BTS50005-1LUA

BTS50005-1LUA INFINEON | Alldatasheet

Document overview

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Technical content

Features

• PRO-SIL ™ ISO 26262-ready for supporting the integrator in evaluation of hardware element according to ISO 26262:2018 Clause 8-13
• One channel device
• Low stand-by current
• Reverse ON protection for low power dissipation in reverse battery condition
• Ground loss protection
• Electrostatic discharge protection (ESD)
• Optimized electromagnetic compatibility (EMC)
• Compatible to cranking pulses
• Integrated diagnostic functions
• Integrated protection functions
• Green product (RoHS compliant) Potential applications
• Suitable for resistive, inductive and capacitive loads
• Replaces electromechanical relays, fuses and discrete circuits
• Most suitable for application with high current loads, such as heating system, fan and pump
• PWM applications with low frequency Product validation Qualified for automotive applications. Product validation according to AEC-Q100 grade 1.

Description

The device is a 0.6 mΩ single channel smart high-side power switch, available in a PG-HSOF-8 package, providing protective functions and diagnosis. It contains Reverse ON functionality. It is especially designed to drive high current loads, for applications like heaters, glow plugs, fans and pumps. Microcontroller VDD GPIO VSS VS IN DEN IS GND OUT C vs Logic supply T 1 Optional C OUTC SENSE R IN R DEN R IS_PROT R IS R OL Control Protection Diagnosis R/ L cable R/ L cable GPIO A/D IN RLOAD VBAT C IS Conditional Application diagram Product type Package Marking BTS50005-1LUA PG-HSOF-8 S50005A BTS50005-1LUA Datasheet Datasheet Please read the sections "Important notice" and "Warnings" at the end of this document Rev. 1.10 www.infineon.com 2023-04-18

Datasheet 2 Rev. 1.10 2023-04-18

Datasheet 3 Rev. 1.10 2023-04-18

1 Product description

1.1 Product summary

Operating voltage VS(NOM) 5.8 V … 18 V Extended supply voltage range VS(EXT) 3.1 V...28 V Maximum on-state resistance (TJ = 150°C) RDS(ON) 1.1 mΩ Minimum nominal load current (TA = 85°C) IL(NOM) 57 A Typical current sense ratio dkILIS 50000 Minimum short circuit current threshold ICL(0) 150 A Maximum reverse battery voltage -VS(REV) -18 V Maximum stand-by current at TJ = 25 °C IVS(OFF) 3 µA

1.2 Integrated diagnosis and protection functions

Integrated diagnosis functions

• Proportional load current sense
• Open load detection in on and off state
• Diagnosis enable pin
• Latched status signal after short circuit or overtemperature detection Integrated protection functions
• Reverse ON: Reverse battery protection by self turn on of power MOSFET
• Short circuit protection with latch
• Overtemperature protection with latch
• Enhanced short circuit operation
• Smart clamping for inductive loads demagnetization BTS50005-1LUA Datasheet

Datasheet 4 Rev. 1.10 2023-04-18

2 Block diagram

Gate control & charge pump Load current sense Smart clamp Overcurrent switch off GND IN DEN VS OUT ISESD protection Figure 2 Block diagram VS OUT IS

75 V75 V

3 M Ω

R DEN(PULL_DOWN) R IN(PULL_DOWN) Figure 3 Internal diode diagram VS OUT IS GND DEN IN V S V IN V DEN V IS I IN I DEN V SIS I VS I GND I L V DS V OUT I IS Figure 4 Voltage and current definition BTS50005-1LUA Datasheet Datasheet 5 Rev. 1.10 2023-04-18

3 Pin configuration

Table 2 Pin definitions and function Pin Symbol Function

1 GND Ground pin

2 IS Sense pin: analog/digital signal for diagnosis, if not used: left open

3 IN Input pin: digital signal to switch on channel (active high)

4 DEN Diagnosis enable: digital signal to enable the diagnosis (active high)

5, 6, 7, 8 OUT Output pin: protected high side power output channel Cooling tab VS Supply voltage: battery voltage BTS50005-1LUA Datasheet Datasheet 6 Rev. 1.10 2023-04-18

4 General product characteristics

4.1 Absolute maximum ratings

Table 3 Absolute maximum ratings TJ = -40°C to +150°C; all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) Parameter Symbol Values Unit Note or condition P-Number Min. Typ. Max. Supply voltages Supply voltage VS -0.3 – 35 V 1) PRQ-50 Reverse polarity voltage VS(REV) -18 – – V 2) 1) TA = 25°C t ≤ 5 min. RL ≥ 0.32 Ω PRQ-51 Load dump voltage VS(LD) – – 43 V 1) Suppressed Load Dump acc. to ISO16750-2 RI = 2 Ω td = 200 ms Us = 100 V RL = 0.32 Ω RIS = 1 kΩ VS(LD) = US* PRQ-52 Short circuit capability Supply voltage for short circuit protection VS(SC) 3.1 – 18 V 1) According to the test circuit defined in figure 1 of AEC- Q100-012 with LSUPPLY = 0.5..5 µH LSHORT = 0..5 µH RMIN = 10 mΩ PRQ-53 Input pin (IN) Voltage at IN pin VIN VS - 75 – VS + 0.3 V 1) PRQ-54 Current through IN pin IIN -50 – 50 mA 1) PRQ-55 Maximum input frequency fIN – – 200 Hz 1) 5.8 V < VS < 28 V PRQ-56 Maximum retry cycle rate in fault condition fFAUL T – – 200 Hz 1) PRQ-57 Diagnosis enable pin (DEN) Voltage at DEN pin VDEN VS - 75 – VS + 0.3 V 1) PRQ-162 Current through DEN pin IDEN -50 – 50 mA 1) PRQ-163 Sense and diagnosis pin (IS) Voltage at IS pin VIS VS - 75 – VS + 0.3 V 1) PRQ-58 (table continues...) BTS50005-1LUA Datasheet Datasheet 7 Rev. 1.10 2023-04-18

