BTN1053A3 CYSTEKEC | Alldatasheet

Document overview

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Technical content

Features

  • Excellent HFE Characteristics up to 1A
  • Low Saturation Voltage, VCE(sat)=0.1V(typ)@IC=1A, IB=50mA
  • 5A peak pulse current
  • Pb-free lead plating and halogen-free package Symbol Outline BTN1053A3 TO-92 Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limit Unit Collector-Base V oltage VCBO 150 V Collector-Emitter V oltage VCEO 80 V Emitter-Base V oltage VEBO 6 V IC(DC) 2 A Collector Current IC(Pulse) 5 (Note) A Power Dissipation Pd 750 mW Operating Junction Temperature Range Tj -55~+150 °C Storage Temperature Range Tstg -55~+150 °C Note : *1. Single Pulse Pw≦350μs,Duty≦2%. E C B B：Base C：Collector E：Emitter

CYStech Electronics Corp. Spec. No. : C818A3 Issued Date : 2013.05.22 Revised Date : 2013.06.25 Page No. : 2/7 BTN1053A3 CYStek Product Specification Characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Test Conditions BVCBO 150 250 - V IC=100μA BVCEO 80 110 - V IC=10mA BVEBO 6 7.4 - V IE=10μA ICBO - - 100 nA VCB=150V IEBO - - 100 nA VEB=6V VCE(sat) 1 * - 25 40 mV IC=200mA, IB=20mA VCE(sat) 2 * - 65 150 mV IC=500mA, IB=20mA VCE(sat) 3 * - 200 400 mV IC=1A, IB=10mA VCE(sat) 4 * - 100 250 mV IC=1A, IB=50mA VCE(sat) 5 * - 190 300 mV IC=2A, IB=100mA VBE(sat) * - 0.83 1.2 V IC=1A, IB=50mA VBE(on) * - 0.92 1.2 V VCE=2V , IC=3A hFE 1 * 300 - - - VCE=2V , IC=10mA hFE 2 * 300 - 820 - VCE=2V , IC=500mA hFE 3 * 120 - - - VCE=2V , IC=1A hFE 4 * 30 - - - VCE=2V , IC=2A fT - 140 - MHz VCE=10V , IC=50mA, f=100MHz Cob - 23 - pF VCB=10V , IE=0A,f=1MHz *Pulse Test: Pulse Width ≤300μs, Duty Cycle≤2%

Ordering Information

BTN1053A3-0-BK-G 1000 pcs/ bag, 10 bags/box, 10boxes/carton BTN1053A3-0-TB-G TO-92 (Pb-free lead plating and halogen-free package) 2000 pcs / Tape & Box

CYStech Electronics Corp. Spec. No. : C818A3 Issued Date : 2013.05.22 Revised Date : 2013.06.25 Page No. : 3/7 BTD882SA3 CYStek Product Specification Typical Characteristics Emitter Grounded Output Characteristics 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0123456 Collector-to-Emitter Voltage---VCE(V) Collector Current---IC(A) 200uA 300uA 400uA 500uA 1mA IB=100uA Emitter Grounded Output Characteristics 0.2 0.4 0.6 0.8 1.2 1.4 1.6 1.8 0123456 Collector-to-Emitter Voltage---VCE(V) Collector Current---IC(A) 1mA 1.5mA 2mA 2.5mA 5mA IB=500uA Emitter Grounded Output Characteristics 0.5 1.5 2.5 0123456 Collector-to-Emitter Voltage---VCE(V) Collector Current---IC(A) IB=2mA 4mA 6mA 10mA 20mA Emitter Grounded Output Characteristics 0.5 1.5 2.5 3.5 0123456 Collector-to-Emitter Voltage---VCE(V) Collector Current---IC(A) IB=5mA 10mA 20mA 50mA Current Gain vs Collector Current 100 1000 10000 100 1000 10000 Collector Current---IC(mA) Current Gain---HFE 75℃ 25℃ 125℃ VCE=1V Current Gain vs Collector Current 100 1000 10000 100 1000 10000 Collector Current---IC(mA) Current Gain---HFE 75℃ 25℃ 125℃ VCE=2V

