BTS430K2 SIEMENS | Alldatasheet

Document overview

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  • PDF pages: 13

Technical content

Features

  • Clamp of negative voltage at output
  • Short-circuit protection
  • Current limitation
  • Thermal shutdown
  • Diagnostic feedback
  • Open load detection in ON-state
  • CMOS compatible input
  • Electrostatic D ischarge (ESD ) protection
  • Loss of ground and loss of Vbb protection1)
  • Reverse battery protection
  • Undervoltage and overvoltage shutdown with auto-restart and hysteresis Application
  • µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads
  • All types of resistive, inductive and capacitve loads
  • Replaces electromechanical relays and discrete circuits General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic fault feedback, integrated in Smart SIPMOS chip on chip technology. Fully protected by embedded protection functions. + Vbb IN ST Signal GND ESD PROFET OUT GND Logic Voltage sensor Voltage source Open circuit detection Short circuit detection Charge pump Level shifter Temperature sensorRectifier Limit for unclamped ind. loads Gate protection Current limit Load GND Load V Logic Overvoltage protection R bb 1) Additional external diode required for charged inductive loads Product Summary Vbb-VOUT Avalanche Clamp 50 V Vbb (operation) 4.5 ... 32 V Vbb (reverse) -32 V R ON 38 m Ω IL(lim) 36 A IL(ISO) 11 A

1 GND - Logic ground

2 IN I Input, activates the power switch in case of logical high signal

3V bb + Positive power supply voltage, the tab is shorted to this pin

4 ST S Diagnostic feedback, low on failure

5 OUT

(Load, L) O Output to the load Maximum Ratings at Tj = 25 °C unless otherwise specified Parameter Symbol Values Unit Supply voltage (overvoltage protection see page 3)Vbb 54 V Load current (Short-circuit current, see page 4)IL self-limited A Operating temperature range Storage temperature range Tj Tstg -40 ...+150 -55 ...+150 Power dissipation (DC) Ptot 125 W Inductive load switch-off energy dissipation EAS 1.7 J Electrostatic discharge capability (ESD) VESD 2.0 kV Input voltage (DC) VIN -10 ... +16 V Current through input pin (DC) Current through status pin (DC) see internal circuit diagrams page 6... IIN IST ±5.0 ±5.0 mA Thermal resistance chip - case: chip - ambient: R thJC R thJA ≤ 1 ≤ 75 K/W

Electrical Characteristics

Parameter and Conditions Symbol Values Unit at Tj = 25 °C, Vbb = 12 V unless otherwise specified min typ max Load Switching Capabilities and Characteristics On-state resistance (pin 3 to 5) IL = 2 A Tj=25 °C: Tj=150 °C: R ON -- 30 m Ω Nominal load current (pin 3 to 5) ISO Proposal: VON = 0.5 V, TC = 85 °C IL(ISO) 91 1 - -A Output current (pin 5) while GND disconnected or GND pulled up, see diagram page 7 IL(GNDhigh) -- -- 1 mA Turn-on time to 90% VOUT : Turn-off time to 10% VOUT : R L = 12 Ω ton toff 160 260 µs Slew rate on 10 to 30% VOUT , R L = 12 Ω dV /dton 0.4 -- 2 V/ µs Slew rate off 70 to 40% VOUT , R L = 12 Ω -dV/dtoff 1- -4 V / µs Operating Parameters Operating voltage Tj =-40...+150°C:Vbb(on) 4.5 -- 32 V Undervoltage restart Tj =-40...+150°C:Vbb(u rst) -- -- 4.5 V Undervoltage restart of charge pump see diagram page 12 Vbb(ucp) -- 6.5 7.5 V Undervoltage hysteresis ΔVbb(under) = Vbb(u rst) - Vbb(under) ΔVbb(under) -- 0.2 -- V Overvoltage shutdown Tj =-40...+150°C:Vbb(over) 32 -- 46 V Overvoltage restart Tj =-40...+150°C:Vbb(o rst) 32 -- -- V Overvoltage hysteresis Tj =-40...+150°C:ΔVbb(over) -- 0.2 -- V Overvoltage protection2) Tj =-40...+150°C: Ibb=4 mA Vbb(AZ) 50 57 -- V Standby current (pin 3) V IN=0 Tj=-40...+25°C: Tj=150°C: Ibb(off) µA Operating current (Pin 1)3), VIN=5 IGND -- 1.1 -- mA 2) see also VON(CL) in table protection functions and circuit diagram page 7. Meassured without load. 3) Add IST , if IST > 0

