BTM7755G

BTM7755G INFINEON | Alldatasheet

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Technical content

Data Sheet, Rev. 2.0, May 2010 Automotive Power

Data Sheet 2 Rev. 2.0, 2010-05-28 High Current H-Bridge BTM7755G Table of Contents

BTM7755G PG-DSO-36-29 BTM7755G Data Sheet 3 Rev. 2.0, 2010-05-28 High Current H-Bridge Trilith IC 3G BTM7755G 1O v e r v i e w

Features

• Integrated high current H-Bridge
• Path resistance of max. 295 m Ω @ 150 °C (typ. 150 mΩ @ 25 °C)
• Low quiescent current of typ. 5µA @ 25 °C
• Current limitation level of 12 A typ. (8 A min.)
• Driver circuit with logic inputs
• Status flag diagnosis
• Overtemperature shut down with latch behaviour
• Overvoltage lock out
• Undervoltage shut down
• Switch-mode current limitation for reduced power dissipation in overcurrent situation
• Integrated dead time generation
• Operation up to 28V
• Green Product (RoHS compliant)
• AEC Qualified

Description

The BTM7755G is a fully integrated high current H-bridge for motor drive applications. It contains two p-channel highside MOSFETs and two n-channel lowside MOSFETs with an integrated driver IC in one package. Due to the p-channel highside switches the need for a charge pump is eliminated thus minimizing EMI. Interfacing to a microcontroller is made easy by the integrated driver IC which features logic level inputs, diagnosis, dead time generation and protection against overtemperature, overvoltage, undervoltage, overcurrent and short circuit. The BTM7755G provides an optimized solution for protected high current motor drives with very low board space consumption.

Data Sheet 4 Rev. 2.0, 2010-05-28

2 Block Diagram

Overcurr. Detection HS2 Overcurr. Detection LS2 Gate Driver LS Gate Driver HS Overvolt. detection Undervolt. detection GND OUT1 VS Overcurr. Detection HS1 Overcurr. Detection LS1 Overtemp. detection STIN1 IN2 INH Gate Driver LS Gate Driver HS LS offHS off LS off HS offDigital Logic HS1 HS2 LS1 LS2 Figure 1 Block Diagram 3T e r m s following figure shows the terms used in this data sheet. INH IN2 IN1 VS GND OUT2 OUT1 ST VST VINH VIN1 VIN2 VOUT IOUT , ID, IL VDS(HS) VSD(LS) VSD(LS) VOUT IIN1 IIN2 IINH IST IGND , ID(LS) IS , -ID(HS) VDS(HS)VS IOUT , ID, IL Figure 2 Terms

Data Sheet 5 Rev. 2.0, 2010-05-28 High Current H-Bridge BTM7755G Pin Configuration

4 Pin Configuration

4.1 Pin Assignment

Figure 3 Pin Configuration BTM7755G

4.2 Pin Definitions and Functions

Pins written in bold type need power wiring. Pin Symbol Function 1..4, 33..36 OUT1 Output of first half bridge 5..8, 23..26 GND Ground

9 IN1 Input of first half bridge

10 IN2 Input of second half bridge

11..14, 29..32 VS Supply, all pins to be connected and shorted externally 15..22 OUT2 Output of second half bridge

27 INH Inhibit pin, to set device in sleep/stand-by mode

28 ST Status signal, open drain output

General Product Characteristics Data Sheet 6 Rev. 2.0, 2010-05-28

5 General Product Characteristics

5.1 Absolute Maximum Ratings

Tj = -40 °C to +150 °C; all voltages with respect to ground (unless otherwise specified) Pos. Parameter Symbol Limit Values Unit Conditions Min. Max. Supply voltage VS -0.3 45 V – Logic Input Voltage VIN1,VIN2, VINH -0.3 5.5 V – HS/LS continuous drain current ID(HS) ID(LS) -4 4 A TC < 85°C switch active Voltage at ST pin VST -0.3 45 V – ST pin continuous current IST 0 2 mA – ST pin peak current IST 0 4 mA tpeak < 10µs Thermal Maximum Ratings Junction temperature Tj -40 150 °C – Storage temperature Tstg -55 150 °C – ESD Susceptibility ESD susceptibility IN1, IN2, ST, INH OUT1, OUT2, GND, VS VESD kV 2) HBM according to EIA/JESD 22-A 114B (1.5 k Ω, 100pF) HBM2) Note: Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Note: Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are not designed for continuous repetitive operation. Absolute Maximum Ratings 1) 1) Not subject to production test, specified by design. 5.1.1 5.1.2 5.1.3 5.1.4 5.1.5 5.1.6 5.1.7 5.1.8 5.1.9

