BTS117 INFINEON | Alldatasheet

Document overview

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Technical content

Features

  • Logic Level Input
  • Input Protection (ESD)
  • =Thermal shutdown with latch
  • Overload protection
  • Short circuit protection
  • Overvoltage protection
  • Current limitation
  • Status feedback with external input resistor
  • Analog driving possible Product Summary Drain source voltage VDS 60 V On-state resistance RDS(on) 100 mΩ Current limit ID(lim) 7 A Nominal load current ID(ISO) 3.5 A Clamping energy EAS 1000 mJ Application
  • All kinds of resistive, inductive and capacitive loads in switching or linear applications
  • μC compatible power switch for 12 V and 24 V DC applications
  • Replaces electromechanical relays and discrete circuits General Description N channel vertical power FET in Smart SIPMOS® chip on chip tech- nology. Providing embedded protection functions. protection Overvoltage Drain IN ESD HITFET Source Current1 Over- protection temperature Short circuit protection dv/dt limitation limitation V bb Short circuit protection LOAD Overload protection M
  • AEC qualified
  • Green product (RoHS compliant) Datasheet 1 Rev. 1.0, 2009-07-20 Smart Low Side Power Switch HITFET BTS 117TC

Maximum Ratings at Tj = 25 °C unless otherwise specified Parameter Symbol Value Unit Drain source voltage VDS 60 V Drain source voltage for short circuit protection VDS(SC) 32 Continuous input current 1) -0.2V ≤ VIN ≤ 10V VIN < -0.2V or VIN > 10V IIN no limit | IIN | ≤ 2 mA Operating temperature Tj - 40 ... +150 °C Storage temperature Tstg - 55 ... +150 Power dissipation TC = 25 °C Ptot 50 W Unclamped single pulse inductive energy I D(ISO) = 3.5 A EAS 1000 mJ Electrostatic discharge voltage (Human Body Model) according to MIL STD 883D, method 3015.7 and EOS/ESD assn. standard S5.1 - 1993 VESD 3000 V Load dump protection VLoadDump2) = VA + VS VIN=low or high; VA=13.5 V td = 400 ms, RI = 2 Ω, ID=0,5*3.5A td = 400 ms, RI = 2 Ω, ID= 3.5A VLD Thermal resistance junction - case: RthJC 2.5 K/W junction - ambient: RthJA 75 SMD version, device on PCB: 3) RthJA 45 1In case of thermal shutdown a minimum sensor holding current of 500 μA has to be guaranteed (see also page 3). 2VLoaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 3 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm 2 (one layer, 70μm thick) copper area for Drain connection. PCB mounted vertical without blown air. Datasheet 2 Rev. 1.0, 2009-07-20 Smart Low Side Power Switch HITFET BTS 117TC

Electrical Characteristics

Parameter Symbol Values Unit at Tj=25°C, unless otherwise specified min. typ. max. Characteristics Drain source clamp voltage VDS(AZ) 60 - 73 V Off state drain current V DS = 32 V, Tj = -40...+150 °C, VIN = 0 V IDSS - - 5 μA Input threshold voltage I D = 0.7 mA VIN(th) 1.3 1.7 2.2 V Input current - normal operation, ID<ID(lim): VIN = 10 V IIN(1) - 30 60 μA Input current - current limitation mode, ID=ID(lim): VIN = 10 V IIN(2) - 120 300 Input current - after thermal shutdown, ID=0 A: VIN = 10 V IIN(3) 800 2200 4000 Input holding current after thermal shutdown1) Tj = 25 °C Tj = 150 °C IIN(H) 500 300 On-state resistance V IN = 5 V, ID = 3.5 A, Tj = 25 °C VIN = 5 V, ID = 3.5 A, Tj = 150 °C RDS(on) 180 120 240 mΩ On-state resistance V IN = 10 V, ID = 3.5 A, Tj = 25 °C VIN = 10 V, ID = 3.5 A, Tj = 150 °C RDS(on) 160 100 200 Nominal load current (ISO 10483) V IN = 10 V, VDS = 0.5 V, TC = 85 °C ID(ISO) 3.5 - - A 1If the input current is limited by external components, low drain currents can flow and heat the device. Auto restart behaviour can occur. Datasheet 3 Rev. 1.0, 2009-07-20 Smart Low Side Power Switch HITFET BTS 117TC

