BTS432D SIEMENS | Alldatasheet
Document overview
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Technical content
© High-side switch —_— © Short-circuit protection @ Overtemperature protection g @ Overload protection - @ Load dump protection up to 80 V Qy AES s @ Undervoltage and overvoltage shutdown f° with auto-restart and hysteresis PPRS, @ Reverse battery protection GA © Input protection © Inductive load generated negative ~ —— voltage transient limit to typ. -10 V @ Broken inductive load protection @ Open-load detection in on-condition @ Max. current internally limited © Status output © FR... constant versus Vio © Electrostatic discharge (ESD) protection @ Version E: Overtemperature shutdown with auto-restart Type Ordering code BTS 432D C67078-S5303-A3, BTS 432 ©67078-S5303-A4 BTS 432F C67078-S5303-A5 Maximum Ratings Active overvoltage protection v Short-circuit current self-limited Operating and storage T =55... +150 °c temperature range Toto Thermal resistance Kw Chip-case Rin sc 1.0 Chip - ambient Rusa | 75 642
Electrical Characteristics
at T, = 25 °C, unless otherwise specified. Parameter ‘Symbol | Values | Unit [ea [eae] On-state resistance (pin 3 to 5) Ron mQ Voo = 12 V, = 2A - | 35 Operating voltage (pin 3 to 1) Veo v Nominal current, calculated value (pin 5 to 1) | f-ISO | A ISO-proposal: Vjx—Vou <0.5 V, Te = 85 °C - - _|9 Load current, theoretical value (pin 5 to 1) 1.-MOS. | MOS-standard: Tz = 25 °C, T, = 150 °C - |- | 20 Load current limit (pin 5 to 1) Titi | active regulation starts ets 432 DE | 40 | - when Voo-Vou > 1 V BTS 432 F 7 - Standby current (pin 3 to 1), Von = 12 V Tn [- [10 (50 | HA Short-circuit detection voltage, Vsc = Veo- Vou _| Vsc [- |e (- lv Open-load detection current [Tou |= | 300 | 750 | ma Input voltage, (pin 2 to 1) Vy = 12 V | Vincotn ee (| Vv y, - je Max. input current ingons Input current (pin 2 to 1) WA Vinjot = 0.4 V Favor 1 - 30 Vinjon = 2-5 V Faron 10 | - 70 Trip temperature Tr °c automatic tripping when T, > 150 °C 150 }- | - _ Turn-on time ton so |- | 300 | us ‘Turn-off time | tor 10 | - 60 Voy = 12 V, 90% Vou ML = 1A, 10% Vout Switching edge on av/at,, | - - |2) | wus Switching edge off | dv/dtoy | - - |4 Voy = 12 V, 10...30% Vous Status (CMOS) Vor nom | 44 |- [65 ) Vv BTS 432D, Ig) = 50 uA to GND. Ver om |- [7 | O4 Status valid > 300 1s after switching edge _ Max. status current Tex = = 15.0 [ma BTS 432D, Is, = 50 uA to GND. Status valid > 300 us after switching edge |_| _ Siemens Aktiengeselischaft 643
at T, = 25 °C, unless otherwise specified [min [wp [mex] Status (open drain) Vs inion 66 |v BTS 432 E/F, I, = 50 UA to Vip. Vst dows 0.4 Status valid > 300 us after switching edge Max. status current Ts. 5.0 | mA BTS 432 E/F, Ia, = 50 UA to Vip. Status valid > 300 us after switching edge Inductive load switch-off energy dissipation J 7, =150 °C Wao ‘Truth Table L = “Low” level Input Status | Output H = “High” level voltage version E, F | voltage Normal operation L H L , H H H Open load L H H H’) H L L LH Short-circuit L H H L H L L L Overtemperature L L L L H L L ue Undervoltage L L H fe H L H L Overvoltage L L H L H L H L Options Overview Version D Version E Version F Load current limit High level | High level Low level Status cmos Open drain Open drain Overtemperature Latch Restart on Latch shutdown function”) cooling function?) Under- and overvoltage Yes No No status feedback 1) Power transistor off 2) For Vin > 9 V Siemens Aktiengeselischaft 644
Operating Range (typ.) bE TT] a a a o 4 46 56 65
1 Undervoltage sensor causes the device to switch off
2 Normal operation
3 Reduction of load current limit to reduce the short-circuit power dissipation of the
4 Overvoltage sensor causes the device to switch off
5 Increase of current between pin 3 and 1 from Zener diode to protect the circuit
against overvoltage spikes
6 Power transistor begins to turn on to protect itself against overvoltage spikes
Interference Immunity” in acc. with DIN 40839, part 1 (12 V supply voltage) —_Test pulse 5: load dump Test pulse | Interference v levels {om --- 1 tyufmjpw fl Bg — _ Vp
27 TalalAala AM a “ot
ab aAlalala Parameters: Vs = 80 V (level 3) 4 [alajala V, =13.5V a alTATA TB R,=05..49 - t, = 40...400 ms t,=0.1...10 ms Class A: All functions of the device are perfor- Tong (Pin 5 to 1) = I,-1SO (see page 172) med as designed after exposure to Note: disturbance. The conditions are related to each other in that the high setting values of Ve, &, and f. Class B: One or more functions of the device belong together as do respectively the low are not performed as designed after values. exposure and cannot be returned to proper operation without replacing the device. 1} For detailed intormation reter to chapter Technical Information (DIN 40839: Electromagnetic compatibility (EMC) in motor vehicles: correlation with ISO-Technical Report 7637/0 and 7637/1) Siemens Aktiengesellschatt 645
Applications
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