) typical values: Vbb = 13.5 V, Tj = 25 °C Over-Load Protection 6.9.1 6.9.1 6.9.2 6.9.3 Reverse Battery 6.9.4 Over-Voltage 6.9.5

Datasheet 23 V1.0, 2009-04-06 Smart High-Side Power Switch BTS50070-1EGA Diagnostic Functions

7 Diagnostic Functions

For diagnosis purposes, the BTS50070-1EGA provides an Infineon ENHANCED SENSE signal at the pin IS.

7.1 Diagnosis Enable

Sense.emf fault ESD protection Vbb RIS GND current sense OUT IIS(faul t ) IL/kILIS IS VIS IL GND Vb,IS reporting enable VBB IIS INTELLIGENT LATCH open load @OFF detection ≥1IL>IL( SC ) ϑj>ϑjT IN DEN VDS <VDS( OL) VDS SQ RQ open load diagnosis IL(OL) In ON-State, diagnosis is allways enabled. Providing a low signal at the DEN pin will disable the reporting. In OFF- state, both, reporting and diagnosis can be disabled by a low signal at DEN pin. The pin IS will be set to tri-state mode when a low signal is provided at the DEN pin. A high signal at the DEN pin enables the reporting and the open load and short to battery diagnosis during OFF mode. A falling edge at the DEN resets a preceding latched output and reporting condition. Please see Figure 20 and Table 1 for details. Figure 20 Block Diagram: Diagnosis

Operation Mode Input (IN) Level Output Level Diagnostic Output (IS) DEN = H DEN = L Normal Operation (ON) H ~Vbb IIS = IL / kILIS Z Inverse Operation (-IL) >Vbb Z Short Circuit to GND Z IIS(fault) Over Temperature Z IIS(fault) Short Circuit to Vbb Vbb IIS<IL/kILIS Open Load ~Vbb Z Protective switch-off resulting from Short Circuit to GND or Over Temperature 1) Output and fault reporting remains la tched until falling DEN edge acknowledge. X Z IIS(fault) Z Normal Operation (OFF) L Z Z Z Inverse Operation (-IL) >Vbb IIS(fault) Short Circuit to GND Z IIS(fault) 2), Z 2) Before fault acknowledgement and latch reset. 3) After fault acknowledg ement and latch reset. Over Temperature Short Circuit to Vbb >Vbb-VDS(OL) <Vbb-VDS(OL) IIS(fault) Z Open Load >Vbb-VDS(OL) <Vbb-VDS(OL) IIS(fault) Z L = Low Level, H = High Level, Z = high impedance, only leakage provided, potential depends on external circuit Datasheet 24 V1.0, 2009-04-06 Smart High-Side Power Switch BTS50070-1EGA Diagnostic Functions

7.2 Diagnosis during ON

During normal operation, an enabled IS pin provides a sense current, which is proportional to the load current as long as Vb,IS>5V and as long as IIS*RIS<VZ,IS. The ratio of the output current is defined as kILIS=IL/IIS. During switch- on sense current is provided after a sense settling time tsIS(ON). During inverse operation and switch-off no current is provided. The output sense current is limited to IIS,lim. Please refer to Figure 21 for details.

sense_enable .emf IIS t DEN t tsIS( DEN) td IS( DEN) reset protective latch Datasheet 26 V1.0, 2009-04-06 Smart High-Side Power Switch BTS50070-1EGA Diagnostic Functions Figure 23 Timing of Sense Enable Signal fault acknowledge@ON .emf IN t VOU T Short / Over Temp t t DEN t t IIS IL/kILIS latch reset latch reset IIS( fault) During fault condition an enabled IS pin provides a defined fault current IIS(fault). Fault conditions are over-current, over-temperature and short circuit switch -off. Any protective switch-off during on-state causes a latched OFF of the output and reporting, until being reset by a falling edge at the pin DEN. See Figure 24 for details. Figure 24 Fault acknowledge and latch reset

7.3 Diagnosis during OFF

fault@OFF.emf IN t VOUT t DEN t t IIS Vbb-VDS(OL) IIS ( fault) IOL t td(OL) During normal operation a disabled IS pin provides no current. In case of shorted load to battery, open load or inverse operation an enabled IS pin provides a defined fault current IIS(fault). See Figure 25 for details. Figure 25 Fault reporting

Datasheet 27 V1.0, 2009-04-06 Smart High-Side Power Switch BTS50070-1EGA Diagnostic Functions

7.4 Diagnosis Disable

In order to achieve minimum standby current, the IN pin and the DEN pin have to be low level. A possible preceding fault condition and reporting has to be reset by a falling edge at the pin DEN. See also Chapter 6.4 for details.

Datasheet 28 V1.0, 2009-04-06 Smart High-Side Power Switch BTS50070-1EGA Diagnostic Functions

7.5 Electrical Characteris tics: Diagnostic Functions

Note: Characteristics show the deviation of parameters at the given supply voltage and junction temperature. Typical values show the typical parameters expected from manufacturing. Vbb = 9 V to 16 V, Tj = -40 °C to +150 °C (unless otherwise specified) typical values: Vbb = 13.5 V, Tj = 25 °C Pos. Parameter Symbol Limit Values Unit Conditions Min. Typ. Max. Input characteristics for Diagnosis Enable 7.5.1 L-input level VDEN(L) -0.3 - 1.0 V – 7.5.2 H-input level VDEN(H) 2.0 - 5.5 V – 7.5.3 input hysteresis VDEN(hys) – 100 - mV 1) 7.5.4 input pull down resistor RDEN 50 100 200 kΩ – Load Current Sense

