BTS3134N

BTS3134N INFINEON | Alldatasheet

Document overview

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Technical content

Features

/G02 Logic Level Input /G02 Input Protection (ESD) /G02 Thermal shutdown /G02 Overload protection /G02 Short circuit protection /G02 Overvoltage protection /G02 Current limitation /G02 Analog driving possible VPS051631 Application /G02 All kinds of resistive, inductive and capacitive loads in switching or linear applications /G02 µC compatible power switch for 12 V DC applications /G02 Replaces electromechanical relays and discrete circuits General Description N channel vertical power FET in Smart SIPMOS/G03 technology. Fully protected by embedded protection functions. Gate-Driving Unit ESD Overload Protection Over- temperature Protection Short circuit Protection Overvoltage- Protection Current Limitation M Vbb In Source Drain HITFET Pin 1 Pin 2 and 4 (TAB) Pin 3

Maximum Ratings at Tj = 25°C, unless otherwise specified Parameter Symbol Value Unit Drain source voltage VDS 42 V Drain source voltage for short circuit protection Tj = -40...150°C VDS(SC) 30 Continuous input current -0.2V /G04 V IN /G04 10V VIN < -0.2V or VIN > 10V IIN no limit | IIN | /G04 2 mA Operating temperature Tj -40 ...+150 °C Storage temperature Tstg -55 ... +150 Power dissipation TC = 85 °C Ptot 3.8 W Unclamped single pulse inductive energy 1) EAS 500 mJ Load dump protection VLoadDump2) = VA + VS VIN = 0 and 10 V, td = 400 ms, RI = 2 /G01 , RL = 4.5 /G01 , VA = 13.5 V VLD 53.5 V Electrostatic discharge voltage (Human Body Model) according to MIL STD 883D, method 3015.7 and EOS/ESD assn. standard S5.1 - 1993 VESD 2 kV DIN humidity category, DIN 40 040 E IEC climatic category; DIN IEC 68-1 40/150/56 Thermal resistance junction - ambient: @ min. footprint @ 6 cm2 cooling area 3) RthJA 125 K/W junction-soldering point: RthJS 17 K/W 1 Not tested, specified by design. 2VLoaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 3 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for drain connection. PCB mounted vertical without blown air.

Electrical Characteristics

Parameter Symbol Values Unit at Tj = 25°C, unless otherwise specified min. typ. max. Characteristics Drain source clamp voltage VDS(AZ) 42 - 55 V Off-state drain current Tj = -40 ... +150°C VDS = 32 V, VIN = 0 V IDSS - 1.5 10 µA Input threshold voltage ID = 0.7 mA, Tj = 25 °C ID = 0.7 mA, Tj = 150 °C VIN(th) 1.3 0.8 1.7 2.2 V On state input current IIN(on) - 10 30 µA On-state resistance VIN = 5 V, ID = 3 A, Tj = 25 °C VIN = 5 V, ID = 3 A, Tj = 150 °C RDS(on) 100 m/G01 On-state resistance VIN = 10 V, ID = 3 A, Tj = 25 °C VIN = 10 V, ID = 3 A, Tj = 150 °C RDS(on) Nominal load current VDS = 0.5 V, Tj < 150°C, VIN = 10 V, TA = 85 °C ID(Nom) 3 - - A Current limit (active if VDS>2.5 V)1) VIN = 10 V, VDS = 12 V, tm = 200 µs ID(lim) 18 24 30 1Device switched on into existing short circuit (see diagram Determination of ID(lim)). If the device is in on condition and a short circuit occurs, these values might be exceeded for max. 50 µs.

Parameter Symbol Values Unit at Tj = 25°C, unless otherwise specified min. typ. max. Dynamic Characteristics Turn-on time VIN to 90% ID: RL = 4.7 /G01 , VIN = 0 to 10 V, Vbb = 12 V ton - 60 100 µs Turn-off time VIN to 10% ID: RL = 4.7 /G01 , VIN = 10 to 0 V, Vbb = 12 V toff - 60 100 Slew rate on 70 to 50% Vbb: RL = 4.7 /G01 , VIN = 0 to 10 V, Vbb = 12 V -dVDS/dton - 0.3 1.5 V/µs Slew rate off 50 to 70% Vbb: RL = 4.7 /G01 , VIN = 10 to 0 V, Vbb = 12 V dVDS/dtoff - 0.7 1.5 Protection Functions1) Thermal overload trip temperature Tjt 150 175 - °C Input current protection mode IIN(Prot) 80 160 300 µA Input current protection mode Tj = 150 °C IIN(Prot) - 130 300 Unclamped single pulse inductive energy 2) ID = 3 A, Tj = 25 °C, Vbb = 12 V EAS 500 - - mJ Inverse Diode Inverse diode forward voltage IF = 15 A, tm = 250 µs, VIN = 0 V, tP = 300 µs VSD - 1 - V 1Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation. 2 Not tested, specified by design.

S Vbb RL HITFET VZ D S Short circuit behaviourInput circuit (ESD protection) IN t V t IIN t ID t Tj Gate Drive Source/ Ground Input

1 Maximum allowable power dissipation

Ptot = f(TS) resp. Ptot = f(TA) @ RthJA=72 K/W -75 -50 -25 0 25 50 75 100 °C 150 TS ;TA W Ptot 6cm2 max.

2 On-state resistance

RON = f(Tj); ID=3A; VIN=10V -50 -25 0 25 50 75 100 125 °C 175 Tj m/G01 100 RDS(on) typ. max.

3 On-state resistance

RON = f(Tj); ID= 3A; VIN=5V -50 -25 0 25 50 75 100 125 °C 175 Tj m/G01 110 RDS(on) typ. max. 4 Typ. input threshold voltage VIN(th) = f(Tj); ID = 0.7 mA; VDS = 12V -50 -25 0 25 50 75 100 °C 150 Tj 0.2 0.4 0.6 0.8 1.2 1.4 1.6 V VGS(th)

5 Typ. transfer characteristics ID=f(VIN); VDS=12V; TJstart=25°C 0 1 2 3 4 5 6 7 8 V 10 VIN A ID 6 Typ. short circuit current ID(lim) = f(Tj); VDS=12V Parameter: VIN -50 -25 0 25 50 75 100 125 °C 175 Tj A ID Vin=10V 7 Typ. output characteristics ID=f(VDS); TJstart=25°C Parameter: VIN 0 1 2 3 4 V 6 VDS A ID Vin=3V 10V 8 Typ. off-state drain current IDSS = f(Tj) -50 -25 0 25 50 75 100 125 °C 175 Tj µA IDSS typ. max.

9 Typ. overload current ID(lim) = f(t), Vbb=12 V, no heatsink Parameter: Tjstart 0 0.5 1 1.5 2 2.5 3 ms 4 t A ID(lim) -40°C 25°C85°C150°C 10 Typ. transient thermal impedance ZthJA=f(tp) @ 6 cm2 cooling area Parameter: D=tp/T 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 3 s tp -3 10 -2 10 -1 10 0 10 1 10 2 10 K/WZthJA Single pulse 0.01 0.02 0.05 0.1 0.2 D=0.5

11 Determination of ID(lim)

ID(lim) = f(t); tm = 200µs Parameter: TJstart t A ID(lim) -40°C 25°C 85°C 150°C

±0.1 ±0.2 ±0.10.7 321 GPS05560 6.5 acc. to +0.2 DIN 6784 1.6±0.1 15˚ max ±0.040.28 7±0.3 ±0.23.5 0.5 0.1 maxmin BM0.25 B A 2.3 4.6 AM0.25

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