Table 3 (continued) Absolute maximum ratings TJ = -40°C to +150°C; all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) Parameter Symbol Values Unit Note or condition P-Number Min. Typ. Max. Current through IS pin IIS -50 – 50 mA 1) PRQ-59 Power stage Maximum energy dissipation by switching off inductive load single pulse over lifetime EAS – – 450 mJ 1) VS = 13.5 V IL = 42 A TJ(0) ≤ 150°C See Figure 6 PRQ-60 Maximum energy dissipation repetitive pulse EAR – – 160 mJ 1) VS = 13.5 V, IL = 42A, TJ(0) ≤ 105°C See Figure 6 1M cycles PRQ-61 Voltage at OUT pin VS - VOUT -0.3 – 35 V 1) PRQ-62 Temperatures Junction temperature TJ -40 – 150 °C 1) PRQ-63 Dynamic temperature increase while switching ΔTJ – – 60 K 1) PRQ-64 Storage temperature TSTG -55 – 150 °C 1) PRQ-65 ESD susceptibility ESD susceptibility (all pins) VESD(HBM) -2 – 2 kV 1) Human body model "HBM" according to AEC Q100-002 PRQ-66 ESD susceptibility OUT pin vs. VS VESD(HBM) -4 – 4 kV 1) Human body model "HBM" according to AEC Q100-002 PRQ-67 ESD susceptibility (all pins) VESD(CDM) -500 – 500 V 1) Charge device model "CDM" according to AEC Q100-011 PRQ-175 ESD susceptibility (corner pins) VESD(CDM) -750 – 750 V 1) Charge device model "CDM" according to AEC Q100-011 PRQ-176 1) Not subject to production test, specified by design. 2) The device is mounted on a FR4 2s2p board according to Jedec JESD51-2,-5,-7 at natural convection. BTS50005-1LUA Datasheet Datasheet 8 Rev. 1.10 2023-04-18

EA[mJ]IL(0)[A] EAS, TJ(0) ≤ 150°CEAR, TJ(0) ≤ 105°C EAS, TJ(0) < 150°C EAR, TJ(0) < 105°C Figure 6 Maximum energy dissipation for inductive switch off, EAS/AR vs. IL at VS = 13.5 V Tj(0) [°C] EAR derating Figure 7 Maximum energy dissipation repetitive pulse temperature derating Note: 1. Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2. Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are not designed for continuous repetitive operation. BTS50005-1LUA Datasheet Datasheet 9 Rev. 1.10 2023-04-18

4.2 Functional description

Parameter Symbol Values Unit Note or condition P-Number Min. Typ. Max. Supply voltage range for nominal operation VS(NOM) 5.8 – 18 V 1) PRQ-68 Supply voltage range for extended operation VS(EXT) 3.1 – 28 V 2) 1) Parameter deviation possible PRQ-69 1) Not subject to production test, specified by design. 2) Protection function still operative Note: Within the functional or operating range, the IC operates as described in the circuit description. The electrical characteristics are specified within the conditions given in the Electrical Characteristics table.

4.3 Thermal resistance

Note: This thermal data was generated in accordance to JEDEC JESD51 standards. For more information, go to www.jedec.org. Table 5 Thermal resistance Parameter Symbol Values Unit Note or condition P-Number Min. Typ. Max. Junction to case RthJC – – 0.4 K/W 1) PRQ-70 Junction to ambient RthJA(2s2p) – 18 – K/W 1) PRQ-71 Junction to ambient RthJA(1s0p) /600mm² – 32 – K/W 1) PRQ-72 1) Not subject to production test, specified by design. 2) The specified RthJA value is according to Jedec JESD51-2,-5,-7 at natural convection on FR4 2s2p board. The product (chip+package) was simulated on a 76.2 × 114.3 × 1.5 mm board with 2 inner copper layers (2 × 70 µm Cu, 2 × 35 µm Cu). Where applicable a thermal via array under the exposed pad contacted the first inner copper layer. Simulation done at TA = 105°C, PDISSIPATION = 2W. 3) The specified RthJA value is according to Jedec JESD51-2,-5,-7 at natural convection on FR4 1s0p board. The product (chip+package) was The figure below shows the typical thermal impedance of BTS50005-1LUA mounted according to JEDEC JESD51-2,-5,-7 at natural convection on FR4 1s0p and 2s2p boards. BTS50005-1LUA Datasheet Datasheet 10 Rev. 1.10 2023-04-18

0.01 0.1 100 ZthJA[K/W] t [sec] JEDEC 1s0p / 600mm² JEDEC 1s0p / 300mm² JEDEC 1s0p / footprint JEDEC 2s2p Figure 8 Typical transient thermal impedance Z th(JA) = f(time) for different PCB conditions BTS50005-1LUA Datasheet Datasheet 11 Rev. 1.10 2023-04-18

5 Functional description

5.1 Power stage

The power stage is built by an N-channel power MOSFET with a charge pump.

5.1.1 Output on-state resistance

The on-state resistance RDS(ON) depends on the supply voltage as well as on the junction temperature TJ. Chapter 6 shows the dependencies in terms of temperature and supply voltage, for the typical on-state resistance. The behavior in reverse polarity is described in Chapter 5.3.3.

5.1.2 Switching resistive loads

The figure below shows the typical timing when switching a resistive load. The power stage has a defined switching behavior. t ON(DELAY) t r V OUT V IN t OFF(DELAY) t f dV ON/dt dV OFF/dt t t 80% V S 50% V S 25% V S 20% V S t ON t OFF Figure 9 Switching a resistive load: timing

5.1.3 PWM switching

Consider the switching losses properly during this operation (see following equation): PTOTAL = switcℎ_on_energy + switcℎ_off_energy + IL 2 × RDS ON × tDC Period (1) If a fault condition occurs, ensure that the PWM frequency does not exceed a maximum retry frequency of fFAUL T. BTS50005-1LUA Datasheet Datasheet 12 Rev. 1.10 2023-04-18

t V IN(H)MAX V IN(L)MIN Switch_on_energy Switch_off_energy R DS(ON) * ( I L )² Figure 10 Switching in PWM

5.1.4 Switching inductive loads

5.1.4.1 Output clamping

When switching off inductive loads with high side switches, the voltage VOUT drops below ground potential, because the inductance intends to continue driving the current. To prevent the destruction of the device due to high voltages, there is a smart clamping mechanism implemented that keeps negative output voltage to a certain level (VS - VDS(CL)). Please refer to Figure 11 and Figure 12 for details. Nevertheless, the maximum allowed load inductance remains limited. Smart clamp V S V IN IN VS OUT V DS V OUT I L L, R L LOGIC GND Figure 11 Output clamp BTS50005-1LUA Datasheet Datasheet 13 Rev. 1.10 2023-04-18

t V OUT tV S -V DS(FAST_OFF) V S -V DS(CL) I L t T J t T J(0) V S Figure 12 Switching an inductance The device features a fast switch off when driving an inductive load in order to increase the energy capability. The fast turn off is triggered when VDS is higher than VDS(FAST_OFF). The device must not be reactivated (VIN goes from low to high) before tIN(RESETDELAY). Otherwise the device may not turn on and can be latched.

