BTS410E2-E3062A INFINEON | Alldatasheet

Document overview

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Technical content

Features

  • Overload protection
  • Current limitation
  • Short circuit protection
  • Thermal shutdown
  • Overvoltage protection (including load dump)
  • Fast demagnetization of inductive loads
  • Reverse battery protection1)
  • Undervoltage and overvoltage shutdown with auto-restart and hysteresis
  • Open drain diagnostic output
  • Open load detection in ON-state
  • CMOS compatible input
  • Loss of ground and loss of Vbb protection
  • Electrostatic discharge (ESD ) protection Application
  • µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads
  • All types of resistive, inductive and capacitve loads
  • Replaces electromechanical relays, fuses and discrete circuits General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions. + Vbb IN ST Signal GND ESD PROFET OUT GND Logic Voltage sensor Voltage source Open load detection Short circuit detection Charge pump Level shifter Temperature sensorRectifier Limit for unclamped ind. loads Gate protection Current limit Load GND Load VLogic Overvoltage protection 1) With external current limit (e.g. resistor RGND =150 Ω ) in GND connection, resistors in series with IN and ST connections, reverse load current limited by connected load. Product Summary Overvoltage protection Vbb(AZ) 65 V Operating voltage Vbb(on) 4.7 ... 42 V On-state resistance R ON 220 m Ω Load current (ISO) IL(ISO) 1.8 A Current limitation IL(SCr) 5A TO-220AB/5 Standard Straight leads SMD

Semiconductor Group 2 2003-Oct-01 Pin Symbol Function

1 GND - Logic ground

2 IN I Input, activates the power switch in case of logical high signal

3 V bb + Positive power supply voltage,

the tab is shorted to this pin

4 ST S Diagnostic feedback, low on failure

5 OUT

(Load, L) O Output to the load Maximum Ratings at Tj = 25 °C unless otherwise specified Parameter Symbol Values Unit Supply voltage (overvoltage protection see page 3) Vbb 65 V Load dump protection2) VLoadDump = U A + Vs, U A = 13.5 V R I3)= 2 Ω , R L= 6.6 Ω , td= 400 ms, IN= low or high VLoad dump4) 100 V Load current (Short circuit current, see page 4) IL self-limited A Operating temperature range Storage temperature range Tj Tstg -40 ...+150 -55 ...+150 Power dissipation (DC), TC ≤ 25 °C Ptot 50 W Inductive load switch-off energy dissipation, single pulse Vbb = 12V, Tj,start = 150°C, TC = 150°C const. IL = 1.8 A, ZL = 2.3 H, 0 Ω : E AS 4.5 J Electrostatic discharge capability (ESD) IN: (Human Body Model) all other pins: VESD 1 kV Input voltage (DC) VIN -0.5 ... +6 V Current through input pin (DC) Current through status pin (DC) see internal circuit diagrams page 6 IIN IST ±5.0 ±5.0 mA Thermal Characteristics Parameter and Conditions Symbol Values Unit min typ max Thermal resistance chip - case: junction - ambient (free air): R thJC R thJA 2.5 K/W SMD version, device on PCB 5): -- 35 -- 2) Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins, e.g. with a 150 Ω resistor in the GND connection and a 15 kΩ resistor in series with the status pin. A resistor for the protection of the input is integrated. 3) R I = internal resistance of the load dump test pulse generator 4) VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 5) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb connection. PCB is vertical without blown air.

