BTS3080EJ

BTS3080EJ INFINEON | Alldatasheet

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Technical content

Datasheet 1 Rev. 1.0 www.infineon.com/hitfet 2016-09-12 HITFET - BTS3080EJ Smart Low-Side Power Switch

1 Overview

• Single channel device
• Very low output leakage current in OFF state
• Electrostatic discharge protection (ESD)
• Embedded protection functions (see below)
• ELV compliant package
• Green Product (RoHS compliant)
• AEC Qualified

Applications

• Suitable for resistive, induc tive and capacitive loads
• Replaces electromechanical rela ys, fuses and discrete circuits

Description

The BTS3080EJ is a 80 m Ω single channel Smart Low-Side Power Switch with in a PG-TDSO8-31 package providing embedded protective functi ons. The power transistor is buil t by an N-channel vertical power MOSFET. The device is monolithically inte grated. The BTS3080EJ is automotive qualified and is optimized for 12 V automotive applications. Type Package Marking BTS3080EJ PG-TDSO8-31 S3080EJ Table 1 Product Summary Operating voltage range V OUT 0 .. 31 V Maximum load voltage VBAT(LD) 40 V Maximum input voltage VIN 5.5 V Maximum On-State resistance at TJ = 150°C,VIN = 5 V RDS(ON) 160 mΩ Nominal load current IL(NOM) 3 A Minimum current limitation IL(LIM) 10 A Maximum OFF state load current at TJ ≤85°C IL(OFF) 2µ A

Datasheet 2 Rev. 1.0 2016-09-12 HITFET - BTS3080EJ Smart Low-Side Power Switch Overview Diagnostic Functions

• open-drain status output Protection Functions
• Over temperature shut-down with automatic-restart
• Active clamp over voltage protection
• C u r r e n t l i m i t a t i o n Detailed Description The device is able to switch all kind of resistive, inductive and capacitive loads, limited by maximum clamping energy and maximum current capabilities. The BTS3080EJ offers ESD protection on the IN pin which refers to the Source pin (Ground). The over temperature protection prevents the device from overheating due to overload and/or bad cooling conditions. The temperature information is given by a temperature sensor in the power MOSFET. The BTS3080EJ has an auto-restart thermal shut-down function. The device will turn on again, if input is still high, after the measured temperature has dropped below the thermal hysteresis. The over voltage protection can be activated during load dump or indu ctive turn off conditions. The power MOSFET is limiting the drain-source voltage, if it rises above the VOUT(CLAMP).

Datasheet 3 Rev. 1.0 2016-09-12 HITFET - BTS3080EJ Smart Low-Side Power Switch Table of Contents

Datasheet 4 Rev. 1.0 2016-09-12 HITFET - BTS3080EJ Smart Low-Side Power Switch

Datasheet 5 Rev. 1.0 2016-09-12 HITFET - BTS3080EJ Smart Low-Side Power Switch Block Diagram

2 Block Diagram

Datasheet 6 Rev. 1.0 2016-09-12 HITFET - BTS3080EJ Smart Low-Side Power Switch Pin Configuration

3 Pin Configuration

3.1 Pin Assignment BTS3080EJ

Figure 2 Pin Configuration

3.2 Pin Definitions and Functions

1 IN Input pin

2 NC not connected

3 STATUS Open-drain status feedback (low active)

4 NC not connected

5 NC not connected

6, 7, 8 GND Ground, Source of power DMOS 1) All GND pins must be connected together. cooling tab OUT Drain, Load connection for power DMOS

Datasheet 7 Rev. 1.0 2016-09-12 HITFET - BTS3080EJ Smart Low-Side Power Switch Pin Configuration

3.3 Voltage and current definition

Figure 3 shows all external terms used in this datasheet, with associated convention for positive values. Figure 3 Naming definition of electrical parameters VBAT GND T4 i f IN VBAT VIN IIN GND ZL VOUT, VDS OUT IDD VDD VDD STATUS I STATUS RSTATUS I L, ID VSTATUS

Datasheet 8 Rev. 1.0 2016-09-12 HITFET - BTS3080EJ Smart Low-Side Power Switch General Product Characteristics