Data Sheet 7 Rev. 2.0, 2010-05-28 High Current H-Bridge BTM7755G General Product Characteristics Maximum Single Pulse Current 0.0001 0.001 0.01 0.1 1 10 100 tpulse [s] Imax [A] Figure 4 BTM7755G Maximum Single Pulse Current ( TC = Tj(0) < 85°C) This diagram shows the maximum single pulse curr ent that can be driven for a given pulse time tpulse. The maximum reachable current may be smaller depending on the current limitation level. Pulse time may be limited due to thermal protection of the device.

5.2 Functional Range

Pos. Parameter Symbol Limit Values Unit Conditions Min. Max. Supply Voltage Range for Normal Operation VS(nor) 8 18 V VS pins shorted Extended Supply Voltage Range for Operation VS(ext) 5.5 28 V VS pins shorted; Parameter deviations possible; 1) Overtemperature protection av ailable up to supply voltage VS = 18V. Junction Temperature Tj -40 150 °C – Note: Within the functional range the IC operates as described in the circuit description. The electrical characteristics are specified within the conditions given in the related electrical characteristics table. 5.2.1 5.2.2 5.2.3

General Product Characteristics Data Sheet 8 Rev. 2.0, 2010-05-28

5.3 Thermal Resistance

Note: This thermal data was generated in accordance with JEDEC JESD51 standards. For more information, go to www.jedec.org. Pos. Parameter Symbol Limit Values Unit Conditions Min. Typ. Max. Thermal Resistance Junction to Soldering Point, Low Side Switch RthjSP(LS) = ΔTj(LS)/ Pv(LS) RthjSP(LS) – – 29 K/W 1) Not subject to production test, specified by design. Thermal Resistance Junction to Soldering Point, High Side Switch RthjSP(HS) = ΔTj(HS)/ Pv(HS) RthjSP(HS) – – 29 K/W 1) Thermal Resistance Junction to Soldering Point, both switches RthjSP= max[ΔTj(HS), ΔTj(LS)] / (Pv(HS) + Pv(LS)) RthjSP – – 29 K/W 1) Thermal Resistance Junction-Ambient Rthja – 46 – K/W 1) 2) Specified Rthja value is according to Jedec JESD51-2, -7 at natural convection on FR4 2s2p board; The product (chip+package) was simulated on a 76.2 x 114.3 x 1.5 mm board with 2 inner copper layers (2 x 70µm Cu, 2 x 35µm Cu). ; 2) Transient thermal impedance Zthja Figure 5 is showing the typical transient thermal impedance of high side or low side switch of BTM7755G mounted according to JEDEC JESD51-7 at natural convection on FR4 2s2p board. The device (chip+package) was simulated on a 76.2 x 114.3 x 1.5 mm board with 2 inner copper layers (2 x 70µm Cu, 2 x 35µm Cu). For the simulation each chip was separately powered with 1W at an ambient temperature Ta of 85°C. 0,001 0,01 0,1 1 10 100 1000 tpuls e [s] Zth-ja [K/W] High side sw itch / Low side sw itch Figure 5 Typical transient thermal impedance of BTM7755G on JESD51-7 2s2p board (1W each chip (separately heated), Ta = 85°C, single pulse) 5.3.1 5.3.2 5.3.3 5.3.4

Data Sheet 9 Rev. 2.0, 2010-05-28 High Current H-Bridge BTM7755G Block Description and Characteristics 6B l o c k Description and Characteristics