7.5.5 Current sense ratio, static on-

kILIS - 21 - k VIN = VDEN = 5 V, IIS < IIS(lim), VIS < VZ,IS, Vb,IS > 5 V IL=40A IL=10A IL=5A IL=1.5A 12.5 25.6 27.5 31.5 VIN = 0 (e.g. during de energizing of inductive loads) disabled – – 7.5.6 Sense saturation current 1) IIS(lim) 3.5 6 10 mA VDEN = 5 V, VON < 400 mV, typ. Vb,IS > 5 V

7.5.7 Sense current under fault

IIS(fault) 3.5 6 10 mA VDEN = 5 V, Vb,IS > 5 V, VON > 400 mV,typ. or VOFF<VDS(OL) 7.5.8 Current sense leakage current IIS(LL) – 0.1 0.5 µA VIN=VDEN=0V

7.5.9 Current sense offset current

Tj = -40 °C, Tj = 25 °C Tj = 150 °C IIS(LH) µA VIN=VDEN=5V, IL ≤ 0A

7.5.10 Current sense leakage, while

IIS(dis) – 1 2 µA VIN = 5V, VDEN = 0V

7.5.11 Current sense settling time to 90%

IIS_stat. tsIS(ON) – 350 700 µs VIN = 0N5V (switch- on), VDEN = 5 V, RL = 0.5 Ω

7.5.12 Current sense settling time to 10%

IIS_stat. tsIS(OFF) – 8 30 µs VIN = 5P0V (switch- off), VDEN = 5V, RL = 0.5Ω

7.5.13 Current sense settling time to 90%

IIS_stat. tsIS(LC) – 15 50 µs VIN=VDEN=5V, IL = 10N20A

7.5.14 Current sense settling time to 90%

IIS_stat. tsIS(DEN) – 8 30 µs VIN = 5V, OUT=ON, VDEN = 0N5V

Datasheet 29 V1.0, 2009-04-06 Smart High-Side Power Switch BTS50070-1EGA Diagnostic Functions

7.5.15 Current sense deactivation time to

10% IIS_stat. tdIS(DEN) – 2 20 µs VIN = 5V, VDEN = 5P0V Open Load at OFF state

7.5.16 Open load output current IL(OL) 3 5 10 mA VIN = 0V,

VDEN = 5V, VDS = 2V

7.5.17 Open load detection threshold

VDS(OL) 2 2.8 3.5 V VIN = 0V, VDEN = 5V

7.5.18 Open load blanking after negative

td(OL) – 0.3 1 ms VIN = 5P0 V, VDEN = 5V, Vbb = 13.5V, 1) Not subject to production test, specified by design Vbb = 9 V to 16 V, Tj = -40 °C to +150 °C (unless otherwise specified) typical values: Vbb = 13.5 V, Tj = 25 °C Pos. Parameter Symbol Limit Values Unit Conditions Min. Typ. Max.

Datasheet 30 V1.0, 2009-04-06 Smart High-Side Power Switch BTS50070-1EGA Application schematic

8 Application schematic

Figure 26 shows an example for an application schematic. Figure 26 application example Note: This is a simplified example of an application circuit. The function must be verified in the real application.

8.1 Hints for PCB layout

  • Handling of NC pins: It is recommended to connect all NC pins on a defined potential. E.g. pin 7 and pin 12 could be connected to OUT potential, while pin 5 and 6 could be connected to OUT or DEN.
  • EMC filter cap between Vbb and GND: It is recommended to place the filter cap as close as possible to the device to minimize the inductance of the loop.
  • The resistors connecting µC and IN-pin as well as µC and DEN-pin are recommended to protect the µC inputs against fast electrical transients.
  • Ground shift: It is recommended to avoid a ground sh ift between µC ground and device pin GND of more than 0.3V during normal operation.

8.2 Further Application Information

  • Please contact us to get the Pin FMEA
  • Please contact us to get a test report on shor t circuit robustness according to AEC Q100-012
  • Please contact us for Application Note “Diagnosis with BTS500x0-1EGA”
  • For further information you may contact http://www.infineon.com/ application _example.emf IN VBB GND1k OUTDEN GND Vbat +5V IS 10K µC 47nF 47nF LOAD10K 10K BTS50070-1EGA

Datasheet 31 V1.0, 2009-04-06 Smart High-Side Power Switch BTS50070-1EGA Package Outlines

9 Package Outlines

2.35±0.1 1) Does not include plastic or metal protrusion of 0.15 max. per side (Heatslug)STANDOFF Index Marking 1 2.6 MAX. 7.8 0+0.1 6 1 7 12 0.8 ±0.1 (1.55) 0.25 5˚±3˚ Heatslug 10.3±0.3 0.25 B 7.5±0.11) B +0.075-0.035 0.7±0.15 A6.4±0.11) +0.130.40.25 M AC B 12x ±0.11.6 ±0.14.2 5.1±0.1 Bottom View Seating Plane 12x 0.1 C C (0.2) 0.1 STANDOUT ±0.05 5 x 1 = 5 0.1 8.1 9.4 0.65 MAX.4.5 1.67 Figure 27 PG-DSO-12-16 (Plastic Dual Small Outline Package) Green Product (RoHS compliant) You can find all of our packages, sorts of packing and others in our Infineon Internet Page “Products”: http://www.infineon.com/products. Dimensions in mm To meet the world-wide customer requirements for environmentally friendly products and to be compliant with government regulations the device is available as a green product. Gree n products are RoHS-Compliant (i.e Pb-free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020).

Datasheet 32 V1.0, 2009-04-06 Smart High-Side Power Switch BTS50070-1EGA

Revision History

Revision History: V1.0, 2009-04-06 Version Date Changes Datasheet Rev. 1.0 2009-04-06 Initial version of datasheet.

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© 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.