BTS100 SIEMENS | Alldatasheet

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Technical content

Features

  • P channel
  • Enhancement mode
  • Temperature sensor with thyristor characteristic
  • The drain pin is electrically shorted to the tab Pin 1 2 3 GDS Type V DS ID R DS(on) Package Ordering Code BTS 100 – 50 V – 8 A 0.3 Ω TO-220AB C67078-A5007-A2 Maximum Ratings Parameter Symbol Values Unit Drain-source voltage VDS – 50 V Drain-gate voltage,RGS = 20 kΩ VDGR – 50 Gate-source voltage VGS ± 20 Continuous drain current,TC = 30°C ID – 8.0 A ISO drain current TC = 85 ˚C,VGS = 10 V,VDS = 0.5 V ID-ISO – 1.5 Pulsed drain current,TC = 25°C ID puls – 32 Short circuit current,Tj = – 55 ... + 150°C ISC – 25 Short circuit dissipation,Tj = – 55 ... + 150°C PSCmax 500 W Power dissipation Ptot 40 Operating and storage temperature range Tj,Tstg – 55 ... + 150 °C DIN humidity category, DIN 40 040 – E – IEC climatic category, DIN IEC 68-1 – 55/150/56 Thermal resistance Chip-case Chip-ambient Rth JC Rth JA ≤ 3.1 ≤ 75 K/W 04.96

Electrical Characteristics

at Tj = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain-source breakdown voltage VGS = 0, ID = – 0.25 mA V(BR)DSS – 50 – – V Gate threshold voltage VGS =VDS , ID = – 1 mA VGS(th) – 2.5 – 3.0 – 3.5 Zero gate voltage drain current VGS = 0 V,VDS = – 50 V Tj = 25°C Tj = 150°C IDSS – 1 – 100 – 10 – 300 µA Gate-source leakage current VGS = – 20 V,VDS = 0 Tj = 25°C Tj = 150°C IGSS – 10 – 2 – 100 – 4 nA µA Drain-source on-state resistance VGS = – 10 V, ID = – 5 A RDS(on) – 0.25 0.3 Ω Dynamic Characteristics Forward transconductance VDS ≥ 2× ID × RDS(on)max,ID = – 5 A gfs 1.5 2.3 4.0 S Input capacitance VGS = 0, VDS = – 25 V,f = 1 MHz C iss – 900 1200 pF Output capacitance VGS = 0, VDS = – 25 V,f = 1 MHz C oss – 350 550 Reverse transfer capacitance VGS = 0, VDS = – 25 V,f = 1 MHz C rss – 130 230 Turn-on timeton, (ton =td(on) +tr) VCC = – 30 V,VGS = – 10 V,ID = – 2.9 A, RGS = 50Ω td(on) –2 0 3 0 n s tr –6 0 9 5 Turn-off timetoff, (toff =td(off) +tf) VCC = – 30 V,VGS = – 10 V,ID = – 2.9 A, RGS = 50Ω td(off) –7 0 9 0 tf –5 5 7 5 BTS 100

Electrical Characteristics (cont’d) at Tj = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. Reverse Diode Continuous source current IS – – – 8.0 A Pulsed source current ISM – – – 32 Diode forward on-voltage IF = – 16 A,VGS = 0 VSD – – 1.0 – 1.7 V Reverse recovery time IF = IS, diF/dt = – 100 A/µs,VR = – 30 V t rr –9 0 – ns Reverse recovery charge IF = IS, diF/dt = – 100 A/µs,VR = – 30 V Q rr – 0.23 – µC Temperature Sensor Forward voltage ITS(on) = – 10 mA,Tj = – 55 ... + 150°C Sensor override,tp ≤ 100µs VTS(on) – 1.4 – 1.5 – 10 V Forward current Sensor override,tp ≤ 100µs ITS(on) – 10 – 600 mA Holding current,VTS(off) = – 5 V,Tj = 25°C Tj = 150°C IH – 0.05 – 0.05 – 0.1 – 0.2 – 0.5 – 0.3 Switching temperature VTS = – 5 V TTS(on) 150 – – Turn-off time VTS = – 5 V,ITS(on) = – 2 mA toff 0.5 – 2.5 µs BTS 100

Examples for short-circuit protection atTj = – 55 ... + 150°C, unless otherwise specified. Parameter Symbol Example Unit 12 – Drain-source voltage VDS – 15 – 30 – V Gate-source voltage VGS – 10 – 8.2 – Short-circuit current ISC ≤ – 25 ≤ – 16 – A Short-circuit dissipation PSC 375 480 – W Response time Tj = 25°C, before short circuit tSC(off) 55 55 – ms BTS 100 Short-circuit protectionISC =f (VDS ) Parameter:V GS Diagram to determineISC forTj=–55...+ 150 ˚C Max. gate voltageVGS(SC) =f (VDS ) Parameter:Tj= – 55 ... + 150°C

Max. power dissipationPtot =f (TC ) Typical output characteristicsID =f (VDS ) Parameter:tp =8 0µs Typ. drain-source on-state resistance RDS(on) =f (ID ) Parameter:V GS Safe operating areaID =f (VDS ) Parameter:D = 0.01,TC =2 5°C BTS 100

Drain-source on-state resistance RDS(on) =f (Tj) Parameter:ID = – 5 A,VGS = – 10 V Typ. transfer characteristic ID =f (VGS ) Parameter:tp = 80µs,VDS = – 25 V Gate threshold voltageVGS(th) =f (Tj) Parameter:V DS =VGS ,ID = – 1 mA Typ. transconductancegfs =f (ID ) Parameter:tp = 80µs,VDS = – 25 V BTS 100

Continuous drain currentID = f (TC ) Parameter:VGS ≥ – 10 V Typ. gate-source leakage current IGSS = f (TC ) Parameter:VGS = – 20 V,VDS = 0 Forward characteristics of reverse diode IF =f (VSD ) Parameter:T j,tp = 80µs Typ. capacitancesC =f (VDS ) Parameter:VGS = 0,f= 1 MHz BTS 100

Transient thermal impedanceZthJC =f (tp) Parameter:D =tp/T BTS 100

SMD Version E3045 C67078-A5007-A7 SMD T&R E3045A C67078-A5007-A12 3.79.5 9.9 4.6 0.75 1.05 2.542.54 17.5 2.8 12.8 0.5 2.4 13.5 9.2 15.6 1.3 4.4 GPT05155 3) max. 14.5 by dip tinning press burr max. 0.05 2) dip tinning 1) punch direction, burr max. 0.04 2) 1