5.1.4.2 Maximum load inductance

During the demagnetization of inductive loads, the energy must be dissipated in the device. This energy can be calculated using the following equation: E = VDS CL × L RL VS − VDS CL RL × ln 1 − RL × IL VS − VDS CL + IL (2) The following equation simplifies under the assumption of RL = 0 Ω. E = 1 2 × L × IL 2 × 1 − VS VS − VDS CL (3) The energy, which is converted into heat, is limited by the thermal design of the component. See Figure 6 for the maximum allowed energy dissipation as a function of the load current. BTS50005-1LUA Datasheet Datasheet 14 Rev. 1.10 2023-04-18

5.1.5 Advanced switch-off behavior

In order to reduce device stress when switching off inductive and critical loads, the device provides an advanced switching off functionality which results in a faster switching off behavior. The fast switch off functionality is triggered by each of the following conditions:

• The device is turned off by applying VIN(L) at the IN pin. During the switch off operation the OUT pins’ voltage in respect to VS pin drops below VDS(FAST_OFF). See Figure 12.
• The device is turned on or is already in on state. The device then detects a short circuit condition ( IL ≥ ICL(0)) and
• The device is turned on or is already in on state. The device then detects an overtemperature condition.
• The device is turned on or is already in on state. The device then detects an overpower condition.

5.1.6 Inverse current behavior

When VOUT > VS, a current flows into the power output transistor. This condition is known as “inverse current” . If the channel is in off state, the current flows through the intrinsic body diode generating high power losses therefore an increase of overall device temperature. If the channel is in on state, the power dissipation in the output stage is comparable to normal operation in RDS(ON). During inverse current condition, the channel remains in on or off state and it is possible to switch on as long as |-IL| < |-ICL(0)|. V IN t t DMOS state t IL NORMAL NORMAL INVERSE ON CASE 1: inverse current happens when DMOS is on V IN t t DMOS state t IL NORMAL NORMAL INVERSE OFF CASE 2: inverse current happens when DMOS is off V IN t t DMOS state t IL NORMAL NORMAL INVERSE ON CASE 3: DMOS is turned on during inverse current V IN t t DMOS state t IL NORMAL NORMAL INVERSE OFF CASE 4: DMOS is turned off during inverse current ON OFF ON OFF ON ONOFF OFF Figure 13 Channel behavior in case of applied inverse current BTS50005-1LUA Datasheet Datasheet 15 Rev. 1.10 2023-04-18

5.2 Input pin

The input circuitry is compatible with 3.3 V and 5 V microcontroller. It can also be connected to VS directly. The maximum voltage on the input pin is referenced to VS and can go below the ground. See input pin in Table 3. The figure below shows the electrical equivalent input circuitry. VS

75 V To internal

R IN(PULL_DOWN) Figure 14 Simplified schematics of the IN pin circuitry

5.3 Protection functions

The device provides integrated protection functions. Integrated protection functions are designed to prevent the destruction of the IC from fault conditions described in the datasheet. Fault conditions are considered as outside normal operating range. Protection functions are designed neither for continuous nor for repetitive operation. The figure below describes the typical functionality of the diagnosis and protection block. ESD protection Driver Power shutdown Overcurrent detection Open load in off ESD protection IN DEN OUT VS Fault Temperature sensor t IN(RESETDELAY) T J > T J(TRIP) IL > ICL(0) IIS(FAUL T) 10 1 S R Q Q IS  1 IL d k ILIS + IISO Figure 15 Diagram of diagnosis and protection blocks BTS50005-1LUA Datasheet Datasheet 16 Rev. 1.10 2023-04-18

5.3.1 Overload protection

In case of overload, high inrush current or short circuit to ground, the device offers several protection mechanisms. An overcurrent, an overtemperature or an overpower shutdown switch off the output and latches the device. There are two ways to reset the internal latch:

• Set VIN < VIN(L) for t > tIN(RESETDELAY).
• VS < VS(UVL) for t > tIN(RESETDELAY). For overload (short circuit or overtemperature), the maximum retry cycle (fFAUL T) under fault condition must be considered.

5.3.1.1 Activation of the switch into short circuit (short circuit type 1)

When the switch is activated into short circuit, the current is rising. When the output current reaches the ICL(0) value, the device latches and turns off after tOFF(TRIP) regardless the output current value.

5.3.1.2 Short circuit appearance when the device is already on (short circuit type 2)

When the device is in on state and a short circuit to ground appears at the output with an overcurrent higher than ICL(0), the device automatically turns off and latches.

5.3.1.3 Overpower shutdown (PSD)

The device integrates an overpower shutdown protection in order to limit the power dissipation. This protection intends to limit the maximum junction temperature in case of soft short circuit (IL < ICL(0)), repetitive short circuit or short circuit at low voltage. If there is a short circuit at low voltage with a high resistor or an inductor in the battery line, VS can drop below VS(PSD) and the load current does not reach ICL(0) . In these conditions, the overpower shutdown protection activates and latches the device after tPSD(UV) . Note: Overpower shutdown also limits the maximum PWM frequency below f IN. See Figure 16 below: V IN t V DEN t V OUT tIIS t Input frequency < max( fIN ) Input frequency < max( fIN ) Input frequency > max( fIN ) Normal operation Normal operationMissing pulses IIS(FAUL T) d k ILIS IL + I S0 Device latches Figure 16 Behavior during PWM operation above fIN max BTS50005-1LUA Datasheet Datasheet 17 Rev. 1.10 2023-04-18

t V S t V S(PSD) V S(UVL) I L t I CL(0) V DS t V DS(PSD) t PSD(UV) I IS t I IS(FAUL T) t PSD(UV) Short-circuit type 2 Short-circuit type 1 V S Figure 17 Overpower shutdown behavior at low voltage

5.3.1.4 Temperature limitation in the power DMOS

The device incorporates a temperature sensor. Triggering the overtemperature (TJ(TRIP)) switches off the power MOSFET to prevent destruction and latches the device.

