BTS118D_06 INFINEON | Alldatasheet
Document overview
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Technical content
Features
/g183 Logic Level Input /g183 Input Protection (ESD) /g183 Thermal shutdown with auto restart
- Green product (RoHS compliant) /g183 Overload protection /g183 Short circuit protection /g183 Overvoltage protection /g183 Current limitation /g183 Analog driving possible P / PG-TO252-3-11
Datasheet 2 Rev. 1.3, 2006-12-22 Smart Low Side Power Switch Power HITFET BTS 118D Maximum Ratings at Tj = 25°C, unless otherwise specified Parameter Symbol Value Unit Drain source voltage VDS 42 V Supply voltage for full short circuit protection Vbb(SC) 42 Continuous input voltage1) VIN -0.2 2) ... +10 Continuous input current2) -0.2V /g163VIN /g163 10V VIN < -0.2V or VIN > 10V IIN self limited | IIN | /g163 2 mA Operating temperature Tj -40 ...+150 °C Storage temperature Tstg -55 ... +150 Power dissipation 5) TC = 85 °C 6cm2 cooling area , TA = 85 °C Ptot 1.1 W Unclamped single pulse inductive energy 2) EAS 2 J Load dump protection VLoadDump2)3) = VA + VS VIN = 0 and 10 V, td = 400 ms, RI = 2 /g87, RL = 6 /g87, VA = 13.5 V VLD 58 V VESD 2 kV Thermal resistance junction - case: RthJC 3 K/W SMD: junction - ambient @ min. footprint @ 6 cm2 cooling area 4) RthJA 115 1For input voltages beyond these limits IIN has to be limited. 2not subject to production test, specified by design 3VLoaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 4 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for drain connection. PCB mounted vertical without blown air. 5not subject to production test, calculated by RthJA and Rds(on) Electrostatic discharge voltage2) (Human Body Model) according to Jedec norm EIA/JESD22-A114-B, Section 4
Datasheet 3 Rev. 1.3, 2006-12-22 Smart Low Side Power Switch Power HITFET BTS 118D
Electrical Characteristics
Parameter Symbol Values Unit at Tj = 25°C, unless otherwise specified min. typ. max. Characteristics Drain source clamp voltage VDS(AZ) 42 - 55 V Off-state drain current Tj = -40...+85 °C, VDS = 32 V , VIN = 0 V Tj = 150 °C IDSS 1.5 µA Input threshold voltage ID = 0.6 mA, Tj = 25 °C ID = 0.6 mA, Tj = 150 °C VIN(th) 1.3 0.8 1.7 2.2 V On state input current IIN(on) - 10 30 µA On-state resistance VIN = 5 V, ID = 2.2 A, Tj = 25 °C VIN = 5 V, ID = 2.2 A, Tj = 150 °C RDS(on) 160 120 240 m/g87 On-state resistance VIN = 10 V, ID = 2.2 A, Tj = 25 °C VIN = 10 V, ID = 2.2 A, Tj = 150 °C RDS(on) 130 100 200 Nominal load current 5) Tj < 150°C, VIN = 10 V, TA = 85 °C, SMD 1) ID(Nom) 2.4 3.2 - A Nominal load current 5) VIN = 10 V, VDS = 0.5 V, TC = 85 °C, Tj < 150°C ID(ISO) 3.5 5 - Current limit (active if VDS>2.5 V)2) VIN = 10 V, VDS = 12 V, tm = 200 µs ID(lim) 10 15 20 1@ 6 cm2 cooling area 2Device switched on into existing short circuit (see diagram Determination of ID(lim)). If the device is in on condit and a short circuit occurs, these values might be exceeded for max. 50 µs. 5not subject to production test, calculated by RthJA and Rds(on)
Datasheet 4 Rev. 1.3, 2006-12-22 Smart Low Side Power Switch Power HITFET BTS 118D Parameter Symbol Values Unit at Tj = 25°C, unless otherwise specified min. typ. max. Dynamic Characteristics Turn-on time VIN to 90% ID: RL = 4.7 /g87, VIN = 0 to 10 V, Vbb = 12 V ton - 40 100 µs Turn-off time VIN to 10% ID: RL = 4.7 /g87, VIN = 10 to 0 V, Vbb = 12 V toff - 70 100 Slew rate on 70 to 50% Vbb: RL = 4.7 /g87, VIN = 0 to 10 V, Vbb = 12 V -dVDS/dton - 0.4 1.5 V/µs Slew rate off 50 to 70% Vbb: RL = 4.7 /g87, VIN = 10 to 0 V, Vbb = 12 V dVDS/dtoff - 0.6 1.5 Protection Functions1) Thermal overload trip temperature Tjt 150 175 - °C Thermal hysteresis 2) /g68Tjt - 10 - K Input current protection mode Tj = 150 °C IIN(Prot) - 100 300 µA Unclamped single pulse inductive energy 2) ID = 2.2 A, Tj = 25 °C, Vbb = 12 V EAS 2 - - J Inverse Diode Inverse diode forward voltage IF = 10.9 A, tm = 250 µs, VIN = 0 V, tP = 300 µs VSD - 1.0 1.5 V 1Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation. 2not subject to production test, specified by design
Datasheet 5 Rev. 1.3, 2006-12-22 Smart Low Side Power Switch Power HITFET BTS 118D Block diagram Inductive and overvoltage output clamp Terms HITFET IN D VIN ID VDS1 IIN S Vbb RL HITFET VZ D S Short circuit behaviourInput circuit (ESD protection) Gate Drive Source/ Ground Input VIN IIN IDS Tj
Datasheet 6 Rev. 1.3, 2006-12-22 Smart Low Side Power Switch Power HITFET BTS 118D
1 Maximum allowable power dissipation
Ptot = f(TC) resp. Ptot = f(TA) @ RthJA=55 K/W -50 -25 0 25 50 75 100 °C 150 TA;TC 0.5 1.5 W Ptot SMD @ 6cm2 Rthjc = 3 K/W
2 On-state resistance
RON = f(Tj); ID=2.2A; VIN=10V -50 -25 0 25 50 75 100 125 °C 175 Tj 100 125 150 175 m/g87 225 RDS(on) typ. max.
