BTNA29N3 CYSTEKEC | Alldatasheet

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Technical content

CYStech Electronics Corp. Spec. No. : C848N3-A Issued Date : 2004.03.26 Revised Date : 2018.02.07 Page No. : 1/9 BTD2150N3 CYStek Product Specification General Purpose NPN Epitaxial Planar Transistor BTNA29N3

Description

  • The BTNA29N3 is a darlington amplifier transistor
  • Pb-free lead plating and halogen-free package Symbol Outline

Ordering Information

(Pb-free lead plating and halogen-free package) 3000 pcs / tape & reel SOT-23 BTNA29N3 B：Base C：Collector E：Emitter E C B B C E Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel,7” reel Product rank, zero for no rank products Product name

CYStech Electronics Corp. Spec. No. : C848N3-A Issued Date : 2004.03.26 Revised Date : 2018.02.07 Page No. : 2/9 BTD2150N3 CYStek Product Specification Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-Base V oltage V CBO 100 V Collector-Emitter V oltage V CES 100 V Emitter-Base V oltage V EBO 12 V Collector Current I C 0.5 A Peak Collector Current I CP 2 A Power Dissipation P D 500 (Note) mW Operating Junction Temperature Range Tj -55~+150 °C Storage Temperature Range Tstg -55~+150 °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device function al operation is not implied, damage may occur and reliability may be affected. Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case, max R θJC 190 Thermal Resistance, Junction-to-ambient, max (Note) R θJA 250 °C/W Note : Device is mounted on an FR-4 PCB, single sided, 1oz. copper, tin plated, mounting pad for collector 15mm ×15 mm. Characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Test Conditions BVCBO 100 145 - V I C=100μA BVCES 100 135 - V I C=100μA, VBE=0V BVEBO 12 18 - V I E=10μA ICBO - - 100 nA V CB=80V ICES - - 500 nA V CE=80V IEBO - - 100 nA V EB=10V *VCE(sat) - 0.71 1.0 V I C=10mA, IB=0.01mA *VCE(sat) - 0.84 1.1 V I C=100mA, IB=0.1mA *VCE(sat) - - 1.2 V I C=500mA, IB=5mA *VBE(sat) - 1.4 1.8 V I C=100mA, IB=0.1mA *VBE(on) - 1.35 2.0 V V CE=5V , IC=100mA *hFE 1 10K - - V CE=5V , IC=10mA *hFE 2 15K - - V CE=5V , IC=100mA *hFE 3 1K - - V CE=5V , IC=500mA fT 125 200 - MHz V CE=5V , IC=10mA, f=100MHz Cob - 5 8 pF V CB=10V , f=100MHz *Pulse Test: Pulse Width ≤300μs, Duty Cycle≤2%

CYStech Electronics Corp. Spec. No. : C848N3-A Issued Date : 2004.03.26 Revised Date : 2018.02.07 Page No. : 3/9 BTD2150N3 CYStek Product Specification Typical Characteristics Emitter Grounded Output Characteristics 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0123456 VCE, Collector-to-Emitter Voltage(V) IC, Collector Current(A) IB=0 IB=1mA IB=100uA Emitter Grounded Output Characteristics 0.2 0.4 0.6 0.8 1.2 0123456 VCE, Collector-to-Emitter Voltage(V) IC, Collector Current(A) IB=0 IB=500uA IB=5mA Emitter Grounded Output Characteristics 0.2 0.4 0.6 0.8 1.2 1.4 1.6 0123456 VCE, Collector-to-Emitter Voltage(V) IC, Collector Current(A) IB=0 IB=2mA IB=4mA IB=10mA IB=20mA Emitter Grounded Output Characteristics 0.2 0.4 0.6 0.8 1.2 1.4 1.6 1.8 0123456 VCE, Collector-to-Emitter Voltage(V) IC, Collector Current(A) IB=0 IB=5mA IB=10mA IB=50mA Current Gain vs Collector Current 100 1 10 100 1000 IC, Collector Current(mA) HFE, Current Gain Ta=25°C VCE=10V VCE=5V VCE=2V Current Gain vs Collector Current 100 1000 1 10 100 1000 IC, Collector Current(mA) HFE, Current Gain VCE=5V 125°C 75°C 25°C 0°C -40°C