4 General Product Characteristics

4.1 Absolute Maximum Ratings

Table 2 Absolute Maximum Ratings 1) Tj = -40°C to +150°C; all voltages with respect to ground , positive current flowing into pin (unless otherwise specified) Parameter Symbol Values Unit Note or Test Condition Number Min. Typ. Max. Voltages Output voltage VOUT – – 40 V internally clamped P_4.1.1 Battery voltage for short circuit protection VBAT(SC) ––3 1 V l = 0 or 5 m RSC = 20 mΩ + RCable RCable = l * 16 mΩ/m LSC = 5 µH + LCable LCable = l * 1 µH/m VIN = 5 V P_4.1.2 Battery voltage for load dump protection VBAT(LD) ––4 0 V 2) RI = 2 Ω RL = 4.5 Ω tD = 400 ms suppressed pulse P_4.1.4 Input Pin Input Voltage VIN -0.3 – 5.5 V – P_4.1.7 Input current in inverse condition on OUT to GND) I IN ––2 m A 3) VOUT < -0.3 V P_4.1.10 Status Pin Status Voltage VSTATUS -0.3 – 5.5 V – P_4.1.11 Status current ISTATUS – – 5 mA -0.3 V < VSTATUS < 5.5 V P_4.1.12 Status current in inverse current condition on STATUS ISTATUS_L -1 – – mA VSTATUS < -0.3 V P_4.1.13 Power Stage Load current | IL |– – IL(LIM) A– P_4.1.14 Energies Unclamped single inductive energy single pulse EAS ––3 5 m J IL(0) = IL(NOM) VBAT = 13.5 V TJ(0) = 150°C P_4.1.20 Unclamped repetitive inductive energy pulse with 10k E AR(10k) ––3 8 m J IL(0) = IL(NOM) VBAT = 13.5 V TJ(0) = 105°C P_4.1.32

Datasheet 9 Rev. 1.0 2016-09-12 HITFET - BTS3080EJ Smart Low-Side Power Switch General Product Characteristics Notes 1. Stresses above the ones listed he re may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2. Integrated protection functions are designed to preven t IC destruction under fault conditions described in the data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are not designed for continuous repetitive operation. Unclamped repetitive inductive energy pulse with 100k cycles E AR(100k) ––3 0 m J IL(0) = IL(NOM) VBAT = 13.5 V TJ(0) = 105 °C P_4.1.38 Unclamped repetitive inductive energy pulse with EAR(1M) ––2 4 m J IL(0) = IL(NOM) VBAT = 13.5 V TJ(0) = 105 °C P_4.1.44 Temperatures Operating temperature TJ -40 – +150 °C – P_4.1.52 Storage temperature TSTG -55 – +150 °C – P_4.1.53 ESD Susceptibility ESD susceptibility (all pins) VESD -3 – 3 kV HBM 4) P_4.1.54 ESD susceptibility OUT-pin to GND VESD -10 – 10 kV HBM 5) P_4.1.55 ESD susceptibility VESD -1 – 1 kV CDM 6) P_4.1.56 ESD susceptibility non- corner pins VESD -1 – 1 kV CDM 7) P_4.1.57 1) Not subject to production test, specified by design. 2) VBAT(LD) is setup without the DUT connected to the generator per ISO 7637-1; RI is the internal resistance of the load dump test pulse generator; tD is the pulse duration time for load dump pulse (pulse 5) according ISO 7637-1, -2. 3) Maximum allowed value. Consider also in verse input current in inverse condition IIN(-VOUT) in Chapter 9 4) ESD susceptibility, HBM accordin g to ANSI/ESDA/JEDEC JS001 (1.5 kΩ, 100 pF) 5) ESD susceptibility, HBM accordin g to ANSI/ESDA/JEDEC JS001 (1.5 kΩ, 100 pF) Table 2 Absolute Maximum Ratings 1) (cont’d) Tj = -40°C to +150°C; all voltages with respect to ground , positive current flowing into pin (unless otherwise specified) Parameter Symbol Values Unit Note or Test Condition Number Min. Typ. Max.

