BTPA56N3 CYSTEKEC | Alldatasheet

Document overview

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Technical content

Features

  • Low VCE(sat), VCE(sat)=-0.07 V (typ), at IC / IB = -100mA / -10mA
  • Excellent current gain characteristics
  • Pb-free lead plating and halogen-free package Symbol Outline SOT-23 BTPA56N3 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-Base V oltage VCBO -80 Collector-Emitter V oltage VCEO -80 Emitter-Base V oltage VEBO -5 V Collector Current (DC) IC -500 mA Collector Current (Pulse) ICP -1 (Note 1) A Base Current IB -200 mA Power Dissipation 0.225 Power Dissipation PD 0.35 (Note 2) W Operating Junction and Storage Temperature Range Tj ; Tstg -65~+150 °C

CYStech Electronics Corp. Spec. No. : C217N3 Issued Date : 2013.06.26 Revised Date : Page No. : 2/8 BTPA56N3 CYStek Product Specification Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-ambient, max Rth,j-a 556 °C/W Thermal Resistance, Junction-to-ambient, max (Note 2) Rth,j-a 357 °C/W Note : 1. Single Pulse , Pw=300μs, duty cycle≤2%. Characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Test Conditions BVCBO -80 - - V IC=-100μA, IE=0 BVCEO -80 - - V IC=-1mA, IB=0 BVEBO -5 - - V IE=-100μA, IC=0 ICBO - - -100 nA VCB=-80V , IE=0 ICES - - -100 nA VCB=-60V , IE=0 IEBO - - -100 nA VEB=-5V , IC=0 *VCE(sat) - -70 -250 mV IC=-100mA, IB=-10mA *VBE(sat) - -0.8 -1.2 V IC=-100mA, IB=-10mA *VBE(on) - -0.73 -1.2 V VCE=-1V , IC=-100mA *hFE 1 100 - - - VCE=-1V , IC=-10mA *hFE 2 100 - - - VCE=-1V , IC=-100mA fT 50 200 - MHz VCE=-1V , IC=-100mA, f=100MHz Cob - 7 - pF VCB=-10V , f =1MHz *Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2%

Ordering Information

(Pb-free lead plating and halogen-free package) 3000 pcs / Tape & Reel

CYStech Electronics Corp. Spec. No. : C217N3 Issued Date : 2013.06.26 Revised Date : Page No. : 3/8 BTPA56N3 CYStek Product Specification Typical Characteristics Emitter Grounded Output Characteristics 0.05 0.1 0.15 0.2 0.25 0123456 -VCE, Collector-to-Emitter Voltage(V) -IC, Collector Current(A) 200uA 300uA 400uA 500uA 1mA -IB=100uA Emitter Grounded Output Characteristics 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0123456 -VCE, Collector-to-Emitter Voltage(V) -IC, Collector Current(A) 1mA 1.5mA 2.5mA 5mA -IB=500uA Emitter Grounded Output Characteristics 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0123456 -VCE, Collector-to-Emitter Voltage(V) -IC, Collector Current(A) 4mA 6mA 8mA 20mA -IB=2mA Emitter Grounded Output Characteristics 0.2 0.4 0.6 0.8 1.2 1.4 0123456 -VCE, Collector-to-Emitter Voltage(V) -IC, Collector Current(A) 10mA 25mA 50mA -IB=5mA Current Gain vs Collector Current 100 1000 0.1 1 10 100 1000 -IC, Collector Current(mA) Current Gain---HFE Ta=125°C Ta= 75°C Ta= 25°C Ta=0°C Ta=-40°C VCE=-1V Current Gain vs Collector Current 100 1000 0.1 1 10 100 1000 -IC, Collector Current(mA) Current Gain---HFE Ta=125°C Ta=75°C Ta=25°C Ta=0°C Ta=-40°C VCE=-2V

CYStech Electronics Corp. Spec. No. : C217N3 Issued Date : 2013.06.26 Revised Date : Page No. : 4/8 BTPA56N3 CYStek Product Specification Typical Characteristics(Cont.) Current Gain vs Collector Current 100 1000 0.1 1 10 100 1000 -IC, Collector Current(mA) Current Gain---HFE Ta=125°C Ta=75°C Ta=25°C Ta=0°C Ta=-40°C VCE=-5V Saturation Voltage vs Collector Current 100 1000 0.1 1 10 100 1000 -IC, Collector Current(mA) Saturation Voltage---(mV) Ta=125°C Ta=75°C Ta=25°C Ta=0°C Ta=-40°C VCESAT@IC=10IB Saturation Voltage vs Collector Current 100 1000 0.1 1 10 100 1000 -IC, Collector Current(mA) Saturation Voltage---(mV) Ta=125°C Ta=75°C Ta=25°C Ta=0°C Ta=-40°C VCESAT@IC=20IB Saturation Voltage vs Collector Current 100 1000 0.1 1 10 100 1000 -IC, Collector Current(mA) Saturation Voltage---(mV) Ta=125°C Ta=75°C Ta=25°C Ta=0°C Ta=-40°C VCESAT@IC=50IB Saturation Voltage vs Collector Current 100 1000 10000 0.1 1 10 100 1000 -IC, Collector CurrentmA) Saturation Voltage---(mV) VBESAT@IC=10IB Ta=-40°C Ta=0°C Ta=25°C Ta=75°C Ta=125°C On Voltage vs Collector Current 100 1000 10000 0.1 1 10 100 1000 -IC, Collector Current(mA) On Voltage---(mV) VBEON@VCE=-1V Ta=-40°C Ta=0°C Ta=25°C Ta=75°C Ta=125°C

CYStech Electronics Corp. Spec. No. : C217N3 Issued Date : 2013.06.26 Revised Date : Page No. : 5/8 BTPA56N3 CYStek Product Specification Typical Characteristics(Cont.) Capacitance vs Reverse-biased Voltage 100 0.1 1 10 100 -VR, Reverse-biased Voltage(V) Capacitance---(pF) Cib Cob Cutoff Frequency vs Collector Current 100 1000 1 10 100 1000 -IC, Collector Current(mA) Cutoff Frequency---fT(MHz) VCE=-1V Power Derating Curve 100 150 200 250 0 50 100 150 200 Ambient Temperature---TA(℃) Power Dissipation---PD(mW)

CYStech Electronics Corp. Spec. No. : C217N3 Issued Date : 2013.06.26 Revised Date : Page No. : 6/8 BTPA56N3 CYStek Product Specification Reel Dimension Carrier Tape Dimension

CYStech Electronics Corp. Spec. No. : C217N3 Issued Date : 2013.06.26 Revised Date : Page No. : 7/8 BTPA56N3 CYStek Product Specification Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3°C/second max. 3°C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds Time maintained above: −Temperature (TL) − Time (tL) 183°C 60-150 seconds 217°C 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C 260 +0/-5 °C Time within 5°C of actual peak temperature(tp) 10-30 seconds 20-40 seconds Ramp down rate 6°C/second max. 6°C/second max. Time 25 °C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface.

CYStech Electronics Corp. Spec. No. : C217N3 Issued Date : 2013.06.26 Revised Date : Page No. : 8/8 BTPA56N3 CYStek Product Specification SOT-23 Dimension Style : Pin 1.Base 2.Emitter 3.Collector 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 Marking: Product Code Date Code: Year+Month Year: 3→2003, 4→2004 *: Typical Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:

  • Lead: Pure tin plated.
  • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice:
  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
  • CYStek reserves the right to make changes to its products without notice.
  • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.