BTS3080TFATMA1 INFINEON | Alldatasheet
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Datasheet 1 Rev. 1.0 www.infineon.com/hitfet 2016-06-01 HITFET - BTS3080TF Smart Low-Side Power Switch
1 Overview
- Single channel device
- Very low output leakage current in OFF state
- Electrostatic discharge protection (ESD)
- Embedded protection functions (see below)
- Green Product (RoHS compliant)
- AEC Qualified
Applications
- Suitable for resistive, induc tive and capacitive loads
- Replaces electromechanical rela ys, fuses and discrete circuits
Description
The BTS3080TF is a 80 m Ω single channel Smart Lo w-Side Power Switch wi thin a PG-TO252-3 package providing embedded protective functi ons. The power transistor is buil t by an N-channel vertical power MOSFET. The device is monolithically inte grated. The BTS3080TF is automotive qualified and is optimized for 12 V automotive applications. Type Package Marking BTS3080TF PG-TO252-3 S3080TF Table 1 Product Summary Operating voltage range V OUT 0 .. 31 V Maximum load voltage VBAT(LD) 40 V Maximum input voltage VIN 5.5 V Maximum On-State resistance at TJ = 150°C, VIN = 5 V RDS(ON) 160 mΩ Nominal load current IL(NOM) 3A Minimum current limitation IL(LIM) 10 A Maximum OFF state load current at TJ ≤85°C IL(OFF)_85 0.6 µA
Datasheet 2 Rev. 1.0 2016-06-01 HITFET - BTS3080TF Smart Low-Side Power Switch Overview Protection Functions
- Over temperature shut-down with automatic-restart
- Active clamp over voltage protection
- C u r r e n t l i m i t a t i o n Detailed Description The device is able to switch all kind of resistive, inductive and capacitive loads, limited by maximum clamping energy and maximum current capabilities. The BTS3080TF offers ESD protection on the IN pin which refers to the Source pin (Ground). The over temperature protection prevents the device from overheating due to overload and/or bad cooling conditions. The temperature information is given by a temperature sensor in the power MOSFET. The BTS3080TF has an auto-restart thermal shut-down function. The device will turn on again, if input is still high, after the measured temperature has dropped below the thermal hysteresis. The over voltage protection can be activated during load dump or indu ctive turn off conditions. The power MOSFET is limiting the drain-source voltage, if it rises above the V OUT(CLAMP).
Datasheet 3 Rev. 1.0 2016-06-01 HITFET - BTS3080TF Smart Low-Side Power Switch Table of Contents
Datasheet 4 Rev. 1.0 2016-06-01 HITFET - BTS3080TF Smart Low-Side Power Switch Block Diagram
2 Block Diagram
BlockDiagram _3 pin.emf ESD Protection
Datasheet 5 Rev. 1.0 2016-06-01 HITFET - BTS3080TF Smart Low-Side Power Switch Pin Configuration
3 Pin Configuration
3.1 Pin Assignment BTS3080TF
Figure 2 Pin Configuration. PG-TO252-3
3.2 Pin Definitions and Functions
3.3 Voltage and current definition
Figure 3 shows all external terms used in this data sheet, with associated convention for positive values. Figure 3 Naming definition of electrical parameters Pin Symbol Function 1I N I n p u t p i n 2,4 OUT Drain, Load connection for power DMOS
3 GND Ground, Source of power DMOS
(top view ) 4 (Tab) VBAT GND IN VBAT VIN IIN GND IGND ZL IL,ID VOUT OUT
Datasheet 6 Rev. 1.0 2016-06-01 HITFET - BTS3080TF Smart Low-Side Power Switch General Product Characteristics
4 General Product Characteristics
4.1 Absolute Maximum Ratings