6.1 Supply Characteristics

Pos. Parameter Symbol Limit Values Unit Test Conditions Min. Typ. Max. General Supply Current IS(on) – 5 9.5 mA VINH or VIN1 or VIN2 = 5 V DC-mode normal operation (no fault condition) Quiescent Current IS(off) – 5 15 µA VINH = VIN1 = VIN2 = 0 V Tj < 85 °C; 1) Not subject to production test, specified by design. – – 30 µA VINH = VIN1 = VIN2 = 0 V -40 0 40 80 1 20 1 60 T IS(off) [µA] [°C] Figure 6 Typical Quiescent Current vs. Junction Temperature (typ. @ VS = 13.5V) VS = 8 V to 18 V, Tj = -40 °C to +150 °C, IL = 0A, VS pins shorted, all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) 6.1.1 6.1.2

Data Sheet 10 Rev. 2.0, 2010-05-28 High Current H-Bridge BTM7755G Block Description and Characteristics

6.2 Power Stages

The power stages of the BTM7755G consist of p-channel vertical DMOS transistors for the high side switches and n-channel vertical DMOS transistors for the low side switches. All protection and diagnostic functions are located in a separate control chip. Both switches, high side a nd low side, allow active freewheeling and thus minimize power dissipation in the forward operation of the integrated diodes. The on state resistance RON is dependent on the supply voltage VS as well as on the junction temperature Tj. The typical on state resistance characteristics are shown in Figure 7. 10 0 12 0 14 0 16 0 4 8 12 16 2 0 2 4 2 8 VS [V] RON( HS) [mΩ] Tj = 150°C Tj = 25°C Tj = -40°C High Side Switch 10 0 12 0 14 0 16 0 18 0 200 220 4 8 1 2 1 6 20 24 28 Tj = 150°C Tj = 25°C Tj = -40°C Low Side Switch VS [V] RON(LS) [mΩ] Figure 7 Typical On State Resistance vs. Supply Voltage

Data Sheet 11 Rev. 2.0, 2010-05-28 High Current H-Bridge BTM7755G Block Description and Characteristics 6.2.1 Pos. Parameter Symbol Limit Values Unit Test Conditions Min. Typ. Max. On state high side resistance RON(HS) 115 mΩ IOUT = 1 A VS = 13.5 V Tj = 25 °C; 1) Not subject to production test, specified by design. Leakage current high side IL(LKHS) µA VINH = VIN1 = VIN2 = 0 V VOUT = 0 V Tj < 85 °C; 1) Tj = 150 °C Reverse diode forward-voltage high side 2) Due to active freewheeling diode is conducting only until related switch is on VDS(HS) 0.9 0.8 0.6 0.8 V IOUT = -1 A Tj = -40 °C; 1) Tj = 25 °C; 1) Tj = 150 °C Low Side Switch - Static Characteristics On state low side resistance RON(LS) 150 180 mΩ IOUT = -1 A VS = 13.5 V Tj = 25 °C; 1) Tj = 150 °C Leakage current low side -IL(LKLS) µA VINH = VIN1 = VIN2 = 0 V VOUT = VS Tj < 85 °C; 1) Tj = 150 °C Reverse diode forward-voltage low side 2) VSD(LS) 0.9 0.8 0.6 0.8 V IOUT = 1 A Tj = -40 °C; 1) Tj = 25 °C; 1) Tj = 150 °C Tj = 150 °C Power Stages - Static Characteristics VS = 8 V to 18 V, Tj = -40 °C to +150 °C, VS pins shorted, all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) High Side Switch - Static Characteristics 6.2.1 6.2.2 6.2.3 6.2.4 6.2.5 6.2.6

Data Sheet 12 Rev. 2.0, 2010-05-28 High Current H-Bridge BTM7755G Block Description and Characteristics

6.2.2 Switching Times

t t 90% 40% ΔVOUT 90% 40% tdr(HS) tr(HS) tdf(HS) tf(HS) ΔVOUT Figure 8 Definition of switching times high side (R load to GND) IN VOUT t t 60% 10% 60% 10% ΔVOUT tdf(LS) tf(LS) ΔVOUT tdr(LS) tr(LS) Figure 9 Definition of switching times low side (R load to VS) Due to the timing differences for the rising and the falling edge there will be a slight difference between the length of the input pulse and the length of the output pulse. It can be calculated using the following formulas:

• ΔtHS = (tdr(HS) + 0.2 tr(HS)) - (tdf(HS) + 0.8 tf(HS))
• ΔtLS = (tdf(LS) + 0.2 tf(LS)) - (tdr(LS) + 0.8 tr(LS)).

