BTS3800SL INFINEON | Alldatasheet
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Technical content
Rev. 1.1, 2011-04-30 BTS3800SL Small Protected Automotive Relay Driver Single Channel, 800mΩ HITFET Smart Low Side Power Switch
Datasheet 2 Rev. 1.1, 2011-04-30 HITFET - BTS3800SL Smart low side power switch
Datasheet 3 Rev. 1.1, 2011-04-30 HITFET - BTS3800SL Smart low side power switch BTS3800SL 1O v e r v i e w
Features
- Short circuit and over load protection
- Thermal shutdown with latch behavior
- ESD protection
- Over voltage protection
- Logic level input suit able for 5V and 3.3V
- Small footprint automotive power package
- Green Product (RoHS compliant)
- AEC Qualified
Description
The BTS3800SL is a single channel Low Side power s witch with embedded protective functions in PG-SCT595 package. The device is monolithically integrated wit h a N channel power MOSFET and additional protection functions. The BTS3800SL is especially designed as a protected relay driver in automotive and industrial applications. Table 1 Product Summary Drain voltage 1) Active clamped VDS 41 V Maximum Input Voltage VIN 5.5 V Maximum On resistance at 150°C and 5V input voltage RDS(ON) 1.6 Ω Typical On-State resistance at 25°C and 5V input voltage RDS(ON) 0.8 Ω Nominal load current ID(nom) 350 mA Minimum Current threshold level ID(OVL) 0.75 A Single Clamping Energy EAS 65 mJ
Datasheet 4 Rev. 1.1, 2011-04-30 HITFET - BTS3800SL Smart low side power switch Overview Protective Functions
- Electrostatic discha rge protection (ESD)
- Active clamping over voltage protection
- Thermal shutdown with latching behavior
- Short circuit protection
- Current threshold switch off
Applications
- Designed for driving relays in automotive and industrial applications
- Protected power swit ch for small loads
- Protected line driver
- Protected supply switch
- Replacement of discrete circuits Detailed Description The device is able to switch all kind of resistiv e, inductive and capacit ive loads, limited by EAS and maximum current capabilities. The BTS3800SL offers ESD protection on the IN Pin refering to the Source Pin (Ground). The overtemperature protection prevents the device fr om overheating due to overload and/or bad cooling conditions. The temperature information is given by a temperature sensor which is placed monolitically in the power stage. The BTS3800SL has a thermal latch function. The device will turn off and stay off, even after the measured temperature has dropped below the thermal hysteresis. After cooling down the device can be switched on again by toggling the IN pin. The over voltage protection is active during load dump or inductive turn off conditions. In this conditions the power stage is limiting the Drain to Source voltage at VDS(AZ) and dissipating energy.
Smart low side power switch Block Diagram Datasheet 5 Rev. 1.1, 2011-04-30
2 Block Diagram
Figure 1 Block Diagram of BTS3800SL
2.1 Terms
Figure 2 shows all external terms used in this data sheet. Figure 2 Naming of electrical parameters Drain Source IN Over- voltage Protection Gate Driving Unit ESD Protection Over- temperature Protection Short circuit detection Blockdiagram_3800 .emf Vbb GND Terms _3800 .emf IN Vbb VIN IIN RIN Source ISour c e ZL ID VD Drain
Datasheet 6 Rev. 1.1, 2011-04-30 HITFET - BTS3800SL Smart low side power switch Pin Configuration
3 Pin Configuration
3.1 Pin Assignment BTS3800SL
Figure 3 Pin Configuration PG-SCT595
3.2 Pin Definitions and Functions
1D r a i n Drain pin; Load connection for power DMOS 2,5 n.c. not connected; Should be connected to ground for cooling 3I N Input pin; Digital input
4 Source Source pin; Ground, Source of power DMOS
P i n C onf i g .emf
Smart low side power switch General Product Characteristics Datasheet 7 Rev. 1.1, 2011-04-30
4 General Product Characteristics
4.1 Absolute Maximum Ratings
Note: Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Note: Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are not designed for continuous repetitive operation. Absolute Maximum Ratings1) Tj = -40 °C to +150 °C; all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) 1) Not subject to production test, specified by design. Pos. Parameter Symbol Limit Values Unit Test Conditions Min. Max. Voltages
4.1.1 Drain voltage
VDS –4 1 V 2) 2) Active clamped.
