BTS244Z INFINEON | Alldatasheet
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Technical content
Speed TEMPFET /G01 N-Channel /G01 Enhancement mode /G01 Logic Level Input /G01 Analog driving possible /G01 Fast switching up to 1 MHz /G01 Potential-free temperature sensor with thyristor characteristics /G01 Overtemperature protection /G01 Avalanche rated VPT05166 Type VDS RDS(on) Package Ordering Code BTS 244 Z 55 V 13 m/G01 P-TO220-5-3 Q67060-S6000-A2 P-TO220-5-62 Q67060-S6003-A2 TO-220-5-43 Q67060-S6008 Temperature Sensor G Pin 1 A Pin 2 D Pin 3 and TAB K Pin 4 S Pin 5 Pin Symbol Function
1 G Gate
2 A Anode Temperature Sensor
3 D Drain
4 K Cathode Temperature Sensor
5 S Source
Parameter Symbol Value Unit Drain source voltage VDS 55 V Drain-gate voltage, RGS = 20 k/G01 VDGR 55 Gate source voltage VGS /G02 20 Nominal load current (ISO 10483) VGS = 4.5 V, VDS /G03/G04 0.5 V, TC = 85 °C VGS = 10 V, VDS /G03/G04 0.5 V, TC = 85 °C ID(ISO) A Continuous drain current 1) TC = 100 °C, VGS = 4.5V ID 35 Pulsed drain current ID puls 188 Avalanche energy, single pulse ID = 19 A, RGS = 25 /G01 EAS 1.65 J Power dissipation TC = 25 °C Ptot 170 W Operating temperature 2) Tj -40 ...+175 °C Peak temperature ( single event ) Tjpeak 200 Storage temperature Tstg -55 ... +150 DIN humidity category, DIN 40 040 E IEC climatic category; DIN IEC 68-1 40/150/56 1current limited by bond wire 2Note: Thermal trip temperature of temperature sensor is below 175°C
Parameter Symbol Values Unit min. typ. max. Characteristics junction - case: RthJC - - 0.88 K/W Thermal resistance @ min. footprint Rth(JA) - - 62 Thermal resistance @ 6 cm2 cooling area 1) Rth(JA) - 33 40
Electrical Characteristics
Parameter Symbol Values Unit at Tj = 25°C, unless otherwise specified min. typ. max. Static Characteristics Drain-source breakdown voltage VGS = 0 V, ID = 0.25 mA V(BR)DSS 55 - - V Gate threshold voltage, VGS = VDS ID = 130 µA ID = 250 µA VGS(th) 1.2 1.6 1.65 Zero gate voltage drain current VDS = 50 V, VGS = 0 V, Tj = -40 °C VDS = 50 V, VGS = 0 V, Tj = 25 °C VDS = 50 V, VGS = 0 V, Tj = 150 °C IDSS 0.1 0.1 100 µA Gate-source leakage current VGS = 20 V, VDS = 0 V, Tj = 25 °C VGS = 20 V, VDS = 0 V, Tj = 150 °C IGSS 100 100 nA Drain-Source on-state resistance V GS = 4.5 V, ID = 19 A VGS = 10 V, ID = 19 A RDS(on) 11.5 m/G01 1 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for drain connection. PCB mounted vertical without blown air.
Parameter Symbol Values Unit at Tj = 25°C, unless otherwise specified min. typ. max. Dynamic Characteristics Forward transconductance VDS>2*ID*RDS(on)max , ID = 35 A gfs 25 - - S Input capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Ciss - 2130 2660 pF Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Coss - 600 750 Reverse transfer capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Crss - 320 400 Turn-on delay time VDD = 30 V, VGS = 4.5 V, ID = 47 A, RG = 2.2 /G01 td(on) - 15 25 ns Rise time VDD = 30 V, VGS = 4.5 V, ID = 47 A, RG = 2.2 /G01 tr - 70 105 Turn-off delay time VDD = 30 V, VGS = 4.5 V, ID = 47 A, RG = 2.2 /G01 td(off) - 40 60 Fall time VDD = 30 V, VGS = 4.5 V, ID = 47 A, RG = 2.2 /G01 tf - 25 40 Gate Charge Characteristics Gate charge at threshold V DD = 40 V, ID = 0.1 A, VGS = 0 to 1 V Qg(th) - 2.5 3.8 nC Gate charge at 5.0 V VDD = 40 V, ID = 47 A, VGS = 0 to 5 V Qg(5) - 50 75 Gate charge total VDD = 40 V, ID = 47 A, VGS = 0 to 10 V Qg(total) - 85 130 Gate plateau voltage VDD = 40 V, ID = 47 A V(plateau) - 4.5 - V
