BTS120

BTS120 INFINEON | Alldatasheet

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Technical content

Features

G Temperature sensor with thyristor characteristic G The drain pin is electrically shortet to the tab Pin 1 2 3 GDS Type VDS ID RDS(on) Package Ordering Code BTS 120 100 V 19 A 0.1 Ω TO-220AB C67078-A5009-A2 Maximum Ratings Parameter Symbol Values Unit Drain-source voltage VDS 100 V Drain-gate voltage, RGS = 20 kΩ VDGR 100 Gate-source voltage VGS ± 20 Continuous drain current, TC = 25 °C ID 19 A ISO drain current TC = 85 °C, VGS = 10 V, VDS = 0.5 V ID-ISO 3.5 Pulsed drain current, TC = 25 °C ID puls 76 Short circuit current, Tj = – 55 ... + 150 °C ISC 55 Short circuit dissipation, Tj = – 55 ... + 150 °C PSCmax 800 W Power dissipation Ptot 75 Operating and storage temperature range Tj, Tstg – 55 ... + 150 °C DIN humidity category, DIN 40 040 – E – IEC climatic category, DIN IEC 68-1 – 55/150/56 Thermal resistance Chip-case Chip-ambient Rth JC Rth JA ≤ 1.67 ≤ 75 K/W

TEMPFET® BTS 120 2 04.97

Electrical Characteristics

at Tj = 25 °C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain-source breakdown voltage VGS = 0, ID = 0.25 mA V(BR)DSS 100 –– V Gate threshold voltage VGS = VDS, ID = 1 mA VGS(th) 2.5 3.0 3.5 Zero gate voltage drain current VGS = 0 V, VDS = 100 V Tj = 25 °C Tj = 125 °C I DSS 100 300 µA Gate-source leakage current VGS = 20 V, VDS = 0 Tj = 25 °C Tj = 150 °C I GSS 100 nA µA Drain-source on-state resistance VGS = 10 V, ID = 12 A RDS(on) – 0.09 0.1 Ω Dynamic Characteristics Forward transconductance VDS ≥ 2 × ID × RDS(on)max, ID =12 A gfs 71 3 1 8 S Input capacitance VGS = 0, VDS = 25 V, f = 1 MHz Ciss – 1500 2000 pF Output capacitance VGS = 0, VDS = 25 V, f = 1 MHz Coss – 450 700 Reverse transfer capacitance VGS = 0, VDS = 25 V, f = 1 MHz Crss – 150 240 Turn-on time ton, (ton = td(on) + tr) VCC = 30 V, VGS = 10 V, ID = 3 A, RGS = 50 Ω td(on) – 30 45 ns tr – 50 75 Turn-off time toff, (toff = td(off) + tf) VCC = 30 V, VGS = 10 V, ID = 3 A, RGS = 50 Ω td(off) – 170 220 tf – 80 110

TEMPFET® BTS 120 3 04.97 Electrical Characteristics (cont’d) at Tj = 25 °C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. Reverse Diode Continuous source current I S –– 19 A Pulsed source current I SM –– 75 Diode forward on-voltage I F = 38 A, VGS = 0 VSD – 1.4 1.7 V Reverse recovery time I F = I S, diF/dt = 100 A/µs, VR = 30 V t rr – 200 – ns Reverse recovery charge I F = I S, diF/dt = 100 A/µs, VR = 30 V Q rr – 0.25 – µC Temperature Sensor Forward voltage ITS(on) = 10 mA, Tj = – 55 ... + 150 °C Sensor override, tp ≤ 100 µs VTS(on) 1.4 1.5 V Forward current Sensor override, tp ≤ 100 µs ITS(on) 600 mA Holding current, VTS(off) = 5 V, Tj = 25 °C Tj = 150 °C IH 0.05 0.05 0.1 0.2 0.5 0.3 Switching temperature VTS = 5 V TTS(on) 150 –– Turn-off time VTS = 5 V, ITS(on) = 2 mA toff 0.5 – 2.5 µs

TEMPFET® BTS 120 4 04.97 Examples for short-circuit protection at Tj = – 55 ... + 150 °C, unless otherwise specified. Parameter Symbol Examples Unit 12 – Drain-source voltage VDS 15 30 – V Gate-source voltage VGS 7.3 5.7 – Short-circuit current ISC 53.3 26.7 – A Short-circuit dissipation PSC 800 800 – W Response time Tj = 25 °C, before short circuit tSC(off) 25 25 – ms Short-circuit protection ISC = f (VDS) Parameter:V GS Diagramtodetermine ISC forTj =– 55...+150 °C Max. gate voltage VGS(SC) = f (VDS) Parameter: Tj = – 55 ... + 150 °C

TEMPFET® BTS 120 5 04.97 Max. power dissipation Ptot = f (TC) Typical output characteristics ID = f (VDS) Parameter:t p =8 0 µs Typ. drain-source on-state resistance RDS(on) = f (ID) Parameter:V GS Safe operating area ID = f (VDS) Parameter: D = 0.01, TC =2 5 °C

TEMPFET® BTS 120 6 04.97 Drain-source on-state resistance RDS(on) = f (Tj) Parameter: ID = 9 A, VGS = 10 V Typ. transfer characteristic ID = f (VGS) Parameter:t p = 80 µs, VDS = 25 V Gate threshold voltage VGS(th) = f (Tj) Parameter:V DS = VGS, ID = 1 mA (spread) Typ. transconductance gfs = f (ID) Parameter: tp = 80 µs, VDS = 25 V

TEMPFET® BTS 120 7 04.97 Continuous drain current ID = f (TC) Parameter: VGS ≥ 10 V Typ. gate-source leakage current IGSS = f (TC) Parameter: VGS = 20 V, VDS = 0 Forward characteristics of reverse diode IF = f (VSD) Parameter:T j, tp = 80 µs (spread) Typ. capacitances C = f (VDS) Parameter: VGS = 0, f = 1 MHz

TEMPFET® BTS 120 8 04.97 Transient thermal impedance ZthJC = f (tp) Parameter:D = tp/T

TEMPFET® BTS 120 9 04.97 Standard C67078-A5009-A2 3.79.5 9.9 4.6 0.75 1.05 2.542.54 17.5 2.8 12.8 0.5 2.4 13.5 9.2 15.6 1.3 4.4 GPT05155 3) max. 14.5 by dip tinning press burr max. 0.05 2) dip tinning 1) punch direction, burr max. 0.04 2) 1

TEMPFET® BTS 120 10 04.97 Edition 04.97 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München, Germany © Infineon Technologies AG 2000. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.