BTS436L2

BTS436L2 INFINEON | Alldatasheet

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Technical content

Semiconductor Group Page 1 of 12 2003-Oct-01 Smart High-Side Power Switch One Channel: 38mΩ Status Feedback Product Summary Package On-state Resistance R ON 38m Ω Operating Voltage V bb(on) 4.75...41V Nominal load current I L(NOM) 9.8A Current limitation I L(SCr) 40A General Description

• N channel vertical power MOSFET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology.
• Providing embedded protective functions

Applications

• µC compatible high-side power switch with diagnostic feedback for 5V, 12V and 24V grounded loads
• All types of resistive, inductive and capacitve loads
• Most suitable for loads with high inrush currents, so as lamps
• Replaces electromechanical relays, fuses and discrete circuits Basic Functions
• Very low standby current
• CMOS compatible input
• Fast demagnetization of inductive loads
• Stable behaviour at undervoltage
• Wide operating voltage range
• Logic ground independent from load ground Protection Functions
• Short circuit protection
• Overload protection
• Current limitation
• Thermal shutdown
• Overvoltage protection (including load dump) with external resistor
• Reverse battery protection with external resistor
• Loss of ground and loss of V bb protection
• Electrostatic discharge protection (ESD) Diagnostic Function
• Diagnostic feedback with open drain output
• Open load detection in ON-state
• Feedback of thermal shutdown in ON-state TO 220-5-11 TO-263-5-2 TO-220-5-12 Standard SMD Straight Block Diagram Vbb Logic with protection functions IN ST GND Load PROFET OUT

Semiconductor Group Page 2 2003-Oct-01 Functional diagram Pin Definitions and Functions Pin Symbol Function

1 GND Logic ground

2 IN Input, activates the power switch in

case of logical high signal

3 V bb Positive power supply voltage

The tab is shorted to pin 3

4 ST Diagnostic feedback, low on failure

5 OUT Output to the load

Tab V bb Positive power supply voltage The tab is shorted to pin 3 Pin configuration (top view) Tab = VBB 1 2 (3) 4 5 GND IN ST OUT OUT GND overvoltage protection logic internal voltage supply ESD temperature sensor clamp for inductive load gate control charge pump current limit Open load detection ST VBB LOAD IN PROFET

Semiconductor Group Page 3 2003-Oct-01 Maximum Ratings at Tj = 25 °C unless otherwise specified Parameter Symbol Values Unit Supply voltage (overvoltage protection see page 4) Vbb 43 V Supply voltage for full short circuit protection Tj Start=-40 ...+150°C Vbb 24 V Load dump protection1) VLoadDump = VA + Vs, VA = 13.5 V RI 2)= 2 Ω , RL= 4.0 Ω , td= 200 ms, IN= low or high VLoad dump 3 60 V Load current (Current limit, see page 5) IL self-limited A Operating temperature range Storage temperature range Tj Tstg -40 ...+150 -55 ...+150 Power dissipation (DC), TC ≤ 25 °C Ptot 75 W Maximal switchable inductance, single pulse Vbb = 12V, Tj,start = 150°C, TC = 150°C const. (See diagram on page 8) IL(ISO) = 9.8 A, RL = 0 Ω , E4)AS=0.33J: Z L 5.0 mH Electrostatic discharge capability (ESD) IN: (Human Body Model) ST: out to all other pins shorted: acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993; R=1.5kΩ ; C=100pF VESD 1.0 4.0 8.0 kV Input voltage (DC) VIN -10 ... +16 V Current through input pin (DC) Current through status pin (DC) see internal circuit diagrams page 7 IIN IST ±2.0 ±5.0 mA Thermal Characteristics Parameter and Conditions Symbol Values Unit min typ max Thermal resistance chip - case: junction - ambient (free air): device on pcb5): RthJC RthJA 1.75 K/W 1) Supply voltages higher than V bb(AZ) require an external current limit for the GND and status pins (a 150Ω resistor for the GND connection is recommended). 2) RI = internal resistance of the load dump test pulse generator 3) VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 4) E AS is the maximum inductive switch-off energy 5) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm 2 (one layer, 70µm thick) copper area for Vbb connection. PCB is vertical without blown air.