Table 2 Absolute Maximum Ratings 1) Tj = -40°C to +150°C; all voltages with respect to ground , positive current flowing into pin (unless otherwise specified) Parameter Symbol Values Unit Not e or Test Condition Number Min. Typ. Max. Voltages Output voltage VOUT – – 40 V internally clamped P_4.1.1 Battery voltage for short circuit protection VBAT(SC) –– 3 1 V l = 0 or 5 m RSC = 20 mΩ + RCable RCable = l * 16 mΩ/m LSC = 5 µH + LCable LCable = l * 1 µH/m VIN = 5 V P_4.1.2 Battery voltage for load dump protection VBAT(LD) –– 4 0 V 2) RI = 2 Ω RL = 4.5 Ω tD = 400 ms suppressed pulse P_4.1.4 Input Pin Input Voltage VIN -0.3 – 5.5 V - P_4.1.7 Input current in inverse condition on OUT to GND I IN –– 2 m A 3) VOUT < -0.3 V P_4.1.10 Power Stage Load current | IL |– – IL(LIM) A - P_4.1.11 Energies Unclamped single inductive energy single pulse EAS –– 3 8 m J IL(0) = IL(NOM) VBAT = 13.5 V TJ(0) = 150°C P_4.1.15 Unclamped repetitive inductive energy pulse with 10 k cycles EAR(10k) –– 3 8 m J IL(0) = IL(NOM) VBAT = 13.5 V TJ(0) = 105°C P_4.1.23 Unclamped repetitive inductive energy pulse with 100 k cycles EAR(100k) –– 3 0 m J IL(0) = IL(NOM) VBAT = 13.5 V TJ(0) = 105°C P_4.1.27 Unclamped repetitive inductive energy pulse with 1 M cycles EAR(1M) –– 2 4 m J IL(0) = IL(NOM) VBAT = 13.5 V TJ(0) = 105°C P_4.1.31
Datasheet 7 Rev. 1.0 2016-06-01 HITFET - BTS3080TF Smart Low-Side Power Switch General Product Characteristics Notes 1. Stresses above the ones listed he re may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2. Integrated protection functions are designed to preven t IC destruction under fault conditions described in the data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are not designed for continuous repetitive operation.
4.2 Functional Range
Operating temperature TJ -40 – +150 °C – P_4.1.37 Storage temperature TSTG -55 – +150 °C – P_4.1.38 ESD Susceptibility ESD susceptibility (all pins) VESD -4 – 4 kV HBM 4) P_4.1.39 ESD susceptibility OUT-pin to GND VESD -10 – 10 kV HBM 4) P_4.1.40 ESD susceptibility VESD -2 – 2 KV CDM 5) P_4.1.41 1) Not subject to production test, specified by design. 2) VBAT(LD) is setup without the DUT connected to the generator per ISO 7637-1; RI is the internal resistance of the load dump test pulse generator; tD is the pulse duration time for load dump pulse (pulse 5) according ISO 7637-1, -2. 3) Maximum allowed value. Consider also inverse inpu t current in inverse condition P_8.3.7 in Chapter 8 4) ESD susceptibility, HBM accordin g to ANSI/ESDA/JEDEC JS001 (1.5 kΩ, 100 pF) Table 3 Functional Range 1) Please refer to “Electrical Characteristics” on Page 18 for test conditions Parameter Symbol Values Unit Note or Test Condition Number Min. Typ. Max. Battery Voltage Range for Nominal Operation VBAT(NOR) 6.0 – 18.0 V – P_4.2.1 Extended Battery Voltage Range for Operation VBAT(EXT) 0 – 31 V parameter deviations possible P_4.2.2 Input Voltage Range for Nominal Operation VIN(NOR) 3.0 – 5.5 V – P_4.2.3 Junction Temperature TJ -40 – 150 °C – P_4.2.5 Table 2 Absolute Maximum Ratings 1) (cont’d) Tj = -40°C to +150°C; all voltages with respect to ground , positive current flowing into pin (unless otherwise specified) Parameter Symbol Values Unit Not e or Test Condition Number Min. Typ. Max.
Datasheet 8 Rev. 1.0 2016-06-01 HITFET - BTS3080TF Smart Low-Side Power Switch General Product Characteristics Note: Within the functional range the IC operates as described in the circuit description. The electrical characteristics are specified within the conditions given in the related electrical characteristics table.
4.3 Thermal Resistance
Note: This thermal data was generated in accordance with JEDEC JESD51 standards. For more information, go to www.jedec.org.
