BTS409L1 SIEMENS | Alldatasheet

Document overview

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Technical content

Features

  • Overload protection
  • Current limitation
  • Short circuit protection
  • Thermal shutdown
  • Overvoltage protection (including load dump)
  • Fast demagnetization of inductive loads
  • Reverse battery protection1)
  • Undervoltage and overvoltage shutdown with auto-restart and hysteresis
  • Open drain diagnostic output
  • Open load detection in ON-state
  • CMOS compatible input
  • Loss of ground and loss of Vbb protection
  • Electrostatic discharge (ESD ) protection Application
  • µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads
  • All types of resistive, inductive and capacitve loads
  • Replaces electromechanical relays, fuses and discrete circuits General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Fully protected by embedded protection functions. + Vbb IN ST Signal GND ESD PROFET OUT GND Logic Voltage sensor Voltage source Charge pump Level shifter Temperature sensorRectifier Limit for unclamped ind. loads Gate protection Current limit Load GND Load V Logic Overvoltage protection GND R O Open load detection Short to Vbb 1) With external current limit (e.g. resistor RGND =150 Ω ) in GND connection, resistor in series with ST connection, reverse load current limited by connected load. Product Summary Overvoltage protectionVbb(AZ ) 43 V Operating voltage Vbb(on) 5.0 ... 34 V On-state resistance R ON 200 m Ω Load current (ISO) IL(ISO) 2.3 A Current limitation IL(SCr) 4A TO-220AB/5 Standard Straight leads SMD

1 GND - Logic ground

2 IN I Input, activates the power switch in case of logical high signal

3V bb + Positive power supply voltage, the tab is shorted to this pin

4 ST S Diagnostic feedback, low on failure

5 OUT

(Load, L) O Output to the load Maximum Ratings at Tj = 25 °C unless otherwise specified Parameter Symbol Values Unit Supply voltage (overvoltage protection see page 3)Vbb 43 V Supply voltage for full short circuit protection Tj Start=-40 ...+150°C Vbb 34 V Load dump protection2) VLoadDump = U A + Vs, U A = 13.5 V R I3)= 2 Ω , R L= 5.3 Ω , td= 200 ms, IN= low or high VLoad dump4) 60 V Load current (Short circuit current, see page 4)IL self-limited A Operating temperature range Storage temperature range Tj Tstg -40 ...+150 -55 ...+150 Power dissipation (DC), TC ≤ 25 °C Ptot 18 W Inductive load switch-off energy dissipation, single pulse Vbb = 12V, Tj,start = 150°C, TC = 150°C const. IL = 2.3 A, ZL = 98 mH, 0 Ω : EAS 335 mJ Electrostatic discharge capability (ESD ) IN: (Human Bod y Model) all other pins: VESD 1.0 2.0 kV Input voltage (DC) VIN -10 ... +16 V Current through input pin (DC) Current through status pin (DC) see internal circuit diagrams page 6 IIN IST ±2.0 ±5.0 mA Thermal Characteristics Parameter and Conditions S ymbol Values Unit min typ max Thermal resistance chip - case: junction - ambient (free air): R thJC R thJA K/W SMD version, device on PCB5):3 9 2) Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins, e.g. with a 150 Ω resistor in the GND connection and a 15 kΩ resistor in series with the status pin. A resistor for the protection of the input is integrated. 3) R I = internal resistance of the load dump test pulse generator 4) VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 5) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb connection. PCB is vertical without blown air.