Semiconductor Group 3 2003-Oct-01

Electrical Characteristics

Parameter and Conditions Symbol Values Unit at Tj = 25 °C, Vbb = 12 V unless otherwise specified min typ max Load Switching Capabilities and Characteristics On-state resistance (pin 3 to 5) IL = 1.6 A Tj=25 °C: Tj=150 °C: R ON 190 390 220 440 m Ω Nominal load current, ISO Norm (pin 3 to 5) VON = 0.5 V, TC = 85 °C IL(ISO) 1.6 1.8 -- A Output current (pin 5) while GND disconnected or GND pulled up, Vbb=30 V, VIN= 0, see diagram page 7, Tj =-40...+150°C IL(GNDhigh) -- -- 1 mA Turn-on time IN to 90% VOUT : Turn-off time IN to 10% VOUT : ton toff 125 µs Slew rate on 10 to 30% VOUT , R L = 12 Ω , Tj =-40...+150°C dV /dton -- -- 3 V/ µs Slew rate off 70 to 40% VOUT , R L = 12 Ω , Tj =-40...+150°C -dV/dtoff -- -- 6 V/ µs Operating Parameters Operating voltage 6) Tj =-40...+150°C: Vbb(on) 4.7 -- 42 V Undervoltage shutdown Tj =25°C: Tj =-40...+150°C: Vbb(under) 2.9 2.7 4.5 4.7 V Undervoltage restart Tj =-40...+150°C: Vbb(u rst) -- -- 4.9 V Undervoltage restart of charge pump see diagram page 13 Vbb(ucp) -- 5.6 6.0 V Undervoltage hysteresis ∆Vbb(under) = Vbb(u rst) - Vbb(under) ∆Vbb(under) -- 0.1 -- V Overvoltage shutdown Tj =-40...+150°C: Vbb(over) 42 -- 52 V Overvoltage restart Tj =-40...+150°C: Vbb(o rst) 40 -- -- V Overvoltage hysteresis Tj =-40...+150°C: ∆Vbb(over) -- 0.1 -- V Overvoltage protection7) Tj =-40...+150°C: Ibb=4 mA Vbb(AZ) 65 70 -- V Standby current (pin 3) T j=-40...+25°C: VIN=0 T j= 150°C: Ibb(off) -- µA Leakage output current (included in Ibb(off)) VIN=0 IL(off) -- -- 20 µA Operating current (Pin 1)8), VIN=5 V, Tj =-40...+150°C IGND -- 1 2.1 mA 6) At supply voltage increase up to Vbb= 5.6 V typ without charge pump, VOUT ≈Vbb - 2 V 7) Meassured without load. See also VON(CL) in table of protection functions and circuit diagram page 7.

Parameter and Conditions Symbol Values Unit at Tj = 25 °C, Vbb = 12 V unless otherwise specified min typ max Semiconductor Group 4 2003-Oct-01 Protection Functions9) Initial peak short circuit current limit (pin 3 to 5)10), ( max 450 µs if VON > VON(SC) ) IL(SCp) Tj =-40°C: Tj =25°C: Tj =+150°C: A Repetitive overload shutdown current limit IL(SCr) VON = 8 V, Tj = Tjt (see timing diagrams, page 11) -- 5 -- A Short circuit shutdown delay after input pos. slope VON > VON(SC) , Tj =-40..+150°C: min value valid only, if input "low" time exceeds 60 µs td(SC) -- 450 µs Output clamp (inductive load switch off) at VOUT = Vbb - VON(CL) IL= 40 mA, Tj =-40..+150°C: VON(CL) 68 73 V Short circuit shutdown detection voltage (pin 3 to 5) VON(SC) 8.5 -- V Thermal overload trip temperature Tjt 150 -- -- °C Thermal hysteresis ∆Tjt -- 10 -- K Reverse battery (pin 3 to 1) 11) - Vbb -- -- 32 V Diagnostic Characteristics Open load detection current (on-condition) Tj=-40 ..150°C: IL (OL) -- 150 mA 8) Add IST , if IST > 0, add IIN, if VIN>5.5 V 9) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation. 10) Short circuit current limit for max. duration of td(SC) max=450 µs, prior to shutdown 11) Requires 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature protection is not active during reverse current operation! Input and Status currents have to be limited (see max. ratings page 2 and circuit page 7).

