BTS132 SIEMENS | Alldatasheet

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Technical content

Features

  • N channel
  • Logic level
  • Enhancement mode
  • Temperature sensor with thyristor characteristic
  • The drain pin is electrically shorted to the tab Pin 1 2 3 GDS Type V DS ID R DS(on) Package Ordering Code BTS 132 60 V 24 A 0.065 Ω TO-220AB C67078-A5003-A4 Maximum Ratings Parameter Symbol Values Unit Drain-source voltage VDS 60 V Drain-gate voltage,RGS = 20 kΩ VDGR 60 Gate-source peak voltage, aperiodic Vgs ± 20 Gate-source voltage VGS ± 10 Continuous drain current,TC = 25°C ID 24 A ISO drain current TC = 85°C, VGS = 10 V,VDS = 0.5 V ID-ISO 6.0 Pulsed drain current,TC = 25°C ID puls 96 Short circuit current,Tj = – 55 ... + 150°C ISC 80 Short circuit dissipation,Tj = – 55 ... + 150°C PSCmax 1200 W Power dissipation Ptot 75 Operating and storage temperature range Tj,Tstg – 55 ... + 150 °C DIN humidity category, DIN 40 040 – E – IEC climatic category, DIN IEC 68-1 – 55/150/56 Thermal resistance Chip-case Chip-ambient Rth JC Rth JA ≤ 1.67 ≤ 75 K/W

Electrical Characteristics

at Tj = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain-source breakdown voltage VGS = 0, ID = 0.25 mA V(BR)DSS 60 – – V Gate threshold voltage VGS =VDS , ID = 1 mA VGS(th) 1.5 2.0 2.5 Zero gate voltage drain current VGS = 0 V,VDS = 60 V Tj = 25°C Tj = 125°C IDSS 100 300 µA Gate-source leakage current VGS = 20 V,VDS = 0 Tj = 25°C Tj = 150°C IGSS 10 100 nA µA Drain-source on-state resistance VGS = 4.5 V, ID =12 A RDS(on) – 0.055 0.065 Ω Dynamic Characteristics Forward transconductance VDS ≥ 2× ID × RDS(on)max,ID = 12 A gfs 12 17 22 S Input capacitance VGS = 0, VDS = 25 V,f = 1 MHz C iss 800 1050 1400 pF Output capacitance VGS = 0, VDS = 25 V,f = 1 MHz C oss – 500 750 Reverse transfer capacitance VGS = 0, VDS = 25 V,f = 1 MHz C rss – 200 300 Turn-on timeton, (ton =td(on) +tr) VCC = 30 V,VGS = 5 V,ID = 3 A,RGS = 50Ω td(on) –2 5 4 0 n s tr – 150 200 Turn-off timetoff, (toff =td(off) +tf) VCC = 30 V,VGS = 5 V,ID = 3 A,RGS = 50Ω td(off) – 180 250 tf – 125 160 BTS 132

Electrical Characteristics (cont’d) at Tj = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. Reverse Diode Continuous source current IS – – 24 A Pulsed source current ISM ––9 6 Diode forward on-voltage IF = 48 A,VGS = 0 VSD – 1.5 2.0 V Reverse recovery time IF = IS, diF/dt = 100 A/µs,VR = 30 V t rr – 150 – ns Reverse recovery charge IF = IS, diF/dt = 100 A/µs,VR = 30 V Q rr – 1.0 – µC Temperature Sensor Forward voltage ITS(on) = 5 mA,Tj = – 55 ... + 150°C Sensor override,tp ≤ 100µs VTS(on) 1.3 1.4 V Forward current Sensor override,tp ≤ 100µs ITS(on) 600 mA Holding current,VTS(off) = 5 V, Tj = 25°C Tj = 150°C IH 0.05 0.05 0.1 0.2 0.5 0.3 Switching temperature VTS = 5 V TTS(on) 150 – – Turn-off time VTS = 5 V,ITS(on) = 2 mA toff 0.5 – 2.5 µs BTS 132

Examples for short-circuit protection atTj = – 55 ... + 150°C, unless otherwise specified. Parameter Symbol Examples Unit 12 – Drain-source voltage VDS 15 30 – V Gate-source voltage VGS 6.2 4.1 – Short-circuit current ISC ≤ 80 ≤ 37 – A Short-circuit dissipation PSC 1200 1100 – W Response time Tj = 25°C, before short circuit tSC(off) 25 25 – ms BTS 132 Short-circuit protectionISC =f (VDS ) Parameter:V GS DiagramtodetermineISC forTj=–55...+150˚C Max. gate voltageVGS(SC) =f (VDS ) Parameter:Tj= – 55 ... + 150°C

Max. power dissipationPtot =f (TC ) Typical output characteristicsID =f (VDS ) Parameter:tp =8 0µs Typ. drain-source on-state resistance RDS(on) =f (ID ) Parameter:V GS Safe operating areaID =f (VDS ) Parameter:D = 0.01,TC =2 5°C BTS 132

Drain-source on-state resistance RDS(on) =f (Tj) Parameter:ID = 12 A,VGS = 4.5 V (spread) Typ. transfer characteristic ID =f (VGS ) Parameter:tp = 80µs,VDS = 25 V Gate threshold voltageVGS(th) =f (Tj) Parameter:V DS =VGS ,ID = 1 mA Typ. transconductancegfs =f (ID ) Parameter:tp = 80µs,VDS = 25 V BTS 132

Continuous drain currentID = f (TC ) Parameter:VGS ≥ 4.5 V Typ. gate-source leakage current IGSS = f (TC ) Parameter:VGS = 10 V,VDS = 0 Forward characteristics of reverse diode IF =f (VSD ) Parameter:T j,tp = 80µs (spread) Typ. capacitancesC =f (VDS ) Parameter:VGS = 0,f= 1 MHz BTS 132

Transient thermal impedanceZthJC =f (tp) Parameter:D =tp/T BTS 132

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