BTS432I2 INFINEON | Alldatasheet

Document overview

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Technical content

Features

  • Load dump and reverse battery protection1)
  • Clamp of negative voltage at output
  • Short-circuit protection
  • Current limitation
  • Thermal shutdown
  • Diagnostic feedback
  • Open load detection in OFF-state
  • CMOS compatible input
  • Electrostatic discharge (ESD) protection
  • Loss of ground and loss of V bb protection2)
  • Overvoltage protection
  • Undervoltage and overvoltage shutdown with auto-restart and hysteresis Application
  • µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads
  • All types of resistive, inductive and capacitve loads
  • Replaces electromechanical relays and discrete circuits General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, integrated in Smart SIPMOS  chip on chip technology. Fully protected by embedded protection functions. + Vbb IN ST Signal GND ESD PROFET OUT GND Logic Voltage sensor Voltage source Open load detection Short circuit detection Charge pump Level shifter Temperature sensorRectifier Limit for unclamped ind. loads Gate protection Current limit Load GND Load VLogic Overvoltage protection R bb 1) No external components required, reverse load current limited by connected load. 2) Additional external diode required for charged inductive loads Product Summary VLoad dump 80 V Vbb-VOUT Avalanche Clamp 58 V Vbb (operation) 4.5 ... 42 V Vbb (reverse) -32 V RON 38 mΩ IL(SCp) 42 A IL(SCr) 33 A IL(ISO) 11 A SMD Standard

Infineon Technologies AG Page 2 1999-02-19 Pin Symbol Function

1 GND - Logic ground

2 IN I Input, activates the power switch in case of logical high signal

3 Vbb + Positive power supply voltage,

the tab is shorted to this pin

4 ST S Diagnostic feedback, low on failure

5 OUT

(Load, L) O Output to the load Maximum Ratings at Tj = 25 °C unless otherwise specified Parameter Symbol Values Unit Supply voltage (overvoltage protection see page 3) Vbb 63 V Load dump protection VLoadDump = UA + Vs, UA = 13.5 V RI= 2 Ω , RL= 1.1 Ω , td= 200 ms, IN= low or high Vs3) 66.5 V Load current (Short-circuit current, see page 4) IL self-limited A Operating temperature range Storage temperature range Tj Tstg -40 ...+150 -55 ...+150 Power dissipation (DC) Ptot 125 W Inductive load switch-off energy dissipation, single pulse Tj=150 °C: EAS 1.7 J Electrostatic discharge capability (ESD) (Human Body Model) VESD 2.0 kV Input voltage (DC) VIN -0.5 ... +6 V Current through input pin (DC) Current through status pin (DC) see internal circuit diagrams page 6... IIN IST ±5.0 ±5.0 mA Thermal resistance chip - case: junction - ambient (free air): RthJC RthJA ≤ 1 ≤ 75 K/W SMD version, device on pcb4): ≤ tbd 3) VS is setup without DUT connected to the generator per ISO 7637-1 and DIN 40839 4) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm 2 (one layer, 70µm thick) copper area for Vbb connection. PCB is vertical without blown air.

Infineon Technologies AG Page 3 1999-02-19

Electrical Characteristics

Parameter and Conditions Symbol Values Unit at Tj = 25 °C, Vbb = 12 V unless otherwise specified min typ max Load Switching Capabilities and Characteristics On-state resistance (pin 3 to 5) IL = 2 A Tj=25 °C: Tj=150 °C: RON -- 30 mΩ Nominal load current (pin 3 to 5) ISO Proposal: VON = 0.5 V, TC = 85 °C IL(ISO) 9 11 -- A Output current (pin 5) while GND disconnected or GND pulled up, VIN= 0, see diagram page 7, Tj =-40...+150°C IL(GNDhigh) -- -- 1 mA Turn-on time to 90% VOUT: Turn-off time to 10% VOUT: ton toff 160 300 µs Slew rate on 10 to 30% VOUT, RL = 12 Ω , Tj =-40...+150°C dV /dton 0.4 -- 2.5 V/µs Slew rate off 70 to 40% VOUT, RL = 12 Ω , Tj =-40...+150°C -dV/dtoff 1 -- 5 V/µs Operating Parameters Operating voltage 5) Tj =-40...+150°C: Vbb(on) 4.5 -- 42 V Undervoltage restart Tj =-40...+150°C: Vbb(u rst) -- -- 4.5 V Undervoltage restart of charge pump see diagram page 12 Tj =-40...+150°C: Vbb(ucp) -- 6.5 7.5 V Undervoltage hysteresis Δ Vbb(under) = Vbb(u rst) - Vbb(under) Δ Vbb(under) -- 0.2 -- V Overvoltage shutdown Tj =-40...+150°C: Vbb(over) 42 -- 52 V Overvoltage restart Tj =-40...+150°C: Vbb(o rst) 42 -- -- V Overvoltage hysteresis Tj =-40...+150°C: Δ Vbb(over) -- 0.2 -- V Overvoltage protection6) Tj =-40°C: Ibb=40 mA Tj =25...+150°C: Vbb(AZ) 60 -- V Standby current (pin 3) VIN=0, IST=0, Tj=-40...+25°C: Tj=150°C: Ibb(off) 110 µA Operating current (Pin 1)7), VIN=5 V IGND -- 1.1 -- mA 5) At supply voltage increase up to Vbb= 6.5 V typ without charge pump, VOUT ≈ Vbb - 2 V 6) see also VON(CL) in table of protection functions and circuit diagram page 7. Meassured without load. 7) Add IST, if IST > 0, add IIN, if VIN>5.5 V

