BTS428L2

BTS428L2 SIEMENS | Alldatasheet

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PROFET ® BTS428L2 Semiconductor Group Page 1 of 12 1999-Feb-26 Smart High-Side Power Switch One Channel: 60mΩ Status Feedback Product Summary Package On-state Resistance R ON 60m Ω Operating Voltage V bb(on) 4.75...41V Nominal load current I L(NOM) 7.0A Current limitation I L(SCr) 17A General Description

• N channel vertical power MOSFET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology.
• Fully protected by embedded protection functions

Applications

• µC compatible high-side power switch with diagnostic feedback for 5V, 12V and 24V grounded loads
• All types of resistive, inductive and capacitve loads
• Most suitable for loads with high inrush currents, so as lamps
• Replaces electromechanical relays, fuses and discrete circuits Basic Functions
• Very low standby current
• CMOS compatible input
• Improved electromagnetic compatibility (EMC)
• Fast demagnetization of inductive loads
• Stable behaviour at undervoltage
• Wide operating voltage range
• Logic ground independent from load ground Protection Functions
• Short circuit protection
• Overload protection
• Current limitation
• Thermal shutdown
• Overvoltage protection (including load dump) with external resistor
• Reverse battery protection with external resistor
• Loss of ground and loss of Vbb protection
• Electrostatic discharge protection (ESD) Diagnostic Function
• Diagnostic feedback with open drain output
• Open load detection in ON-state
• Feedback of thermal shutdown in ON-state TO 252-5-1 (D-Pak less than half the size of a TO-220 SMD) Block Diagram Vbb Logic with protection functions IN ST GND Load PROFET OUT

Semiconductor Group Page 2 1999-Feb-26 Functional diagram Pin Definitions and Functions Pin Symbol Function

1 GND Logic ground

2I N Input, activates the power switch in case of logical high signal 3V bb Positive power supply voltage The tab is shorted to pin 3 4S T Diagnostic feedback, low on failure 5O U T Output to the load Tab V bb Positive power supply voltage The tab is shorted to pin 3 Pin configuration (top view) Tab = VBB 1 2 (3) 4 5 GND IN ST OUT OUT GND overvoltage protection logic internal voltage supply ESD temperature sensor clamp for inductive load gate control charge pump current limit Open load detectionST VBB LOAD IN PROFET

Semiconductor Group Page 3 1999-Feb-26 Maximum Ratings at Tj = 25 °C unless otherwise specified Parameter Symbol Values Unit Supply voltage (overvoltage protection see page 4) Vbb 43 V Supply voltage for full short circuit protection Tj Start=-40 ...+150°C Vbb 24 V Load dump protection1) VLoadDump = VA + Vs, VA = 13.5 V R I 2)= 2 Ω , R L= 4.0 Ω , td= 400 ms, IN= low or high VLoad dump 3) 60 V Load current (Current limit, see page 5) IL self-limited A Operating temperature range Storage temperature range Tj Tstg -40 ...+150 -55 ...+150 Power dissipation (DC), TC ≤ 25 °C Ptot 75 W Maximal switchable inductance, single pulse Vbb = 12V, Tj,start = 150°C, TC = 150°C const. (See diagram on page 8) IL(ISO) = 7 A, RL = 0 Ω; E4)AS =0.19J: ZL 5.6 mH Electrostatic discharge capability (ESD) IN: (Human Body Model) ST: out to all other pins shorted: acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993; R=1.5kΩ ; C=100pF VESD 1.0 4.0 8.0 kV Input voltage (DC) VIN -10 ... +16 V Current through input pin (DC) Current through status pin (DC) see internal circuit diagrams page 7 IIN IST ±2.0 ±5.0 mA Thermal Characteristics Parameter and Conditions Symbol Values Unit min typ max Thermal resistance chip - case: junction - ambient (free air): device on pcb5): R thJC R thJA 1.67 K/W 1) Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins (a 150Ω resistor for the GND connection is recommended). 2) R I = internal resistance of the load dump test pulse generator 3) VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 4) EAS is the maximum inductive switch-off energy 5) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb connection. PCB is vertical without blown air.

