BTS114A SIEMENS | Alldatasheet

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Technical content

Features

  • N channel
  • Enhancement mode
  • Temperature sensor with thyristor characteristic
  • The drain pin is electrically shorted to the tab Pin 1 2 3 GDS Type V DS ID R DS(on) Package Ordering Code BTS 114A 50 V 17 A 0.10 Ω TO-220AB C67078-S5000-A2 Maximum Ratings Parameter Symbol Values Unit Drain-source voltage VDS 50 V Drain-gate voltage,RGS = 20 kΩ VDGR 50 Gate-source voltage VGS ± 20 Continuous drain current,TC = 27°C ID 17 A ISO drain current TC = 85°C, VGS = 10 V,VDS = 0.5 V ID-ISO 3.8 Pulsed drain current,TC = 25°C ID puls 68 Short circuit current,Tj = – 55 ... + 150°C ISC 37 Short circuit dissipation,Tj = – 55 ... + 150° C PSCmax 550 W Power dissipation Ptot 50 Operating and storage temperature range Tj,Tstg – 55 ... + 150 °C DIN humidity category, DIN 40 040 – E – IEC climatic category, DIN IEC 68-1 – 55/150/56 Thermal resistance Chip-case Chip-ambient Rth JC Rth JA ≤ 2.5 ≤ 75 K/W

Electrical Characteristics

at Tj = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain-source breakdown voltage VGS = 0, ID = 0.25 mA V(BR)DSS 50 – – V Gate threshold voltage VGS =VDS , ID = 1.0 mA VGS(th) 2.5 3.0 3.5 Zero gate voltage drain current VGS = 0 V,VDS = 50 V Tj = 25°C Tj = 125°C IDSS 0.1 1.0 100 µA Gate-source leakage current VGS = 20 V,VDS = 0 Tj = 25 °C Tj = 150°C IGSS 100 nA µA Drain-source on-state resistance VGS = 10 V, ID = 9.0 A RDS(on) – 0.08 0.10 Ω Dynamic Characteristics Forward transconductance VDS ≥ 2× ID × RDS(on)max,ID =9 A gfs 5.0 8.0 – S Input capacitance VGS = 0, VDS = 25 V,f = 1 MHz C iss – 450 600 pF Output capacitance VGS = 0, VDS = 25 V,f = 1 MHz C oss – 220 350 Reverse transfer capacitance VGS = 0, VDS = 25 V,f = 1 MHz C rss – 85 150 Turn-on timeton, (ton =td(on) +tr) VCC = 30 V,VGS = 10 V,ID = 3.0 A, RGS = 50Ω td(on) –2 0 3 0 n s t r –4 0 6 0 Turn-off timetoff, (toff =td(off) +tf) VCC = 30 V,VGS = 10 V,ID = 3.0 A, RGS = 50Ω td(off) –5 5 7 0 tf –4 0 6 0 BTS 114A

Electrical Characteristics (cont’d) at Tj = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. Reverse Diode Continuous source current IS – – 17 A Pulsed source current ISM ––6 8 Diode forward on-voltage IF = 30 A,VGS = 0 VSD – 1.5 1.8 V Reverse recovery time IF = IS, diF/dt = 100 A/µs,VR = 30 V t rr –6 0 – ns Reverse recovery charge IF = IS, diF/dt = 100 A/µs,VR = 30 V Q rr – 0.10 – µC Temperature Sensor Forward voltage ITS(on) = 10 mA,Tj = – 55 ... + 150°C Sensor override,tp ≤ 100µs VTS(on) 1.4 1.5 V Forward current Sensor override,tp ≤ 100µs ITS(on) 600 mA Holding current,VTS(off) = 5.0 V,Tj = 25°C Tj = 150°C IH 0.05 0.05 0.1 0.2 0.5 0.3 Switching temperature VTS = 5.0 V TTS(on) ––– Turn-off time VTS = 5.0 V,ITS(on) = 2 mA toff 0.5 – 2.5 µs BTS 114A

Examples for short-circuit protection atTj = – 55 ... + 150°C, unless otherwise specified Parameter Symbol Examples Unit 12 – Drain-source voltage VDS 15 30 – V Gate-source voltage VGS 7.2 5.2 – Short-circuit current ISC 37 17 – A Short-circuit dissipation PSC 550 510 – W Response time Tj = 25°C, before short circuit tSC(off) 25 25 – ms BTS 114A Short-circuit protectionISC =f (VDS ) Parameter:V GS Diagram to determineISC forTj=–55...+ 150 °C Max. gate voltageVGS(SC) =f (VDS ) Parameter:Tj= – 55 ... + 150°C

Max. power dissipationPtot =f (TC ) Typical output characteristicsID =f (VDS ) Parameter:tp =8 0µs Typ. drain-source on-state resistance RDS(on) =f (ID ) Parameter:V GS Safe operating areaID =f (VDS ) Parameter:D = 0.01,TC =2 5°C BTS 114A

Drain-source on-state resistance RDS(on) =f (Tj) Parameter:ID = 9 A,VGS = 10 V Typ. transfer characteristic ID =f (VGS ) Parameter:tp = 80µs,VDS = – 25 V Gate threshold voltageVGS(th) =f (Tj) Parameter:V DS =VGS ,ID = – 1 mA (spread) Typ. transconductancegfs =f (ID ) Parameter:tp = 80µs,VDS = – 25 V BTS 114A

Continuous drain currentID = f (TC ) Parameter:VGS ≥ – 10 V Typ. gate-source leakage current IGSS = f (TC ) Parameter:VGS = 20 V,VDS = 0 Forward characteristics of reverse diode IF =f (VSD ) Parameter:T j,tp = 80µs (spread) Typ. capacitancesC =f (VDS ) Parameter:VGS = 0,f= 1 MHz BTS 114A

Transient thermal impedanceZthJC =f (tp) Parameter:D =tp/T BTS 114A

SMD Version E3044 C67078-S5000-A8 Tape & reel E3045 A C67078-S5000-A11 3.79.5 9.9 4.6 0.75 1.05 2.542.54 17.5 2.8 12.8 0.5 2.4 13.5 9.2 15.6 1.3 4.4 GPT05155 3) max. 14.5 by dip tinning press burr max. 0.05 2) dip tinning 1) punch direction, burr max. 0.04 2) 1