4.3.1 PCB set up
The following PCB set up was implemented to determine the transient thermal impedance1) Figure 4 Cross section JEDEC2s2p 1) Not subject to production test, specified by design Table 4 Thermal Resistance PG-TO252-3 Parameter Symbol Values Unit Note or Test Condition Number Min. Typ. Max. Junction to Soldering Point RthJSP –3 . 7 –K / W 1) 2) 1) Not subject to production test, specified by design 2) Specified RthJSPvalue is simulated at natural convection on a cold plate setup (all pins are fixed to ambient temperature). T A = 85°C. Device is loaded with 1 W power. P_4.3.3 Junction to Ambient (2s2p) RthJA(2s2p) –2 7 –K / W 1) 3) 3) Specified RthJA value is according to Jedec JESD51-2,-5,-7 at natural convection on FR4 2s2p board; The product (Chip+Package) was simulated on a 76.2 x 114.3 x 1.5 mm board with 2 inner copper layers (2 x 70 µm Cu, 2 x 35 µm Cu). Where applicable a thermal via array under the ex posed pad contacted the first inner copper layer. T A = 85°C, Device is loaded with 1 W power. P_4.3.7 Junction to Ambient (1s0p+600 mm2 Cu) RthJA(1s0p) –4 1 –K / W 1) 4) 4) Specified RthJA value is according to Jedec JESD51-2,-5,-7 at natural convection on FR4 1s0p board; The product (Chip+Package) was simulated on a 76.2 x 114.3 x 1.5 mm board with additional heatspreading copper area of 600 mm2 and 70 µm thickness. TA = 85°C, Device is loaded with 1 W power. P_4.3.11 1) (*) means percentual Cu me talization on each layer 70µm modelled (traces) 35µm, 100% metalization* 1,5 mm 70µm, 5% metalization*
Datasheet 9 Rev. 1.0 2016-06-01 HITFET - BTS3080TF Smart Low-Side Power Switch General Product Characteristics Figure 5 Cross section JEDEC1s0p Figure 6 PCB layout
4.3.2 Transient Thermal Impedance
70µm modelled (traces, cooling area) 1,5 mm 70µm; 5% metalization* JEDEC 1s0p / 600mm² JEDEC 1s0p / footprint JEDEC 2s2p Detail:Solder Pads Vias
Datasheet 11 Rev. 1.0 2016-06-01 HITFET - BTS3080TF Smart Low-Side Power Switch Power Stage
5 Power Stage
5.1 Output On-state Resistance
The on-state resistance depends on the junction temperature TJ and on the applied input voltage. Figure 9 show this dependencies in terms of temperature and voltage for the typical on-state resistance RDS(ON). The behavior in reverse polarity is described in“Reverse Current capability” on Page 13 Figure 9 Typical On -State Resistance, RDS(ON) = f(TJ), VIN = 3 V; VIN = 5 V
5.2 Resistive Load Output Timing
Figure 10 shows the typical timing when switching a resistive load. Figure 10 Definition of Power Output Timing for Resistive Load 120 160 200 - 4 0 - 2 00 2 04 06 08 0 1 0 0 1 2 0 1 4 0 RDS(ON) [m/g58] TJ [°C] tVOUT VBAT Switching.e t 10 % 90 % tON tDON tOFF tDOFF VIN VIN(TH) 50 % -(ΔV/Δt)ON (ΔV/Δt)OFF tF tR
Datasheet 12 Rev. 1.0 2016-06-01 HITFET - BTS3080TF Smart Low-Side Power Switch Power Stage
5.3 Inductive Load
5.3.1 Output Clamping
When switching off inductive loads with low side switches, the Drain-Source voltage VOUT rises above battery potential, because the inductance intends to continue driving the current. To prevent unwanted high voltages the device has a voltage clamping mechanism to keep the voltage at VOUT(CLAMP). During this clamping operation mode the device heats up as it dissipates the energy from the inductance. Therefore the maximum allowed load inductance is limited. See Figure 11 and Figure 12 for more details. Figure 11 Output Clamp Circuitry Figure 12 Switching an Inductive Load GND ( DMOS Source) OUT ( DMOS Drain IGND VBAT ZL IL VOUT t tVOUT VBAT Id i O C l f t IOUT VOUT(CLAMP) VIN
Datasheet 13 Rev. 1.0 2016-06-01 HITFET - BTS3080TF Smart Low-Side Power Switch Power Stage
5.3.1.1 Maximum Load Inductance
While demagnetization of inductive loads, energy has to be dissipated by the BTS3080TF. This energy can be calculated by the following equation: (5.1) Following equation simplifies under the assumption of RL = 0 (5.2) For maximum single avalanche energy please also refer to EAS value in “Energies” on Page 6. Figure 13 Maximum load inductance for single pulse L = f(IL), TJ(0) = TJ, start = 150°C, VBAT = 13.5 V
5.4 Reverse Current capability
A reverse battery situation means the OUT pin is pulled below GND potentials to -VBAT via the load ZL. L L CLAMPOUTBAT LL L CLAMPOUTBAT CLAMPOUT R LIVV IR R VVV × +⎟⎟ )( 1lnE −−×= CLAMPOUTBAT BAT L VV VLIE 100 1000 0,1 1 10 L [mH] IL [A]
Datasheet 14 Rev. 1.0 2016-06-01 HITFET - BTS3080TF Smart Low-Side Power Switch Power Stage In this situation the load is driven by a current th rough the intrinsic body diode of the BTS3080TF. During Reverse Battery all protection functions like current limitation, over temperature shut down and over voltage clamping are not available. The device is dissipating a power loss which is defined by the driven current and the voltage drop on the DMOS reverse body diode “-VOUT”.