Datasheet 10 Rev. 1.0 2016-09-12 HITFET - BTS3080EJ Smart Low-Side Power Switch General Product Characteristics

4.2 Functional Range

Note: Within the functional range the IC operates as described in the circuit description. The electrical characteristics are specified within the conditions given in the related electrical characteristics table. Table 3 Functional Range 1) Please refer to “Electrical Characteristics” on Page 22 for test conditions 1) Not subject to production test, specified by design Parameter Symbol Values Unit Note or Test Condition Number Min. Typ. Max. Battery Voltage Range for Nominal Operation Extended Battery Voltage Range for Operation VBAT(EXT) 0 – 31 V parameter deviations possible P_4.2.2 Input Voltage Range for Nominal Operation VIN(NOR) 3.0 – 5.5 V – P_4.2.3 Junction Temperature TJ -40 – 150 °C – P_4.2.5

Datasheet 11 Rev. 1.0 2016-09-12 HITFET - BTS3080EJ Smart Low-Side Power Switch General Product Characteristics

4.3 Thermal Resistance

Note: This thermal data was generated in accordance with JEDEC JESD51 standards. For more information, go to www.jedec.org.

4.3.1 PCB set up

The following PCB set up was implemented to determine the transient thermal impedance1) Figure 4 Cross section JEDEC2s2p Table 4 Thermal Re sistance PG-TDSO8-31 Parameter Symbol Values Unit Note or Test Condition Number Min. Typ. Max. Junction to Soldering Point RthJSP –4 . 1 –K / W 1) 2) 1) Not subject to production test, specified by design 2) Specified RthJSP value is simulated at natural convection on a cold plate setup (all pins are fixed to ambient temperature). T A = 85°C. Device is loaded with 1 W power. P_4.3.5 Junction to Ambient (2s2p) RthJA(2s2p) – 37 – K/W 1) 3) 3) Specified RthJA value is according to Jedec JESD51-2,-5,-7 at natural convection on FR4 2s2p board; The product (Chip + Package) was simulated on a 76.2 x 114.3 x 1.5 mm board with 2 inner copper layers (2 x 70 µm Cu, 2 x 35 µm Cu). Where applicable a thermal via array under the ex posed pad contacted the first inner copper layer. TA = 85°C, Device is loaded with 1 W power. P_4.3.11 Junction to Ambient (1s0p+600 mm2 Cu) RthJA(1s0p) –4 8 –K / W 1) 4) 4) Specified RthJA value is according to Jedec JESD51-2,-5,-7 at natural convection on FR4 1s0p board; The product (Chip + Package) was simulated on a 76.2 x 114.3 x 1.5 mm board with additional heatspreading copper area of 600 mm2 and 70 µm thickness. TA = 85°C, Device is loaded with 1 W power. P_4.3.17 Junction to Ambient (1s0p+300 mm2 Cu) RthJA(1s0p) –5 8 –K / W 1) 5) 5) Specified RthJA value is according to Jedec JESD51-2,-5,-7 at natural convection on FR4 1s0p board; The product (Chip + Package) was simulated on a 76.2 x 114.3 x 1.5 mm board with additional heatspreading copper area of 300 mm2 and 70 µm thickness. TA = 85°C, Device is loaded with 1 W power. P_4.3.23 1) (*) means percentual Cu me talization on each layer 70µm modelled (traces) 35µm, 100% metalization* 1,5 mm 70µm, 5% metalization*

Datasheet 12 Rev. 1.0 2016-09-12 HITFET - BTS3080EJ Smart Low-Side Power Switch General Product Characteristics Figure 5 Cross section JEDEC1s0p Figure 6 PCB layout

4.3.2 Transient Thermal Impedance

70µm modelled (traces, cooling area) 1,5 mm 70µm; 5% metalization*

Datasheet 14 Rev. 1.0 2016-09-12 HITFET - BTS3080EJ Smart Low-Side Power Switch Power Stage

5 Power Stage

5.1 Output On-state Resistance

The on-state resistance depends on the junction temperature TJ. The Figure below show this dependencies in terms of temperature and voltage for the typical on-state resistance RDS(ON). The behavior in reverse polarity is described in“Reverse Current capability” on Page 16 Figure 9 Typical On -State Resistance, RDS(ON) = f(TJ), VIN = 3 V; VIN = 5 V