5.3.2 Ground loss protection

In case of loss of module or device ground, while the load remains connected to ground, the device protects itself by automatically turning off (when it was previously on) or remains off, regardless of the voltage applied at IN pin. BTS50005-1LUA Datasheet Datasheet 18 Rev. 1.10 2023-04-18

5.3.3 Reverse battery protection

In case of reverse polarity, the intrinsic body diode of the power DMOS causes power dissipation. To limit the risk of overtemperature, the device provides Reverse ON functionality. The power in this intrinsic body diode is limited by turning the DMOS on. The DMOS resistance is then equal to RDS(REV). Additionally, the current into the logic has to be limited with RIN and RDEN because there is a current path in the microcontroller. The device includes a RGND resistor which limits the current without any external resistor. RIS is used to limit the current into IS pin. See Chapter 7. R IS_PROT R IS IS GND OUT R LOAD IN/DEN VS Microcontroller Current path during reverse battery R IN/DEN R GND V BAT Figure 18 Reverse battery current path

5.4 Diagnosis functions

For diagnosis purposes, the device provides a combination of digital and analog signals at pin IS. Fault IS I IS(FAUL T) I L d k ILIS + I IS0 DEN VS Figure 19 Diagnosis block diagram BTS50005-1LUA Datasheet Datasheet 19 Rev. 1.10 2023-04-18

5.4.1 DEN pin

The DEN input circuitry is compatible with 3.3 V and 5 V microcontroller or can be directly connected to VS. The maximum voltage on the DEN pin is referenced to VS and can go below the ground. See DEN pin in Table 3. The figure below shows the electrical equivalent DEN input circuitry. VS R DEN(PULL_DOWN) Figure 20 Simplified schematics of the DEN pin circuitry

5.4.2 Overview

Operation mode VIN VDEN VOUT Diagnosis output Normal condition Low (OFF) High GND IIS(OFF) Short circuit to GND GND IIS(OFF) Overtemperature GND IIS(OFF) Short circuit to VS VS IIS(FAUL T) Open load VOUT > VOUT(OL_OFF) 1) IIS(FAUL T) VOUT < VOUT(OL_OFF) IIS(OFF) Normal condition High (ON) ~ VS IIS = IL / dkILIS + IIS0 Short circuit to GND GND IIS(FAUL T) Overtemperature GND IIS(FAUL T) Short circuit to VS VS IIS ≤ IL / dkILIS + IIS0 Open load VS IIS0 if IIS0 positive, IIS(OFF) if IIS0 negative All conditions n.a. Low n.a. IIS(OFF) 1) With additional pull-up resistor

5.4.3 Diagnosis in on state

A current proportional to the load current is provided at IS pin when the following conditions are fulfilled:

• The power output stage is switched on with VS - VIS > 3.5V.
• The diagnosis is enabled. BTS50005-1LUA Datasheet

Datasheet 20 Rev. 1.10 2023-04-18

• No fault is present or was present.
• The RIS recommended value is 1kΩ. A current IIS(FAUL T) is provided at IS pin if:
• If a “hard” failure mode is present or was present.
• The diagnosis is enabled. Figure 21 and Figure 22 show the current sense as function of the load current in the power DMOS. Usually, a pull-down resistor RIS is connected to the current sense pin IS. The dotted curve represents the typical sense current, assuming a typical dkILIS factor value. The range between the two solid curves shows the sense accuracy range that the device is able to provide, at a defined current. IIS = IL dkILIS + IIS0 with IIS ≥ 0 (4) Where the definition of dkILIS is: dkILIS = IL2 − IL1 IIS2 − IIS1 (5) the definition IIS0 is: IIS0 = IIS1 − IL1 dkILIS (6) and the definition of IL0 is: IL0 = IL1 − IIS1 × dkILIS (7) 00.511.522.533.54 0 4080120160 IIS[mA] IL[A] MAX TYP MIN IL1 IL2 dk ILIS dk ILIS(min) dk ILIS(max) Figure 21 Current sense at IS pin as a function of load current BTS50005-1LUA Datasheet

Datasheet 21 Rev. 1.10 2023-04-18

-0.6-0.30 0.30.6 IIS[µA] IL[A] MAX TYP MINIIS0(max)IIS0(min)IL0(min)IL0(max) dkILIS dkILIS(min) dkILIS(max) Figure 22 IIS0 and IL0 definition

5.4.3.1 Sense signal variation and calibration

In some applications, an enhanced accuracy is required around the device's nominal current range IL(NOM). To achieve this accuracy requirement, calibration on the application is possible. After two-point calibration, the device has a limited IIS value spread at different load currents and temperature conditions. The IIS variation can be described with the parameters ∆(dkILIS(CAL)) and the ∆IIS0(CAL). The grey solid line in Figure 23 is the current sense ratio after the two-point calibration at a given temperature. The slope of this line is defined as follows: dkILIS CAL IIS CAL 2 − IIS CAL 1 IL CAL 2 − IL CAL 1 (8) The offset is defined as follows: IIS0 CAL = IIS CAL 1 − IL CAL 1 dkILIS CAL = IIS CAL 2 − IL CAL 2 dkILIS CAL (9) The grey area in Figure 23 is the range where the current sense ratio can vary across temperature and load current after performing the calibration. The accuracy of the load current sensing is improved and, given a sense current value IIS (measured in the application), the load current can be calculated as follows, using the absolute value for ∆(dkILIS(CAL)) instead of % values: IL = dkILIS CAL × 1 + Δ dkILIS CAL × IIS − IIS0 CAL − ΔIIS0 CAL (10) where dkILIS(CAL) is the current sense ratio measured after two-point calibration (defined in Equation Max IIS0, below), IIS0(CAL) is the current sense offset (calculated after two-point calibration, see Equation Min IIS0, below, and ∆IIS0(CAL) is the additional variation of the individual offset over lifetime and temperature. For calibration at 25°C ∆IIS0(CAL) varies over temperature and lifetime for all positive ∆IIS0(CAL) within the differences of the temperature-dependent maximum limits. All negative ∆IIS0(CAL) vary within the differences of the temperature-dependent minimum limits. For positive IIS0(CAL) values (IIS0(CAL) > 0): BTS50005-1LUA Datasheet Datasheet 22 Rev. 1.10 2023-04-18