Parameter Symbol Values Unit at Tj=25°C, unless otherwise specified min. typ. max. Characteristics Initial peak short circuit current limit VIN = 10 V, VDS = 12 V ID(SCp) - 25 - A Current limit 1) VIN = 10 V, VDS = 12 V, tm = 350 μs, Tj = -40...+150 °C ID(lim) 7 10 15 Dynamic Characteristics Turn-on time VIN to 90% ID: RL = 4.7 Ω, VIN = 0 to 10 V, Vbb = 12 V ton - 40 70 μs Turn-off time VIN to 10% ID: RL = 4.7 Ω, VIN = 10 to 0 V, Vbb = 12 V toff - 70 150 Slew rate on 70 to 50% Vbb: RL = 4.7 Ω, VIN = 0 to 10 V, Vbb = 12 V -dVDS/dton - 1 3 V/μs Slew rate off 50 to 70% Vbb: RL = 4.7 Ω, VIN = 10 to 0 V, Vbb = 12 V dVDS/dtoff - 1 3 Protection Functions Thermal overload trip temperature Tjt 150 165 - °C Unclamped single pulse inductive energy ID = 3.5 A, Tj = 25 °C, Vbb = 32 V ID = 3.5 A, Tj = 150 °C, Vbb = 32 V EAS 1000 225 mJ Inverse Diode Inverse diode forward voltage I F = 5*3.5A, tm = 300 μS, VIN = 0 V VSD - 1 - V 1Device switched on into existing short circuit (see diagram Determination of I D(lim)). If the device is in on condition and a short circuit occurs, these values might be exceeded for max. 50 μs. 2Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation. Datasheet 4 Rev. 1.0, 2009-07-20 Smart Low Side Power Switch HITFET BTS 117TC

Terms Inductive and overvoltage output clamp HITFET IN D VIN ID VDS1 IIN S Vbb RL

3 HITFET

D S Short circuit behaviour V IN ID ID(SCp) t 0 tm t 2 ID(Lim) t 1 Input circuit (ESD protection) IN ESD-ZDI Source ESD zener diodes are not designed for DC current > 2 mA @ VIN>10V. t0: Turn on into a short circuit tm: Measurementpoint for ID(lim) t1: Activation of the fast temperature sensor and regulation of the drain current to a level where the junction temperature remains constant. t2: Thermal shutdown caused by the second temperature sensor, achieved by an integrating measurement. Datasheet 5 Rev. 1.0, 2009-07-20 Smart Low Side Power Switch HITFET BTS 117TC

RON = f(Tj); ID=3.5A; VIN=10V -50 -25 0 25 50 75 100 °C 150 Tj 100 125 150 Ω 200 RDS(on) typ. max. Maximum allowable power dissipation P tot = f(Tc) 0 20 40 60 80 100 120 °C 160 150 W BTS 117 Ptot On-state resistance R ON = f(Tj); ID= 3.5A; VIN=5V -50 -25 0 25 50 75 100 °C 150 Tj 100 125 150 175 200 Ω 250 RDS(on) typ. max. Typ. input threshold voltage V IN(th) = f(Tj); ID=0.7mA; VDS=12V -50 -25 0 25 50 75 100 °C 150 Tj 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 V 2.0 VIN(th) Datasheet 6 Rev. 1.0, 2009-07-20 Smart Low Side Power Switch HITFET BTS 117TC

Typ. transfer characteristics ID = f(VIN); VDS=12V; Tj=25°C 0 1 2 3 4 5 6 V 8 VIN A ID Typ. output characteristic I D = f(VDS); Tj=25°C Parameter: VIN 0 1 2 3 4 V 6 VDS A ID Vin=3V 10V Transient thermal impedance Z thJC = f (tp) parameter : D = tp/T 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 2s tP -210 -110 010 110 K/W RthJC 0.005 0.01 0.02 0.05 0.1 0.2 D=0.5 Datasheet 7 Rev. 1.0, 2009-07-20 Smart Low Side Power Switch HITFET BTS 117TC

Application examples: Status signal of thermal shutdown by monitoring input current D S IN μC Vbb HITFETVIN RSt VIN thermal shutdown Δ V μC ΔV = RST *IIN(3) Datasheet 8 Rev. 1.0, 2009-07-20 Smart Low Side Power Switch HITFET BTS 117TC

Datasheet 9 Rev. 1.0, 2009-07-20 Smart Low Side Power Switch HITFET BTS 117TC Package Outlines

1 Package Outlines

MAX. BA0.25 M ±0.2 GPT09085 8.5 1) 7.55 1) (15) ±0.29.25 ±0.31 0...0.15 5.08 2.54 0.75 ±0.1 1.05 ±0.11.27 4.4 B 0.5 ±0.1 ±0.32.7 4.7 ±0.5 ±0.31.3 2.4 0...0.3 A All metal surfaces tin plated, except area of cut. Metal surface min. X = 7.25, Y = 6.9 Typical1) 0.1 B 0.1 0.05 Figure 1 PG-TO263-3-2 (Plastic Dual Small Outline Package) (RoHS-Compliant) To meet the world-wide customer requirements for environmentally friendly products and to be compliant with government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pb- free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020). Please specify the package needed (e.g. green package) when placing an order You can find all of our packages, sorts of packing and others in our Infineon Internet Page “Products”: http://www.infineon.com/products. Dimensions in mm

Datasheet 10 Rev. 1.0, 2009-07-20 Smart Low Side Power Switch HITFET BTS 117TC

Revision History

2 Revision History

Rev. 1.0 2009-07-20 intial released Datasheet

81726 Munich, Germany

© Infineon Technologies AG 2009. All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.