BTS129 SIEMENS | Alldatasheet

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Technical content

Features

  • N channel
  • Enhancement mode
  • Temperature sensor with thyristor characteristic
  • The drain pin is electrically shorted to the tab Pin 1 2 3 GDS Type V DS ID R DS(on) Package Ordering Code BTS 129 60 V 27 A 0.05 Ω TO-220AB C67078-A5013-A2 Maximum Ratings Parameter Symbol Values Unit Drain-source voltage VDS 60 V Drain-gate voltage,RGS = 20 kΩ VDGR 60 Gate-source peak voltage, aperiodic Vgs ± 20 Continuous drain current,TC = 25°C ID 27 A ISO drain current TC = 85°C, VGS = 10 V,VDS = 0.5 V ID-ISO 7.5 Pulsed drain current,TC = 25°C ID puls 108 Short circuit current,Tj = – 55 ... + 150°C ISC 80 Short circuit dissipation,Tj = – 55 ... + 150°C PSCmax 1200 W Power dissipation Ptot 75 Operating and storage temperature range Tj,Tstg – 55 ... + 150 °C DIN humidity category, DIN 40 040 – E – IEC climatic category, DIN IEC 68-1 – 55/150/56 Thermal resistance Chip-case Chip-ambient Rth JC Rth JA ≤ 1.67 ≤ 75 K/W

Electrical Characteristics

at Tj = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain-source breakdown voltage VGS = 0, ID = 0.25 mA V(BR)DSS 60 – – V Gate threshold voltage VGS =VDS , ID = 1 mA VGS(th) 2.5 3.0 3.5 Zero gate voltage drain current VGS = 0 V,VDS = 60 V Tj = 25°C Tj = 150°C IDSS 100 300 µA Gate-source leakage current VGS = 20 V,VDS = 0 Tj = 25°C Tj = 150°C IGSS 100 nA µA Drain-source on-state resistance VGS = 10 V, ID =17 A RDS(on) – 0.04 0.05 Ω Dynamic Characteristics Forward transconductance VDS ≥ 2× ID × RDS(on)max,ID = 17 A gfs 8.0 13.0 18.0 S Input capacitance VGS = 0, VDS = 25 V,f = 1 MHz C iss 700 940 1250 pF Output capacitance VGS = 0, VDS = 25 V,f = 1 MHz C oss – 500 750 Reverse transfer capacitance VGS = 0, VDS = 25 V,f = 1 MHz C rss – 180 270 Turn-on timeton, (ton =td(on) +tr) VCC = 30 V,VGS = 10 V,ID = 3 A,RGS = 50Ω td(on) –2 5 4 0 n s tr –6 0 9 0 Turn-off timetoff, (toff =td(off) +tf) VCC = 30 V,VGS = 10 V,ID = 3 A,RGS = 50Ω td(off) – 100 130 tf –7 5 9 5 BTS 129

Electrical Characteristics (cont’d) at Tj = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. Reverse Diode Continuous source current IS – – 27 A Pulsed source current ISM – – 108 Diode forward on-voltage IF = 54 A,VGS = 0 VSD – 1.5 2.0 V Reverse recovery time IF = IS, diF/dt = 100 A/µs,VR = 30 V t rr – 150 – ns Reverse recovery charge IF = IS, diF/dt = 100 A/µs,VR = 30 V Q rr – 1.0 – µC Temperature Sensor Forward voltage ITS(on) = 10 mA,Tj = – 55 ... + 150°C Sensor override,tp ≤ 100µs VTS(on) 0.7 1.4 1.5 V Forward current Sensor override,tp ≤ 100µs ITS(on) 600 mA Holding current,VTS(off) = 5 V, Tj = 25°C Tj = 150°C IH 0.05 0.05 0.1 0.2 0.5 0.3 Switching temperature VTS = 5 V TTS(on) 150 – – Turn-off time VTS = 5 V,ITS(on) = 2 mA toff 0.5 – 2.5 µs BTS 129

Examples for short-circuit protection atTj = – 55 ... + 150°C, unless otherwise specified. Parameter Symbol Examples Unit 12 – Drain-source voltage VDS 15 30 – V Gate-source voltage VGS 8.1 5.9 – Short-circuit current ISC ≤ 80 ≤ 37 – A Short-circuit dissipation PSC 1200 1100 – W Response time Tj = 25°C, before short circuit tSC(off) 25 25 – ms BTS 129 Short-circuit protectionISC =f (VDS ) Parameter:V GS Diagram to determineISC forTj=–55...+ 150°C Max. gate voltageVGS(SC) =f (VDS ) Parameter:Tj= – 55 ... + 150°C

Typical output characteristicsID =f (VDS ) Parameter:tp =8 0µs Typ. drain-source on-state resistance RDS(on) =f (ID ) Parameter:V GS SIT00562 Ptot ΙD BTS 129 A 12 3 4 5V = 75W VGS = 20V 9V 8V 7.5V 6.5V 5.5V 4.5V DSV 10V Safe operating areaID =f (VDS ) Parameter:D = 0.01,TC =2 5°C Drain-source on-state resistance RDS(on) =f (Tj) Parameter:ID = 17 A,VGS = 10 V (spread) BTS 129

Typ. transfer characteristic ID =f (VGS ) Parameter:tp = 80µs,VDS = 25 V Gate threshold voltageVGS(th) =f (Tj) Parameter:V DS =VGS ,ID = 1 mA Typ. transconductancegfs =f (ID ) Parameter:tp = 80µs,VDS = 25 V Continuous drain currentID = f (TC ) Parameter:VGS ≥ 10 V BTS 129

Typ. gate-source leakage current IGSS = f (TC ) Parameter:VGS = 20 V,VDS = 0 Forward characteristics of reverse diode IF =f (VSD ) Parameter:T j,tp = 80µs Typ. capacitancesC =f (VDS ) Parameter:VGS = 0,f= 1 MHz Transient thermal impedanceZthJC =f (tp) Parameter:D =tp/T BTS 129

3.79.5 9.9 4.6 0.75 1.05 2.542.54 17.5 2.8 12.8 0.5 2.4 13.5 9.2 15.6 1.3 4.4 GPT05155 3) max. 14.5 by dip tinning press burr max. 0.05 2) dip tinning 1) punch direction, burr max. 0.04 2) 1