BTS426L1 INFINEON | Alldatasheet

Document overview

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Technical content

Features

  • Overload protection
  • Current limitation
  • Short circuit protection
  • Thermal shutdown
  • Overvoltage protection (including load dump)
  • Fast demagnetization of inductive loads
  • Reverse battery protection1)
  • Undervoltage and overvoltage shutdown with auto-restart and hysteresis
  • Open drain diagnostic output
  • Open load detection in ON-state
  • CMOS compatible input
  • Loss of ground and loss of Vbb protection
  • Electrostatic discharge (ESD) protection Application
  • µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads
  • All types of resistive, inductive and capacitve loads
  • Replaces electromechanical relays, fuses and discrete circuits General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions. + Vbb IN ST Signal GND ESD PROFET OUT GND Logic Voltage sensor Voltage source Charge pump Level shifter Temperature sensorRectifier Limit for unclamped ind. loads Gate protection Current limit Load GND Load V Logic Overvoltage protection GND RO Open load detection Short to Vbb 1) With external current limit (e.g. resistor R GND=150 Ω ) in GND connection, resistor in series with ST connection, reverse load current limited by connected load. Product Summary Overvoltage protection Vbb(AZ) 43 V Operating voltage Vbb(on) 5.0 ... 34 V On-state resistance RON 60 mΩ Load current (ISO) IL(ISO) 7.0 A Current limitation IL(SCr) 16 A TO-220AB/5 Standard Straight leads SMD

Semiconductor Group 2 2003-Oct-01 Pin Symbol Function

1 GND - Logic ground

2 IN I Input, activates the power switch in case of logical high signal

3 V bb + Positive power supply voltage,

the tab is shorted to this pin

4 ST S Diagnostic feedback, low on failure

5 OUT

(Load, L) O Output to the load Maximum Ratings at Tj = 25 °C unless otherwise specified Parameter Symbol Values Unit Supply voltage (overvoltage protection see page 3) Vbb 43 V Supply voltage for full short circuit protection Tj Start=-40 ...+150°C Vbb 34 V Load dump protection2) VLoadDump = UA + Vs, UA = 13.5 V RI3)= 2 Ω , RL= 1.7 Ω , td= 200 ms, IN= low or high VLoad dump4) 60 V Load current (Short circuit current, see page 4) IL self-limited A Operating temperature range Storage temperature range Tj Tstg -40 ...+150 -55 ...+150 Power dissipation (DC), TC ≤ 25 °C Ptot 75 W Inductive load switch-off energy dissipation, single pulse Vbb = 12V, Tj,start = 150°C, TC = 150°C const. IL = 7.0 A, ZL = 24 mH, 0 Ω : E AS 0.74 J Electrostatic discharge capability (ESD) IN: (Human Body Model) all other pins: VESD 1.0 2.0 kV Input voltage (DC) VIN -10 ... +16 V Current through input pin (DC) Current through status pin (DC) see internal circuit diagrams page 6 IIN IST ±2.0 ±5.0 mA Thermal Characteristics Parameter and Conditions Symbol Values Unit min typ max Thermal resistance chip - case: junction - ambient (free air): RthJC RthJA 1.67 K/W SMD version, device on PCB 5): 34 2) Supply voltages higher than V bb(AZ) require an external current limit for the GND and status pins, e.g. with a 150 Ω resistor in the GND connection and a 15 kΩ resistor in series with the status pin. A resistor for the protection of the input is integrated. 3) RI = internal resistance of the load dump test pulse generator 4) VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 5) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm 2 (one layer, 70µm thick) copper area for Vbb connection. PCB is vertical without blown air.

