BTS120 SIEMENS | Alldatasheet

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Technical content

Features

  • N channel
  • Enhancement mode
  • Temperature sensor with thyristor characteristic
  • The drain pin is electrically shortet to the tab Pin 1 2 3 GDS Type V DS ID R DS(on) Package Ordering Code BTS 120 100 V 19 A 0.1 Ω TO-220AB C67078-A5009-A2 Maximum Ratings Parameter Symbol Values Unit Drain-source voltage VDS 100 V Drain-gate voltage,RGS = 20 kΩ VDGR 100 Gate-source voltage VGS ± 20 Continuous drain current,TC = 25°C ID 19 A ISO drain current TC = 85°C, VGS = 10 V,VDS = 0.5 V ID-ISO 3.5 Pulsed drain current,TC = 25°C ID puls 76 Short circuit current,Tj = – 55 ... + 150°C ISC 55 Short circuit dissipation,Tj = – 55 ... + 150°C PSCmax 800 W Power dissipation Ptot 75 Operating and storage temperature range Tj,Tstg – 55 ... + 150 °C DIN humidity category, DIN 40 040 – E – IEC climatic category, DIN IEC 68-1 – 55/150/56 Thermal resistance Chip-case Chip-ambient Rth JC Rth JA ≤ 1.67 ≤ 75 K/W

Electrical Characteristics

at Tj = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain-source breakdown voltage VGS = 0, ID = 0.25 mA V(BR)DSS 100 – – V Gate threshold voltage VGS =VDS , ID = 1 mA VGS(th) 2.5 3.0 3.5 Zero gate voltage drain current VGS = 0 V,VDS = 100 V Tj = 25°C Tj = 125°C IDSS 100 300 µA Gate-source leakage current VGS = 20 V,VDS = 0 Tj = 25°C Tj = 150°C IGSS 100 nA µA Drain-source on-state resistance VGS = 10 V, ID = 12 A RDS(on) – 0.09 0.1 Ω Dynamic Characteristics Forward transconductance VDS ≥ 2× ID × RDS(on)max,ID =12 A gfs 71 3 1 8 S Input capacitance VGS = 0, VDS = 25 V,f = 1 MHz C iss – 1500 2000 pF Output capacitance VGS = 0, VDS = 25 V,f = 1 MHz C oss – 450 700 Reverse transfer capacitance VGS = 0, VDS = 25 V,f = 1 MHz C rss – 150 240 Turn-on timeton, (ton =td(on) +tr) VCC = 30 V,VGS = 10 V,ID = 3 A,RGS = 50Ω td(on) –3 0 4 5 n s tr –5 0 7 5 Turn-off timetoff, (toff =td(off) +tf) VCC = 30 V,VGS = 10 V,ID = 3 A,RGS = 50Ω td(off) – 170 220 tf – 80 110 BTS 120

Electrical Characteristics (cont’d) at Tj = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. Reverse Diode Continuous source current IS – – 19 A Pulsed source current ISM ––7 5 Diode forward on-voltage IF = 38 A,VGS = 0 VSD – 1.4 1.7 V Reverse recovery time IF = IS, diF/dt = 100 A/µs,VR = 30 V t rr – 200 – ns Reverse recovery charge IF = IS, diF/dt = 100 A/µs,VR = 30 V Q rr – 0.25 – µC Temperature Sensor Forward voltage ITS(on) = 10 mA,Tj = – 55 ... + 150°C Sensor override,tp ≤ 100µs VTS(on) 1.4 1.5 V Forward current Sensor override,tp ≤ 100µs ITS(on) 600 mA Holding current,VTS(off) = 5 V, Tj = 25°C Tj = 150°C IH 0.05 0.05 0.1 0.2 0.5 0.3 Switching temperature VTS = 5 V TTS(on) 150 – – Turn-off time VTS = 5 V,ITS(on) = 2 mA toff 0.5 – 2.5 µs BTS 120

Examples for short-circuit protection atTj = – 55 ... + 150°C, unless otherwise specified. Parameter Symbol Examples Unit 12 – Drain-source voltage VDS 15 30 – V Gate-source voltage VGS 7.3 5.7 – Short-circuit current ISC 53.3 26.7 – A Short-circuit dissipation PSC 800 800 – W Response time Tj = 25°C, before short circuit tSC(off) 25 25 – ms BTS 120 Short-circuit protectionISC =f (VDS ) Parameter:V GS DiagramtodetermineISC forTj=–55...+150°C Max. gate voltageVGS(SC) =f (VDS ) Parameter:Tj= – 55 ... + 150°C

Max. power dissipationPtot =f (TC ) Typical output characteristicsID =f (VDS ) Parameter:tp =8 0µs Typ. drain-source on-state resistance RDS(on) =f (ID ) Parameter:V GS Safe operating areaID =f (VDS ) Parameter:D = 0.01,TC =2 5°C BTS 120

Drain-source on-state resistance RDS(on) =f (Tj) Parameter:ID = 9 A,VGS = 10 V Typ. transfer characteristic ID =f (VGS ) Parameter:tp = 80µs,VDS = 25 V Gate threshold voltageVGS(th) =f (Tj) Parameter:V DS =VGS ,ID = 1 mA (spread) Typ. transconductancegfs =f (ID ) Parameter:tp = 80µs,VDS = 25 V BTS 120

Continuous drain currentID = f (TC ) Parameter:VGS ≥ 10 V Typ. gate-source leakage current IGSS = f (TC ) Parameter:VGS = 20 V,VDS = 0 Forward characteristics of reverse diode IF =f (VSD ) Parameter:T j,tp = 80µs (spread) Typ. capacitancesC =f (VDS ) Parameter:VGS = 0,f= 1 MHz BTS 120

Transient thermal impedanceZthJC =f (tp) Parameter:D =tp/T BTS 120

3.79.5 9.9 4.6 0.75 1.05 2.542.54 17.5 2.8 12.8 0.5 2.4 13.5 9.2 15.6 1.3 4.4 GPT05155 3) max. 14.5 by dip tinning press burr max. 0.05 2) dip tinning 1) punch direction, burr max. 0.04 2) 1