5.5 Inverse Current capability
An inverse current situation means the OUT pin is pulled below GND potential by current flowing from GND to OUT (for example in half-bridge configuration and inductive load using freewheeling via the low side path). In this situation the load is driven by a current through the intrinsic body diode (device off) of the BTS3080TF. During Inverse operation a ll protection functions like current limi tation, over temperature shut-down and over voltage clamping are not available. The device is dissipating a power loss which is defined by the driven current and the voltage drop on the DMOS reverse body diode “-VOUT”. Input current behavior during inverse condition on Output Please note that during inverse current on drain an increased input current can flow. To limit this current it is needed to place a resistor (RIN) in line with the input, also to prevent the microcontroller I/O pins from latching up in this case. The value of this resistor is a comp romise of input voltage level in normal operation and maximum allowed device input current IIN or I/O current (for example of microcontroller). (5.3) with IIN(max) = 2 mA (see also “Absolute Maximum Ratings” on Page 6) allow for the device; VOHµC(max) maximum high level voltage of the control signal (microcontroller I/O)
5.6 Characteristics
Please see “Power Stage” on Page 11 for electrical characteristic table. (max) (max) (min) IN OHuC IN I VR =
Datasheet 15 Rev. 1.0 2016-06-01 HITFET - BTS3080TF Smart Low-Side Power Switch Protection Functions
6 Protection Functions
The device provides embedded protection functions. Integrated protection functions are designed to prevent IC destruction under fault conditions described in the datasheet. Fault conditions are considered as “outside” normal operation. Protection functions are not designed for continuous repetitive operation.
6.1 Over Voltage Clamping on OUTput
The BTS3080TF is equipped with a volt age clamp circuitry that keeps the drain-source (OUT to GND) voltage VDS at a certain level VOUT(CLAMP). The over voltage clamping is overruling the other protection functions. Power dissipation has to be limited to not exceed the maximum allowed junction temperature. This function is also used in terms of inductive clamping. Please see also Chapter 5.3.1 for more details.
6.2 Thermal Protection
The device is protected against over temperature due to overload and / or bad cooling conditions. To ensure this a temperature sensor is located in the power MOSFET. The BTS3080TF has a thermal protection function with automatic restart. After the device has switched off due to over temperature the device will stay off until the junction temperature has dropped down below the thermal hysteresis “Thermal Protection” on Page 15. Figure 14 Thermal protective switch OFF scenario with thermal restart
6.3 Short Circuit Protection / Current limitation
The condition short circuit is an over load condition to the device. If th e load current reaches the limitation value of IL(LIM) the device limits the current and starts heating up. When the thermal shutdown temperature is reached, the device turns off. The time from the beginning of curr ent limitation until the over temper ature switch off depends strongly on the cooling conditions. If input is still high, the device will turn on agai n after the measured temperature has dropped below the thermal hysteresis. Figure 15 shows this simplified behavior. IN t Thermal shutdown t Tj TJ(SD) ΔTJ(SD)_HYS Thermal _ fault_ restart.emf VOUT VBAT t Thermal restart
Datasheet 16 Rev. 1.0 2016-06-01 HITFET - BTS3080TF Smart Low-Side Power Switch Protection Functions Figure 15 Short circuit protection via current limitation and over temperature switch off with auto- restart
6.4 Characteristics
