BTS141

BTS141 INFINEON | Alldatasheet

Document overview

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• PDF pages: 9

Technical content

Features

• Logic Level Input
• Input Protection (ESD)
• =Thermal shutdown with latch
• Overload protection
• Short circuit protection
• Overvoltage protection
• Current limitation
• Status feedback with external input resistor
• Analog driving possible Product Summary Drain source voltage VDS 60 V On-state resistance RDS(on) 28 mΩ Current limit ID(lim) 25 A Nominal load current ID(ISO) 12 A Clamping energy EAS 4000 mJ Application
• All kinds of resistive, inductive and capacitive loads in switching or linear applications
• µC compatible power switch for 12 V and 24 V DC applications
• Replaces electromechanical relays and discrete circuits General Description N channel vertical power FET in Smart SIPMOS chip on chip tech- nology. Fully protected by embedded protected functions. protection Overvoltage Drain IN ESD HITFET Source Current1 Over- protection temperature Short circuit protection dv/dt limitation limitation V bb Short circuit protection LOAD Overload protection M

19.05.2000Page 2 BTS 141 Maximum Ratings at Tj = 25 °C unless otherwise specified Parameter Symbol Value Unit Drain source voltage VDS 60 V Drain source voltage for short circuit protection VDS(SC) 32 Continuous input current 1) -0.2V ≤ VIN ≤ 10V VIN < -0.2V or VIN > 10V IIN no limit | IIN | ≤ 2 mA Operating temperature Tj - 40 ... +150 °C Storage temperature Tstg - 55 ... +150 Power dissipation TC = 25 °C Ptot 149 W Unclamped single pulse inductive energy I D(ISO) = 12 A EAS 4000 mJ Electrostatic discharge voltage (Human Body Model) according to MIL STD 883D, method 3015.7 and EOS/ESD assn. standard S5.1 - 1993 VESD 3000 V Load dump protection VLoadDump2) = VA + VS VIN=low or high; VA=13.5 V td = 400 ms, RI = 2 Ω, ID=0,5*12A td = 400 ms, RI = 2 Ω, ID= 12A VLD 100 DIN humidity category, DIN 40 040 E IEC climatic category; DIN IEC 68-1 40/150/56 Thermal resistance junction - case: RthJC 0.84 K/W junction - ambient: RthJA 75 SMD version, device on PCB: 3) RthJA 45 1In case of thermal shutdown a minimum sensor holding current of 500 µA has to be guaranteed (see also page 3). 2VLoaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 3 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm 2 (one layer, 70µm thick) copper area for Drain connection. PCB mounted vertical without blown air.

19.05.2000Page 3 BTS 141

Electrical Characteristics

Parameter Symbol Values Unit at Tj=25°C, unless otherwise specified min. typ. max. Characteristics Drain source clamp voltage VDS(AZ) 60 - 73 V Off state drain current VDS = 32 V, Tj = -40...+150 °C, VIN = 0 V IDSS - - 20 µA Input threshold voltage ID = 2,7 mA VIN(th) 1.3 1.7 2.2 V Input current - normal operation, ID<ID(lim): VIN = 10 V IIN(1) - 35 100 µA Input current - current limitation mode, ID=ID(lim): VIN = 10 V IIN(2) - 270 500 Input current - after thermal shutdown, ID=0 A: VIN = 10 V IIN(3) 1000 2500 4000 Input holding current after thermal shutdown1) Tj = 25 °C Tj = 150 °C IIN(H) 500 300 On-state resistance V IN = 5 V, ID = 12 A, Tj = 25 °C VIN = 5 V, ID = 12 A, Tj = 150 °C RDS(on) mΩ On-state resistance VIN = 10 V, ID = 12 A, Tj = 25 °C VIN = 10 V, ID = 12 A, Tj = 150 °C RDS(on) Nominal load current (ISO 10483) V IN = 10 V, VDS = 0.5 V, TC = 85 °C ID(ISO) 12 - - A 1If the input current is limited by external components, low drain currents can flow and heat the device. Auto restart behaviour can occur.

