BTS307

BTS307 SIEMENS | Alldatasheet

Document overview

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• PDF pages: 13

Technical content

Features

• Overload protection
• Current limitation
• Short circuit protection
• Thermal shutdown
• Overvoltage protection
• Fast demagnetization of inductive loads
• Reverse battery protection1)
• Open drain diagnostic output
• Open load detection in OFF-state
• CMOS compatible input
• Loss of ground and loss of Vbb protection
• Electrostatic discharge (ESD ) protection Application
• µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads
• Most suitable for inductive loads
• Replaces electromechanical relays, fuses and discrete circuits General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Fully protected by embedded protection functions. + Vbb IN ST Signal GND ESD PROFET OUT GND Logic Voltage sensor Voltage source Open load detection Short circuit detection Charge pump Level shifter Temperature sensorRectifier Limit for unclamped ind. loads Gate protection Current limit Load GND Load V Logic Overvoltage protection 1) With external current limit (e.g. resistor RGND =150 Ω ) in GND connection, resistor in series with ST connection, reverse load current limited by connected load. Product Summary Overvoltage protectionVbb(AZ ) 65 V Operating voltage Vbb(on) 5.8 ... 58 V On-state resistance R ON 250 m Ω Load current (ISO) IL(ISO) 1.7 A TO-220AB/5 Standard Straight leads SMD

1 GND - Logic ground

2 IN I Input, activates the power switch in case of logical high signal

3V bb + Positive power supply voltage, the tab is shorted to this pin

4 ST S Diagnostic feedback

5 OUT

(Load, L) O Output to the load Maximum Ratings at Tj = 25 °C unless otherwise specified Parameter Symbol Values Unit Supply voltage (overvoltage protection see page 3)Vbb 65 V Supply voltage for full short circuit protection2) Tj Start=-40 ...+150°C Vbb 40 V Load current (Short circuit current, see page 4)IL self-limited A Operating temperature range Storage temperature range Tj Tstg -40 ...+150 -55 ...+150 Power dissipation (DC), TC ≤ 25 °C Ptot 50 W Electrostatic discharge capability (ESD ) IN, ST: (Human Body Model) all other pins: VESD 1.0 tbd (>1.0) kV Input voltage (DC) VIN -0.5 ... +36 V Current through input pin (DC) Current through status pin (DC) see internal circuit diagrams page 6 IIN IST ±2.0 ±5.0 mA Thermal Characteristics Parameter and Conditions S ymbol Values Unit min typ max Thermal resistance chip - case: junction - ambient (free air): R thJC R thJA 2.5 K/W 2) Status fault signal in case of short to GND. Internal thermal shutdown after several milliseconds. External shutdown in response to the status fault signal in less than about 1 ms necessary, if the device is used with higher V bb.

Electrical Characteristics

Parameter and Conditions Symbol Values Unit at Tj = 25 °C, Vbb = 12 V unless otherwise specified min typ max Load Switching Capabilities and Characteristics On-state resistance (pin 3 to 5) IL = 2 A, Vbb = 24 V Tj=25 °C: Tj=150 °C: R ON -- 220 390 250 500 m Ω Nominal load current, ISO Norm (pin 3 to 5) VON = 0.5 V, TC = 85 °C IL(ISO) 1.4 1.7 -- A Output current (pin 5) while GND disconnected or GND pulled up, Vbb=32 V, VIN= 0, see diagram page 7 IL(GNDhigh) -- -- 1.1 mA Turn-on time to 90% VOUT : Turn-off time to 10% VOUT : R L = 12 Ω , Vbb = 20V, Tj =-40...+150°C ton toff µs Slew rate on, 10 to 30% VOUT , R L = 12 Ω , Vbb = 20V, Tj =-40...+150°C dV /dton -- -- 6 V/ µs Slew rate off, 10 to 30% VOUT , R L = 12 Ω , Vbb = 20V, Tj =-40...+150°C -dV/dtoff -- -- 7 V/ µs Operating Parameters Operating voltage 3) Tj =-40...+150°C:Vbb(on) 5.8 -- 58 V Undervoltage restart Tj =-40...+150°C:Vbb(u rst) -- -- 4.9 V Undervoltage restart of charge pump see diagram page 11 Tj =-40...+150°C: Vbb(ucp) -- 5.6 7.5 V Undervoltage hysteresis ΔVbb(under) = Vbb(u rst) - Vbb(under) ΔVbb(under) -- 0.4 -- V Overvoltage protection4) Tj =-40...+150°C: Ibb=40 mA Vbb(AZ) 65 70 -- V Standby current (pin 3), VIN=0 Tj=-40...+150°C: Ibb(off) -- 10 50 µA Operating current (Pin 1)5), VIN=5 V IGND -- 2.2 -- mA 3) At supply voltage increase up to Vbb= 5.6 V typ without charge pump, VOUT ≈Vbb - 2 V 4) See also VON(CL) in table of protection functions and circuit diagram page 7. 5) Add IST , if IST > 0, add IIN, if VIN>5.5 V

