BTS4142N

BTS4142N INFINEON | Alldatasheet

Document overview

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• PDF pages: 19

Technical content

Features

• Short circuit protection
• Current limitation
• Overload protection
• Overvoltage protection (including load dump)
• Undervoltage shutdown with auto- restart and hysteresis
• Switching inductive loads
• Clamp of negative voltage at output with inductive loads
• CMOS compatible input
• Thermal shutdown with restart
• ESD - Protection
• Loss of GND and loss of Vbb protection
• Very low standby current
• Reverse battery protection with external resistor
• Improved electromagnetic compatibility (EMC) Product Summary Overvoltage protection Vbb(AZ) 47 V Operating voltage Vbb(on) 12...45 V On-state resistance RON 200 mΩ SOT-223 VPS051631 Application
• All types of resistive, inductive and capacitive loads
• µC compatible power switch for 12 V and 24 V DC applications
• Replaces electromechanical relays and discrete circuits General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions.

+ Vbb Signal GND ESD miniPROFET® OUT GND Logic Voltage sensor Voltage source Charge pump Level shifter Temperature sensorRectifier Limit for unclamped ind. loads Gate protection Current limit Load GND Load VLogic Overvoltage protection Function Output to the load Logic ground Input, activates the power switch in case of logic high signal Positive power supply voltage Pin Symbol

1 OUT

2 GND

4 Vbb

at Tj = 25°C, unless otherwise specified Symbol Value Unit Supply voltage Vbb -0,31)...48 V Continuous input voltage2) VIN -10...Vbb Load current (Short - circuit current, see page 5) IL self limited A Current through input pin (DC) IIN ±5 mA Reverse current through GND-pin3) -IGND -0.5 A Operating temperature Tj internal limited °C Storage temperature Tstg -55 ... +150 Power dissipation 4) Ptot 1.4 W Inductive load switch-off energy dissipation4)5) single pulse Tj = 125 °C, IL = 1 A EAS 0.16 J Load dump protection5) VLoadDump6)= VA + VS RI=2Ω , td=400ms, VIN= low or high, VA=13,5V RL = 47 Ω VLoaddump V Electrostatic discharge voltage (Human Body Model) according to ANSI EOS/ESD - S5.1 - 1993 ESD STM5.1 - 1998 Input pin All other pins VESD kV 1defined by Ptot 2At VIN > Vbb, the input current is not allowed to exceed ±5 mA. 3defined by Ptot 4Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for Vbb connection. PCB is vertical without blown air. 5not subject to production test, specified by design 6VLoaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 . Supply voltages higher than Vbb(AZ) require an external current limit for the GND pin, e.g. with a 150Ω resistor in GND connection. A resistor for the protection of the input is integrated.

Electrical Characteristics

Parameter Symbol Values Unit Thermal Characteristics Thermal resistance @ min. footprint Rth(JA) - - 125 K/W Thermal resistance @ 6 cm2 cooling area 1) Rth(JA) - - 70 Thermal resistance, junction - soldering point RthJS - - 7 K/W Load Switching Capabilities and Characteristics On-state resistance Tj = 25 °C, IL = 0.5 A Tj = 125 °C RON 150 270 200 320 mΩ Nominal load current2) Device on PCB 1) IL(nom) 1.4 - - A Turn-on time to 90% VOUT RL = 47 Ω , VIN = 0 to 10 V ton - 50 100 µs Turn-off time to 10% VOUT RL = 47 Ω , VIN = 10 to 0 V toff - 75 150 Slew rate on 10 to 30% VOUT, RL = 47 Ω , Vbb = 15 V dV/dton - 1 2 V/µs Slew rate off 70 to 40% VOUT, RL = 47 Ω , Vbb = 15 V -dV/dtoff - 1 2 1Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for Vbb connection. PCB is vertical without blown air. 2Nominal load current is limited by the current limitation ( see page 5 )