Please see “Protection Functions” on Page 15 for electrical characteristic table. IN tTj TJ(SD) Short_cir cuit_restar t.emf Turn off due t o over temperat ure ID IL(LIM ) Restart into short circuit after cooling down Restart into normal load condition Vba t/Zsc ΔTJ_HYS t t Occurrence of O ver current or high oh mic S hort circuit
Datasheet 17 Rev. 1.0 2016-06-01 HITFET - BTS3080TF Smart Low-Side Power Switch Input Stage
7 Input Stage
7.1 Input Circuit
Figure 16 shows the input circuit of the BT S3080TF. In case of open or floa ting input pin, the device will automatically switch off and remain off. An ESD Zener structure protects the input circuit against ESD pulses. Figure 16 Simplified Input circuitry
7.2 Characteristics
Please see “Input Stage” on Page 21 for electrical characteristic table. IN GND ESD protection circuit Input circuit.emf
Datasheet 18 Rev. 1.0 2016-06-01 HITFET - BTS3080TF Smart Low-Side Power Switch
Electrical Characteristics
8 Electrical Characteristics
8.1 Power Stage
Please see Chapter “Power Stage” on Page 11 for parameter description and further details. Table 5 Electrical Characteristics: Power Stage Tj = -40°C to +150°C, V BAT = 6 V to 18 V, all voltages with respect to ground, positive curr ent flowing into pin (unless otherwise specified) Parameter Symbol Values Unit Note or Test Condition Number Min. Typ. Max. Power Stage On-State resistance at hot temperature (150°C) RDS(ON)_150 – 134 160 m Ω TJ = 150°C; VIN = 5 V; IL = IL(NOM) P_8.1.3 On-State resistance at ambient temperature (25°C) RDS(ON)_25 –6 9 – m Ω TJ = 25°C; VIN = 5 V; IL = IL(NOM) P_8.1.7 Nominal load current IL(NOM) –3– A 1) TJ < 150°C; TA = 85°C VIN = 5 V P_8.1.27 OFF state load current, Output leakage current IL(OFF)_85 ––0 . 6 µ A 2) VBAT = 13.5 V; VIN = 0 V; TJ ≤85°C P_8.1.31 OFF state load current, Output leakage current IL(OFF)_150 –0 . 5 2 µ A VBAT = 18 V; VIN = 0 V; TJ = 150°C P_8.1.35 Reverse body diode forward voltage -VOUT –0 . 8 1 . 1 V IL = -IL(NOM); VIN = 0 V P_8.1.45
Datasheet 19 Rev. 1.0 2016-06-01 HITFET - BTS3080TF Smart Low-Side Power Switch
8.2 Protection
Please see Chapter “Protection Functions” on Page 15 for parameter description and further details. Note: Integrated protection function s are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are not designed for continuous repetitive operation Dynamic characteristics - switching times single pulseVBAT = 13.5 V, RL = 4.7Ω; for definition details see Figure 10 “Definition of Power Output Timing for Resistive Load” on Page 11 Turn-on time tON 35 75 115 µs 3) VIN = 0 V to 5 V; VOUT = 10% VBAT P_8.1.46 Turn-off time tOFF 70 135 210 µs 4) VIN = 5 V to 0 V; VOUT = 90% VBAT P_8.1.47 Turn-on delay time tDON 51 5 2 5 µ s VIN = 0 V to 5 V; VOUT = 90% VBAT P_8.1.48 Turn-off delay time tDOFF 40 75 120 µs VIN = 5 V to 0 V; VOUT = 10% VBAT P_8.1.49 Fall time, Falling output voltage (turn- on) tF 30 60 90 µs VIN = 0 V to 5 V; VOUT = 90% VBAT to VOUT = 10% VBAT P_8.1.50 Rise time, Rising output voltage tR 30 60 90 µs VIN = 5 V to 0 V; VOUT = 10% VBAT to VOUT = 90% VBAT P_8.1.51 Turn-on Slew rate -(ΔV/Δt)ON 0.22 0.45 0.65 V/µs 5) VOUT = 90% VBAT to VOUT = 50% VBAT P_8.1.52 Turn-off Slew rate (ΔV/Δt)OFF 0.22 0.45 0.65 V/µs 6) VOUT = 50% VBAT to VOUT = 90% VBAT P_8.1.53 1) Not subject to production test, calculated by RthJA (JEDEC 2s2p, PCB) and RDS(ON) 2) Not subject to production test, specified by design; 3) Not subject to production test, calcul ated with delay time ON and fall time 4) Not subject to production test, calculated with delay time OFF and rise time 5) Not subject to production test, calculated slew rate between 90% and 50% VOUT; 6) Not subject to production test, calculated slew rate between 50% and 90% VOUT; Table 5 Electrical Characteristics: Power Stage (cont’d) Tj = -40°C to +150°C, V BAT = 6 V to 18 V, all voltages with respect to ground, positive curr ent flowing into pin (unless otherwise specified) Parameter Symbol Values Unit Note or Test Condition Number Min. Typ. Max.