Semiconductor Group Page 4 1999-Feb-26

Electrical Characteristics

Parameter and Conditions Symbol Values Unit at Tj =-40...+150°C, Vbb = 12 V unless otherwise specified min typ max Load Switching Capabilities and Characteristics On-state resistance (pin 3 to 5) IL = 2 A; VBB ≥ 7V Tj=25 °C: Tj=150 °C: see diagram, page 9 R ON -- 50 100 120 m Ω Nominal load current, (pin 3 to 5) ISO 10483-1, 6.7:VON =0.5V, TC =85°C IL(ISO) 5.8 7.0 -- A Output current (pin 5) while GND disconnected or GND pulled up, Vbb=30 V, VIN= 0, see diagram page 7 (not tested specified by design) IL(GNDhigh) -- -- 2 mA Turn-on time IN to 90% VOUT : Turn-off time IN to 10% VOUT : R L = 12 Ω , ton toff 100 100 200 200 µs Slew rate on 10 to 30% VOUT , R L = 12 Ω , dV /dton 0.1 -- 1 V/ µs Slew rate off 70 to 40% VOUT , R L = 12 Ω , -dV/dtoff 0.1 -- 1 V/ µs Operating Parameters Operating voltage Tj =-40 Tj =+25...+150°C: Vbb(on) 4.75 -- V Overvoltage protection6) Tj =-40°C: Ibb=40 mA Tj =25...+150°C: Vbb(AZ) 41 V Standby current (pin 3) 7) Tj=-40...+25°C: VIN=0; see diagram on page 9 Tj= 150°C: Ibb(off) -- µA Off-State output current (included in Ibb(off)) VIN=0 IL(off) -- 1 10 µA Operating current 8), VIN=5 V IGND -- 0.8 1.5 mA 6) Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins (a 150Ω resistor for the GND connection is recommended. See also VON(CL) in table of protection functions and circuit diagram page 7. 7) Measured with load 8) Add IST , if IST > 0, add IIN, if VIN>5.5 V

Parameter and Conditions Symbol Values Unit at Tj =-40...+150°C, Vbb = 12 V unless otherwise specified min typ max Semiconductor Group Page 5 1999-Feb-26 Protection Functions Current limit (pin 3 to 5) IL(lim) (see timing diagrams on page 11) Tj =-40°C: Tj =25°C: Tj =+150°C: A Repetitive short circuit shutdown current limitIL(SCr) Tj = Tjt (see timing diagrams, page 11) -- 17 -- A Thermal shutdown time9 Tj,start = 25°C: (see timing diagrams on page 11) toff(SC) -- 7.5 -- ms Output clamp (inductive load switch off) at VOUT = Vbb - VON(CL) IL= 40 mA: VON(CL) 43 47 52 V Thermal overload trip temperature Tjt 150 -- -- °C Thermal hysteresis ΔTjt -- 10 -- K Reverse battery (pin 3 to 1) 10) -Vbb -- -- 32 V Reverse battery voltage drop (Vout > Vbb)11) IL = -2 A Tj=150 °C: -VON(rev) -- 600 -- mV Diagnostic Characteristics Open load detection current (on-condition) IL (OL) 10 -- 500 mA Input and Status Feedback12) Input resistance see circuit page 7 R I 2.5 3.5 6 k Ω Input turn-on threshold voltage VIN(T+) 1.7 -- 3.2 V Input turn-off threshold voltage VIN(T-) 1.5 -- -- V Input threshold hysteresis Δ VIN(T) -- 0.5 -- V Off state input current (pin 2), VIN = 0.4 V IIN(off) 1- -5 0 µA On state input current (pin 2), VIN = 5 V IIN(on) 20 50 90 µA Delay time for status with open load after switch off (see timing diagrams on page 11) td(ST OL4) 100 520 900 µs Status output (open drain) Zener limit voltage IST = +1.6 mA: ST low voltage IST = +1.6 mA: VST(high) VST(low) 5.4 6.1 0.4 V 9) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb connection. PCB is vertical without blown air. 10) Requires 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature protection is not active during reverse current operation! Input and Status currents have to be limited (see max. ratings page 3 and circuit page 7). 11) Specified by design, not tested 12) If a ground resistor RGND is used, add the voltage drop across this resistor.

Semiconductor Group Page 6 1999-Feb-26 Truth Table Input Output Status level level BTS 428L2 Normal operation L H L H H H Open load L H Z H H L Overtem- perature L H L L H L L = "Low" Level X = don't care Z = high impedance, potential depends on external circuit H = "High" Level Status signal after the time delay shown in the diagrams (see fig 5. page 11)