Semiconductor Group 3 2003-Oct-01

Electrical Characteristics

Parameter and Conditions Symbol Values Unit at Tj = 25 °C, Vbb = 12 V unless otherwise specified min typ max Load Switching Capabilities and Characteristics On-state resistance (pin 3 to 5) IL = 2 A Tj=25 °C: Tj=150 °C: RON 100 120 mΩ Nominal load current, ISO Norm (pin 3 to 5) VON = 0.5 V, TC = 85 °C IL(ISO) 5.8 7.0 -- A Output current (pin 5) while GND disconnected or GND pulled up, Vbb=30 V, VIN= 0, see diagram page 7 IL(GNDhigh) -- -- 10 mA Turn-on time IN to 90% VOUT: Turn-off time IN to 10% VOUT: ton toff 200 230 400 450 µs Slew rate on 10 to 30% VOUT, RL = 12 Ω , Tj =-40...+150°C dV /dton 0.1 -- 1 V/ µs Slew rate off 70 to 40% VOUT, RL = 12 Ω , Tj =-40...+150°C -dV/dtoff 0.1 -- 1 V/ µs Operating Parameters Operating voltage6) Tj =-40...+150°C: Vbb(on) 5.0 -- 34 V Undervoltage restart Tj =-40...+25°C: Tj =+150°C: Vbb(u rst) -- -- 5.0 7.0 V Undervoltage restart of charge pump see diagram page 12 Tj =-40...+150°C: Vbb(ucp) -- 5.6 7.0 V Undervoltage hysteresis ∆Vbb(under) = Vbb(u rst) - Vbb(under) ∆Vbb(under) -- 0.2 -- V Overvoltage shutdown Tj =-40...+150°C: Vbb(over) 34 -- 43 V Overvoltage restart Tj =-40...+150°C: Vbb(o rst) 33 -- -- V Overvoltage hysteresis Tj =-40...+150°C: ∆Vbb(over) -- 0.5 -- V Overvoltage protection7) Tj =-40...+150°C: Ibb=40 mA Vbb(AZ) 42 47 -- V Standby current (pin 3) VIN=0 T j=-40...+25°C: T j= 150°C: Ibb(off) µA Leakage output current (included in Ibb(off)) VIN=0 IL(off) -- -- 12 µA 6) At supply voltage increase up to Vbb= 5.6 V typ without charge pump, VOUT ≈Vbb - 2 V 7) See also VON(CL) in table of protection functions and circuit diagram page 7. 8) Add IST, if IST > 0, add IIN, if VIN>5.5 V

Parameter and Conditions Symbol Values Unit at Tj = 25 °C, Vbb = 12 V unless otherwise specified min typ max Semiconductor Group 4 2003-Oct-01 Protection Functions9) Initial peak short circuit current limit (pin 3 to 5) IL(SCp) Tj =-40°C: Tj =25°C: Tj =+150°C: A Repetitive short circuit shutdown current limit IL(SCr) Tj = Tjt (see timing diagrams, page 10) -- 16 -- A Output clamp (inductive load switch off) at VOUT = Vbb - VON(CL) IL= 40 mA: VON(CL) 47 53 V Thermal overload trip temperature Tjt 150 -- -- °C Thermal hysteresis ∆Tjt -- 10 -- K Reverse battery (pin 3 to 1) 10) - Vbb -- -- 32 V Reverse battery voltage drop (Vout > Vbb) IL = -4 A Tj=150 °C: -VON(rev) 610 mV Diagnostic Characteristics Open load detection current Tj=-40 °C: (on-condition) Tj=25 ..150°C: IL (OL) 20 850 750 mA Open load detection voltage11) (off-condition) Tj=-40..150°C: VOUT(OL) 2 3 4 V Internal output pull down (pin 5 to 1), VOUT=5 V, Tj=-40..150°C RO 10 30 k Ω 9) Integrated protection functions are des igned to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation. 10) Requires 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature protection is not active during reverse current operation! Input and Status currents have to be limited (see max. ratings page 2 and circuit page 7). 11) External pull up resistor required for open load detection in off state.

Parameter and Conditions Symbol Values Unit at Tj = 25 °C, Vbb = 12 V unless otherwise specified min typ max Semiconductor Group 5 2003-Oct-01 Input and Status Feedback12) Input resistance Tj=-40..150°C, see circuit page 6 RI 2.5 3.5 6 kΩ Input turn-on threshold voltage Input turn-off threshold voltage Input threshold hysteresis ∆ VIN(T) -- 0.5 -- V Off state input current (pin 2), VIN = 0.4 V, Tj =-40..+150°C IIN(off) 1 -- 50 µA On state input current (pin 2), VIN = 3.5 V, Tj =-40..+150°C IIN(on) 20 50 90 µA Delay time for status with open load after switch off (see timing diagrams, page 11), Tj =-40..+150°C td(ST OL4) 100 520 1000 µs Status invalid after positive input slope (open load) Tj=-40 ... +150°C: td(ST) -- 250 600 µs Status output (open drain) Zener limit voltage T j =-40...+150°C, IST = +1.6 mA: ST low voltage Tj =-40...+25°C, IST = +1.6 mA: T j = +150°C, IST = +1.6 mA: VST(high) VST(low) 5.4 6.1 0.4 0.6 V 12) If a ground resistor RGND is used, add the voltage drop across this resistor.