5.2 Resistive Load Output Timing

Figure 10 shows the typical timing when switching a resistive load. Figure 10 Definition of Power Output Timing for Resistive Load 120 160 200 - 4 0 - 2 00 2 04 06 08 0 1 0 0 1 2 0 1 4 0 RDS(ON) [m/g58] TJ [°C] tVOUT VBAT Switching. t 10 % 90 % tON tDON tOFF tDOFF VIN VIN(TH) 50 % -(ΔV/Δt)ON (ΔV/Δt)OFF tF tR

Datasheet 15 Rev. 1.0 2016-09-12 HITFET - BTS3080EJ Smart Low-Side Power Switch Power Stage

5.3 Inductive Load

5.3.1 Output Clamping

When switching off inductive loads with low side switches, the Drain-Source voltage VOUT rises above battery potential, because the inductance intends to continue driving the current. To prevent unwanted high voltages the device has a voltage clamping mechanism to keep the voltage at VOUT(CLAMP). During this clamping operation mode the device heats up as it dissipates the energy from the inductance. Therefore the maximum allowed load inductance is limited. See Figure 11 and Figure 12 for more details. Figure 11 Output Clamp Circuitry Figure 12 Switching an Inductive Load GND ( DMOS Source) OUT ( DMOS Drain IGND VBAT ZL IL VOUT t tVOUT VBAT Id t i Ot t C l f t IOUT VOUT(CLAMP) VIN

Datasheet 16 Rev. 1.0 2016-09-12 HITFET - BTS3080EJ Smart Low-Side Power Switch Power Stage

5.3.1.1 Maximum Load Inductance

While demagnetization of inductive loads, energy has to be dissipated in the BTS3080EJ. This energy can be calculated by the following equation: (5.1) Following equation simplifies under assumption of RL = 0 (5.2) For maximum single avalanche energy please also refer to EAS value in “Energies” on Page 8 Figure 13 Maximum load inductance for single pulse L = f(IL), TJ(0) = TJ, start = 150°C, VBAT = 13.5 V

5.4 Reverse Current capability

A reverse battery situation means the OUT pin is pulled below GND potentials to -VBAT via the load ZL. L L CLAMPOUTBAT LL L CLAMPOUTBAT CLAMPOUT R LIVV IR R VVV × +⎟⎟ )( 1lnE −−×= CLAMPOUTBAT BAT L VV VLIE 100 1000 0,75 1,5 3 6 IL [A] L [mH]

Datasheet 17 Rev. 1.0 2016-09-12 HITFET - BTS3080EJ Smart Low-Side Power Switch Power Stage In this situation the load is driven by a current th rough the intrinsic body di ode of the BTS3080EJ. During Reverse Battery all protection functions like current limitation, over temperature shut down and over voltage clamping are not available. The device is dissipating a power loss which is defined by the driven current and the voltage drop on the DMOS reverse body diode “-VOUT”.

5.5 Inverse Current capability

An inverse current situation means the OUT pin is pulled below GND potential by a current flowing from GND to OUT (for example in half-bridge configuration and inductive load using freewheeling via the low side path). In this situation the load is driven by a current through the intrinsic body diode (device off) of the BTS3080EJ. During Inverse operation all protection functions like current limitation, over temperature shut down and over voltage clamping are not available. The device is dissipating a power loss which is defined by the driven current and the voltage drop on the DMOS reverse body diode “-VOUT”. Input current behavior during inverse condition on Output Please note that during inverse current on drain an increased input current can flow ( IIN(-VOUT)). To limit this current it is needed to place a resistor ( RIN) in line with the input, also to prevent the microcontroller I/O pins f r o m l a t c h i n g u p i n t h i s c a s e . T h e v a l u e o f t h i s r e s istor is a compromise of in put voltage level in normal operation and maximum allowed device input current IIN or I/O current (for example of microcontroller). (5.3) with IIN(max) = 2 mA (see also “Absolute Maximum Ratings” on Page 8) allow for the device; VOHµC(max) maximum high level voltage of the control signal (microcontroller I/O) and assuming -VOUT = 1.1 V (worst case) in inverse condition on the output If inverse current occurs while the STATUS is active (LOW), the STATUS will be reset (HIGH) after the inverse current disappears.

5.6 Characteristics

Please see “Power Stage” on Page 14 for electrical characteristic table. (max) (max) (min) IN OHuC IN I VR =

Datasheet 18 Rev. 1.0 2016-09-12 HITFET - BTS3080EJ Smart Low-Side Power Switch Protection Functions

6 Protection Functions

The device provides embedded protection functions. Integrated protection functions are designed to prevent IC destruction under fault conditions described in the datasheet. Fault conditions are considered as “outside” normal operation. Protection functions are not designed for continuous repetitive operation.