19.05.2000Page 4 BTS 141 Parameter Symbol Values Unit at Tj=25°C, unless otherwise specified min. typ. max. Characteristics Initial peak short circuit current limit VIN = 10 V, VDS = 12 V ID(SCp) - 100 - A Current limit 1) VIN = 10 V, VDS = 12 V, tm = 350 µs, Tj = -40...+150 °C ID(lim) 25 35 50 Dynamic Characteristics Turn-on time VIN to 90% ID: RL = 2,2 Ω, VIN = 0 to 10 V, Vbb = 12 V ton - 40 100 µs Turn-off time VIN to 10% ID: RL = 2,2 Ω, VIN = 10 to 0 V, Vbb = 12 V toff - 70 170 Slew rate on 70 to 50% Vbb: RL = 2,2 Ω, VIN = 0 to 10 V, Vbb = 12 V -dVDS/dton - 1 3 V/µs Slew rate off 50 to 70% Vbb: RL = 2,2 Ω, VIN = 10 to 0 V, Vbb = 12 V dVDS/dtoff - 1 3 Protection Functions Thermal overload trip temperature Tjt 150 165 - °C Unclamped single pulse inductive energy ID = 12 A, Tj = 25 °C, Vbb = 32 V ID = 12 A, Tj = 150 °C, Vbb = 32 V EAS 4000 900 mJ Inverse Diode Inverse diode forward voltage I F = 5*12A, tm = 300 µS, VIN = 0 V VSD - 1.13 - V 1Device switched on into existing short circuit (see diagram Determination of I D(lim)). If the device is in on condition and a short circuit occurs, these values might be exceeded for max. 50 µs.

19.05.2000Page 5 BTS 141 Block Diagramm Terms Inductive and overvoltage output clamp HITFET IN D VIN ID VDS1 IIN S Vbb RL

3 HITFET

D S Short circuit behaviour V IN ID ID(SCp) t 0 tm t 2 ID(Lim) t 1 Input circuit (ESD protection) IN ESD-ZDI Source ESD zener diodes are not designed for DC current > 2 mA @ VIN>10V. t0: Turn on into a short circuit tm: Measurementpoint for ID(lim) t1: Activation of the fast temperature sensor and regulation of the drain current to a level where the junction temperature remains constant. t2: Thermal shutdown caused by the second temperature sensor, achieved by an integrating measurement.

19.05.2000Page 6 BTS 141 On-state resistance RON = f(Tj); ID=12A; VIN=10V -50 -25 0 25 50 75 100 °C 150 Tj Ω RDS(on) typ. max. Maximum allowable power dissipation Ptot = f(Tc) 0 20 40 60 80 100 120 °C 160 150 100 120 W 160 BTS 141 Ptot On-state resistance R ON = f(Tj); ID= 12A; VIN=5V -50 -25 0 25 50 75 100 °C 150 Tj Ω RDS(on) typ. max. Typ. input threshold voltage VIN(th) = f(Tj); ID=2,7mA; VDS=12V -50 -25 0 25 50 75 100 °C 150 Tj 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 V 2.0 VIN(th)

19.05.2000Page 7 BTS 141 Typ. transfer characteristics ID = f(VIN); VDS=12V; Tj=25°C 0 1 2 3 4 5 6 V 8 VIN A ID Typ. output characteristic ID = f(VDS); Tj=25°C Parameter: VIN 0 1 2 3 4 V 6 VDS A ID Vin=3V 10V Transient thermal impedance Z thJC = f (tp) parameter : D = tp/T 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 2 s tP -3 10 -2 10 -1 10 0 10 1 10 K/WZthJC 0.005 0.01 0.02 0.05 0.1 0.2 D=0.5

19.05.2000Page 8 BTS 141 Application examples: Status signal of thermal shutdown by monitoring input current D S IN µC Vbb HITFETVIN RSt VIN thermal shutdown ∆ V µC ∆V = RST *IIN(3)

19.05.2000Page 9 BTS 141 Package Ordering Code P-TO220-3-1 Q67060-S6502-A2 Package Ordering Code P-TO220-3-45 Q67060-S6502-A3 1) shear and punch direction no burrs this surface 0.5 2.4 2.54 1.05 9.2 1.3 4.4 9.9 GPT05164 10.51.5 1.5 3.6 0.2 0.75 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.