Parameter Symbol Values Unit at Tj = 25°C, unless otherwise specified min. typ. max. Reverse Diode Inverse diode continuous forward current TC = 25 °C IS 35 - - A Inverse diode direct current,pulsed TC = 25 °C IFM 188 - - Inverse diode forward voltage V GS = 0 V, IF = 94 A VSD - 1.25 1.8 V Reverse recovery time VR = 30 V, IF=IS, diF/dt = 100 A/µs trr - 110 165 ns Reverse recovery charge VR = 30 V, IF=IS, diF/dt = 100 A/µs Qrr - 0.23 0.35 µC Sensor Characteristics For temperature sensing, i.e. temperature protection, please consider application note "Temperature sense concept - Speed TEMPFET”. For short circuit protection please consider application note "Short circuit behaviour of the Speed TEMPFET family”. All application notes are available at http://www.infineon.com/tempfet/ Forward voltage IAK(on) = 5 mA, Tj = -40...+150 °C IAK(on) = 1.5 mA, Tj = 150 °C VAK(on) 1.3 1.4 0.9 V Sensor override t - - 10 Forward current Tj = -40...+150 °C IAK(on) - - 5 mA Sensor override t - - 600
Parameter Symbol Values Unit at Tj = 25°C, unless otherwise specified min. typ. max. Sensor Characteristics Temperature sensor leakage current Tj = 150 °C IAK(off) - - 4 µA Min. reset pulse duration 1) Tj = -40...+150 °C, IAK(on) = 0.3 mA, VAK(Reset)<0.5V treset 100 - - µs VAK Recovery time1)2) Tj = -40...+150 °C, IAK(on) = 0.3 mA trecovery - - 150 Characteristics Holding current, VAK(off) = 5V Tj = 25 °C Tj = 150 °C IAK(hold) 0.05 0.05 0.5 0.3 mA Thermal trip temperature VTS = 5V TTS(on) 150 160 170 °C Turn-off time (Pin G+A and K+S connected) VTS = 5V, ITS(on) = 2 mA toff 0.5 - 2.5 µs Reset voltage Tj = -40...+150°C VAK(reset) 0.5 - - V Sensor recovery behaviour: V AK [V ] treset trecovery ON Reset OFFSensor Sensor RESET 1See diagram Sensor recovery behaviour 2Time after reset pulse until VAK reaches 4V again
2 Drain current
ID = f(TC); VGS /G01 4.5V 0 20 40 60 80 100 120 140 °C 180 TC A ID
1 Maximum allowable power dissipation
Ptot = f(TC) -40 0 40 80 120 °C 180 TC 100 120 140 180 Ptot 3 Typ. transient thermal impedance ZthJA=f(tp) @ 6 cm2 cooling area Parameter: D=tp/T 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 3 s tp -2 10 -1 10 0 10 1 10 2 10 K/WZthJA Single pulse 0.01 0.02 0.05 0.1 0.2 D=0.5
4 Transient thermal impedance
ZthJC = f (tp) parameter : D = tp/T 10 -8 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 3 s tp -4 10 -3 10 -2 10 -1 10 0 10 1 10 K/WZthJC Single pulse 0.01 0.02 0.05 0.1 0.2 D=0.5
5 Safe operating area
ID=f(VDS); D=0.01; TC=25°C; VGS=4.5V 10 0 10 1 10 2 V VDS 0 10 1 10 2 10 3 10 A ID tp=50µsRdson=Vds/Id DC 100ms 10ms 1ms 100µs 6 Typ. output characteristic ID = f(VDS); Tj=25°C Parameter: VGS 0 1 2 V 4 VDS 100 120 140 A 180 ID 3.5V 4.5V 10V
7 On-state resistance
RON = f(Tj); ID=19A; VGS = 4.5V -50 -25 0 25 50 75 100 125 °C 175 Tj m/G01 RDS(on) typ. max.
8 On-state resistance
RON = f(Tj); ID=19A; VGS = 10V -50 -25 0 25 50 75 100 125 °C 175 Tj m/G01 RDS(on) typ. max.
9 Typ. transfer characteristics ID = f(VGS); VDS = 12V; Tj = 25°C 0 1 2 3 V 5 VGS A 100 ID 10 Typ. input threshold voltage VGS(th) = f(Tj); VDS=VGS Parameter: ID -50 -25 0 25 50 75 100 125 °C 175 Tj 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 V 2.4 VGS(th) 130µA 1.3mA 13mA 130mA 11 Typ. capacitances C = f(VDS); VGS=0 V, f=1 MHz 0 4 8 12 16 20 24 28 32 V 40 VDS -1 10 0 10 1 10 nF C Ciss Coss Crss 12 Typ. forward charcteristics of reverse diode IF = f(VSD) tp = 80µs (spread); Parameter: Tj VSD -1 10 0 10 1 10 2 10 A IF 25°C 150°C
13 Typ. gate charge VGS = f(QGate); ID puls = 47A 0 20 40 60 80 100 nC 140 QGate V BTS 244 Z VGS 0,8 VDS max DS maxV0,2
14 Drain-source break down voltage
V(BR)DSS = f(Tj) -40 0 40 80 120 °C 180 Tj V V(BR)DSS
P-TO220-5-3 Q67060-S6000-A2 Package Ordering Code P-TO220-5-62 Q67060-S6003-A2 3.7 9.5 9.9 15.6 2.8 12.8 0.5 2.4 9.2 1.3 4.4 0.8 1.7 15˚ 9.75 4.5 8.2 GPT05165 4x1.7=6.8 5.6 1) shear and punch direction no burrs this surface 2) min. length by tinning 3) max. 11 mm allowable by tinning 1) 6.8=1.7x4 1.7 0.8 GPT05166 shear and punch direction no burrs this surface1.5 10.5 9.9 0.2 4.4 1.3 2.4 1.5 9.2 3.6 0.5 0.2 M Package Ordering Code TO-220-5-43 Q67060-S6008
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