Infineon Technologies AG Page 4 1999-02-19 Protection Functions Initial peak short circuit current limit (pin 3 to 5)8), ( max 400 µs if VON > VON(SC) ) IL(SCp) Tj =-40°C: Tj =25°C: Tj =+150°C: A Repetitive short circuit current limit IL(SCr) Tj = Tjt (see timing diagrams, page 10) 20 33 -- A Short circuit shutdown delay after input pos. slope VON > VON(SC), Tj =-40..+150°C: min value valid only, if input "low" time exceeds 30 µs td(SC) 80 -- 400 µs Output clamp (inductive load switch off) at VOUT = Vbb - VON(CL), IL= 30 mA VON(CL) -- 58 -- V Short circuit shutdown detection voltage (pin 3 to 5) VON(SC) -- 8.3 -- V Thermal overload trip temperature Tjt 150 -- -- °C Thermal hysteresis DTjt -- 10 -- K Inductive load switch-off energy dissipation9), Tj Start = 150 °C, single pulse Vbb = 12 V: Vbb = 24 V: EAS ELoad12 ELoad24 -- -- 1.7 1.3 1.0 J Reverse battery (pin 3 to 1) 10) -Vbb -- -- 32 V Integrated resistor in Vbb line Rbb -- 120 -- Ω Diagnostic Characteristics Open load detection current IL(off) 10 30 60 µA Open load detection voltage Tj=-40..150°C: VOUT(OL) 2 3 4 V ) Short circuit current limit for max. duration of 400 µs, prior to shutdown (see td(SC) page 4) 9) While demagnetizing load inductance, dissipated energy in PROFET is EAS= ò VON(CL) * iL(t) dt, approx. EAS= 1/2 * L * I2 L * ( VON(CL) VON(CL) - Vbb ), see diagram page 8 10) Reverse load current (through intrinsic drain-source diode) is normally limited by the connected load. Reverse current IGND of ≈ 0.3 A at V bb= -32 V through the logic heats up the device. Time allowed under these condition is dependent on the size of the heatsink. Reverse IGND can be reduced by an additional external GND-resistor (150 Ω ). Input and Status currents have to be limited (see max. ratings page 2 and circuit page 7).

Infineon Technologies AG Page 5 1999-02-19 Input and Status Feedback11) Input turn-on threshold voltage Tj =-40..+150°C: VIN(T+) 1.5 -- 2.4 V Input turn-off threshold voltage Tj =-40..+150°C: VIN(T-) 1.0 -- -- V Input threshold hysteresis Δ VIN(T) -- 0.5 -- V Off state input current (pin 2) VIN = 0.4 V: IIN(off) 1 -- 30 µA On state input current (pin 2) VIN = 3.5 V: IIN(on) 10 25 50 µA Delay time for status with open load after Input neg. slope (see diagram page 12) td(ST OL3) 40 -- 300 µs Status invalid after positive input slope (short circuit) Tj=-40 ... +150°C: td(ST SC) 80 200 400 µs Status output (CMOS) Tj =-40...+150°C, IST= - 50 µA: Tj =-40...+150°C, IST = +1.6 mA: Max. status current for current source (out): valid status output, current sink (in) : Tj =-40...+150°C VST(high)12) VST(low) -IST +IST13) 4.4 5.1 6.5 0.4 0.25 1.6 V mA 11) If a ground resistor RGND is used, add the voltage drop across this resistor. 12) VSt high ≈ Vbb during undervoltage shutdown 13) No current sink capability during undervoltage shutdown

Infineon Technologies AG Page 6 1999-02-19 Truth Table Input- Output Status level level 432 432 E2/F2 432 Normal operation L H L H H H H H H H Open load L H 14) H H L H L L H Short circuit to GND L H L L H L H L H L Short circuit to Vbb L H H H H H (L15)) H H (L15)) L H Overtem- perature L H L L L L L L L L Undervoltage L H L L L16) L16) H H L16) L16) Overvoltage L H L L L L H H L L L = "Low" Level H = "High" Level 14) Power Transistor off, high impedance 15) Low resistance short Vbb to output may be detected by no-load-detection 16) No current sink capability during undervoltage shutdown Terms PROFET VIN ST OUT GND bb VSTV IN IST IIN Vbb Ibb IL VOUTIGND VON R GND Input circuit (ESD protection) IN GND IR ZD ZD III1 I2 ESD- ZDI1 6.1 V typ., ESD zener diodes are not designed for continuous current Status output ST VLogic GND ESD- ZD Zener diode: 6.1 V typ., max 5 mA, V Logic 5 V typ, ESD zener diodes are not designed for continuous current Short Circuit detection Fault Condition: VON > 8.3 V typ.; IN high Short circuit detection Logic unit + Vbb OUT V ON