3 On-state resistance
RON = f(Tj); ID=2.2A; VIN=5V -50 -25 0 25 50 75 100 125 °C 175 Tj 100 125 150 175 200 m/g87 250 RDS(on) typ. max. 4 Typ. input threshold voltage VIN(th) = f(Tj); ID = 0.3 mA; VDS = 12V -50 -25 0 25 50 75 100 °C 150 Tj 0.2 0.4 0.6 0.8 1.2 1.4 1.6 V VGS(th)
Datasheet 7 Rev. 1.3, 2006-12-22 Smart Low Side Power Switch Power HITFET BTS 118D 5 Typ. transfer characteristics ID=f(VIN); VDS=12V; TJstart=25°C 1 2 3 4 5 6 7 8 V 10 VIN A ID 6 Typ. short circuit current ID(lim) = f(Tj); VDS=12V Parameter: VIN -50 -25 0 25 50 75 100 125 °C 175 Tj A ID Vin=10V 7 Typ. output characteristics ID=f(VDS); TJstart=25°C Parameter: VIN 0 1 2 3 4 V 6 VDS A ID Vin=10V
8 Off-state drain current
IDSS = f(Tj) -50 -25 0 25 50 75 100 125 °C 175 Tj µA IDSS typ. max.
Datasheet 8 Rev. 1.3, 2006-12-22 Smart Low Side Power Switch Power HITFET BTS 118D 9 Typ. overload current ID(lim) = f(t), Vbb=12 V, no heatsink Parameter: Tjstart 0 0.5 1 1.5 2 2.5 3 3.5 4 ms 5 t A ID(lim) -40°C +150°C 85°C 25°C 10 Typ. transient thermal impedance ZthJA=f(tp) @ 6 cm2 cooling area Parameter: D=tp/T 10 -810 -710 -610 -510 -410 -310 -210 -110 0 10 1 10 2 10 4s tp -310 -210 -110 010 110 210 K/WZthJA Single pulse 0.01 0.02 0.05 0.1 0.2 D=0.5
11 Determination of ID(lim)
ID(lim) = f(t); tm = 200µs Parameter: TJstart t A ID(lim) -40°C 25°C 85°C 150°C
Datasheet 9 Rev. 1.3, 2006-12-22 Smart Low Side Power Switch Power HITFET BTS 118D Package Outlines
1 Package Outlines
Figure 1 PG-TO252-3-11 (Plastic Dual Small Outline Package) (RoHS-Compliant) Green Product (RoHS compliant) To meet the world-wide customer requirements for environmentally friendly products and to be compliant with government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pb-free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020). Please specify the package needed (e.g. green package) when placing an order 5.4 ±0.1 -0.056.5 +0.15 A ±0.59.98 6.22 -0.2 1 ±0.1 ±0.150.8 0.15 MAX. ±0.1per side 0.75 2.28 4.57 +0.08 GPT09277 -0.040.5 2.3 -0.10 +0.05 B 0.51 MIN. +0.08 -0.040.5 0...0.15 BA0.25 M 0.1 All metal surfaces tin plated, except area of cut. (5) (4.24) -0.01 +0.200.9 B You can find all of our packages, sorts of packing and others in our Infineon Internet Page “Products”: http://www.infineon.com/products. Dimensions in mm
Datasheet 10 Rev. 1.3, 2006-12-22 Smart Low Side Power Switch Power HITFET BTS 118D
Revision History
2 Revision History
Rev. 1.3 2006-12-22 released automotive green and robust version (BTS) Package parameter (humidity and climatic) removed in Maximum ratings Rev. 1.2 2006-12-11 AEC icon added RoHS icon added Green product (RoHS-compliant) added to the feature list Package information updated to green Green explanation added Rev. 1.1 2006-08-08 released non automotive green version (ITS) Rev. 1.0 2004-03-05 released production version
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