Electrical Characteristics

Parameter and Conditions Symbol Values Unit at Tj = 25 °C, Vbb = 12 V unless otherwise specified min typ max Load Switching Capabilities and Characteristics On-state resistance (pin 3 to 5) IL = 1.8 A Tj=25 °C: Tj=150 °C: R ON -- 160 320 200 400 m Ω Nominal load current, ISO Norm (pin 3 to 5) VON = 0.5 V, TC = 85 °C IL(ISO) 1.8 2.3 -- A Output current (pin 5) while GND disconnected or GND pulled up, Vbb=30 V, VIN= 0, see diagram page 7 IL(GNDhigh) -- -- 10 mA Turn-on time IN to 90% VOUT : Turn-off time IN to 10% VOUT : ton toff 200 200 400 400 µs Slew rate on 10 to 30% VOUT , R L = 12 Ω , Tj =-40...+150°C dV /dton 0.1 -- 1 V/ µs Slew rate off 70 to 40% VOUT , R L = 12 Ω , Tj =-40...+150°C -dV/dtoff 0.1 -- 1 V/ µs Operating Parameters Operating voltage6) Tj =-40...+150°C:Vbb(on) 5.0 -- 34 V Undervoltage restart Tj =-40...+25°C: Tj =+150°C: Vbb(u rst) -- -- 5.0 7.0 V Undervoltage restart of charge pump see diagram page 11 Tj =-40...+150°C: Vbb(ucp) -- 5.6 7.0 V Undervoltage hysteresis ΔVbb(under) = Vbb(u rst) - Vbb(under) ΔVbb(under) -- 0.2 -- V Overvoltage shutdown Tj =-40...+150°C:Vbb(over) 34 -- 43 V Overvoltage restart Tj =-40...+150°C:Vbb(o rst) 33 -- -- V Overvoltage hysteresis Tj =-40...+150°C:ΔVbb(over) -- 0.5 -- V Overvoltage protection7) Tj =-40...+150°C: Ibb=40 mA Vbb(AZ) 42 47 -- V Standby current (pin 3) VIN=0 Tj=-40...+25°C: Tj= 150°C: Ibb(off) -- µA Leakage output current (included in Ibb(off)) VIN=0 IL(off) -- -- 12 µA 6) At supply voltage increase up to Vbb= 5.6 V typ without charge pump, VOUT ≈Vbb - 2 V 7) See also VON(CL) in table of protection functions and circuit diagram page 7.

Parameter and Conditions Symbol Values Unit at Tj = 25 °C, Vbb = 12 V unless otherwise specified min typ max Semiconductor Group 4 Operating current (Pin 1)8), VIN=5 V, Tj =-40...+150°C IGND -- 1.8 3.5 mA Protection Functions Initial peak short circuit current limit (pin 3 to 5)IL(SCp) Tj =-40°C: Tj =25°C: Tj =+150°C: 5.5 4.5 2.5 9.5 7.5 4.5 A Repetitive short circuit shutdown current limitIL(SCr) Tj = Tjt (see timing diagrams, page 9) -- 4 -- A Output clamp (inductive load switch off) at VOUT = Vbb - VON(CL) IL= 40 mA: VON(CL) 41 47 53 V Thermal overload trip temperature Tjt 150 -- -- °C Thermal hysteresis ΔTjt -- 10 -- K Reverse battery (pin 3 to 1) 9) -Vbb -- -- 32 V Diagnostic Characteristics Open load detection current Tj=-40 °C: (on-condition) Tj=25 ..150°C: IL (OL) 10 200 150 mA Open load detection voltage10) (off-condition) Tj=-40..150°C: VOUT(OL) 234 V Internal output pull down (pin 5 to 1), VOUT =5 V, Tj=-40..150°C R O 41 03 0 k Ω 8) Add IST , if IST > 0, add IIN, if VIN>5.5 V 9) Requires 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature protection is not active during reverse current operation! Input and Status currents have to be limited (see max. ratings page 2 and circuit page 7). 10) External pull up resistor required for open load detection in off state.

Parameter and Conditions Symbol Values Unit at Tj = 25 °C, Vbb = 12 V unless otherwise specified min typ max Semiconductor Group 5 Input and Status Feedback11) Input resistance see circuit page 6 R I 2.5 3.5 6 k Ω Input turn-on threshold voltage Tj =-40..+150°C:VIN(T+) 1.7 -- 3.5 V Input turn-off threshold voltage Tj =-40..+150°C:VIN(T-) 1.5 -- -- V Input threshold hysteresis Δ VIN(T) -- 0.5 -- V Off state input current (pin 2), VIN = 0.4 V, Tj =-40..+150°C IIN(off) 1- - 5 0 µA On state input current (pin 2), VIN = 3.5 V, Tj =-40..+150°C IIN(on) 20 50 90 µA Delay time for status with open load after switch off (see timing diagrams, page 10), Tj =-40..+150°C td(ST OL4) 100 400 800 µs Status invalid after positive input slope (open load) Tj=-40 ... +150°C: td(ST) -- 250 600 µs Status output (open drain) Zener limit voltageTj =-40...+150°C, IST = +1.6 mA: ST low voltageTj =-40...+25°C, IST = +1.6 mA: Tj = +150°C, IST = +1.6 mA: VST(high) VST(low) 5.4 6.1 0.4 0.6 V 11) If a ground resistor RGND is used, add the voltage drop across this resistor.

