BTNA06N3 CYSTEKEC | Alldatasheet

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CYStech Electronics Corp. Spec. No. : C216N3 Issued Date : 2003.10.07 Revised Date : Page No. : 1/4 BTNA06N3 CYStek Product Specification General Purpose NPN Epitaxial Planar Transistor BTNA06N3

Description

  • The BTNA06N3 is designed for use in general purpose amplification and switching application.
  • High current , IC = 0.5A
  • Low VCE(sat) , VCE(sat) = 0.25V(typ.) at IC/IB = 100mA/10mA
  • Complementary to BTPA56N3. Symbol Outline Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-Base V oltage V CBO 80 V Collector-Emitter V oltage V CEO 80 V Emitter-Base V oltage V EBO 4 V Collector Current I C 500 mA Power Dissipation Pd 225 mW Junction Temperature Tj 150 °C Storage Temperature Tstg -55~+150 °C BTNA06N3 SOT-23 B：Base C：Collector E：Emitter

CYStech Electronics Corp. Spec. No. : C216N3 Issued Date : 2003.10.07 Revised Date : Page No. : 2/4 BTNA06N3 CYStek Product Specification Characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Test Conditions BVCBO 80 - - V I C=100µA BVCEO 80 - - V I C=1mA BVEBO 4 - - V I E=100µA ICBO - - 100 nA V CB=80V ICEO - - 100 nA V CE=60V *VCE(sat) - - 0.25 V I C=100mA, IB=10mA *VBE(on) - - 1.2 V V CE=1V , IC=100mA *hFE1 50 - - - V CE=1V , IC=10mA *hFE2 50 - - - V CE=1V , IC=100mA fT 100 - - MHz V CE=2V , IC=10mA, f=100MHz *Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2%

CYStech Electronics Corp. Spec. No. : C216N3 Issued Date : 2003.10.07 Revised Date : Page No. : 3/4 BTNA06N3 CYStek Product Specification Characteristic Curves Current Gain vs Collector Current 100 1000 1 10 100 1000 Collector Current---IC(mA) Current Gain---HFE VCE = 5V VCE = 1V VCE = 2V Saturation Voltage vs Collector Current 100 1000 1 10 100 1000 Collector Current---IC(mA) Saturation Voltage---(mV) VCE(SAT) @IC=20IB VCE(SAT) @IC=10IB Saturation Voltage vs Collector Current 100 1000 1 10 100 1000 Collector Current---IC(mA) Saturation Voltage---(mV) VBE(SAT) @IC=10IB On Voltage vs Collector Current 100 1000 1 10 100 1000 Collector Current---IC(mA) On Voltage---(mV) VBE(ON) @VCE=1V Power Derating Curve 100 150 200 250 0 50 100 150 200 Ambient Temperature---TA(℃) Power Dissipation---PD(mW)

CYStech Electronics Corp. Spec. No. : C216N3 Issued Date : 2003.10.07 Revised Date : Page No. : 4/4 BTNA06N3 CYStek Product Specification SOT-23 Dimension *: Typical H 0.0005 0.0040 0.013 0.10 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:

  • Lead: 42 Alloy ; solder plating
  • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice:
  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
  • CYStek reserves the right to make changes to its products without notice.
  • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. H JKD A L GV C B S Style: Pin 1.Base 2.Emitter 3.Collector Marking: TE 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3