Infineon Technologies AG Page 7 1999-02-19 Inductive and overvoltage output clamp + Vbb OUT GND VZ VON VON clamped to 58 V typ. Overvolt. and reverse batt. protection + Vbb VOUT IN ST bbR Signal GND Logic PROFET VZ RGND GND INR STR Rbb = 120 Ω typ., VZ +Rbb*40 mA = 67 V typ., add RGND, RIN, RST for extended protection Open-load detection OFF-state diagnostic condition: VOUT > 3 V typ.; IN low Open load detection Logic unit VOUT Signal GND I L(OL) OFF GND disconnect PROFET VIN ST OUT GND bb Vbb 1 VIN VST VGND Any kind of load. In case of Input=high is VOUT ≈ VIN - VIN(T+) . Due to VGND >0, no VST = low signal available. GND disconnect with GND pull up PROFET VIN ST OUT GND bb Vbb VGND VIN VST Any kind of load. If VGND > VIN - VIN(T+) device stays off Due to VGND >0, no VST = low signal available. Vbb disconnect with charged inductive load PROFET V IN ST OUT GND bb Vbb high

Infineon Technologies AG Page 8 1999-02-19 PROFET V IN ST OUT GND bb Vbb high Inductive Load switch-off energy dissipation PROFET V IN ST OUT GND bb E E E EAS bb L R ELoad Energy dissipated in PROFET E AS = Ebb + EL - ER. ELoad < EL, EL = 1/2 * L * I2 L

Infineon Technologies AG Page 9 1999-02-19 Options Overview all versions: High-side switch, Input protection, ESD protection, load dump and reverse battery protection , protection against loss of ground Type BTS 432D2 432E2 432F2 432I2 Logic version D E F I Overtemperature protection Tj >150 °C, latch function17)18) Tj >150 °C, with auto-restart on cooling X X X X Short-circuit to GND protection switches off when VON>8.3 V typ. 17) (when first turned on after approx. 200 µs) X X X X Open load detection in OFF-state with sensing current 30 µA typ. in ON-state with sensing voltage drop across power transistor X X X X Undervoltage shutdown with auto restart X X X X Overvoltage shutdown with auto restart X X X X Status feedback for overtemperature short circuit to GND short to Vbb open load undervoltage overvoltage X X -19) X X X X X -19) X X X -19) X X X X X X X Status output type CMOS Open drain X X X X Output negative voltage transient limit (fast inductive load switch off) to Vbb - VON(CL) X X X X Load current limit high level (can handle loads with high inrush currents) medium level low level (better protection of application) X X X X 17) Latch except when Vbb -VOUT < VON(SC) after shutdown. In most cases VOUT = 0 V after shutdown (VOUT ≠ 0 V only if forced externally). So the device remains latched unless Vbb < VON(SC) (see page 4). No latch between turn on and td(SC). 18) With latch function. Reseted by a) Input low, b) Undervoltage, c) Overvoltage 19) Low resistance short Vbb to output may be detected by no-load-detection

Infineon Technologies AG Page 13 1999-02-19 Figure 7a: Overvoltage: IN V OUT t V bb ST ON(CL)V Vbb(over) Vbb(o rst)

Infineon Technologies AG Page 14 1999-02-19 Package and Ordering Code All dimensions in mm Standard TO-220AB/5 Ordering code BTS 432 I2 Q67060-S6204-A2 SMD TO-220AB/5, Opt. E3122 Ordering code BTS 432 I2 E3122A T&R: Q67060-S6204-A3

Infineon Technologies AG Page 15 1999-02-19 Published by Infineon Technologies AG Balanstraße 73, D-81541 München  Infineon Technologies AG 2002. All Rights Reserved Attention please! As far as patents or other rights of third parties are concerned, liability is only assumed for components, not for applications, processes and circuits implemented within components or assemblies. The information describes a type of component and shall not be considered as warranted characteristics. Terms of delivery and rights to change design reserved. For questions on technology, delivery and prices please contact Infineon Offices in Germany or the Infineon Companies and Representatives worldwide (see address list). Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Office. Infineon Technologies AG is an approved CECC manufacturer. Packing: Please use the recycling operators known to you. We can also help you - get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorised for such purpose! Critical components20) of Infineon Technologies AG, may only be used in life supporting devices or systems 21) with the express written approval of Infineon Technologies AG. 20) A critical component is a component used in a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 21) Life support devices or systems are intended (a) to be implanted in the human body or (b) support and/or maintain and sustain and/or protect human life. If they fail, it is reasonably to assume that the health of the user or other persons may be endangered.