CYStech Electronics Corp. Spec. No. : C818A3 Issued Date : 2013.05.22 Revised Date : 2013.06.25 Page No. : 4/7 BTD882SA3 CYStek Product Specification Typical Characteristics(Cont.) Current Gain vs Collector Current 100 1000 10000 100 1000 10000 Collector Current---IC(mA) Current Gain---HFE 75℃ 25℃125℃ VCE=5V Saturation Voltage vs Collector Current 100 1000 1 10 100 1000 10000 Collector Current---IC(mA) Saturation Voltage---(mV) VCESAT@IC=10IB 125℃ 75℃ 25℃ Saturation Voltage vs Collector Current 100 1000 1 10 100 1000 10000 Collector Current---IC(mA) Saturation Voltage---(mV) 125℃ 75℃ 25℃ VCESAT@IC=20IB Saturation Voltage vs Collector Current 100 1000 1 10 100 1000 10000 Collector Current---IC(mA) Saturation Voltage---(mV) 125℃ 75℃ 25℃ VCESAT@IC=25IB Saturation Voltage vs Collector Current 100 1000 1 10 100 1000 10000 Collector Current---IC(mA) Saturation Voltage---(mV) VCESAT@IC=50IB 125℃ 75℃ 25℃ Saturation Voltage vs Collector Current 100 1000 10000 1 10 100 1000 10000 Collector Current---IC(mA) Saturation Voltage---(mV) 125℃ 75℃ 25℃ VCESAT@IC=100IB

CYStech Electronics Corp. Spec. No. : C818A3 Issued Date : 2013.05.22 Revised Date : 2013.06.25 Page No. : 5/7 BTD882SA3 CYStek Product Specification Typical Characteristics(Cont.) On Voltage vs Collector Current 100 1000 100 1000 10000 Collector Current---IC(mA) On Voltage---(mV) 125℃ VCE=2V 75℃ 25℃ Capacitance vs Reverse-biased Voltage 100 1000 0.1 1 10 100 Reverse-biased Voltage---VR(V) Capacitance---(pF) Cib Cob Power Derating Curve 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 50 100 150 200 Ambient Temperature---TA(℃) Power Dissipation---PD(W) Safe Operating Area 100 1000 10000 1 10 100 1000 Forward Voltage---VCE(V) Forward Current---IC(mA) PT=100ms PT=1ms PT=200μs Non-repetitive pulse TA=25°C

CYStech Electronics Corp. Spec. No. : C818A3 Issued Date : 2013.05.22 Revised Date : 2013.06.25 Page No. : 6/7 BTD882SA3 CYStek Product Specification TO-92 Taping Outline Millimeters DIM Item Min. Max. A Component body height 4.33 4.83 D Tape Feed Diameter 3.80 4.20 D1 Lead Diameter H2AH2AH2H2 D2 A H W L P F1F2 D1 D T 0.36 0.53 D2 Component Body Diameter 4.33 4.83 F1,F2 Component Lead Pitch 2.40 2.90 F1,F2 F1-F2 - ±0.3 H Height Of Seating Plane 15.50 16.50 H1 Feed Hole Location 8.50 9.50 H2 Front To Rear Deflection - 1 H2A Deflection Left Or Right - 1 H3 Component Height - 27 H4 Feed Hole To Bottom Of Component - 21 L Lead Length After Component Removal - 11 L1 Lead Wire Enclosure 2.50 - P Feed Hole Pitch 12.50 12.90 P1 Center Of Seating Plane Location 5.95 6.75 P2 4 Feed Hole Pitch 50.30 51.30 T Over All Tape Thickness - 0.55 T1 Total Taped Package Thickness - 1.42 T2 Carrier Tape Thickness 0.36 0.68 W Tape Width 17.50 19.00 W1 Adhesive Tape Width 5.00 7.00 - 20 pcs Pitch 253 255

CYStech Electronics Corp. Spec. No. : C818A3 Issued Date : 2013.05.22 Revised Date : 2013.06.25 Page No. : 7/7 BTD882SA3 CYStek Product Specification Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 5 +1/-1 seconds 260 +0/-5 °C Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3°C/second max. 3°C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds Time maintained above: −Temperature (TL) − Time (tL) 183°C 60-150 seconds 217°C 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C 260 +0/-5 °C Time within 5°C of actual peak temperature(tp) 10-30 seconds 20-40 seconds Ramp down rate 6°C/second max. 6°C/second max. Time 25 °C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface.

CYStech Electronics Corp. Spec. No. : C818A3 Issued Date : 2013.05.22 Revised Date : 2013.06.25 Page No. : 8/7 BTD882SA3 CYStek Product Specification TO-92 Dimension *: Typical Inches Millimeters Inches Millimeters N1053 Marking: A D B C I α1 E F GH

2 Date Code

Style: Pin 1.Emitter 2.Collector 3.Base 3-Lead TO-92 Plastic Package CYStek Package Code: A3 D 0.0142 0.0220 0.36 0.56 α1 - *5° - *5° F 0.1323 0.1480 3.36 3.76 α3 - *2° - *2° Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:

  • Lead: Pure tin plated.
  • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice:
  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
  • CYStek reserves the right to make changes to its products without notice.
  • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.