Parameter and Conditions Symbol Values Unit at Tj = 25 °C, Vbb = 12 V unless otherwise specified min typ max Semiconductor Group 4 Protection Functions Overload current limit (pin 3 to 5) Tj=-40...+150°C IL(lim) 19 36 57 A Short circuit shutdown delay after input pos. slope VON > VON(SC) , Tj =-40..+150°C: min value valid only, if input "low" time exceeds 30 µs td(SC) 80 -- 400 µs Output clamp (inductive load switch off) at VOUT = Vbb - VON(CL) VON(CL) -- 50 -- V Short circuit shutdown detection voltage (pin 3 to 5) VON(SC) -- 8.3 -- V Thermal overload trip temperature Tjt 150 -- -- °C Thermal hysteresis ΔTjt -- 10 -- K Inductive load switch-off energy dissipation4), Tj Start = 150 °C Vbb = 12 V: Vbb = 24 V: EAS ELoad12 ELoad24 -- -- 1.7 1.3 1.0 J Reverse battery (pin 3 to 1) 5) -Vbb -- -- 32 V Integrated resistor in Vbb line R bb -- 120 -- Ω Diagnostic Characteristics Open load detection current T j=25..150°C: (on-condition, ) Tj=-40 °C: IL (OL) 10 500 600 mA Leakage output current (off-condition) IL(off) -- 6 -- µA 4) While demagnetizing load inductance, dissipated energy in PROFET is EAS = ∫ VON(CL) * iL(t) dt, approx. EAS = 1/2 * L * I2 L * ( VON(CL) VON(CL) - Vbb ), see diagramm page 8 5) Reverse load current (through intrinsic drain-source diode) is normally limited by the connected load. Reverse current IGND of ≈ 0.3 A at Vbb= -32 V through the logic heats up the device. Time allowed under these condition is dependent on the size of the heatsink. Reverse IGND can be reduced by an additional external GND-resistor (150 Ω ). Input and Status currents have to be limited (see max. ratings page 2 and circuit page 7).

Parameter and Conditions Symbol Values Unit at Tj = 25 °C, Vbb = 12 V unless otherwise specified min typ max Semiconductor Group 5 Input and Status Feedback6) Input resistance see circuit page 6 R I -- 10 -- k Ω Input turn-on threshold voltage Tj =-40..+150°C: VIN(T+) 1.5 -- 2.4 V Input turn-off threshold voltage Tj =-40..+150°C: VIN(T-) 1.0 -- -- V Input threshold hysteresis Δ VIN(T) -- 0.5 -- V Off state input current (pin 2) VIN = 0.4 V: On state input current (pin 2) VIN = 3.5 V: IIN(off) IIN(on) µA Status valid after input slopeTj=-40 ... +150°C: (short circuit) td(ST SC) 80 200 400 µs Status valid after input slopeTj=-40 ... +150°C: (open load) td(ST) 350 -- 1600 µs Status output (open drain) Zener limit voltageTj =-40...+150°C, IST = +1.6 mA: ST low voltageTj =-40...+150°C, IST = +1.6 mA: VST(high) VST(low) 5.4 6.1 6.9 0.4 V Status voltage while Vbb <2.4 V Tj=25 ... +150°C: IST = 500 µA Tj=40°C: VST -- -- 1.0 1.2 V 6) If a ground resistor RGND is used, add the voltage drop across this resistor. Internal Z-diode typ. 6.1 V, see maximum ratings page 2, circuit page 7

