BTN3501E3 CYSTEKEC | Alldatasheet

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Technical content

Features

  • Low VCE(sat)
  • High BVCEO
  • Excellent current gain characteristics Symbol Outline Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-Base V oltage V CBO 80 V Collector-Emitter V oltage V CEO 80 V Emitter-Base V oltage V EBO 6 V Collector Current (DC) I C 10 Collector Current (Pulse) I CP 20 (Note 1) A Power Dissipation @ TA=25℃ PD 2 Power Dissipation @ TC=25℃ PD 50 W Thermal Resistance, Junction to Ambient R θJA 62.5 °C/W Thermal Resistance, Junction to Case R θJC 2.5 °C/W Junction Temperature Tj 150 °C Storage Temperature Tstg -55~+150 °C Note : 1. Single Pulse , Pw≦380µs,Duty≦2%. BTN3501E3 B：Base C：Collector E：Emitter TO-220AB B C E

CYStech Electronics Corp. Spec. No. : C606E3 Issued Date : 2004.08.18 Revised Date : Page No. : 2/4 BTN3501E3 CYStek Product Specification Characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Test Conditions BVCEO(SUS) 80 - - V I C=30mA, IB=0 ICES - - 10 µA V CE=80V , VBE=0 IEBO - - 50 µA V EB=5V , IC=0 *VCE(sat) - 0.3 0.6 V I C=8A, IB=0.4A *VBE(sat) - 1.0 1.5 V I C=8A, IB=0.8A *hFE 60 - - - V CE=1V , IC=2A *hFE 40 - - - V CE=1V , IC=4A fT - 50 - MHz V CE=6V , IC=500mA, f=20MHz Cob - 130 - pF V CB=10V , f=1MHz *Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2% Characteristic Curves Grounded Emitter Output Characteristics 500 1000 1500 2000 2500 0246 Collector To Emitter Voltage---VCE(V) Collector Current---IC(mA) IB=0mA 4mA 6mA 8mA 2mA 10mA Grounded Emitter Output Characteristics 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 0123456 Collector To Emitter Voltage---VCE(V) Collector Current---IC(mA) IB=0mA 5mA 10mA 15mA 20mA 25mA Grounded Emitter Output Characteristics 100 120 140 0123456 Collector To Emitter Voltage---VCE(V) Collector Current---IC(mA) IB=0uA 100uA 200uA 300uA 400uA 500uA Grounded Emitter Output Characteristics 100 200 300 400 500 600 700 0123456 Collector To Emitter Voltage---VCE(V) Collector Current---IC(mA) IB=0uA 500uA 1mA 1.5mA 2mA 2.5mA

CYStech Electronics Corp. Spec. No. : C606E3 Issued Date : 2004.08.18 Revised Date : Page No. : 3/4 BTN3501E3 CYStek Product Specification Current Gain vs Collector Current 100 1000 1 10 100 1000 10000 Collector Current---I C(mA) Current Gain---H FE VCE = 1V VCE = 2V VCE = 5V Saturation Voltage vs Collector Current 100 1000 10000 1 10 100 1000 10000 Collector Current---I C(mA) Saturation Voltage---(mV) VCE(SAT) IC = 20IB IC = 10IB IC = 50IB Saturation Voltage vs Collector Current 100 1000 10000 1 10 100 1000 10000 Collector Current---I C(mA) Saturation Voltage---(mV) VCE(SAT) @ IC = 10IB Power Derating Curve 0.5 1.5 2.5 0 50 100 150 200 Ambient Temperature---T A(℃) Power Dissipation---PD(W) Power Derating Curve 0 50 100 150 200 Case Temperature---T C(℃) Power Dissipation---PD(W)

CYStech Electronics Corp. Spec. No. : C606E3 Issued Date : 2004.08.18 Revised Date : Page No. : 4/4 BTN3501E3 CYStek Product Specification TO-220AB Dimension *: Typical Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:

  • Lead: 42 Alloy ; solder plating
  • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice:
  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
  • CYStek reserves the right to make changes to its products without notice.
  • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. A B E G I KM OP C N H D 4 Style: Pin 1.Base 2.Collector 3.Emitter 4.Collector 3-Lead TO-220AB Plastic Package CYStek Package Code: E3 Marking: N3501