Parameter and Conditions Symbol Values Unit at Tj = 25 °C, Vbb = 12 V unless otherwise specified min typ max Semiconductor Group 4 Protection Functions Initial peak short circuit current limit (pin 3 to 5)IL(SCp) Tj =-40°C: Tj =25°C: Tj =+150°C: 4.0 A Output clamp (inductive load switch off) at VOUT = Vbb - VON(CL) IL= 1 A, Tj =-40..+150°C:VON(CL) 59 -- 75 V Thermal overload trip temperature Tjt 150 -- -- °C Thermal hysteresis ΔTjt -- 10 -- K Reverse battery (pin 3 to 1) 6) -Vbb -- -- 32 V Diagnostic Characteristics Open load detection current (included in standby current Ibb(off)) IL(off) -- 6 -- µA Open load detection voltage Tj=-40..150°C:VOUT(OL) 2.4 3 4 V Short circuit detection voltage (pin 3 to 5) VON(SC) -- 2.5 -- V 6) Requires 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature protection is not active during reverse current operation! Input and Status currents have to be limited (see max. ratings page 2 and circuit page 7).

Parameter and Conditions Symbol Values Unit at Tj = 25 °C, Vbb = 12 V unless otherwise specified min typ max Semiconductor Group 5 Input and Status Feedback7) Input resistance see circuit page 6 R I -- 20 -- k Ω Input turn-on threshold voltage VIN(T+) 1 -- 2.5 V Input turn-off threshold voltage VIN(T-) 0.8 -- -- V Input threshold hysteresis Δ VIN(T) -- 0.5 -- V Off state input current (pin 2), VIN = 0.4 V IIN(off) 1- - 3 0 µA On state input current (pin 2), VIN = 3.5? V IIN(on) 10 25 70 µA Delay time for status with open load after Input neg. slope (see diagram page 11) td(ST OL3) -- 200 -- µs Status output (open drain) Zener limit voltageTj =-40...+150°C, IST = +1.6 mA: ST low voltageTj =-40...+150°C, IST = +1.6 mA: VST(high) VST(low) 5.4 6.1 0.4 V 7) If a ground resistor RGND is used, add the voltage drop across this resistor.

L H L H L H Open load L H H H H Short circuit to GND L H L L L L Short circuit to V bb L H H H H H Overtem- perature L H L L L L Under- voltage L H L L L L Overvoltage no overvoltage shutdown, see normal operation L = "Low" Level X = don't care Z = high impedance, potential depends on external circuit H = "High" Level Status signal after the time delay shown in the diagrams (see fig 5. page 11) 8) Power Transistor off, high impedance, internal pull up current source for open load detection. Terms PROFET V IN ST OUT GND bb VSTV IN IST IIN Vbb Ibb IL VOUTIGND VON R GND Input circuit (ESD protection) IN GND IR ESD-ZD III ESD zener diodes are not to be used as voltage clamp at DC conditions. Operation in this mode may result in a drift of the zener voltage (increase of up to 1 V). Status output ST GND ESD- ZD +5V R ST(ON) ESD-Zener diode: 6.1 V typ., max 5 mA; R ST(ON) < 0 Ω at 1.6 mA, ESD zener diodes are not to be used as voltage clamp at DC conditions. Operation in this mode may result in a drift of the zener voltage (increase of up to 1 V). Short circuit detection Fault Signal at ST-Pin: VON > 2.5 V typ, no switch off by the PROFET itself, external switch off recommended! Short circuit detection Logic unit + Vbb OUT V ON