Data Sheet 13 Rev. 2.0, 2010-05-28 High Current H-Bridge BTM7755G Block Description and Characteristics 6.2.3 VS = 13.5V, Tj = +150 °C, RLoad = 12 Ω, VINH = 5V, VS pins shorted, all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) Pos. Parameter Symbol Limit Values Unit Test Conditions Min. Typ. Max. High Side Switch Dynamic Characteristics Rise-time of HS tr(HS) 5 15 25 µs – Slew rate HS on ΔVOUT/ tr( HS) – 0.4 – V/µs – Switch on delay time HS tdr(HS) 50 95 140 µs – Fall-time of HS tf(HS) 5 15 25 µs – Slew rate HS off -ΔVOUT/ tf(HS) – 0.4 – V/µs – Switch off delay time HS tdf(HS) 25 55 80 µs – Low Side Switch Dynamic Characteristics Rise-time of LS tr(LS) 10 20 30 µs – Slew rate LS switch off ΔVOUT/ tr(LS) – 0.4 – V/µs – Switch off delay time LS tdr(LS) 30 60 90 µs – Fall-time of LS tf(LS) 10 20 30 µs – Slew rate LS switch on -ΔVOUT/ tf(LS) – 0.4 – V/µs – Switch on delay time LS tdf(LS) 40 80 120 µs – Power Stages - Dynamic Characteristics

6.3 Protection Functions

The device provides integrated protection functions. These are designed to prevent IC destruction under fault conditions described in the data s heet. Fault conditions are considered as “outside” normal operating range. Protection functions are not to be used for continuous or repetitive operation, with the exception of the current limitation ( Chapter 6.3.4). Overvoltage, overtemperature and overcurr ent are indicated by switching the open drain output ST to low. Although the slew rate is defined as above ( Chapter 6.2.3), in case of overvoltage and overcurrent the device will have a higher slew rate of typically 11V/µs. In the following the protection functions are listed in order of their priority. Overvoltage lock out overrides all other error modes.

6.3.1 Overvoltage Lock Out

To assure a high immunity against overvoltages (e.g . load dump conditions) the device shuts both lowside MOSFETs off and turns both highside MOSFET on, if the supply voltage VS is exceeding the over voltage protection level VOV(OFF). The IC operates in normal mode again with a hysteresis VOV(HY) if the supply voltage decreases below the switch-on voltage VOV(ON). This behavior of the BTM7755G will lead to freewheeling in highside during over voltage. 6.2.7 6.2.8 6.2.9 6.2.10 6.2.11 6.2.12 6.2.13 6.2.14 6.2.15 6.2.16 6.2.17 6.2.18

Data Sheet 14 Rev. 2.0, 2010-05-28 High Current H-Bridge BTM7755G Block Description and Characteristics

6.3.2 Undervoltage Shut Down

To avoid uncontrolled motion of the driven motor at low vo ltages the device shuts off (both outputs are tri-state), if the supply voltage VS drops below the s witch-off voltage VUV(OFF). In this case all latches will be reset. The IC becomes active again with a hysteresis VUV(HY) if the supply voltage rises above the switch-on voltage VUV(ON).

6.3.3 Overtemperature Protection

The BTM7755G is protected against overtemperature by integrated temperature sensors. Each half bridge, which consists of one high side and one low side switch, is protected by one temperature sensor located in the high side switch. Both temperature sensors function independently . A detection of overtemperature through temperature sensor leads to a shut down of both switches in the half bridge. This state is latched until the device is reset by a low signal with a minimum length of treset simultaneously at the INH pin and both IN pins, provided that its temperature has decreased at least the thermal hysteresis ΔT in the meantime. Overtemperature protection is available up to supply voltage VS = 18V. For sufficient over temperature protection please consider also operation below the limitations outlined in Figure 4 and Figure 5. Repetitive use of the overtemperature protection might reduce lifetime.