MaxIIS0 @TJ = 150°C − MaxIIS0 @TJ = 25°C ≤ ΔIIS0 CAL ≤ MaxIIS0 @TJ = −40°C − MaxIIS0 @TJ = 25°C (11) For negative IIS0(CAL) values (IIS0(CAL) < 0): MinIIS0 @TJ = 150°C − MinIIS0 @TJ = 25°C ≥ ΔIIS0 CAL ≥ MinIIS0 @TJ = −40°C − MinIIS0 @TJ = 25°C (12) There are four solutions for load current, considering that ∆(dkILIS(CAL)) and ∆IIS0(CAL) can be both positive and negative. The load current IL for any sense current IIS spreads between a minimum IL value resulting from the combination of lowest ∆(dkILIS(CAL)) value and highest ∆IIS0(CAL) and a maximum IL value resulting from the combination of highest ∆(dkILIS(CAL)) value and lowest ∆IIS0(CAL). I IS I LI IS0(CAL) I IS0(CAL) + Δ I IS0(CAL) I L(CAL)1 I IS(CAL)1 I IS I L(CAL) Min. d k ILIS(CAL) d k ILIS(MIN) d k ILIS(MAX) d k ILIS(CAL) - Δ d k ILIS(CAL) d k ILIS(CAL) + Δ d k ILIS(CAL) I IS0(CAL) - Δ I IS0(CAL) I L(CAL) Typ. I L(CAL) Max. I L Min. I L Max. I IS(CAL)2 I L(CAL)2 Figure 23 Improved current sense accuracy after 2 points calibration

5.4.3.2 Sense signal timing

The figure shows the timing during setting time and disabling of the sense. V DEN I IS I L OFF V IN t sIS(IN_ON) t sIS(DEN_ON)t sIS(DEN_OFF)t sIS(LC) ON OFF t t t t Figure 24 Current sense timing in normal operation BTS50005-1LUA Datasheet Datasheet 23 Rev. 1.10 2023-04-18

I CL(1) I CL(0) short circuit 2 short circuit 1 V IN tI L I IS I IS(FAUL T) T J T A T J(TRIP) start t OFF(TRIP) t > t IN(RESETDELAY) over temperature latch is reset t pIS(FAUL T_OT) t OFF(TRIP) t t t V DEN tt > t IN(RESETDELAY) latch is reset t pIS(FAUL T_OC) t pIS(FAUL T_OC) Figure 25 IS pin behavior under protection

5.4.4 Diagnosis in off state

The device features a detection of open load when off. An internal comparator is monitoring the VOUT. If VOUT > VOUT(OL_OFF) and VDEN > VDEN(H), the curent at IS pin is IIS(FAUL T). In order to pull-up OUT in case of open load condition, an external pull-up resistor must be connected between VS and OUT pin. This external resistor must be switchable to keep the quiescent current as low as possible on VS pin. BTS50005-1LUA Datasheet Datasheet 24 Rev. 1.10 2023-04-18

t V OUT ON OFF V IN I IS(FAUL T) I IS(OFF) t pFAUL T_OL(DEN_OFF) t pFAUL T_OL(DEN_ON) V OUT(OL_OFF) t t t ON OFF Regular switch off with load connected No load connected I IS(OFF) t pFAUL T_OL(IN_OFF) I IS(OFF) t OFF(DELAY) + t f + t pFAUL T_OL(IN_OFF) t pFAUL T_OL(IN_OFF) Figure 26 Behavior of the open load detection in off feature with and without load connected

5.5 Electrical characteristics

Table 6 Electrical characteristics table VS =5.8 V to 18 V, TJ = -40°C to +150°C unless otherwise specified. For a given temperature or voltage range, typical values are specified at VS = 13.5 V, TJ = 25°C. Parameter Symbol Values Unit Note or condition P-Number Min. Typ. Max. Operating and standby currents Standby current for whole device with load IVS(OFF) – 1 3 µA VOUT = 0 V VIN = 0V VDEN = 0V TJ ≤ 85°C After 10ms PRQ-73 Standby current for whole device with load IVS(OFF_DEN) – 120 300 µA VOUT = 0 V VIN = 0V VDEN = 5V TJ ≤ 85°C After 10ms PRQ-258 Standby current for whole device with load IVS(OFF) – 35 100 µA VOUT = 0 V VIN = 0 V VDEN = 0 V TJ ≤ 150°C After 10ms PRQ-74 Supply current on GND pin IGND(ON) – 2 5 mA VIN(H) ≤ VIN ≤ VS VDEN(H) ≤ VDEN ≤ VS PRQ-186 Ground resistor RGND 130 180 230 Ω – PRQ-173 (table continues...) BTS50005-1LUA Datasheet Datasheet 25 Rev. 1.10 2023-04-18

