BTN2222AL3

BTN2222AL3 CYSTEKEC | Alldatasheet

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CYStech Electronics Corp. Spec. No. : C227L3 Issued Date : 2004.03.17 Revised Date : Page No. : 1/4 BTN2222AL3 CYStek Product Specification General Purpose NPN Epitaxial Planar Transistor BTN2222AL3

Description

• Low collector output capacitance.
• High current capability
• Low leakage current
• High cutoff frequency
• Complementary to BTP2907AL3 Symbol Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-Base Voltage V CBO 75 V Collector-Emitter Voltage V CEO 40 V Emitter-Base Voltage V EBO 6 V Collector Current I C 600 mA Power Dissipation @TC=25℃ Pd 5 W Junction Temperature Tj 150 °C Storage Temperature Tstg -55~+150 °C BTN2222AL3 B：Base C：Collector E：Emitter

CYStech Electronics Corp. Spec. No. : C227L3 Issued Date : 2004.03.17 Revised Date : Page No. : 2/4 BTN2222AL3 CYStek Product Specification Characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Test Conditions BVCBO 75 - - V I C=10µA BVCEO 40 - - V I C=10mA BVEBO 6 - - V I E=10µA ICBO - - 10 nA V CB=60V ICEX - - 10 nA V CE=60V,VEB(off)=3V IEBO - - 100 nA V EB=3V *VCE(sat)1 - - 0.3 V I C=150mA, IB=15mA *VCE(sat)2 - - 1.0 V I C=500mA, IB=50mA *VBE(sat)1 - - 1.2 V I C=150mA, IB=15mA *VBE(sat)2 - - 2.0 V I C=500mA, IB=50mA hFE1 35 - - - V CE=10V, IC=0.1mA hFE2 50 - - - V CE=10V, IC=1mA hFE3 75 - - - V CE=10V, IC=10mA *hFE4 100 - 300 - V CE=10V, IC=150mA *hFE5 50 - - - V CE=1V, IC=150mA *hFE6 40 - - - V CE=10V, IC=500mA fT 300 - - MHz V CE=20V, IC=20mA, f=100MHz Cob - - 8 pF V CB=10V, IE=0A, f=1MHz *Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2%

CYStech Electronics Corp. Spec. No. : C227L3 Issued Date : 2004.03.17 Revised Date : Page No. : 3/4 BTN2222AL3 CYStek Product Specification Characteristic Curves Current Gain vs Collector Current 100 1000 0.1 1 10 100 1000 Collector Current---IC(mA) Current Gain---HFE VCE=1V VCE=10V Saturation Voltage vs Collector Current 100 1000 0.1 1 10 100 1000 Collector Current---IC(mA) Saturation Voltage---(mV) VCE(SAT)@IC=10IB Saturation Voltage vs Collector Current 100 1000 1 10 100 1000 Collector Current---IC(mA) Saturation Voltage---(mV) VCE(SAT)@IC=38IB Saturation Voltage vs Collector Current 100 1000 10000 0.1 1 10 100 1000 Collector Current---IC(mA) Saturation Voltage---(mV) VBE(SAT)@IC=10IB Cutoff Frequency vs Collector Current 100 1000 1 10 100 Collector Current---IC(mA) Cutoff Frequency---fT(MHz) VCE=20V Power Derating Curve 0 50 100 150 200 Ambient Temperature---TC(℃) Power Dissipation---PD(W)

CYStech Electronics Corp. Spec. No. : C227L3 Issued Date : 2004.03.17 Revised Date : Page No. : 4/4 BTN2222AL3 CYStek Product Specification SOT-223 Dimension *: Typical D 0.0236 0.0315 0.60 0.80 a1 *13 o - *13 o - E *0.0906 - *2.30 - a2 0 o 10 o 0 o 10 o F 0.2480 0.2638 6.30 6.70 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:

• Lead: 42 Alloy; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. 321 F B A C D E G H a1 I Style: Pin 1.Base 2.Collector 3.Emitter Marking: 3-Lead SOT-223 Plastic Surface Mounted Package CYStek Package Code: L3 2222A