Semiconductor Group Page 4 2003-Oct-01

Electrical Characteristics

Parameter and Conditions Symbol Values Unit at Tj =-40...+150°C, Vbb = 12 V unless otherwise specified min typ max Load Switching Capabilities and Characteristics On-state resistance (pin 3 to 5) IL = 2 A; VBB ≥ 7V Tj=25 °C: Tj=150 °C: see diagram, page 9 RON mΩ Nominal load current, (pin 3 to 5) ISO 10483-1, 6.7:VON=0.5V, TC=85°C IL(ISO) 8.8 9.8 -- A Output current (pin 5) while GND disconnected or GND pulled up6), Vbb=30 V, VIN= 0, see diagram page 7 IL(GNDhigh) -- -- 2 mA Turn-on time IN to 90% VOUT: Turn-off time IN to 10% VOUT: RL = 12 Ω , ton toff 100 120 200 250 µs Slew rate on 10 to 30% VOUT, RL = 12 Ω , dV /dton 0.1 -- 1 V/ µs Slew rate off 70 to 40% VOUT, RL = 12 Ω , -dV/dtoff 0.1 -- 1 V/ µs Operating Parameters Operating voltage Tj =-40 Tj =+25...+150°C: Vbb(on) 4.75 -- V Overvoltage protection7) Tj =-40°C: Ibb=40 mA Tj =25...+150°C: Vbb(AZ) 41 V Standby current (pin 3) 8) T j=-40...+25°C: VIN=0; see diagram on page 9 T j= 150°C: Ibb(off) -- µA Off-State output current (included in Ibb(off)) VIN=0 IL(off) -- 1 10 µA Operating current 9), VIN=5 V IGND -- 0.8 1.4 mA 6) not subject to production test, specified by design 7) Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins (a 150Ω resistor for the GND connection is recommended. See also VON(CL) in table of protection functions and circuit diagram page 7. 8) Measured with load 9) Add IST, if IST > 0, add IIN, if VIN>5.5 V

Semiconductor Group Page 5 2003-Oct-01 Parameter and Conditions Symbol Values Unit at Tj =-40...+150°C, Vbb = 12 V unless otherwise specified min typ max Protection Functions10) Current limit (pin 3 to 5) IL(lim) (see timing diagrams on page 11) Tj =-40°C: Tj =25°C: Tj =+150°C: A Repetitive short circuit shutdown current limit IL(SCr) Tj = Tjt (see timing diagrams, page 11) -- 40 -- A Thermal shutdown time11) Tj,start = 25°C: (see timing diagrams on page 11) toff(SC) -- 1.9 -- ms Output clamp (inductive load switch off) at VOUT = Vbb - VON(CL) IL= 40 mA: VON(CL) 47 52 V Thermal overload trip temperature Tjt 150 -- -- °C Thermal hysteresis ∆Tjt -- 10 -- K Reverse battery (pin 3 to 1) 12) - Vbb -- -- 32 V Reverse battery voltage drop (Vout > Vbb)13 ) IL = -2 A Tj=150 °C: -VON(rev) 600 -- mV Diagnostic Characteristics Open load detection current (on-condition) IL (OL) 100 -- 900 mA Input and Status Feedback14) Input resistance see circuit page 7 RI 2.5 3.5 6 kΩ Input turn-on threshold voltage VIN(T+) 1.7 -- 3.2 V Input turn-off threshold voltage VIN(T-) 1.5 -- -- V Input threshold hysteresis ∆ VIN(T) -- 0.5 -- V Off state input current (pin 2), VIN = 0.4 V IIN(off) 1 -- 50 µA On state input current (pin 2), VIN = 5 V IIN(on) 20 50 90 µA Delay time for status with open load after switch off (see timing diagrams on page 11) td(ST OL4) 100 520 900 µs Status output (open drain) Zener limit voltage I ST = +1.6 mA: ST low voltage IST = +1.6 mA: VST(high) VST(low) 5.4 6.1 0.4 V 10) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation. 11) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm 2 (one layer, 70µm thick) copper area for Vbb connection. PCB is vertical without blown air. 12) Requires 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature protection is not active during reverse current operation! Input and Status currents have to be limited (see max. ratings page 3 and circuit page 7). 13) not subject to production test, specified by design 14) If a ground resistor RGND is used, add the voltage drop across this resistor.

Semiconductor Group Page 6 2003-Oct-01 Truth Table Input Output Status level level BTS 436L2 Normal operation L H L H H H Open load L H Z H H L Overtem- perature L H L L H L L = "Low" Level X = don't care Z = high impedance, potential depends on external circuit H = "High" Level Status signal after the time delay shown in the diagrams (see fig 5. page 11)