Parameter Symbol Values Unit Operating Parameters Operating voltage Vbb(on) 12 - 45 V Undervoltage shutdown Vbb(under) 7 - 10.5 Undervoltage restart Vbb(u rst) - - 11 Undervoltage hysteresis ∆Vbb(under) = Vbb(u rst) - Vbb(under) ∆Vbb(under) - 0.5 - Standby current Tj = 125 °C1) Ibb(off) µA Operating current IGND - 1 1.6 mA Leakage output current (included in Ibb(off)) VIN ≤ 1,2 V IL(off) - 3.5 10 µA Protection Functions2) Initial peak short circuit current limit Tj = -40 °C, Vbb = 20 V, tm = 150 µs Tj = 25 °C Tj = 125 °C IL(SCp) 1.4 4.5 A Repetitive short circuit current limit T j = Tjt (see timing diagrams) IL(SCr) - 2.2 - Output clamp (inductive load switch off) at V OUT = Vbb - VON(CL), Ibb = 4 mA VON(CL) 62 68 - V Overvoltage protection 3) Ibb = 4 mA Vbb(AZ) 47 - - Thermal overload trip temperature4) Tjt 135 - - °C Thermal hysteresis ∆Tjt - 10 - K 1higher current due temperature sensor 2Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation. 3see also VON(CL) in circuit diagram 4 higher operating temperature at normal function available

Parameter Symbol Values Unit Input Continuous input voltage1) VIN -102) - Vbb V Input turn-on threshold voltage VIN(T+) - - 3.0 Input turn-off threshold voltage VIN(T-) 1.82 - - Input threshold hysteresis ∆VIN(T) - 0.2 - Off state input current VIN ≤ 1,8 V IIN(off) 20 - - µA On state input current IIN(on) - - 110 Input delay time at switch on Vbb td(Vbbon) 150 340 - µs Input resistance (see page 8) RI 1.5 3 5 kΩ Reverse Battery Reverse battery voltage3)2) RGND = 0 Ω RGND = 150 Ω -Vbb 0.3 V Continuous reverse drain current2) Tj = 25 °C IS - - 1 A Drain-source diode voltage (VOUT > Vbb) IF = 1 A -VON - 0.6 1.2 V 1At VIN > Vbb, the input current is not allowed to exceed ±5 mA. 2not subject to production test, guaranted by design 3defined by Ptot

All EMC-Characteristics are based on limited number of sampels and no part of production test. Test Conditions: If not other specified the test circuitry is the minimal functional configuration without any external components for protection or filtering. Supply voltage: Vbb = 13.5V Temperature: Ta = 23 ±5°C ; Load: RL = 220Ω Operation mode: PWM Frequency: 100Hz / Duty Cycle: 50% DC On/Off DUT-Specific.: RGND Fast electrical transients Acc. ISO 7637 Test Pulse Test Level Test Results Pulse Cycle Time and On Off Generator Impedance 1 -200 V C C 500ms ; 10Ω 2 +200 V C C 500ms ; 10Ω 3a -200 V C C 100ms ; 50Ω 3b + 200 V C C 100ms ; 50Ω 41) -7 V C C 0,01Ω 5 175 V E (70V) E (70V) 400ms ; 2Ω The test pulses are applied at Vbb Definition of functional status Class Content C All functions of the device are performed as designed after exposure to disturbance. E One or more function of a device does not perform as designed after exposure and can not be returned to proper operation without repairing or replacing the device. The value after the character shows the limit. Test circuit: PROFET V OUTIN bb RL Pulse Bat. RGND GND 1Supply voltage Vbb = 12 V instead of 13,5 V.