6.3.4 Current Limitation

The current in the bridge is measured in all four switches. As soon as the current in forward direction in one switch is reaching the limit ICLx, this switch is deactivated for tCLS. In case of INH = 5V (high) the other switch of the same half bridge is activated for the same time ( tCLS). During that time all changes at the related IN pin are ignored. However, the INH pin can still be used to switch all MOSFETs off. After tCLS the switches return to their initial setting. The error signal at the ST pin is reset after 1.5 * tCLS if no overcurrent state is detected in the meantime. Unintentional triggering of the current limitation by shor t current spikes (e.g. inflic ted by EMI coming from the motor) is suppressed by internal filter circuitry. Due to thresholds and reaction delay times of the filter circuitry the effective current limitation level ICLx depends on the slew rate of the load current di/dt as shown in Figure 11. IL t ICLx tCLS ICLx0 1.5*t CLS t O O VST Figure 10 Timing Diagram Current Limitation and Status Flag

Data Sheet 16 Rev. 2.0, 2010-05-28 High Current H-Bridge BTM7755G Block Description and Characteristics

6.3.5 Short Circuit Protection

The device provides embedded protection functions against

• output short circuit to ground
• output short circuit to supply voltage
• short circuit of load The short circuit protection is realized by the previously described current limitation in combination with the over- temperature shut down (see Chapter 6.3.3) of the device. 6.3.6 Pos. Parameter Symbol Limit Values Unit Test Conditions Min. Typ. Max. Over Voltage Lock Out Switch-ON voltage VOV(ON) 27.8 – – V Vs decreasing Switch-OFF voltage VOV(OFF) 28 – 30 V Vs increasing ON/OFF hysteresis VOV(HY) – 0.2 – V 1) Not subject to production test, specified by design. Under Voltage Shut Down Switch-ON voltage VUV(ON) – – 5.5 V VS increasing Switch-OFF voltage VUV(OFF) 4.0 – 5.4 V VS decreasing ON/OFF hysteresis VUV(HY) – 0.2 – V 1) Thermal Shut Down Thermal shut down junction temperature TjSD 155 175 200 °C 1); VS ≤ 18 V Thermal switch on junction temperature TjSO 153 – 190 °C 1) Thermal hysteresis ΔT – 7 – °C 1) Reset pulse at INH and IN pin (INH, IN1 and IN2 low) treset 8 – – µs 1) Current Limitation Current limitation detection level high side ICLH0 8 12 16 A VS = 13.5 V Current limitation detection level low side ICLL0 8 12 16 A VS = 13.5 V Shut off time for HS and LS tCLS 50 100 200 µs VS = 13.5 V, Tj = 25 °C Electrical Characteristics - Protection Functions VS = 8 V to 18 V, Tj = -40 °C to +150 °C, VS pins shorted, all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) 6.3.1 6.3.2 6.3.3 6.3.4 6.3.5 6.3.6 6.3.7 6.3.8 6.3.9 6.3.10 6.3.11 6.3.12 6.3.13

Data Sheet 17 Rev. 2.0, 2010-05-28 High Current H-Bridge BTM7755G Block Description and Characteristics

6.4 Control and Diagnostics

6.4.1 Input Circuit

The control inputs INx and INH consist of TTL/CMOS compatible schmitt triggers with hysteresis which control the integrated gate drivers for the MOSFETs. To set the device in stand-by mode, INH and INx pins need to be all connected to GND. When the INH is hi gh, in each half bridge one of the two power switches (HSx or LSx) is switched on, while the other power switch is switched off, depending on the status of the INx pin. When INH is low, a high INx signal will turn the corresponding highside switches on. This provides customer the possibility to switch on one high side switch while keeping the other switches off and therefore to do an open load detection together with external circuitry (see also Chapter 7 - Application Information). A low on all INx and INH signal will turn off both power switches. To drive the lo gic inputs no external driver is needed, therefore the BTM7755G can be interfaced directly to a microcontroller.

6.4.2 Dead Time Generation

In bridge applications it has to be assured that the highside and lowside MOSFET are not conducting at the same time, connecting directly the battery voltage to GND. This is assured by a circuit in the driver IC, which senses the status of the MOSFETs to ensure that the high or low side switch can be switched on only if the corresponding low or high side switch is completely turned off.