Semiconductor Group Page 7 2003-Oct-01 Terms PROFET V IN ST OUT GND bb VSTV IN IST IIN Vbb Ibb IL VOUTIGND VON R GND Input circuit (ESD protection) IN GND IR ESD-ZD III The use of ESD zener diodes as voltage clamp at DC conditions is not recommended Status output ST GND ESD- ZD +5V RST(ON) ESD-Zener diode: 6.1 V typ., max 5.0 mA; RST(ON) < 375 Ω at 1.6 mA. The use of ESD zener diodes as voltage clamp at DC conditions is not recommended. Inductive and overvoltage output clamp + Vbb OUT GND PROFET VZ VON VON clamped to 47 V typ. Overvolt. and reverse batt. protection + Vbb IN ST STR GND GNDR Signal GND Logic PRO FET VZ2 IR VZ1 Load GND LoadR OUT STR + 5V VZ1 = 6.1 V typ., VZ2 = 47 V typ., RGND = 150 Ω , RST= 15 kΩ , RI= 3.5 kΩ typ. In case of reverse battery the load current has to be limited by the load. Temperature protection is not active Open-load detection in on-state Open load, if VON < RON·IL(OL); IN high Open load detection Logic unit + Vbb OUT ON VON GND disconnect PROFET V IN ST OUT GND bb Vbb 1 VIN VST VGND Any kind of load. In case of Input=high is VOUT ≈ VIN - VIN(T+) . Due to VGND >0, no VST = low signal available.

Semiconductor Group Page 8 2003-Oct-01 GND disconnect with GND pull up PROFET V IN ST OUT GND bb Vbb VGND VIN VST Any kind of load. If VGND > VIN - VIN(T+) device stays off Due to VGND >0, no VST = low signal available. Vbb disconnect with energized inductive load PROFET V IN ST OUT GND bb Vbb high For inductive load currents up to the limits defined by Z L (max. ratings and diagram on page 8) each switch is protected against loss of Vbb. Consider at your PCB layout that in the case of Vbb dis- connection with energized inductive load all the load current flows through the GND connection. Inductive Load switch-off energy dissipation PROFET V IN ST OUT GND bb E E E EAS bb L R ELoad L RL{Z L Energy stored in load inductance: EL = 1/2·L·I2 L While demagnetizing load inductance, the energy dissipated in PROFET is EAS= Ebb + EL - ER= VON(CL)·iL(t) dt, with an approximate solution for RL > 0 Ω : EAS= IL· L 2·RL

• (Vbb + |VOUT(CL)|)· ln (1+ IL·RL |VOUT(CL)| ) Maximum allowable load inductance for a single switch off L = f (IL ); Tj,start = 150°C,TC = 150°C const., Vbb = 12 V, RL = 0 Ω ZL [mH] 100 1000 02 461 0 1 2 14 16 18 0.1 IL [A]

Semiconductor Group Page 9 2003-Oct-01 Typ. on-state resistance RON = f (Vbb,Tj ); IL = 2 A, IN = high RON [mΩ ] 3 5 7 9 30 40 Tj = 150°C 25°C -40°C V bb [V] Typ. standby current Ibb(off) = f (Tj ); Vbb = 9...34 V, IN1,2 = low Ibb(off) [µA] -50 0 50 100 150 200 T j [°C]

Semiconductor Group Page 12 2003-Oct-01 Package and Ordering Code All dimensions in mm Standard (=staggered): P-TO220-5-11 Sales code BTS436L2 Ordering code: Q67060-S6111-A2 SMD: P-TO263-5-2 (tape&reel) Sales code BTS436L2 G Ordering code: T&R Q67060-S6111-A3 Straight: P-TO220-5-12 Sales code BTS436L2 S Ordering code: Q67060-S6111-A4 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81669 München © Infineon Technologies AG 2001 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life- support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. A 8˚ max. BA0.25 M 0.1 Typical 9.8±0.15 ±0.210 8.51) 81) (15) ±0.29.25 ±0.31 0...0.15 5x0.8±0.1 ±0.11.27 4.4 B 0.5±0.1 ±0.32.7 4.7±0.5 0.05 0.1 All metal surfaces tin plated, except area of cut. ±0.31.3 2.4 4x1.7 A A0.25 M Typical 9.8±0.15 2.8 15.65±0.3 13.4 0...0.15 1.7 0.8±0.1 ±0.11.27 4.4 9.25±0.20.05 All metal surfaces tin plated, except area of cut. C ±0.2 17±0.3 8.51) 10±0.2 3.7-0.15 C 2.4 0.5±0.1 ±0.38.6 10.2±0.3 ±0.43.9 ±0.48.4 3.7±0.3 A BA0.25 M Typical 9.8±0.15 2.8 15.65±0.3 13.4 0...0.15 1.7 0.8±0.1 ±0.11.27 4.4 B 9.25±0.20.05 1) All metal surfaces tin plated, except area of cut. C ±0.2 17±0.3 8.51) 10±0.2 3.7-0.15 C 2.4 0.5±0.1 13 ±0.5 ±0.511