4.1.2 Drain voltage for short circuit protection VDS(SC) –3 6 V
4.1.3 Input Voltage VIN -0.3 5.5 V – 4.1.4 Input Current IIN self limited -0.3 V < VIN < 5.5 V -4 4 mA 5.5 V < VIN < 8.0 V 4.1.5 Maximum Drain Current ID –0 . 7 5 A 3) 3) Current protection threshold see “Over Load Protection” on Page 13 for details. Energies
4.1.6 Unclamped single pulse inductive energy EAS –6 5 m J ID = 350mA;
TJ(start) = 150 °C
4.1.7 Unclamped repetitive pulse inductive
energy 1×104 cycles EAR –1 4 m J ID = 350mA; Vbb = 18 V; TJ(start) = 85 °C
4.1.8 Unclamped repetitive pulse inductive
energy 1×106 cycles –1 2 m J ID = 350mA; Vbb = 18V; TJ(start) = 85°C Temperatures
4.1.9 Operating temperature TJ -40 +150 °C–
4.1.10 Storage temperature TSTG -55 +150 °C–
4.1.11 ESD Resistivity VESD kV HBM4)
4) ESD susceptibility, HBM acco rding to EIA/JESD 22-A114. All pins -4 4 Drain vs. Source -8 8
Datasheet 8 Rev. 1.1, 2011-04-30 HITFET - BTS3800SL Smart low side power switch General Product Characteristics
4.2 Functional Range
Note: Within the functional range the IC operates as described in the circuit description. The electrical characteristics are specified within the conditions given in the related electrical characteristics table.
4.3 Thermal Resistance
Note: This thermal data was generated in accordance with JEDEC JESD51 standards. For more information, go to www.jedec.org. Pos. Parameter Symbol Limit Values Unit Conditions Min. Max. 4.2.1 Input pin voltage (device ON) VIN 2.7 5.5 V –
4.2.1 Drain voltage VD – 41 V active clamped
4.2.2 Input pin current consumption IIN(ON) –0 . 5 m A Pos. Parameter Symbol Limit Values Unit Conditions Min. Typ. Max.
4.3.3 Junction to Pin 5 RthJpin ––2 7 K / W 1) 2)
1) Not subject to production test, specified by design 2) Specified RthJpin value is simulated at natural convection on a cold plate setup (all pins are fixed to ambient temperature). Ta = 25 °C. Device is loaded with 0.5 W power.
4.3.4 Junction to Ambient (2s2p) RthJA – 110 – K/W 1) 3)
3) Specified RthJA value is according to Jedec JESD51-2,-7 at natural convection on FR4 2s2p board; The product (Chip+Package) was simulated on a 76.2 x 114.3 x 1.5 mm board with 2 inner copper layers (2 x 70μm Cu, 2 x 35μm Cu). Ta = 25 °C, Device is loaded with 0.5 W power.
Smart low side power switch Input Stage Datasheet 9 Rev. 1.1, 2011-04-30
5 Input Stage
The following chapter describes the behavior and characteristic of the input pin.
5.1 Input Circuit
Figure 4 shows the input circuit of the BTS3800SL. The Zener diode protects the input circuit against ESD pulses. The internal circuitry is powered via the input pin. During normal operation the input is connected to the gate of the power MOSFET. The cu rrent handling capability of the driving circuit does not influence the device behavior as long as the supply current IIN(nom) is supplied. During PWM operation the recharging of the gate increases the current consumption to the level IIN(PWM). Figure 4 Input Circuit The current sink to ground ensures that the channel switches off in case of an open input pin. The Zener diode protects the input circuit against ESD pulses.