Table 6 (continued) Electrical characteristics table VS =5.8 V to 18 V, TJ = -40°C to +150°C unless otherwise specified. For a given temperature or voltage range, typical values are specified at VS = 13.5 V, TJ = 25°C. Parameter Symbol Values Unit Note or condition P-Number Min. Typ. Max. Power stage On-state resistance in forward condition RDS(ON) – 0.6 – mΩ 1) TJ = 25°C VS ≥ 5.8 V PRQ-76 On-state resistance in forward condition RDS(ON) – 0.85 1.1 mΩ TJ = 150°C VS ≥ 5.8 V PRQ-75 On-state resistance in forward condition, low battery voltage RDS(ON) – 0.75 – mΩ 1) TJ = 25°C VS ≥ 3.1 V PRQ-78 On-state resistance in forward condition, low battery voltage RDS(ON) – 1.2 4 mΩ TJ = 150°C VS ≥ 3.1 V PRQ-77 On-state resistance in inverse condition RDS(INV) – 0.6 – mΩ 1) TJ = 25°C PRQ-328 On-state resistance in inverse condition RDS(INV) – 0.85 1.1 mΩ TJ = 150°C PRQ-331 Nominal load current IL(NOM) 57 65 – A 1) TA = 85°C, TJ ≤ 150°C, RthJA(2S2P) PRQ-81 Drain to source smart clamp voltage VDS(CL) = VS - VOUT VDS(CL) 35 – – V IL = 10 mA PRQ-82 Drain to source smart clamp voltage VDS(CL) = VS - VOUT after short circuit detection VDS(CL_SC) 28.5 – – V After activation of the short circuit protection (IL > ICL(0)) PRQ-316 Fast turn off detection voltage VDS(FAST_OFF) 19 22 25 V – PRQ-165 Body diode forward voltage VF – 0.6 0.8 V IL = -40 A TJ = 150°C PRQ-83 Output leakage current IOUT(OFF) – 1 3 µA VS = 18 V VOUT = 0 V VIN = 0 V VDEN = 0 V TJ ≤ 85°C ( 10ms after VIN = 0V ) PRQ-84 Output leakage current IOUT(OFF) – 35 100 µA VS = 18 V VOUT = 0 V VIN = 0 V VDEN = 0 V TJ ≤ 150°C ( 10ms after VIN = 0V ) PRQ-166 (table continues...) BTS50005-1LUA Datasheet Datasheet 26 Rev. 1.10 2023-04-18

Table 6 (continued) Electrical characteristics table VS =5.8 V to 18 V, TJ = -40°C to +150°C unless otherwise specified. For a given temperature or voltage range, typical values are specified at VS = 13.5 V, TJ = 25°C. Parameter Symbol Values Unit Note or condition P-Number Min. Typ. Max. Turn on slew rate VOUT = 25% to 50% VS dVON/dt 0.15 0.3 0.6 V/µs RL = 0.32 Ω VS = 13.5 V PRQ-86 Turn off slew rate VOUT = 50% to 25% VS -dVOFF/dt 0.15 0.3 0.6 V/µs RL = 0.32 Ω VS = 13.5 V PRQ-87 Rising time during turn on VOUT from 20% to 80% of VS tr 15 40 90 µs RL = 0.32 Ω VS = 13.5 V PRQ-88 Falling time during turn off VOUT from 80% to 20% of VS tf 15 30 60 µs RL = 0.32 Ω VS = 13.5 V PRQ-89 Turn on time to VOUT = 20% of VS tON(DELAY) 17.5 45 105 µs RL = 0.32 Ω VS = 13.5 V PRQ-90 Turn off time to VOUT = 80% of VS tOFF(DELAY) 40 100 160 µs RL = 0.32 Ω VS = 13.5 V PRQ-91 Turn on time to VOUT = 80% of VS tON 35 85 190 µs RL = 0.32 Ω VS = 13.5 V PRQ-339 Turn off time to VOUT = 20% of VS tOFF 55 130 220 µs RL = 0.32 Ω VS ≤ 13.5 V PRQ-342 Switch on energy EON – 9.5 – mJ 1) RL = 0.32 Ω VS = 13.5 V PRQ-92 Switch off energy EOFF – 5.5 – mJ 1) RL = 0.32 Ω VS = 13.5 V PRQ-93 VS pin Power supply undervoltage shutdown VS(UVL) 2.3 2.7 3.1 V VS decreasing PRQ-184 Power supply undervoltage turn on VS(UVH) 4 4.8 5.8 V VS increasing PRQ-185 Input pin High level input voltage VIN(H) – – 2.5 V – PRQ-171 Low level input voltage VIN(L) 0.5 – – V – PRQ-170 Input voltage hysteresis VIN(HYS) – 0.2 – V – PRQ-94 Input pull-down resistor RIN(PULL_DOWN) 100 200 – kΩ – PRQ-95 DEN pin High level DEN voltage VDEN(H) – – 2.5 V – PRQ-172 (table continues...) BTS50005-1LUA Datasheet Datasheet 27 Rev. 1.10 2023-04-18

Table 6 (continued) Electrical characteristics table VS =5.8 V to 18 V, TJ = -40°C to +150°C unless otherwise specified. For a given temperature or voltage range, typical values are specified at VS = 13.5 V, TJ = 25°C. Parameter Symbol Values Unit Note or condition P-Number Min. Typ. Max. Low level DEN voltage VDEN(L) 0.5 – – V – PRQ-304 DEN voltage hysteresis VDEN(HYS) – 0.2 – V – PRQ-303 DEN pull-down resistor RDEN(PULL_DOWN) 100 200 – kΩ – PRQ-183 Protection: reverse polarity On-state resistance in reverse polarity RDS(REV) – 0.7 1.4 mΩ -18 V ≤ VS ≤ -8 V TJ ≤ 150°C PRQ-96 Protection: overload Current trip detection level ICL(0) 150 215 275 A TJ = -40°C PRQ-362 Current trip detection level ICL(0) 150 210 265 A 1) TJ = 25°C PRQ-97 Current trip detection level ICL(0) 150 200 250 A TJ = 150°C PRQ-370 Current trip detection level at low voltage ICL(0_UV) 35 200 300 A 3.1 V ≤ VS ≤ 5.8 V PRQ-98 Current trip maximum level ICL(1) 150 220 285 A dIL/dt = 1 A/µs TJ = -40°C PRQ-364 Current trip maximum level ICL(1) 150 215 275 A 1) dIL/dt = 1 A/µs TJ = 25°C PRQ-99 Current trip maximum level ICL(1) 150 205 260 A dIL/dt = 1 A/µs TJ = 150°C PRQ-365 Overload shutdown delay time tOFF(TRIP) – 7 15 µs – PRQ-100 Thermal shutdown temperature TJ(TRIP) 150 175 200 °C 1) 3.1 V ≤ VS ≤ 28 V PRQ-101 Overpower shutdown detection level VDS(PSD) 700 850 1000 mV 1) PRQ-102 Overpower shutdown activation level VS(PSD) 3.5 4.3 5.3 V 1) PRQ-103 Overpower shutdown time tPSD(UV) 10 – 300 µs Time defined from VS ≤ VS(PSD) and VDS ≥ VDS(PSD) until IIS = IIS(FAUL T) PRQ-104 Diagnosis function: sense pin Current sense differential ratio dkILIS 43000 50000 58000 – IL0 max ≤ IL ≤ ICL(0) min VS - VIS ≥ 3.5 V PRQ-106 (table continues...) BTS50005-1LUA Datasheet Datasheet 28 Rev. 1.10 2023-04-18