Acc. IEC 61967-4 (1Ω / 150Ω method) Typ. Vbb-Pin Emission at DC-On with 150Ω -matching network -20 -10 100 0,1 1 10 100 1000 f / M H z dBµV 150ohm Cl ass6 150ohm Cl ass1 VBB, noi se fl oor VBB, ON 150 Ω / 8-H 150 Ω / 13-N Typ. Vbb-Pin Emission at PWM-Mode with 150Ω -matching network -20 -10 100 0,1 1 10 100 1000 f / M H z dBµV 150ohm Cl ass6 150ohm Cl ass1 VBB, noi se f l oor VBB, PW M 150 Ω / 8-H 150 Ω / 13-N Test circuit: PROFET V OUTIN bb R 5µH 5µH 150Ω -Network GND RGND For defined decoupling and high reproducibility a defined choke (5µH at 1 MHz) is inserted between supply and Vbb-pin.

Acc. 47A/658/CD IEC 62132-4 (Direct Power Injection) Direct Power Injection: Forward Power CW Failure criteria: Amplitude and frequency deviation max. 10% at Out Typ. Vbb-Pin Susceptibility at DC-On/Off 1 10 100 1000 f / M H z dBm Li mi t VBB, ON VBB, OFF D evice: B T S 4142 Load: 47 O hm s O -M ode: O N / O FF / P W M C oupling P oint: V B B M onitoring: O ut M odulation: C W Typ. Vbb-Pin Susceptibility at PWM-Mode 1 10 100 1000 f / M H z dBm Li mi t VBB, PW M D evice: B T S 4142 Load: 47 O hm s O -M ode: O N / O F F / P W M C oupling P oint: V B B M onitoring: O ut M odulation: C W Test circuit: PROFET V OUTIN bb RL HF 5µH 150Ω 6,8nF 5µH 150Ω 6,8nF GND RGND For defined decoupling and high reproducibility the same choke and the same 150Ω -matching network as for the emission measurement is used.

Terms Inductive and overvoltage output clamp + V bb OUT GND V Z V ON PROFET V IN OUT GND bb VIN IIN Vbb Ibb IL VOUTIGND VON RGND VON clamped to 63 V min. Input circuit (ESD protection) Overvoltage protection of logic part IN GND IR II Vbb + Vbb IN GND GNDR Signal GND Logic VZ2 optional The use of ESD zener diodes as voltage clamp at DC conditions is not recommended VZ2=Vbb(AZ)=47V min., RI=3 kΩ typ., RGND=150Ω Reverse battery protection GND Logic IN OUT LR Power GND GNDR Signal GND Power Inverse IR Vbb- Diode optional RGND=150Ω , RI=3kΩ typ., Temperature protection is not active during inverse current

GND disconnect Inductive Load switch-off energy dissipation PROFET V IN OUT GND bb Vbb VIN VGND PROFET V IN OUT GND bb E E E EAS bb L R ELoad RL L {LZ GND disconnect with GND pull up PROFET V IN OUT GND bb Vbb VGND VIN Energy stored in load inductance: EL = ½ * L * IL2 While demagnetizing load inductance, the enérgy dissipated in PROFET is EAS = Ebb + EL - ER = VON(CL) * iL(t) dt, with an approximate solution for RL > 0Ω : E IL R VV IR V AS L L bb OUT CL LL OUT CL =+ + * || )() | ()2 1 Vbb disconnect with charged inductive load PROFET V IN OUT GND bb Vbb high

Typ. transient thermal impedance ZthJA=f(tp) @ 6cm2 heatsink area Parameter: D=tp/T 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 4 s tp -1 10 0 10 1 10 2 10 K/WZthJA D=0,5 D=0,2 D=0,1 D=0,05 D=0,02 D=0,01 D=0 Typ. transient thermal impedance ZthJA=f(tp) @ min. footprint Parameter: D=tp/T 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 3 s tp -1 10 0 10 1 10 2 10 K/WZthJA D=0,5 D=0,2 D=0,1 D=0,05 D=0,02 D=0,01 D=0 Typ. on-state resistance RON = f(Tj) ; Vbb = 15 V ; Vin = high -40 -20 0 20 40 60 80 100 °C 140 Tj 100 150 200 mΩ 300 RON Typ. on-state resistance RON = f(Vbb); IL = 0.5A ; Vin = high 0 5 10 15 20 25 30 35 40 V 50 Vbb 100 150 200 mΩ 300 RON 25°C 125°C -40°C