L H L H H H Open load L H 12) H H (L13)) L Short circuit to V bb L H H H L14) H (L15)) Overtem- perature L H L L H L Under- voltage L H L L H H Overvoltage L H L L H H L = "Low" Level X = don't care Z = high impedance, potential depends on external circuit H = "High" Level Status signal after the time delay shown in the diagrams (see fig 5. page 10...11) 12) Power Transistor off, high impedance 13) with external resistor between pin 3 and pin 5 14) An external short of output to Vbb, in the off state, causes an internal current from output to ground. If R GND is used, an offset voltage at the GND and ST pins will occur and the VST low signal may be errorious. 15) Low resistance to Vbb may be detected in ON-state by the no-load-detection Terms PROFET V IN ST OUT GND bb VSTV IN IST IIN Vbb Ibb IL VOUTIGND VON R GND Input circuit (ESD protection) IN GND IR ESD-ZD III ESD zener diodes are not to be used as voltage clamp at DC conditions. Operation in this mode may result in a drift of the zener voltage (increase of up to 1 V). Status output ST GND ESD- ZD +5V R ST(ON) ESD-Zener diode: 6.1 V typ., max 5 mA; R ST(ON) < 380 Ω at 1.6 mA, ESD zener diodes are not to be used as voltage clamp at DC conditions. Operation in this mode may result in a drift of the zener voltage (increase of up to 1 V). Inductive and overvoltage output clamp + Vbb OUT GND PROFET V Z VON VON clamped to 47 V typ.

Overvolt. and reverse batt. protection + Vbb IN ST STR INR GND GNDR Signal GND Logic PROFET V Z2 IR V Z1 VZ1 = 6.2 V typ., VZ2 = 47 V typ., R GND = 150 Ω , R ST = 15 kΩ , R I= 3.5 kΩ typ. Open-load detection ON-state diagnostic condition: VON < R ON * IL(OL); IN high Open load detection Logic unit + Vbb OUT ON VON OFF-state diagnostic condition: VOUT > 3 V typ.; IN low Open load detection Logic unit V OUT Signal GND R EXT R O OFF GND disconnect PROFET V IN ST OUT GND bb Vbb 1 VIN VST VGND Any kind of load. In case of Input=high is VOUT ≈ VIN - VIN(T+) . Due to VGND >0, no VST = low signal available. GND disconnect with GND pull up PROFET V IN ST OUT GND bb Vbb VGND V IN VST Any kind of load. If VGND > VIN - VIN(T+) device stays off Due to VGND >0, no VST = low signal available. Vbb disconnect with energized inductive load PROFET V IN ST OUT GND bb Vbb high Normal load current can be handled by the PROFET itself.

Vbb disconnect with charged external inductive load PROFET V IN ST OUT GND bb Vbb high S D If other external inductive loads L are connected to the PROFET, additional elements like D are necessary. Inductive Load switch-off energy dissipation PROFET V IN ST OUT GND bb E E E E AS bb L R ELoad L R L{Z L Energy stored in load inductance: EL = 1/2·L·I2 L While demagnetizing load inductance, the energy dissipated in PROFET is EAS = Ebb + EL - ER = ∫ VON(CL)·iL(t) dt, with an approximate solution for RL > 0 Ω : EAS = IL· L 2·R L

  • (Vbb + |VOUT(CL) |)· ln (1+ IL·R L |VOUT(CL) | ) Maximum allowable load inductance for a single switch off L = f (IL ); Tj,start = 150°C,TC = 150°C const., Vbb = 12 V, R L = 0 Ω L [mH] 100 1000 10000 12345 IL [A] Transient thermal impedance chip case ZthJC = f(tp)ZthJC [K/W] 0.01 0.1 1E-5 1E-4 1E-3 1E-2 1E-1 1E0 1E1 1E2 0.01 0.02 0.05 0.1 0.2 0.5 tp [s]

Standard TO-220AB/5 Ordering code BTS409L1 Q67060-S6107-A2 TO-220AB/5, Option E3043 Ordering code BTS409L1 E3043 Q67060-S6107-A3 SMD TO-220AB/5, Opt. E3062 Ordering code BTS409L1 E3062A T&R: Q67060-S6107-A4 Changed since 04.96 Date Change Dec Zth Specification added 1996 td(ST OL4) max reduced from 1500 to 800µs ESD capability increased EAS maximum rating and diagram added Components used in life-support devices or systems must be expressly authorised for such purpose! Critical components16) of the Semiconductor Group of Siemens AG, may only be used in life supporting devices or systems17) with the express written approval of the Semiconductor Group of Siemens AG. 16) A critical component is a component used in a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 17) Life support devices or systems are intended (a) to be implanted in the human body or (b) support and/or maintain and sustain and/or protect human life. If they fail, it is reasonably to assume that the health of the user or other persons may be endangered.