Datasheet 20 Rev. 1.0 2016-06-01 HITFET - BTS3080TF Smart Low-Side Power Switch Table 6 Electrical Characteristics: Protection Tj = -40°C to +150°C, V BAT = 6 V to 18 V, all voltages with respect to ground, positive curr ent flowing into pin (unless otherwise specified) Parameter Symbol Values Unit Note or Test Condition Number Min. Typ. Max. Thermal Protection Thermal shut down junction temperature TJ(SD) 150 175 – °C 1) 3V < VIN < 5.5 V 1) Not subject to production test, specified by design. P_8.2.1 Thermal hysteresis ΔTJ_HYS –1 5 – K 1) P_8.2.3 Overvoltage Protection Drain clamp voltage V OUT(CLAMP) 40 45 – V VIN = 0 V; ID = 6 mA P_8.2.11 Current limitation (see also Figure 15) Current limitation IL(LIM) 10 15 20 A VIN = 5 V; P_8.2.15
Datasheet 21 Rev. 1.0 2016-06-01 HITFET - BTS3080TF Smart Low-Side Power Switch
8.3 Input Stage
Please see Chapter “Input Stage” on Page 17 for description and further details. Table 7 Electrical Characteristics: Input Tj = -40°C to +150°C, VBAT = 6 V to 18 V, all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) Parameter Symbol Values Unit Note or Test Condition Number Min. Typ. Max. Input Input Current, normal ON state IIN(ON) – 82 110 µA VIN = 5.0 V P_8.3.1 Input Current, protection mode IIN(PROT) – 165 220 µA VIN = 5.0 V P_8.3.5 Input current, inverse condition on OUT to GND IIN(-VOUT) – 15 – mA 1) 2) VOUT < -0.3 V; -0.3 V ≤ VIN <5.5 V 1) Not subject to production test, specified by design. 2) Input current must not exceed the ma ximum ratings in Chapter 4, P_4.1.10 P_8.3.7 Input pull down current IIN-GND 10 – – µA 3) VIN = VIN(TH) 3) Not subject to production test, specified by design. P_8.3.8 Input Voltage on-threshold VIN(TH) 0.8 2.3 3 V IL =0.6 mA; Power DMOS active P_8.3.9
Datasheet 22 Rev. 1.0 2016-06-01 HITFET - BTS3080TF Smart Low-Side Power Switch Characterization Results
9 Characterization Results
Typical performance characteristics.
9.1 Power Stage
Figure 17 Typical RDS(ON) vs. VIN @ Tj = -40 ... 150°C, IL = IL(NOM) 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 0.18 3 3.5 4 4.5 5 5.5 RDS(ON) [Ω] VIN [V] 150°C 85°C 25°C -40°C
Datasheet 32 Rev. 1.0 2016-06-01 HITFET - BTS3080TF Smart Low-Side Power Switch Characterization Results Figure 36 Typical -( ΔV/Δt)ON, (ΔV/Δt)OFF vs. TJ @ VIN =5V 0.1 0.2 0.3 0.4 0.5 0.6 -40 25 85 150 -(ΔV/Δt)ON, (ΔV/Δt)OFF [V/us] TJ [°C] Slew rate on Slew rate off
Datasheet 33 Rev. 1.0 2016-06-01 HITFET - BTS3080TF Smart Low-Side Power Switch Characterization Results
9.2 Protection
Figure 37 Typical VOUT(CLAMP) vs. TJ @ IL =6m A Figure 38 Typical Il(LIM) vs. VBAT @ TJ = -40 ... 150°C, VIN =3 V a n d 5V -40 25 85 150 VOUT(CLAMP) [V] TJ [°C] 6 1 11 62 12 63 1 IL(LIM) [A] VBAT [V] 5V - -40°C 5V - 25°C 5V - 85°C 5V - 150°C 3V - -40°C 3V -25°C 3V - 85°C 3V - 150°C
Datasheet 34 Rev. 1.0 2016-06-01 HITFET - BTS3080TF Smart Low-Side Power Switch Characterization Results
9.3 Input Stage
Figure 39 Typical VIN(TH) vs. TJ @ IL =0 . 6m A Figure 40 Typical IIN(ON) vs. VIN @ TJ = -40 ... 150°C, IL = IL(NOM) 0.5 1.5 2.5 -40 25 85 150 VIN(TH) [V] Vth_rising Vth_falling TJ [°C] 0.0E+00 2.0E-05 4.0E-05 6.0E-05 8.0E-05 1.0E-04 1.2E-04 1.4E-04 1.6E-04 3 3.5 4 4.5 5 5.5 IIN(ON) [A] 150°C 85°C 25°C -40°C VIN [V]