CYStech Electronics Corp. Spec. No. : C848N3-A Issued Date : 2004.03.26 Revised Date : 2018.02.07 Page No. : 4/9 BTD2150N3 CYStek Product Specification Typical Characteristics(Cont.) Current Gain vs Collector Current 100 1000 1 10 100 1000 IC, Collector Current(mA) HFE, Current Gain VCE=10V 125°C 75°C 25°C 0°C -40°C Saturation Voltage vs Collector Current 100 1000 10000 1 10 100 1000 IC, Collector Current(mA) VCE(SAT), Saturation Voltage(mV) VCE(SAT) @ IC=500IB -40°C 0°C 25°C 75°C 125°C Saturation Voltage vs Collector Current 100 1000 10000 1 10 100 1000 IC, Collector Current(mA) VCE(SAT), Saturation Voltage(mV) VCE(SAT) @ IC=1000IB -40°C 0°C 25°C 75°C 125°C Saturation Voltage vs Collector Current 100 1000 10000 1 10 100 1000 IC, Collector Current(mA) VBE(SAT), Saturation Voltage(mV) VBE(SAT)@IC=500IB -40°C 0°C 25°C 75°C 125°C Saturation Voltage vs Collector Current 100 1000 10000 1 10 100 1000 IC, Collector Current(mA) VBE(SAT), Saturation Voltage(mV) VBE(SAT)@IC=1000IB -40°C 0°C 25°C 75°C 125°C Saturation Voltage vs Collector Current 100 1000 10000 1 10 100 1000 IC, Collector Current(mA) VBE(ON), On Voltage(mV) VBE(ON)@VCE=5V -40°C 0°C 25°C 75°C 125°C

CYStech Electronics Corp. Spec. No. : C848N3-A Issued Date : 2004.03.26 Revised Date : 2018.02.07 Page No. : 5/9 BTD2150N3 CYStek Product Specification Typical Characteristics(Cont.) Capacitance vs Reverse-Biased Voltage 100 0.1 1 10 100 VR, Reverse-Biased Voltage(V) Capacitance(pF) Cob Cib Power Derating Curve 100 200 300 400 500 600 0 50 100 150 200 Ambient Temperature---TA(℃) Power Dissipation---PD(mW) See Note on page 2 Recommended Soldering Footprint

CYStech Electronics Corp. Spec. No. : C145N3 Issued Date : 2018.03.16 Revised Date : Page No. : 6/8 BTNA29N3 CYStek Product Specification Reel Dimension Carrier Tape Dimension

CYStech Electronics Corp. Spec. No. : C145N3 Issued Date : 2018.03.16 Revised Date : Page No. : 7/8 BTNA29N3 CYStek Product Specification Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3°C/second max. 3 °C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds Time maintained above: −Temperature (TL) − Time (tL) 183°C 60-150 seconds 217°C 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C 260 +0/-5 °C Time within 5°C of actual peak temperature(tp) 10-30 seconds 20-40 seconds Ramp down rate 6°C/second max. 6 °C/second max. Time 25 °C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface.

CYStech Electronics Corp. Spec. No. : C145N3 Issued Date : 2018.03.16 Revised Date : Page No. : 8/8 BTNA29N3 CYStek Product Specification SOT-23 Dimension *:Typical Notes : 1.Controlling dimension : millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material :

  • Lead : Pure tin plated.
  • Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0. Important Notice:
  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
  • CYStek reserves the right to make changes to its products without notice.
  • CYSrek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Marking: Style : Pin 1.Base 2.Emitter 3.Collector 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 Product Code Date Code: Year+Month Year: 6→2016, 7→2017 FF XX