Typ. turn on time ton = f(Tj); RL = 47Ω -40 -20 0 20 40 60 80 100 °C 140 Tj µs 100 ton 15V 30V Typ. turn off time toff = f(Tj); RL = 47Ω -40 -20 0 20 40 60 80 100 °C 140 Tj µs 120 toff 15...30V Typ. slew rate on dV/dton = f(Tj) ; RL = 47 Ω -40 -20 0 20 40 60 80 100 °C 140 Tj 0.2 0.4 0.6 0.8 1.2 1.4 1.6 V/µs dV dton 30V 15V Typ. slew rate off dV/dtoff = f(Tj); RL = 47 Ω -40 -20 0 20 40 60 80 100 °C 140 Tj 0.5 1.5 2.5 V/µs -dV dtoff 30V 15V

Typ. initial peak short circuit current limit IL(SCp) = f(Tj) ; Vbb = 20V; tm = 150µs -40 -20 0 20 40 60 80 100 °C 140 Tj 0.5 1.5 2.5 A IL(SCp) Typ. initial short circuit shutdown time toff(SC) = f(Tj,start) ; Vbb = 20V -40 -20 0 20 40 60 80 100 °C 140 Tj ms toff(SC) Typ. initial peak short circuit current limit IL(SCp) = f(Vbb); tm = 150µs 0 5 10 15 20 25 30 35 40 V 50 Vbb 0.5 1.5 2.5 A IL(SCp) 25°C -40°C 125°C Typ. input current IIN(on/off) = f(Tj); Vbb = 15 V; VIN = low/high VINlow ≤ 1,8V; VINhigh = 5V -40 -20 0 20 40 60 80 100 °C 140 Tj µA IIN off on

Typ. input current IIN = f(VIN); Vbb =15 V 0 2.5 5 7.5 10 12.5 15 V 20 VIN µA IIN 25°C 125°C -40°C Typ. input threshold voltage VIN(th) = f(Tj) ; Vbb = 15 V -40 -20 0 20 40 60 80 100 °C 140 Tj 0.5 1.5 V VIN(th) on off Typ. input threshold voltage VIN(th) = f(Vbb) ; Tj = 25°C 0 10 20 30 V 50 Vbb 0.5 1.5 V VIN(th) on off Typ. standby current Ibb(off) = f(Tj) ; Vbb = 32V ; VIN ≤ 1,2 V -40 -20 0 20 40 60 80 100 °C 140 Tj µA Ibb(off)

Maximum allowable inductive switch-off energy, single pulse EAS = f(IL); Tjstart = 125°C IL 0.5 1.5 J 2.5 EAS Typ. leakage current IL(off) = f(Tj) ; Vbb = 32V ; VIN ≤ 1,2 V -40 -20 0 20 40 60 80 100 °C 140 Tj 0.5 1.5 2.5 µA IL(off) Typ. input delay time at switch on Vbb td(Vbbon) = f(Vbb) 0 5 10 15 20 25 30 35 40 V 50 Vbb 100 150 200 250 300 µs 400 td(Vbbon)

Ordering code, standard (1000 pcs.) Q67060-S6121 Ordering code, optional (4000 pcs.) Q67060-S6128 ±0.1 ±0.2 ±0.10.7 321 GPS05560 6.5 acc. to +0.2 DIN 6784 1.6±0.1 15˚ max ±0.040.28 7±0.3 ±0.23.5 0.5 0.1 maxmin BM0.25 B A 2.3 4.6 AM0.25 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81669 München © Infineon Technologies AG 2001 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.