Table 6 (continued) Electrical characteristics table VS =5.8 V to 18 V, TJ = -40°C to +150°C unless otherwise specified. For a given temperature or voltage range, typical values are specified at VS = 13.5 V, TJ = 25°C. Parameter Symbol Values Unit Note or condition P-Number Min. Typ. Max. Calculated sense offset load current IS= 0 A IL0 -300 0 300 mA VS - VIS ≥ 3.5 V TJ = -40°C PRQ-107 Calculated sense offset load current IS= 0 A IL0 -275 0 275 mA 1) VS - VIS ≥ 3.5 V TJ = 25°C PRQ-245 Calculated sense offset load current IS= 0 A IL0 -250 0 250 mA VS - VIS ≥ 3.5 V TJ = 150°C PRQ-246 Calculated sense offset current IL = 0 A IIS0 -5.17 0 6.98 µA 1) VS - VIS ≥ 3.5 V TJ = -40°C PRQ-108 Calculated sense offset current IL = 0 A IIS0 -4.74 0 6.40 µA 1) VS - VIS ≥ 3.5 V TJ = 25°C PRQ-248 Calculated sense offset current IL = 0 A IIS0 -4.31 0 5.81 µA 1) VS - VIS ≥ 3.5 V TJ = 150°C PRQ-169 Current sense ratio spread over temperature and repetitive pulse operation ∆(dkILIS(CAL)) -5 0 +5 % 1) PRQ-111 Diagnosis function in normal condition Current sense settling time until 90% and 110% of IIS stable after turn on tsIS(IN_ON) – 400 700 µs VS - VIS ≥ 3.5 V RL = 0.32 Ω PRQ-112 Current sense settling time to IIS stable after turn on tsIS(IN_ON) – 1000 1500 µs VS - VIS ≥ 3.5 V RL = 0.32 Ω PRQ-288 Current sense settling time to IIS stable after activation of DEN tsIS(DEN_ON) – 40 85 µs VS - VIS ≥ 3.5 V PRQ-177 Current sense disable time tsIS(DEN_OFF) – 5 25 µs From DEN falling edge to IIS = IIS(OFF) PRQ-178 Current sense settling time after load change tsIS(LC) – 40 – µs 1) VS - VIS ≥ 3.5 V IL ≥ IL0(MAX) PRQ-114 IIS leakage current when DEN is disabled IIS(OFF) – – 1 µA VDEN < VDEN(L) RIS = 1 kΩ; TJ ≤ 150°C PRQ-113 Diagnosis function in overload condition Sense signal current in fault condition IIS(FAUL T) 4 13 20 mA VS - VIS ≥ 3.5 V Typ value: VS - VIS ≥ 8 V PRQ-105 (table continues...) BTS50005-1LUA Datasheet Datasheet 29 Rev. 1.10 2023-04-18

Table 6 (continued) Electrical characteristics table VS =5.8 V to 18 V, TJ = -40°C to +150°C unless otherwise specified. For a given temperature or voltage range, typical values are specified at VS = 13.5 V, TJ = 25°C. Parameter Symbol Values Unit Note or condition P-Number Min. Typ. Max. Fault propagation time for short circuit detection tpIS(FAUL T_OC) – 3 30 µs – PRQ-115 Fault propagation time for overtemperature detection tpIS(FAUL T_OT) – 1.5 2.5 ms 1) PRQ-116 Delay time to reset fault pin after turning off VIN tIN(RESETDELAY) 6 – 5000 µs – PRQ-117 Diagnosis function open load off Open load detection threshold in off state voltage control VOUT(OL_OFF) 2 3 4 V VIN<VIN(L) and VDEN > VDEN(H) PRQ-174 Fault propagation time for open load detection off during turn off tpFAUL T_OL(IN_OFF) – 10 30 µs From falling edge on VIN to IS(FAUL T) on IS pin VDEN > VDEN(H) VOUT > VOUT(OL_OFF) PRQ-179 Fault propagation time for open load detection off after activation of DEN tpFAUL T_OL(DEN_O – 5 30 µs From rising edge on VDEN to IIS(FAUL T) on IS pin VIN < VIN(L) VOUT > VOUT(OL_OFF) PRQ-180 Disable time of IIS(FAUL T) in off condition after desactivation of DEN tpFAUL T_OL(DEN_O FF) – 5 40 µs From falling edge on VDEN to IIS(OFF) on IS pin VIN < VIN(L) PRQ-181 1) Not subject to production test, specified by design. BTS50005-1LUA Datasheet Datasheet 30 Rev. 1.10 2023-04-18

6 Typical performance characteristics

Standby current for whole device with load, IVS(OFF) = f(VS, TJ) Standby current for whole device with load, IVS(OFF) = f(TJ), at VS = 13.5 V GND current when IN and DEN are biased to VS, IGND(ON) = f(VS, TJ) GND current when IN and DEN are biased to 5.5 V, IGND(ON) = f(VS, TJ) 0.0 5.0 10.0 15.0 20.0 25.0 30.0 35.0 40.0 45.0 0 5 10 15 20 25 30 IVS(OFF)[µA] VS[V] -40°C 25°C 150°C 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 5 10 15 20 25 30 IGND(ON)[mA] VS[V] -40°C 25°C 150°C 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 5 10 15 20 25 30 IGND(ON)[mA] VS[V] -40°C 25°C 150°C 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0 -40-200 20406080100120140160 IVS(OFF)[µA] TJ[°C] Vs=13,5V Figure 27 Typical performance characteristics BTS50005-1LUA Datasheet Datasheet 31 Rev. 1.10 2023-04-18

