BTS14A NJSEMI | Alldatasheet
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Technical content
Features
TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960
- N channel
- Enhancement mode
- Temperature sensor with thyristor characteristic
- The drain pin is electrically shorted to the tab Pin G D S Type BTS 140 A \\¥» 50V 42 A ^DS(on) 0.028 Q Package TO-220AB Maximum Ratings Parameter Drain-source voltage Drain-gate voltage, RQS = 20 k£i Gate-source voltage Continuous drain current, rc = 65 °C ISO drain current rc = 85°C,VGS = 10V,Vos = 0.5V Pulsed drain current, Tc = 25 °C Short circuit current, 7] = - 55 ... + 1 50 °C Short circuit dissipation, 7] = - 55 ... + 1 50 °C Power dissipation Operating and storage temperature range DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Thermal resistance Chip-case Chip-ambient Symbol VDS VDSR VGS Awso A) puls /sc PsCmax T\\, Ttfg ^thJC "thJA Values ±20 13.5 168 1200 125 -55... + 150 E 55/150/56 51.0 <75 Unit A W K/W VI .Semi-C (inductors reserves the right in change test conditions, parameter limits and package dimensions without notice Inf'ormution tunrnhcd by NI Semi-Cunducton it believed lo he both accurate ami reliable .11 the lime of going in press. However VI '{cini-CundiKtiiK .^MIMICS iiu responsibility fat iiny errors >>r mnivsiiins JiscuvvretJ in iisiirie N.I Senn-Ci.iiiiliitti.rs < i['\\< nn;ri; h> vci il\\h n >l:itnshcels ire current hetbre plncinii nnlen
Electrical Characteristics
at 7] = 25 °C, unless otherwise specified. Parameter Symbol Values min. typ. max. Unit Static Characteristics Drain-source breakdown voltage VGS = 0, 7D = 0.25 mA Gate threshold voltage VQS = VDS, ID = 1 mA Zero gate voltage drain current VGS = 0 V, VDS = 50 V 7] = 25 °C 7] = 125°C Gate-source leakage current VGS = ±20V,VDS = 0 7] = 25 °C 7] = 150°C Drain-source on-state resistance VGS = 10V, /D=32A V(BR)DSS VoS(th) 7oss IQSS ^DS(on) 2.5 3.0 0.1 2.0 0.024 3.5 1.0 100 100 4.0 0.028 V HA nA HA Q Dynamic Characteristics Forward transconductance VDS > 2 x 7D x RDS(on}max, 70 = 32 A Input capacitance VGS = 0, VDS = 25V,/=1MHz Output capacitance VGS = 0, VDS = 25V,/=1MHz Reverse transfer capacitance VQS = 0, VDS = 25V,/=1MHz Turn-on time t^, (ton = ta(on) + tr) Vcc = 25 V, VQS = 10 V, 7D = 3 A, RGS = 50 Q Turn-off time t«, (t* = rd(oH) + /,) Vcc = 25 V, VQS = 10 V, 7D = 3 A, RQS = 50 ft £ts C|8S ^OM ^d(on) fd(otf) 1800 800 280 220 140 2400 1200 450 130 280 180 S PF ns
Electrical Characteristics (cont'd) at 7] = 25 °C, unless otherwise specified. Parameter Symbol min. Values typ. max. Unit Reverse Diode Continuous source current Pulsed source current Diode forward on-voltage If = 84 A, VQS = 0 Reverse recovery time I F = 7S, diVdr = 100 A/jis, VR = 30 V Reverse recovery charge lf = Is, dip/df = 100 A/us, VR = 30 V *SM VSD tn Qn 1.8 0.14 168 2.2 A V ns nc Temperature Sensor Forward voltage Sensor override, fp ^ 100 jxs Forward current i Sensor override, tp < 100 jis Holding current, VTS(ofl) = 5 V, 7] = 25 °C rj = 150°C Switching temperature VTS = 5V Turn-off time VTS = 5 V, /TS(on) = 2 mA VrS(on) A'S(on) ^TS(on) 0.05 0.05 150 0.5 1.4 0.1 0.2 1.50 600 0.5 0.3 2.5 V mA US