6.1 Over Voltage Clamping on OUTput

The BTS3080EJ is equipped with a voltage clamp circuitry that keeps the drain-source (output to GND) voltage VDS at a certain level VOUT(CLAMP). The over voltage clamping is overruling the other protection functions. Power dissipation has to be limited to not exceed the maximum allowed junction temperature. This function is also used in terms of inductive clamping. Please see also Chapter 5.3.1 for more details.

6.2 Thermal Protection

The device is protected against over temperature due to overload and / or bad cooling conditions. To ensure this a temperature sensor is located in the power MOSFET. The BTS3080EJ has a thermal protection function with automatic restart. After the device has switched off due to over temperature the device will stay off until the junction temperature has dropped down below the thermal hysteresis “Thermal Protection” on Page 18. Figure 14 Thermal protective switch OFF scenario with thermal restart The device also features a digital feedback on the dedi cated status pin. This feedback is latched and can be read out easily by the microcontroller. Please see “Diagnostics” on Page 21 for details on this feedback.

6.3 Short Circuit Protection / Current limitation

The condition short circuit is an over load condition to the device. If th e load current reaches the limitation value of IL(LIM) the device limits the current and therefore wi ll start heating up. When the thermal shutdown temperature is reached, the device turns off. The time from the beginning of curr ent limitation until the over temper ature switch off depends strongly on the cooling conditions. IN t Thermal shutdown t Tj TJ(SD) ΔTJ(SD)_HYS Thermal _ fault_ restart.emf VOUT VBAT t Thermal restart

Datasheet 19 Rev. 1.0 2016-09-12 HITFET - BTS3080EJ Smart Low-Side Power Switch Protection Functions If input is still high the device will turn on again after the measured temperature has dropped below the thermal hysteresis. Figure 15 shows this simplified behavior. Figure 15 Short circuit protection via current limitation and over temperature switch off with auto- restart

6.4 Characteristics

Please see “Protection Functions” on Page 18 for electrical characteristic table. IN tTj TJ(SD) Short_circuit_restart.emf Turn off due to over temperature ID IL(lim ) Restart into short circuit after cooling down Restart into normal load condition Vbat/Zsc ΔTJ(SD)_HYS t t Occurrence of Over current or high ohmic Short circuit

Datasheet 20 Rev. 1.0 2016-09-12 HITFET - BTS3080EJ Smart Low-Side Power Switch Input Stage

7 Input Stage

7.1 Input Circuit

Figure 16 shows the input circuit of the BT S3080EJ. In case of open or fl oating input pin the device will automatically switch off and remain off. An ESD Zener structure protects the input circuit against ESD pulses. Figure 16 Simplified Input circuitry

7.2 Characteristics

Please see “Input Stage” on Page 25 for electrical characteristic table. IN GND ESD protection circuit Input circuit.emf

Datasheet 21 Rev. 1.0 2016-09-12 HITFET - BTS3080EJ Smart Low-Side Power Switch Diagnostics

8 Diagnostics

The BTS3080EJ provides a latching digital status signal via an open drain style feedback on the STATUS pin. In case of a detected over temperature condition, th e device pulls the STATUS pin down to GND (pin) by an internal pull-down intend to signal a low level to the micro controller. This pull-down signal stays active also during thermal restart until the input pin is pulled-down below the input threshold. In normal operation the status needs to be externally pulled up to a 3 V/5 V supply to signal a high level. Figure 17 shows this simplified behavior. Figure 17 Short circuit protection via current limitation and over temperature switch off with auto- restart and signaling via STATUS pin IN t Thermal shutdown t TJ TJ(S D) VSTATU S 3V/ 5V (VDD) t Auto restart Status Latch reset by IN=low Thermal shutdown Error Status Latch ΔTJ( SD ) _ H YS