6.4.3 Status Flag Diagnosis

The status pin provides diagnostic signal of the device. It is an open drain output which requires a pull-up resistor. In case of overvoltage, overtemperature and overcurrent situation the status output is switched to low. In case of current limitation the status output is activated for 1.5 * tCLS.

Data Sheet 18 Rev. 2.0, 2010-05-28 High Current H-Bridge BTM7755G Block Description and Characteristics

6.4.4 Truth Table

Device State Inputs Outputs Mode INH IN1 IN2 HS1 LS1 HS2 LS2 ST Normal operation 0 0 0 OFF OFF OFF OFF 1 Stand-by mode, reset 1 0 0 OFF ON OFF ON 1 – 1 0 1 OFF ON ON OFF 1 – 1 1 0 ON OFF OFF ON 1 – 1 1 1 ON OFF ON OFF 1 – Open-Load detection mode 0 0 1 OFF OFF ON OFF 1 Enable Open-load detection 0 1 0 ON OFF OFF OFF 1 Enable Open-load detection 0 1 1 ON OFF ON OFF 1 Over-voltage (OV) X X X ON OFF ON OFF 0 Shut-down of LSS, HSS activated, error detected Under-voltage (UV) X X X OFF OFF OFF OFF 1 UV lockout, reset Overtemperature or short circuit of HSS or 1) In short circuit of HSS or LSS, the ju nction temperature will arise and as soon as the over temperature shut down threshold is reached the device will shut down and latch the status. Short circuit of HSS and LSS itself won’t be detected as failure. LSS 1) 0 0 0 OFF OFF OFF OFF 1 Stand-by mode, reset of latch

1 X X OFF OFF OFF OFF 0 Shut-down with latch, error

1 0 X ON OFF X X 0 Short Circuit in LS1 detected, half bridge 2 operates in normal mode 1 1 X OFF ON X X 0 Short Circuit in HS1 detected, half bridge 2 operates in normal mode 0 1 X OFF OFF X X 0 Short Circuit in HS1 detected Current limitation mode half bridge 2

1 X 0 X X ON OFF 0 Short Circuit in LS2 detected,

half bridge 1 operates in normal mode

1 X 1 X X OFF ON 0 Short Circuit in HS2 detected,

half bridge 1 operates in normal mode

0 X 1 X X OFF OFF 0 Short Circuit in HS2 detected

Inputs: Switches Status Flag ST: 0 = Logic LOW OFF = switched off 0 = Logic LOW (error) 1 = Logic HIGH ON = switched on 1 = Logic HIGH (normal operation) X = 0 or 1 X = switched on or off

Data Sheet 19 Rev. 2.0, 2010-05-28 High Current H-Bridge BTM7755G Block Description and Characteristics

6.4.5 Electrical Characteristi cs - Control and Diagnostics

Pos. Parameter Symbol Limit Values Unit Test Conditions Min. Typ. Max. Control Inputs (IN and INH) High level threshold voltage INH, IN1, IN2 VINH(H), VIN1(H), VIN2(H) – 1.6 2 V – Low level threshold voltage INH, IN1, IN2 VINH(L), VIN1(L), VIN2(L) 1.1 1.4 – V – Input voltage hysteresis VINHHY,VINHY – 200 – mV 1) Not subject to production test, specified by design. Input current IINH(H), IIN1(H), IIN2(H) – 30 200 µA VIN1,VIN2,VINH = 5.5 V Input current IINH(L), IIN1(L), IIN2(L) – 25 125 µA VIN1, VIN2, VINH = 0.4 V Status Signal Status Low output voltage VST(LOW) – – 0.4 V IST = 1.6 mA Status leakage current IST(LK) – – 1 µA VST = 0...28 V VS = 8 V to 18 V, Tj = -40 °C to +150 °C, VS pins shorted, all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) 6.4.1 6.4.2 6.4.3 6.4.4 6.4.5 6.4.6 6.4.7

Data Sheet 20 Rev. 2.0, 2010-05-28 High Current H-Bridge BTM7755G

Application Information

7 Application Information

Note: The following information is given as a hint for the implementation of the device only and shall not be regarded as a description or warranty of a certain functionality, condition or quality of the device. XC866 TLE 4278G VS Reset Vss WO RO Q D GND I Microcontroller Reverse Polarity Protection Voltage Regulator I/O I/O I/OI/O CD 47nF CQ 22µF 10kΩ e.g. IPD50P03P4L-11 VS OUT1 GND BTM7755G CSc VS OUT2 GND LS2LS1 HS2HS1 M RD1 RD2 CS DZ1 10V I/O I/O I/O Vdd RST 4.7kΩ RIN1 4.7kΩ RIN2 4.7kΩ RINH 4.7kΩ INH IN2 ST IN1 Figure 13 Application Diagram Note: This is a very simplified example of an application circuit. The function must be verified in the real application.