Parameter and Conditions Symbol Values Unit at Tj = 25 °C, Vbb = 12 V unless otherwise specified min typ max Semiconductor Group 5 2003-Oct-01 Input and Status Feedback12) Input turn-on threshold voltage Input turn-off threshold voltage Input threshold hysteresis ∆ VIN(T) -- 0.5 -- V Off state input current (pin 2), VIN = 0.4 V IIN(off) 1 -- 30 µA On state input current (pin 2), VIN = 5 V IIN(on) 10 25 70 µA Status invalid after positive input slope (short circuit) Tj=-40 ... +150°C: td(ST SC) -- -- 450 µs Status invalid after positive input slope (open load) Tj=-40 ... +150°C: td(ST) 300 -- 1400 µs Status output (open drain) Zener limit voltage T j =-40...+150°C, IST = +50 uA: ST low voltage Tj =-40...+150°C, IST = +1.6 mA: VST(high) VST(low) 5.0 0.4 V 12) If a ground resistor RGND is used, add the voltage drop across this resistor.

Semiconductor Group 6 2003-Oct-01 Truth Table Input- Output Status level level 412 410 410 E2/F2 410 410 Normal operation L H L H H H H H H H H H H H Open load L H 13) H L H H L H L H L L H Short circuit to GND L H L L H L H L H L H H H L Short circuit to V bb L H H H L H H H (L14)) H H (L14)) H H (L14)) L H Overtem- perature L H L L L L L L L L L L L L Under- voltage L H L L L 15) L15) L15) L15) H H H H H H Overvoltage L H L L L L L L H H H H H H L = "Low" Level X = don't care Z = high impedance, potential depends on external circuit H = "High" Level Status signal after the time delay shown in the diagrams (see fig 5. page 12...13) 13) Power Transistor off, high impedance, versions BTS 410H, BTS 412B: internal pull up current source for open load detection. 14) Low resistance short Vbb to output may be detected in ON-state by the no-load-detection 15) No current sink capability during undervoltage shutdown Terms PROFET V IN ST OUT GND bb VSTV IN IST IIN Vbb Ibb IL VOUTIGND VON R GND Input circuit (ESD protection) IN GND IR ZD ZD III1 I2 ESD- ZD I1 6 V typ., ESD zener diodes are not to be used as voltage clamp at DC conditions. Operation in this mode may result in a drift of the zener voltage (increase of up to 1 V).

Semiconductor Group 7 2003-Oct-01 Status output ST GND ESD- ZD +5V RST(ON) ESD-Zener diode: 6 V typ., max 5 mA; R ST(ON) < 250 Ω at 1.6 mA, ESD zener diodes are not to be used as voltage clamp at DC conditions. Operation in this mode may result in a drift of the zener voltage (increase of up to 1 V). Short circuit detection Fault Condition: VON > 8.5 V typ.; IN high Short circuit detection Logic unit + Vbb OUT V ON Inductive and overvoltage output clamp + Vbb OUT GND PROFET VZ VON VON clamped to 68 V typ. Overvolt. and reverse batt. protection + Vbb IN ST STR INR GND GNDR Signal GND Logic PROFET VZ2 VZ1 VZ1 = 6.2 V typ., VZ2 = 70 V typ., R GND = 150 Ω , RIN, R ST = 15 kΩ Open-load detection ON-state diagnostic condition: VON < R ON * IL(OL); IN high Open load detection Logic unit + Vbb OUT ON VON GND disconnect PROFET V IN ST OUT GND bb Vbb 1 VIN VST VGND Any kind of load. In case of Input=high is VOUT ≈ VIN - VIN(T+) . Due to VGND >0, no VST = low signal available.

Semiconductor Group 8 2003-Oct-01 GND disconnect with GND pull up PROFET V IN ST OUT GND bb Vbb VGND VIN VST Any kind of load. If VGND > VIN - VIN(T+) device stays off Due to VGND >0, no VST = low signal available. Vbb disconnect with energized inductive load PROFET V IN ST OUT GND bb Vbb high Normal load current can be handled by the PROFET itself. Vbb disconnect with charged external inductive load PROFET V IN ST OUT GND bb Vbb high S D If other external inductive loads L are connected to the PROFET, additional elements like D are necessary. Inductive Load switch-off energy dissipation PROFET V IN ST OUT GND bb E E E EAS bb L R ELoad L RL{Z L Energy stored in load inductance: EL = 1/2·L·I2 L While demagnetizing load inductance, the energy dissipated in PROFET is EAS = Ebb + EL - ER = VON(CL)·iL(t) dt, with an approximate solution for RL > 0 Ω : EAS = IL· L 2·R L