Datasheet 22 Rev. 1.0 2016-09-12 HITFET - BTS3080EJ Smart Low-Side Power Switch

Electrical Characteristics

9 Electrical Characteristics

9.1 Power Stage

Please see Chapter “Power Stage” on Page 14 for parameter description and further details. Table 5 Electrical Characteristics: Power Stage Tj = -40°C to +150°C, V BAT =6 V to 18 V, all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) Parameter Symbol Values Unit Note or Test Condition Number Min. Typ. Max. Power Stage On-State resistance at hot temperature (150°C) RDS(ON)_150 – 134 160 m Ω TJ = 150°C; VIN = 5 V; IL = IL(NOM) P_9.1.5 On-State resistance at ambient temperature (25°C) RDS(ON)_25 –6 9 – m Ω TJ = 25°C; VIN = 5 V; IL = IL(NOM) P_9.1.11 Nominal load current IL(NOM) –3– A 1) TJ < 150°C; TA = 85°C VIN = 5 V P_9.1.41 OFF state load current, Output leakage current IL(OFF)_85 ––0 . 6 µ A 2) VBAT = 13.5 V; VIN = 0 V; TJ ≤85°C P_9.1.47 OFF state load current, Output leakage current IL(OFF)_150 –0 . 5 2 µ A VBAT = 18 V; VIN = 0 V; TJ = 150°C P_9.1.53 Reverse body diode forward voltage -VOUT –0 . 8 1 . 1 V IL = -IL(NOM); VIN = 0 V P_9.1.67

Datasheet 23 Rev. 1.0 2016-09-12 HITFET - BTS3080EJ Smart Low-Side Power Switch Dynamic characteristics - switching timessingle pulseVBAT = 13.5 V, RL = 4.7Ω; for definition details see Figure 10 “Definition of Power Output Timing for Resistive Load” on Page 14 Turn-on time tON 35 75 115 µs 3) VIN = 0 V to 5 V; VOUT = 10% VBAT P_9.1.68 Turn-off time tOFF 70 135 210 µs 4) VIN = 5 V to 0 V; VOUT = 90% VBAT P_9.1.69 Turn-on delay time tDON 51 5 2 5 µ s VIN = 0 V to 5 V; VOUT = 90% VBAT P_9.1.70 Turn-off delay time tDOFF 40 75 120 µs VIN = 5 V to 0 V; VOUT = 10% VBAT P_9.1.71 Fall time, Falling output voltage (turn- on) tF 30 60 90 µs VIN = 0 V to 5 V; VOUT = 90% VBAT to VOUT = 10% VBAT P_9.1.72 Rise time, Rising output voltage tR 30 60 90 µs VIN = 5 V to 0 V; VOUT = 10% VBAT to VOUT = 90% VBAT P_9.1.73 Turn-on Slew rate -(ΔV/Δt)ON 0.22 0.45 0.65 V/µs 5) VOUT = 90% VBAT to VOUT = 50% VBAT P_9.1.74 Turn-off Slew rate (ΔV/Δt)OFF 0.22 0.45 0.65 V/µs 6) VOUT = 50% VBAT to VOUT = 90% VBAT P_9.1.75 1) Not subject to production test, calculated by RthJA (JEDEC 2s2p, PCB) and RDS(ON) 2) Not subject to production test, specified by design; 3) Not subject to production test, calcul ated with delay time ON and fall time 4) Not subject to production test, calculated with delay time OFF and rise time 5) Not subject to production test, calculated slew rate between 90% and 50% VOUT 6) Not subject to production test, calculated slew rate between 50% and 90% VOUT Table 5 Electrical Characteristics: Power Stage (cont’d) Tj = -40°C to +150°C, V BAT =6 V to 18 V, all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) Parameter Symbol Values Unit Note or Test Condition Number Min. Typ. Max.

Datasheet 24 Rev. 1.0 2016-09-12 HITFET - BTS3080EJ Smart Low-Side Power Switch

9.2 Protection

Please see Chapter “Protection Functions” on Page 18 for parameter description and further details. Note: Integrated protection function s are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are not designed for continuous repetitive operation Table 6 Electrical Characteristics: Protection Tj = -40°C to +150°C, V BAT =6 V to 18 V, all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) Parameter Symbol Values Unit Note or Test Condition Number Min. Typ. Max. Thermal Protection Thermal shut down junction temperature TJ(SD) 150 175 – °C 1) 3V < VIN < 5.5 V 1) Not subject to production test, specified by design. P_9.2.1 Thermal hysteresis ΔTJ_HYS –1 5 – K 1) P_9.2.3 Minimum status latch reset time tRESET 50 – – µs 1) 2) VIN < 0.8 V; 2) Minimum time needed to reset the STATUS latch feedback signal P_9.2.8 Overvoltage Protection Drain clamp voltage VOUT(CLAMP) 40 45 – V VIN = 0 V; IL = 6 mA P_9.2.13 Current limitation (see also Figure 15) Current limitation IL(LIM) 10 15 20 A VIN = 5 V P_9.2.19