Semiconductor Group Page 7 1999-Feb-26 Terms PROFET V IN ST OUT GND bb V STV IN IST IIN V bb Ibb IL V OUTIGND VON R GND Input circuit (ESD protection) IN GND IR ESD-ZD III The use of ESD zener diodes as voltage clamp at DC conditions is not recommended Status output ST GND ESD- ZD +5V R ST(ON) ESD-Zener diode: 6.1 V typ., max 5.0 mA; RST(ON) < 375 Ω at 1.6 mA. The use of ESD zener diodes as voltage clamp at DC conditions is not recommended. Inductive and overvoltage output clamp + Vbb OUT GND PROFET V Z VON VON clamped to 47 V typ. Overvolt. and reverse batt. protection + Vbb IN ST STR GND GNDR Signal GND Logic PROFET V Z2 IR V Z1 Load GND LoadR OUT STR + 5V VZ1 = 6.1 V typ., VZ2 = 47 V typ., R GND = 150 Ω , R ST = 15 kΩ , R I= 3.5 kΩ typ. Open-load detection in on-state Open load, if VON < RON ·IL(OL); IN high Open load detection Logic unit + Vbb OUT ON VON GND disconnect PROFET V IN ST OUT GND bb Vbb 1 VIN V ST VGND Any kind of load. In case of Input=high is VOUT ≈ VIN - VIN(T+) . Due to VGND >0, no VST = low signal available.

Semiconductor Group Page 8 1999-Feb-26 GND disconnect with GND pull up PROFET V IN ST OUT GND bb Vbb VGND VINVST Any kind of load. If VGND > VIN - VIN(T+) device stays off Due to VGND >0, no VST = low signal available. Vbb disconnect with energized inductive load PROFET V IN ST OUT GND bb Vbb high For inductive load currents up to the limits defined by ZL(max. ratings and diagram on page 8) each switch is protected against loss of Vbb. Consider at your PCB layout that in the case of Vbb dis- connection with energized inductive load all the load current flows through the GND connection. Inductive Load switch-off energy dissipation PROFET V IN ST OUT GND bb E E E E AS bb L R ELoad L R L{Z L Energy stored in load inductance: EL = 1/2·L·I2 L While demagnetizing load inductance, the energy dissipated in PROFET is EAS = Ebb + EL - ER = ∫ VON(CL)·iL(t) dt, with an approximate solution for RL > 0 Ω : EAS = IL· L 2·R L

• (Vbb + |VOUT(CL) |)· ln (1+ IL·R L |VOUT(CL) | ) Maximum allowable load inductance for a single switch off L = f (IL ); Tj,start = 150°C,TC = 150°C const., Vbb = 12 V, R L = 0 Ω ZL [mH] 0.1 100 1000 27 1 2 1 7 IL [A]

Semiconductor Group Page 9 1999-Feb-26 Typ. on-state resistance R ON = f (Vbb,Tj ); IL = 2 A, IN = high R ON [mΩ ] 175 150 125 100 3 5 7 9 30 40 Tj=150°C 25°C -40°C Vbb [V] Typ. standby current Ibb(off) = f (Tj ); Vbb = 9...34 V, IN1,2 = low Ibb(off) [µA] -50 0 50 100 150 200 Tj [°C]

Semiconductor Group Page 12 1999-Feb-26 Package and Ordering Code All dimensions in mm Dpak-5 Pin: P-TO252-5-1 Sales code BTS428L2 Ordering code Q67060-S7403-A2 Published by Siemens AG, Bereich Bauelemente, Vertrieb, Produkt-Information, Balanstraße 73, D-81541 München  Siemens AG 1999. All Rights Reserved As far as patents or other rights of third parties are concerned, liability is only assumed for components per se, not for applications, processes and circuits implemented within components or assem- blies. The information describes a type of component and shall not be considered as warranted characteristics. The characteristics for which SIEMENS grants a warranty will only be specified in the purchase contract. Terms of delivery and rights to change design reserved. For questions on technology, delivery and prices please contact the Offices of Semiconductor Group in Germany or the Siemens Companies and Representatives woldwide (see address list). Due to technical requirements components may contain dan- gerous substances. For information on the type in question please contact your nearest Siemens Office, Semiconductor Group. Siemens AG is an approved CECC manufacturer. Packing: Please use the recycling operators known to you. We can also help you - get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is re- turned to us unsorted or which we are not obliged to accept we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorised for such purpose! Critical components 13) of the Semiconductor Group of Siemens AG, may only be used in life supporting devices or systems14) with the express written approval of the Semiconductor Group of Siemens AG. 13) A critical component is a component used in a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 14) Life support devices or systems are intended (a) to be implanted in the human body or (b) support and/or maintain and sustain and/or protect human life. If they fail, it is reasonably to assume that the health of the user or other persons may be endangered. GPT09161 5.4±0.1 -0.106.5+0.15 A ±0.59.9 6.22-0.2 1±0.1 ±0.150.8 0.15 max ±0.1per side 5x0.6 1.14 4.56 +0.08 -0.040.9 2.3-0.10 +0.05 B 0.51 min ±0.11 +0.08 -0.040.5 0...0.15 BA0.25 M 0.1 All metal surfaces tin plated, except area of cut. (4.17)