7.1 Application and La yout Considerations

Due to the fast switching times for hi gh currents, special care has to be taken during the PCB layout. Stray inductances have to be minimized in the power bridge design as it is necessary in all switched high power bridges. The BTM7755G has no separate pin for power ground and logic ground. Therefore it is recommended to assure that the offset between power ground and logic ground pins of the device is minimized. It is also necessary to ensure that all VS pins are at the same voltage level. Therefore the VS pins need to be shorted together. Voltage differences between the VS pins may cause parameter deviations (such as reduced current limits) up to a latched shutdown of the device with error signal on the ST pin, similar to overtemperature shutdown. Due to the fast switching behavior of the device in current limitation mode or overvoltage lock out a low ESR electrolytic capacitor Cs of at least 100 µF from VS to GND is re commended. This prevents destructive voltage peaks and drops on VS. This is recommended for both PWM and non PWM controlled applications. The value of the capacitor must be verified in the real application. In addition a ceramic capacitor Csc from VS to GND close to each device is recommended to provide current for the switching phase via a low inductance path and ther efore reducing noise and ground bounce. A reasonable value for this capacitor would be about 470 nF.

Data Sheet 21 Rev. 2.0, 2010-05-28 It is recommended to do the freewheeling in the low side path to ensure a proper function and avoid unintended overtemperature detection and shutdown. For proper operation it is also recommended to put a pull-down resistor open load detection. Considerations for Open Load Detection Mode As mentioned in Chapter 6.4.1 both high side switches can be switched on independently while all other switches are off. This will be realized by setting the corresponding IN signal to high while INH and the other IN are low. Device State Inputs Outputs Mode INH IN1 IN2 HS1 LS1 HS2 LS2 ST Open-Load detection mode 0 0 1 OFF OFF ON OFF 1 HS2 active 0 1 0 ON OFF OFF OFF 1 HS1 active 0 1 1 ON OFF ON OFF 1 both HSx are active Together with the recommended pull-down resistors on the outputs OUTx to GND this provides the possibility to do an open load detection in H-bridge configuration. In case of one high side is active wh ile the other half bridge is off (HS off and LS off) a current of up to 2mA will be sourced out of the OUT of the high ohmic half bridge. This has to be considered while choosing the right value of the pull-down resistor.

Data Sheet 22 Rev. 2.0, 2010-05-28 High Current H-Bridge BTM7755G Package Outlines

8 Package Outlines

0.65 9.73 0.45 1.67 2) Does not include dambar protrusion of 0.05 max. per side 1) Does not include plastic or metal protrusion of 0.15 max. per side 1 18 36 19 0.65 0.33 0.2 STAND OFF 2.45 2.65 MAX. -0.2 -0.1 0.23 +0.09 0.35 x 45˚ -0.2 1)7.6 10.3 0.7±0.2 8˚ MAX. ±0.3 Index Marking 1)12.8-0.2

0.17 M C A-B D 36x

±0.08 2) C D A B 1.1 C0.1 36x SEATING PLANE17 x 0.65 = 11.05 Ejector Mark Depth 0.2 MAX. Footprint Figure 14 PG-DSO-36-29 (Plastic Green Dual Small Outline Package) Green Product (RoHS compliant) To meet the world-wide customer requirements for environmentally friendly products and to be compliant with government regulations the device is available as a green product. Gree n products are RoHS-Compliant (i.e Pb-free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020). For further information on alternative packages, please visit our website: http://www.infineon.com/packages. Dimensions in mm

Revision History

Data Sheet 23 Rev. 2.0, 2010-05-28

9 Revision History

2.0 2010-05-28 Initial version Data Sheet

81726 Munich, Germany

© 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.