Datasheet 25 Rev. 1.0 2016-09-12 HITFET - BTS3080EJ Smart Low-Side Power Switch

9.3 Input Stage

Please see Chapter “Input Stage” on Page 20 for description and further details.

9.4 Diagnostics (STATUS Pin)

Please see Chapter “Diagnostics” on Page 21 for description and further details. Table 7 Electrical Characteristics: Input Tj = -40°C to +150°C, VBAT =6 V to 18 V, all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) Parameter Symbol Values Unit Note or Test Condition Number Min. Typ. Max. Input Input Current, normal ON state IIN(ON) – 82 120 µA VIN = 5.0 V; P_9.3.1 Input Current, protection mode IIN(PROT) – 165 220 µA VIN = 5.0 V; P_9.3.7 Input current, inverse condition on OUT to GND IIN(-VOUT) – 15 – mA 1) 2) VOUT < -0.3 V; -0.3 V ≤ VIN <5.5 V 1) Not subject to production test, specified by design 2) Input current must not exceed the ma ximum ratings in Chapter 4, P_4.1.10 P_9.3.9 Input pull down current IIN-GND 10 – – µA 3) VIN = VIN(TH) 3) Not subject to production test, specified by design P_9.3.10 Input Voltage on-threshold VIN(TH) 0.8 2.3 3 V IL =0.6 mA; Power DMOS active P_9.3.11 Table 8 Electrical Characteristics: Diagnostics Tj = -40°C to +150°C, VBAT =6 V to 18 V, all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) Parameter Symbol Values Unit Note or Test Condition Number Min. Typ. Max. Status pin voltage drop VSTATUS(ON) ––0 . 6 5 V ISTATUS = 1 mA; latched fault; 3V ≤ VIN < 5.5 V P_9.4.1 Status pin leakage current (85°C) ISTATUS(OFF)_85 –1 . 5 6µ A 1) VSTATUS ≤ 5.5 V; TJ ≤ 85°C; 3V ≤ VIN < 5.5 V 1) Not subject to production test, specified by design. P_9.4.2 Status pin leakage current (150°C) ISTATUS(OFF)_150 –61 2 µ A VSTATUS ≤ 5.0 V; TJ = 150°C; 3V ≤ VIN < 5.5 V P_9.4.3

Datasheet 26 Rev. 1.0 2016-09-12 HITFET - BTS3080EJ Smart Low-Side Power Switch Characterization Results

10 Characterization Results

Typical performance characteristics.

10.1 Power Stage

Figure 18 typical RDS(ON) vs. VIN @ TJ = -40 … 150°C, IL = IL(NOM) 0,02 0,04 0,06 0,08 0,1 0,12 0,14 0,16 0,18 3 3,5 4 4,5 5 5,5 RDS(ON) [Ω] VIN [V] 150°C 85°C 25°C -40°C

Datasheet 36 Rev. 1.0 2016-09-12 HITFET - BTS3080EJ Smart Low-Side Power Switch Characterization Results Figure 37 Typical -( ΔV/Δt)ON, (ΔV/Δt)OFF vs TJ @ VIN = 5 V 0.1 0.2 0.3 0.4 0.5 0.6 -40 25 85 150 5 - Average of Slew rate on 5 - Average of Slew rate off TJ [°C] -(ΔV/Δt)ON, (ΔV/Δt)OFF [us]

Datasheet 37 Rev. 1.0 2016-09-12 HITFET - BTS3080EJ Smart Low-Side Power Switch Characterization Results