Semiconductor Group 6 2003-Oct-01 Truth Table Input- Output Status level level 425 L1 426 L1 Normal operation L H L H H H Open load L H 13) H H (L14)) L Short circuit to V bb L H H H L15) H (L16)) Overtem- perature L H L L H L Undervoltage L H L L H H Overvoltage L H L L H H L = "Low" Level X = don't care Z = high im pedance, potential depends on external circuit H = "High" Level Status signal after the time delay shown in the diagrams (see fig 5. page 11...12) 13) Power Transistor off, high impedance 14) with external resistor between pin 3 and pin 5 15) An external short of output to Vbb, in the off state, causes an internal current from output to ground. If RGND is used, an offset voltage at the GND and ST pins will occur and the VST low signal may be errorious. 16) Low resistance to Vbb may be detected in ON-state by the no-load-detection Terms PROFET V IN ST OUT GND bb VSTV IN IST IIN Vbb Ibb IL VOUTIGND VON R GND Input circuit (ESD protection) IN GND IR ESD-ZD III ESD zener diodes are not to be used as voltage clamp at DC conditions. Operation in this mode may result in a drift of the zener voltage (increase of up to 1 V).

Semiconductor Group 7 2003-Oct-01 Status output ST GND ESD- ZD +5V RST(ON) ESD-Zener diode: 6.1 V typ., max 5 mA; RST(ON) < 380 Ω at 1.6 mA, ESD zener diodes are not to be used as voltage clamp at DC conditions. Operation in this mode may result in a drift of the zener voltage (increase of up to 1 V). Inductive and overvoltage output clamp + Vbb OUT GND PROFET VZ VON VON clamped to 47 V typ. Overvolt. and reverse batt. protection + Vbb IN ST STR INR GND GNDR Signal GND Logic PROFET VZ2 IR VZ1 VZ1 = 6.2 V typ., VZ2 = 47 V typ., RGND = 150 Ω , RST= 15 kΩ , RI= 3.5 kΩ typ. Open-load detection ON-state diagnostic condition: VON < RON * IL(OL); IN high Open load detection Logic unit + Vbb OUT ON VON OFF-state diagnostic condition: VOUT > 3 V typ.; IN low Open load detection Logic unit VOUT Signal GND REXT RO OFF GND disconnect PROFET V IN ST OUT GND bb Vbb 1 VIN VST VGND Any kind of load. In case of Input=high is VOUT ≈ VIN - VIN(T+) . Due to VGND >0, no VST = low signal available.

Semiconductor Group 8 2003-Oct-01 GND disconnect with GND pull up PROFET V IN ST OUT GND bb Vbb VGND VIN VST Any kind of load. If VGND > VIN - VIN(T+) device stays off Due to VGND >0, no VST = low signal available. Vbb disconnect with energized inductive load PROFET V IN ST OUT GND bb Vbb high Normal load current can be handled by the PROFET itself. Vbb disconnect with charged external inductive load PROFET V IN ST OUT GND bb Vbb high S D If other external inductive loads L are connected to the PROFET, additional elements like D are necessary. Inductive Load switch-off energy dissipation PROFET V IN ST OUT GND bb E E E EAS bb L R ELoad L RL{Z L Energy stored in load inductance: EL = 1/2·L·I2 L While demagnetizing load inductance, the energy dissipated in PROFET is EAS= Ebb + EL - ER= VON(CL)·iL(t) dt, with an approximate solution for RL > 0 Ω : EAS= IL· L 2·RL

  • (Vbb + |VOUT(CL)|)· ln (1+ IL·RL |VOUT(CL)| ) Maximum allowable load inductance for a single switch off L = f (IL ); Tj,start = 150°C,TC = 150°C const., Vbb = 12 V, RL = 0 Ω L [mH] 100 1000 10000 2 7 12 17 IL [A]

Semiconductor Group 9 2003-Oct-01 Typ. transient thermal impedance chip case ZthJC = f(tp)ZthJC [K/W] 0.01 0.1 1E-5 1E-4 1E-3 1E-2 1E-1 1E0 1E1 0.01 0.02 0.05 0.1 0.2 0.5 tp [s] Transient thermal impedance chip ambient air ZthJA = f(tp)ZthJA [K/W] 0.1 100 1E-5 1E-4 1E-3 1E-2 1E-1 1E0 1E1 1E2 1E3 0.01 0.02 0.05 0.1 0.2 0.5 tp [s]

Semiconductor Group 13 2003-Oct-01 Package and Ordering Code All dimensions in mm Standard TO-220AB/5 Ordering code BTS426L1 Q67060-S6108-A2 TO-220AB/5, Option E3043 Ordering code BTS426L1 E3043 Q67060-S6108-A3 SMD TO-220AB/5, Opt. E3062 Ordering code BTS426L1 E3062A T&R: Q67060-S6108-A4 Changed since 04.96 Date Change Dec 1996 td(ST OL4) max reduced from 1500 to 800µs, typical from 400 to 320µs, min limit unchanged EAS maximum rating and diagram added Zth specification added Typ. reverse battery voltage drop - VON(rev) added

Semiconductor Group 14 2003-Oct-01 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81669 München © Infineon Technologies AG 2001 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.