ON state resistance at IL = 65 A RDS(ON) = f(VS, TJ) ON state resistance at IL = 65 A and VS = 13.5 V RDS(ON) = f(TJ) Turn ON time tON = f(VS, TJ), RL = 0.32 Ω Turn OFF time tON = f(VS, TJ), RL = 0.32 Ω 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.1 1.2 0 5 10 15 20 25 30 RDS(ON)[mΩ ] VS[V] -40°C 25°C 150°C 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 -40-200 20406080100120140160 RDS(ON)[mΩ ] TJ[°C] Vs=13,5V 100 150 200 250 0 5 10 15 20 25 30 tON[µs] VS[V] -40°C 25°C 150°C 100 150 200 250 0 5 10 15 20 25 30 tOFF[µs] VS[V] -40°C 25°C 150°C Figure 28 Typical performance characteristics (continued) BTS50005-1LUA Datasheet Datasheet 32 Rev. 1.10 2023-04-18

dVON/dt = f(VS, TJ), RL = 0.32 Ω Slew rate at turn OFF -dVOFF/dt = f(VS, TJ), RL = 0.32 Ω Energy at turn ON EON = f(VS, TJ), RL = 0.32 Ω Energy at turn OFF EOFF = f(VS, TJ), RL = 0.32 Ω 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0 5 10 15 20 25 30 dVON/dt [V/µs] VS[V] -40°C 25°C 150°C 0.0 5.0 10.0 15.0 20.0 25.0 30.0 35.0 40.0 5 10 15 20 25 30 35 EON[mJ] VS[V] -40°C 25°C 150°C 0.0 5.0 10.0 15.0 20.0 25.0 30.0 35.0 40.0 5 10 15 20 25 30 35 EOFF[mJ] VS[V] -40°C 25°C 150°C 0.2 0.4 0.6 0.8 1.2 1.4 1.6 1.8 0 5 10 15 20 25 30 -dVOFF/dt [V/µs] VS[V] -40°C 25°C 150°C Figure 29 Typical performance characteristics (continued) BTS50005-1LUA Datasheet Datasheet 33 Rev. 1.10 2023-04-18

-40-200 20406080100120140160 dkILIS[k] TJ[°C] Drain to source smart clamp voltage VDS(CL) = f( TJ) ON resistance in inverse at IL = -50 A RDS(INV) = f( VS) Voltage on IS in fault VIS = f( VS, TJ), RIS = 1.0 k Ω Current sense differential ratio dkILIS = f( TJ) 35.0 36.0 37.0 38.0 39.0 40.0 41.0 42.0 -40-200 20406080100120140160 VDS(CL) [V] TJ[°C] 0.2 0.4 0.6 0.8 1.0 1.2 0 5 10 15 20 25 30 RDS(INV)[mΩ ] VS[V] -40°C 25°C 150°C 0 5 10 15 20 25 30 vIS[V] VS[V] -40°C 25°C 150°C Figure 30 Typical performance characteristics (continued) BTS50005-1LUA Datasheet Datasheet 34 Rev. 1.10 2023-04-18

Thermal shutdown temperature TJ(TRIP) = f(VS) Current trip detection level ICL(0) = f(VS, TJ) 150 155 160 165 170 175 180 185 190 195 200 0 5 10 15 20 25 30 TJ(trip)[°C] VS[V] 150 160 170 180 190 200 210 220 230 240 250 0 5 10 15 20 25 30 ICL(0)[A] VS[V] -40°C 25°C 150°C Figure 31 Typical performance characteristics (continued) BTS50005-1LUA Datasheet Datasheet 35 Rev. 1.10 2023-04-18

7 Application information

Note: The following information is given as a hint for the implementation of the device only and shall not be regarded as a description or warranty of a certain functionality, condition or quality of the device. This is a very simplified example of an application circuit. The function must be verified in the real application. Microcontroller VDD GPIO VSS VS IN DEN IS GND OUT C vs Logic supply T 1 Optional C OUTC SENSE R IN R DEN R IS_PROT R IS R OL Control Protection Diagnosis R/ L cable R/ L cable GPIO A/D IN RLOAD VBAT C IS Conditional Figure 32 Application diagram: device controlled by a microcontroller Table 7 Bill of material Reference Value Purpose RIN 4.7 kΩ Protection of the microcontroller during reverse polarity RDEN 4.7 kΩ Protection of the microcontroller during reverse polarity RIS 1 kΩ Sense resistor RIS_PROT 4.7 kΩ Protection of the microcontroller during reverse polarity and during loss of ground CSENSE 10 nF Sense signal filtering CVS 100 nF Improved EMC behavior COUT 10 nF Protection against EMC The value depends on the leakage outside the ECU between OUT and GND CIS 1 nF Conditional: connect if RIS is bigger than 2 kΩ BTS50005-1LUA Datasheet Datasheet 36 Rev. 1.10 2023-04-18

Figure 33 Application diagram: solid state relay for direct relay replacement Table 8 Bill of material Reference Value Purpose RIS 1 kΩ Sense resistor CVS 100 nF Improved EMC behavior COUT 10 nF Protection against EMC T Bipolar or MOSFET Switch to turn on and off the device D – Enable Reverse ON protection during reverse battery. Not required if a MOSFET is used for T BTS50005-1LUA Datasheet Datasheet 37 Rev. 1.10 2023-04-18

8 Package information

Figure 34 PG-HSOF-8 (8-pin TO-Leadless) package dimensions Green Product (RoHS compliant) To meet the world-wide customer requirements for environmentally friendly products and to be compliant with government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e. Pb-free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020). BTS50005-1LUA Datasheet Datasheet 38 Rev. 1.10 2023-04-18

9 Revision history

1.00 2022-12-02 Datasheet released 1.01 2023-01-23 Footnote "Not subject to production test, specified by design" added where it was missing. 1.10 2023-04-18 - Footnote "Not subject to production test, specified by design" added to the PRQ-102, PRQ-103, PRQ-116. - IOUT, IDS and ILOAD replaced by IL as defined in the Figure 4 - Note added at the end of the Chapter 4.1 - Minor editorial changes BTS50005-1LUA Datasheet Datasheet 39 Rev. 1.10 2023-04-18

All referenced product or service names and trademarks are the property of their respective owners. Edition 2023-04-18 Published by Infineon Technologies AG

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© 2023 Infineon Technologies AG All Rights Reserved. Do you have a question about any aspect of this document? Email: erratum@infineon.com Document reference IFX-qom1622555714287 Important notice The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. Warnings Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.