10.2 Protection

Figure 38 Typical VOUT(CLAMP) vs. TJ @ IL = 6 mA Figure 39 Typical IL(LIM) vs. VBAT @ TJ = -40 … 150°C, VIN = 3 V and 5 V -40 25 85 150 TJ [°C] VOUT(CLAMP) [V] 6 1 11 62 12 63 1 IL(LIM) [A] VBAT [V] 5V - -40°C 5V - 25°C 5V - 85°C 5V - 150°C 3V - -40°V 3V - 25°C 3V - 85°C 3V - 150°C

Datasheet 38 Rev. 1.0 2016-09-12 HITFET - BTS3080EJ Smart Low-Side Power Switch Characterization Results

10.3 Input Stage

Figure 40 Typical VIN(TH) vs. TJ @ IL = 0.6 mA Figure 41 Typical IIN(ON) vs. VIN @ TJ = -40 … 150°C, IL = IL(NOM) 0.5 1.5 2.5 -40 25 85 150 Vth_rising Vth_falling TJ [°C] VIN(TH) [V] 0.0E+00 2.0E-05 4.0E-05 6.0E-05 8.0E-05 1.0E-04 1.2E-04 1.4E-04 1.6E-04 3 3.5 4 4.5 5 5.5 IIN(ON) [A] 150°C 85°C 25°C -40°C VIN [V]

Datasheet 39 Rev. 1.0 2016-09-12 HITFET - BTS3080EJ Smart Low-Side Power Switch Characterization Results Figure 42 Typical IIN(PROT) vs. VIN @ TJ = -40 … 150°C, IL = IL(NOM) 0.0E+00 2.0E-05 4.0E-05 6.0E-05 8.0E-05 1.0E-04 1.2E-04 1.4E-04 1.6E-04 1.8E-04 2.0E-04 3 3.5 4 4.5 5 5.5 150°C 85°C 25°C -40°C VIN [V] IIN(PROT) [A]

Datasheet 40 Rev. 1.0 2016-09-12 HITFET - BTS3080EJ Smart Low-Side Power Switch Characterization Results

10.4 Diagnosis

Figure 43 Typical VSTATUS(ON) vs. VIN @ TJ = -40 … 150°C Figure 44 Typical ISTATUS(OFF) vs. TJ @ VSTATUS = 3 … 5.5 V, VIN = 0 V 0.1 0.2 0.3 0.4 0.5 0.6 3 3.5 4 4.5 5 5.5 VSTATUS(ON) [V] VIN [V] 150°C 85°C 25°C -40°C 0.0E+00 1.0E-06 2.0E-06 3.0E-06 4.0E-06 5.0E-06 6.0E-06 -40 25 85 150 5.5V TJ [°C] ISTATUS(OFF) [A]

Datasheet 41 Rev. 1.0 2016-09-12 HITFET - BTS3080EJ Smart Low-Side Power Switch Characterization Results Figure 45 Typical tRESET vs TJ @ VIN = 0 … 0.8 V -40 25 85 150 0.4V 0.8V TJ [°C] tRESET [us]

Datasheet 42 Rev. 1.0 2016-09-12 HITFET - BTS3080EJ Smart Low-Side Power Switch

Application Information

Note: The following information is given as a hint for the implementation of the device only and shall not be regarded as a description or warranty of a certain functionality, condition or quality of the device.

11.1 Application Diagram

An application example with the BTS3080EJ is shown below. Figure 46 Application example circuitry Recommended values for VIN= 5 V and VDD= 5 V: RSTATUS=4.7 kΩ RSTATUS(PROT)=3.3 kΩ RIN=3.3 kΩ Note: This is a very simplified example of an applicatio n circuit. The function must be verified in the real application. VBA T RIN Voltage Regulator IN OUT Load RST ATU S OUT GND IN ST ATUS I/O PW M Mi cro controller GND VDD I RST ATU S(PR OT )

Datasheet 43 Rev. 1.0 2016-09-12 HITFET - BTS3080EJ Smart Low-Side Power Switch Package Outlines Figure 47 PG-TDSO8-31 Green Product (RoHS compliant) To meet the world-wide customer requirements for en vironmentally friendly products and to be compliant with government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pb-free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020). For further information on alternative packages, please visit our website: http://www.infineon.com/packages. Dimensions in mm

Datasheet 44 Rev. 1.0 2016-09-12 HITFET - BTS3080EJ Smart Low-Side Power Switch

Revision History

Rev. 1.0 2016-09-12 Datasheet released

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