5.2 Input Characteristics
Note: Characteristics show the deviation of parameter at given input voltage and junction temperature. Typical values show the typical parameters expected from manufacturing. All voltages with respect to Source Pin unless otherwise stated. Electrical Characteristics: Input Stage Tj = -40 °C to +150 °C, Vbat = 8.0 V to 18V, all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) Pos. Parameter Symbol Limit Values Unit Test Conditions Min. Typ. Max. Input 5.2.1 Supply current from Input Pin IIN(ON) – 0.25 0.5 mA VDS = 0 V; VIN = 5.5 V 20kHz PWM (50%DC) 1) Not subject to production test ID = 350 mA Input .emf Source - Ground ZD IN IIN Gate IIS Logic
Datasheet 10 Rev. 1.1, 2011-04-30 HITFET - BTS3800SL Smart low side power switch Power stage
6 Power stage
6.1 Output On-state Resistance
The on-state resistance depends on the junction temperature TJ and on the applied input voltage. The following Figures show the dependencies for the typical on-state resistance RDS(on). Figure 5 BTS3800 Typical On-State Resistance, RDS(on) = f(TJ), VIN = 5.5V Figure 6 BTS3800 Typical On-State Resistance, RDS(on) = f(TJ), VIN = 3V 0,50 1,00 1,50 2,00 -50 -25 0 25 50 75 100 125 150 RDS(on) [ Ω ] T [ °C ] typ. rdson_5V_3800.emf 0,50 1,00 1,50 2,00 -50 -25 0 25 50 75 100 125 150 RDS(on) [ Ω ] T [ °C ] typ. rdson_3V_3800.emf
Smart low side power switch Power stage Datasheet 11 Rev. 1.1, 2011-04-30
6.2 Output Timing
A voltage signal at the input pin above the threshold voltage causes the power MOSFET to switch on. Figure 7 shows the timing definition. Figure 7 Definition of Power Output Timing for Resistive Load
6.3 Power Characteristics
Note: Characteristics show the deviation of parameter at given input voltage and junction temperature. Typical values show the typical parameters expected from manufacturing. All voltages with respect to Source Pin unless otherwise stated. Electrical Characteristics: Power Stage Tj = -40 °C to +150 °C, Vbat = 8.0 V to 18V, all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) Pos. Parameter Symbol Limit Values Unit Test Conditions Min. Typ. Max. Power Stage 6.3.1 On-State Resistance RDS(on) – 0.8 – Ω 1) TJ = 25 °C; VIN = 5.5 V ID = 350 mA – 1.4 1.6 Ω TJ = 150 °C; VIN = 5.5 V ID = 350 mA VIN = 3 V ID = 350 mA VIN = 3 V ID = 350 mA
6.3.2 Nominal load current ID(nom) 350 520 – mA 2)TJ < 150 °C;
TA = 105 °C; VIN = 5 V; VDS = 0.5 V IN [V] 5.0 t VD Vbb Switching.emf t 10 % 90 % ton toff 80 % 20 % dton dtof f
Datasheet 12 Rev. 1.1, 2011-04-30 HITFET - BTS3800SL Smart low side power switch Power stage 6.3.3 Zero input voltage drain leakage current IDSS –2 . 5 6 μA VD = 36 V;VIN = 0 V; 0.2 0.5 μA VD = 13.5 V;VIN = 0 V; TJ =2 5 °C1) TJ =8 5 °C1) TJ =1 5 0 °C Switching Vbb = 13.5 V, RL = 38 Ω, VIN = 5.0 V
6.3.4 Turn-on time ton –35 μss e e Figure 7 for
6.3.5 Turn-off time toff –3 5 μss e e Figure 7 for
6.3.6 Slew rate on -d Vds/dton –61 2 dVD =8 0t o2 0 %Vbb
6.3.7 Slew rate off d Vds/dtoff –1 2 2 2 dVD = 20 to 80% Vbb
6.3.8 Inverse Diode forward voltage VSD – -1.0 -1.5 V I D =350 mA VIN = 0 V 1) Not subject to production test, guaranteed by design. 2) Not subject to production test, calculated by RthJA and RDS(on). Electrical Characteristics: Power Stage (cont’d) Tj = -40 °C to +150 °C, Vbat = 8.0 V to 18V, all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) Pos. Parameter Symbol Limit Values Unit Test Conditions Min. Typ. Max.