Datasheet 35 Rev. 1.0 2016-06-01 HITFET - BTS3080TF Smart Low-Side Power Switch Characterization Results Figure 41 Typical IIN(PROT) vs. VIN @ TJ = -40 ... 150°C, IL = IL(NOM) 0.0E+00 2.0E-05 4.0E-05 6.0E-05 8.0E-05 1.0E-04 1.2E-04 1.4E-04 1.6E-04 1.8E-04 2.0E-04 3 3.5 4 4.5 5 5.5 150°C 85°C 25°C -40°C VIN [V] IIN(PROT) [A]
Datasheet 36 Rev. 1.0 2016-06-01 HITFET - BTS3080TF Smart Low-Side Power Switch
Application Information
Note: The following information is given as a hint for the implementation of the device only and shall not be regarded as a description or warranty of a certain functionality, condition or quality of the device.
10.1 Application Diagram
An application example with the BTS3080TF is shown below. Figure 42 Application example circuitry Recommended values: RIN =3 . 3kΩ (VIN =5V ) Note: This is a very simplified example of an applicatio n circuit. The function must be verified in the real application. VBAT application_DPAK3.emf RIN Voltage Regulator IN OUT Load I/O PWM Micro controller GND VDD OUT GND IN BTS 3xxxTF
Datasheet 37 Rev. 1.0 2016-06-01 HITFET - BTS3080TF Smart Low-Side Power Switch Package Outlines Figure 43 PG-TO252-3-313 (Outline Package) Green Product (RoHS compliant) To meet the world-wide customer requirements for en vironmentally friendly products and to be compliant with government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pb-free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020). -0.056.5 +0.15 A ±0.59.98 6.22 -0.2 1 ±0.1 3.7 ±0.150.8 0.15 MAX. ±0.1per side 3 x 0.75 2.28 4.57 +0.08 -0.040.5 2.3 -0.10 +0.05 B 1.3 +0.08 -0.040.5 0...0.15 BA0.25 M 0.1 (4.24) 0.4 -0.01 +0.200.9 B PG-TO252-3-313-PO V02 1) +0.2 mm mold flash. All metal surfaces tin plated, except area of cut. ±0.15.4 (5) 0.5 For further information on alternative packages, please visit our website: http://www.infineon.com/packages. Dimensions in mm
Datasheet 38 Rev. 1.0 2016-06-01 HITFET - BTS3080TF Smart Low-Side Power Switch
Revision History
Rev. 1.0 2016-06-01 Datasheet released
Trademarks of Infineon Technologies AG µHVIC™, µIPM™, µPFC™, AU-ConvertIR™, AURIX™ , C166™, CanPAK™, CIPOS™, CIPURSE™, CoolDP ™, CoolGaN™, COOLiR™, CoolMOS™, CoolSET™, CoolSiC™, DAVE™, DI-POL™, DirectFET™, DrBlade™, EasyPIM™, EconoBRIDGE™, Ec onoDUAL™, EconoPACK™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™, Ga NpowIR™, HEXFET™, HITFET™, HybridPACK™, iMOTION™, IRAM™, ISOFACE™, IsoPACK™, LEDrivIR™, LI TIX™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, O PTIGA™, OptiMOS™, ORIGA™, PowIRaudio™, PowIRStage™, PrimePACK™, PrimeSTACK™, PR OFET™, PRO-SIL™, RASIC™, REAL 3™, SmartLEWIS™, SOLID FLAS H™, SPOC™, StrongIRFET™, SupIRBuck™, TEMPFET™, TRENCHSTOP™, TriCore™, UHVIC™, XHP™, XMC™. Trademarks updated November 2015 Other Trademarks All referenced product or service names and trademarks are the property of their respective owners. Edition 2016-06-01 Published by Infineon Technologies AG
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