  • (Vbb + |VOUT(CL) |)· ln (1+ IL·R L |VOUT(CL) | ) Maximum allowable load inductance for a single switch off L = f (IL ); Tj,start = 150°C,TC = 150°C const., Vbb = 12 V, R L = 0 Ω L [mH] 100 1000 10000 123456 IL [A]

Semiconductor Group 9 2003-Oct-01 Typ. transient thermal impedance chip case ZthJC = f(tp, D), D=tp/T ZthJC [K/W] 0.01 0.1 1E-5 1E-4 1E-3 1E-2 1E-1 1E0 1E1 0.01 0.02 0.05 0.1 0.2 0.5 tp [s]

Semiconductor Group 10 2003-Oct-01 Options Overview all versions: High-side switch, Input protection, ESD protection, load dump and reverse battery protection with 150 Ω in GND connection, protection against loss of ground Type BTS 412 B2 410D2 410E2 410F2 410G2 410H2 307 308 Logic version B D E F G H Overtemperature protection with hysteresis Tj >150 °C, latch function16)17) Tj >150 °C, with auto-restart on cooling X X X X X X X X Short circuit to GND protection switches off when VON >3.5 V typ. and Vbb> 7 V typ16) (when first turned on after approx. 150 µs) X X switches off when VON >8.5 V typ.16) (when first turned on after approx. 150 µs) Achieved through overtemperature protection X X X X X X Open load detection in OFF-state with sensing current 30 µA typ. in ON-state with sensing voltage drop across power transistor X X X X X X X X Undervoltage shutdown with auto restart X X X X X X X X Overvoltage shutdown with auto restart18) X X X X X X - X Status feedback for overtemperature short circuit to GND short to V bb open load undervoltage overvoltage X X X X X X X X 19) X X X X X 19) X X X 19) X X 19) X X X X X X X X X X X X X X Status output type CMOS Open drain X X X X X X X X Output negative voltage transient limit (fast inductive load switch off) to Vbb - VON(CL) X X X X X X X X Load current limit high level (can handle loads with high inrush currents) low level (better protection of application) X X X X X X X X Protection against loss of GND X X X X X X X X 16) Latch except when Vbb -VOUT < VON(SC) after shutdown. In most cases VOUT = 0 V after shutdown (VOUT ≠ 0 V only if forced externally). So the device remains latched unless Vbb < VON(SC) (see page 4). No latch between turn on and td(SC). 17) With latch function. Reseted by a) Input low, b) Undervoltage 18) No auto restart after overvoltage in case of short circuit 19) Low resistance short Vbb to output may be detected in ON-state by the no-load-detection

Semiconductor Group 14 2003-Oct-01 Figure 9a: Overvoltage at short circuit shutdown: IN V OUT t V bb ST I L V bb(o rst) Output short to GND short circuit shutdown Overvoltage due to power line inductance. No overvoltage auto- restart of PROFET after short circuit shutdown.

Semiconductor Group 15 2003-Oct-01 Package and Ordering Code All dimensions in mm Standard TO-220AB/5 Ordering code BTS 410 E2 Q67060-S6102-A2 TO-220AB/5, Option E3043 Ordering code BTS 410 E2 E3043 Q67060-S6102-A3 SMD TO-220AB/5, Opt. E3062 Ordering code BTS410E2 E3062A T&R: Q67060-S6102-A4 Changed since 04.96 Date Change Mar. 1997 EAS maximum rating and diagram and ZthJC diagram added ESD capability (except Input) specified to 2kV, RthJA SMD specified I L(GND high) max reduced from 10 to 1 mA Option Overview table columns for BTS307/308 added Fig. 1a: V out-spike at Vbb-turn-on added

Semiconductor Group 16 2003-Oct-01 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81669 München © Infineon Technologies AG 2001 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life- support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.