L H L H H H H H H H H H Open load L H H H L H L L H H L Short circuit to GND L H L L H L H L H L L Short circuit to Vbb L H H H H H (L9)) H H (L9)) L H H H (L9)) Overtem- perature L H L L L L L L L L L L Under- voltage L H L L L 10) L10) H H L10) L10) L11) L11) Overvoltage L H L L L L H H L L L L L = "Low" Level H = "High" Level 7) Power Transistor off, high impedance 8) The short circuit signal from last ON state is latched until next turn-on, see timing diagram page 10 9) Low resistance short Vbb to output may be detected by no-load-detection 10) No current sink capability during undervoltage shutdown 11) Current sink capability see page 5 Terms PROFET V IN ST OUT GND bb VSTV IN IST IIN Vbb Ibb IL VOUTIGND VON R GND Input circuit (ESD protection) IN GND IR ESD-ZD III ESD zener diodes are not designed for continuous current Status output ST GND ESD- ZD +5V ESD zener diodes are not designed for continuous current Short Circuit detection Fault Condition: VON > 8.3 V typ.; IN high Short circuit detection Logic unit + Vbb OUT V ON

Inductive and overvoltage output clamp + Vbb OUT GND V Z V ON VON clamped to 50 V typ. Overvolt. and reverse batt. protection + Vbb V OUT IN ST bbR Signal GND Logic PROFET V Z R GND GND INR STR R bb 120 Ω typ., VZ 57 V typ., , add RGND , RIN, RST for extended protection Open-load detection Fault Condition: VON < RON * IL(OL); IN high Open load detection Logic unit + Vbb OUT ON VON GND disconnect PROFET V IN ST OUT GND bb Vbb 1 V I V S VGND Any kind of load. In case of Input=high VOUT ≈ VI - VIN(T+) Due to VGND >0, no VS = low signal available. GND disconnect with GND pull up PROFET V IN ST OUT GND bb Vbb VGNDVI VS Any kind of load. If VGND > VI - VIN(T+) device stays off Due to VGND >0, no VS = low signal available. Vbb disconnect with charged inductive load PROFET V IN ST OUT GND bb Vbb high

V IN ST OUT GND bb Vbb high Inductive Load switch-off energy dissipation PROFET V IN ST OUT GND bb E E E E AS bb L R ELoad Energy dissipated in PROFET EAS = Ebb + EL - ER . ELoad < EL, EL = 1/2 * L * I2 L

all versions: High-side switch, Input protection, ESD protection, load dump and reverse battery protection Type BTS 432D2 432E2 432F2 432I 2 430K2 Logic version DEF I K Overtemperature protection Tj >150 °C, latch function12)13) Tj >150 °C, with auto-restart on cooling X X XX X Short-circuit to GND protection switches off when VON >8.3 V typ.12) (when first turned on after approx. 200 µs) XXXX X Open load detection in OFF-state with sensing current 30 µA typ. in ON-state with sensing voltage drop across power transistor XXX X X Undervoltage shutdown with auto restartXXXX X Overvoltage shutdown with auto restartXXXX X Status feedback for overtemperature short circuit to GND short to V bb open load undervoltage overvoltage X X 14) X X X X X 14) X X X 14) X X X X X X X X X 15) -14) X X X Status output type CMOS Open drain X XX X X Output negative voltage transient limit (fast inductive load switch off) to Vbb - VON(CL) XXXX X Load current limit high level (can handle loads with high inrush currents) medium level low level (better protection of application) XX X X X 12) Latch except when Vbb -VOUT < VON(SC) after shutdown. In most cases VOUT = 0 V after shutdown (VOUT ≠ 0 V only if forced externally). So the device remains latched unless Vbb < VON(SC) (see page 4). No latch between turn on and td(SC). 13) With latch function. Reseted by a) Input low, b) Undervoltage, c) Overvoltage 14) Low resistance short Vbb to output may be detected by no-load-detection 15) with status latch until next turn on

Standard TO-220 AB/5 Ordering code BTS430K2 Q67060-S6200-A2 TO-220 AB/5, OPTION E3043 Ordering code BTS430K2 E3043 Q67060-S6200-A3 SMD TO-220 AB/5, OPTION E3122 Ordering code BTS430K2 E3122A T&R: Q67060-S6200-A4 Changed since 04/96 Case E3122A drawing changed