Inductive and overvoltage output clamp + Vbb OUT GND PROFET V Z VON VON clamped to -- V typ. Overvolt. and reverse batt. protection + Vbb IN ST STR INR GND GNDR Signal GND Logic PROFET V Z2 IR V Z1 VZ1 = 6.2 V typ., VZ2 = 70 V typ., R GND = 150 Ω , R ST = 15 kΩ , R I= 20 kΩ typ. Open-load detection OFF-state diagnostic condition: VOUT > 3 V typ.; IN low Open load detection Logic unit V OUT Signal GND IL(OL) OFF GND disconnect PROFET V IN ST OUT GND bb Vbb 1 VIN VST VGND +5V 12k For Vbb=24V and VIN=0V: VST >2.8V @ IST ≥ 0 if pulled up as shown. Any kind of load. In case of Input=high is VOUT ≈ VIN - VIN(T+) . GND disconnect with GND pull up PROFET V IN ST OUT GND bb Vbb VGND V IN VST Any kind of load. If VGND > VIN - VIN(T+) device stays off Due to VGND >0, no VST = low signal available. Vbb disconnect with energized inductive load PROFET V IN ST OUT GND bb Vbb high Normal load current can be handled by the PROFET itself.

Vbb disconnect with charged external inductive load PROFET V IN ST OUT GND bb Vbb high S D If other external inductive loads L are connected to the PROFET, additional elements like D are necessary. Inductive Load switch-off energy dissipation PROFET V IN ST OUT GND bb E E E E AS bb L R ELoad L R L{Z L Energy stored in load inductance: EL = 1/2·L·I2 L While demagnetizing load inductance, the energy dissipated in PROFET is EAS = Ebb + EL - ER = ∫ VON(CL)·iL(t) dt, with an approximate solution for RL > 0 Ω : EAS = IL· L 2·R L

• (Vbb + |VOUT(CL) |)· ln (1+ IL·R L |VOUT(CL) | )

all versions: High-side switch, Input protection, ESD protectionand reverse battery protection with 150 Ω in GND connection, protection against loss of ground Type BTS 410D2 410E2 410G2 410H2 307 308 Logic version DEGH Overtemperature protection with hysteresis Tj >150 °C, latch function9)10) Tj >150 °C, with auto-restart on cooling X XX X X X Short circuit to GND protection switches off when VON >3.5 V typ. and Vbb> 8 V typ9) (when first turned on after approx. 150 µs) XX switches off when VON >8.5 V typ.9) (when first turned on after approx. 150 µs) Achieved through overtemperature protection XX X X Open load detection in OFF-state with sensing current 6 µA typ. in ON-state with sensing voltage drop across power transistor XXX X X X Undervoltage shutdown with auto restartXXXX X X Overvoltage shutdown with auto restartXXXX - X Status feedback for overtemperature short circuit to GND short to V bb open load undervoltage overvoltage X X 11) X X X X X 11) X X 11) X X X X X X X X X X X X X X Status output type CMOS Open drain X XXX X X Output negative voltage transient limit (fast inductive load switch off) to Vbb - VON(CL) XXXX X X Load current limit high level (can handle loads with high inrush currents) low level (better protection of application) XX XX X X Protection against loss of GND XXXX X X 9) Latch except when Vbb -VOUT < VON(SC) after shutdown. In most cases VOUT = 0 V after shutdown (VOUT ≠ 0 V only if forced externally). So the device remains latched unless Vbb < VON(SC) (see page 4). No latch between turn on and td(SC). 10) With latch function. Reseted by a) Input low, b) Undervoltage, c) Overvoltage 11) Low resistance short Vbb to output may be detected in ON-state by the no-load-detection

Figure 7a: Overvoltage, no shutdown: IN V OUT t V bb ST ON(CL)V OUT(OL)V

Standard TO-220AB/5 Ordering code BTS 307 tbd TO-220AB/5, Option E3043 Ordering code BTS 307 E3043 C67078-S5204-A3 SMD TO-220AB/5, Opt. E3062 Ordering code BTS 307 E3062A T&R: C67078-S5204-A4 Components used in life-support devices or systems must be expressly authorised for such purpose! Critical components12) of the Semiconductor Group of Siemens AG, may only be used in life supporting devices or systems13) with the express written approval of the Semiconductor Group of Siemens AG. 12) A critical component is a component used in a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 13) Life support devices or systems are intended (a) to be implanted in the human body or (b) support and/or maintain and sustain and/or protect human life. If they fail, it is reasonably to assume that the health of the user or other persons may be endangered.