Smart low side power switch Protection Functions Datasheet 13 Rev. 1.1, 2011-04-30
7 Protection Functions
The device provides embedded protecti ve functions. Integrated protection functions are designed to prevent IC destruction under fault conditions described in this datasheet. Fault conditions are considered as “outside” normal operating range. Protection functions are not designed for continuous repetitive operation.
7.1 Over Load Protection
The BTS3800SL is protected in case of over load or short circuit of the load. After time tOFF(OVL), the device switches off. It can be switched on by toggeling the IN pin. Please refer to Figure 8 for details. Figure 8 Shut down at over load
7.2 Over Temperature Protection
A temperature sensor causes a overheated BTS3800SL to switch off to prevent destruction. It can be switched on again by toggeling the IN pin.
7.3 Reverse Polarity Protection
In case of reverse polarity, the intrinsic body diode of the power transistor causes power dissipation. The reverse current through the intrinsic body diode of the power transistor has to be limited by the connected load. The over temperature and over load protection is not active during reverse polarity. ID [A] t t OverLoad. emf tOFF(OVL) ID( O VL ) IN [V] 5.0 Protective switch OFF Reset latch Restart into normal condition ID( nom)
Datasheet 14 Rev. 1.1, 2011-04-30 HITFET - BTS3800SL Smart low side power switch Protection Functions
7.4 Protection Characteristics
Note: Characteristics show the deviation of parameter at given supply voltage and junction temperature. Typical values show the typical parameters expected from manufacturing. Electrical Characteristics: Protection Tj = -40 °C to +150 °C, Vbat = 8.0 V to 18V, all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) Pos. Parameter Symbol Limit Values Unit Conditions Min. Typ. Max. Over Load Protection 7.4.1 Over load detection current ID(OVL) 0.75 – 1.5 A
7.4.2 Over load shut-down delay time tOFF(OVL) 5–1 5 μs VIN = 5 V
Over Temperature Protection
7.4.3 Thermal shut down temperature Tj(SC) 150 170 200 °C 1)
1) Not subject to production test, specified by design. Over Voltage Protection
7.4.4 Output clamping voltage VDS(AZ) 41 – 50 V I D =10 mA
VIN = 0 V
Datasheet 15 Rev. 1.1, 2011-04-30 HITFET - BTS3800SL Smart low side power switch
Smart low side power switch Datasheet 16 Rev. 1.1, 2011-04-30
8 Package Out lines BTS3800SL
Figure 9 PG-SCT595 (Plastic Green Semiconductor Transistor Package) Green Product (RoHS compliant) To meet the world-wide customer requirements for environmentally friendly products and to be compliant with government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pb-free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020). SCT595-PO V05 1.1 MAX. 0.1 MAX. (2.2) (0.3) (1.45) (0.4)1) (0.23)1) (0.13) 1) Contour of slot depends on profile of gull-wing lead form 1.2-0.05 +0.1 ±0.22.9 B 0.3 -0.05 +0.1 +0.1 0.6 -0.05 0.95 1.9 BM0.25 ±0.1 A 1.6 ±0.10.25 ±0.12.5 0.15-0.06 +0.1
0.2 M A
For further information on packages, please visit our website: http://www.infineon.com/packages.
Datasheet 17 Rev. 1.1, 2011-04-30 HITFET - BTS3800SL Smart low side power switch
Revision History
9 Revision History
Rev. 1.1 2011-04-30 initial released data sheet
81726 Munich, Germany
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