BTD5213J3 CYSTEKEC | Alldatasheet

Document overview

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Technical content

Features

  • Low collector saturation voltage
  • High breakdown voltage, VCEO=80V (min.)
  • High collector current, IC(max)=1A (DC)
  • Pb-free lead plating package Symbol Outline TO-252(DPAK) BTD5213J3 B：Base C：Collector E：Emitter B C E Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-Base V oltage VCBO 100 V Collector-Emitter V oltage VCEO 80 V Emitter-Base V oltage VEBO 5 V Collector Current (DC) IC 1 A Collector Current (Pulse) ICP 2 (Note) A Power Dissipation @ TA=25°C 1 W PD Power Dissipation @ TC=25°C 10 W Operating Junction and Storage Temperature Range Tj ; Tstg -55~+150 °C Note : Pulse test, PW ≤ 10ms, Duty ≤ 50%.

CYStech Electronics Corp. Spec. No. : C304J3 Issued Date : 2010.12.06 Revised Date : 2012.05.16 Page No. : 2/7 BTD5213J3 CYStek Product Specification Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case, max Rth,j-c 12.5 °C/W Thermal Resistance, Junction-to-ambient, max Rth,j-a 125 °C/W Characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Test Conditions BVCBO 100 - - V IC=50μA BVCEO 80 - - V IC=1mA BVEBO 5 - - V IE=50μA ICBO - - 1 μA VCB=80V , IE=0 IEBO - - 1 μA VEB=4V , IC=0 *VCE(SAT) - 0.15 0.4 V IC=500mA, IB=20mA *hFE 160 - 400 - VCE=5V , IC=100mA fT - 100 - MHz VCE=10V , IC=50mA, f=100MHz Cob - 20 - pF VCB=10V , IE=0A, f=1MHz *Pulse Test: Pulse Width ≤380μs, Duty Cycle≤2%

Ordering Information

(Pb-free lead plating and halogen-free package) 2500 pcs / Tape & Reel

CYStech Electronics Corp. Spec. No. : C304J3 Issued Date : 2010.12.06 Revised Date : 2012.05.16 Page No. : 3/7 BTD5213J3 CYStek Product Specification Typical Characteristics Current Gain vs Collector Current 100 1000 1 10 100 1000 Collector Current---IC(mA) Current Gain---HFE HFE@VCE=2V HFE@VCE=3V Saturation Voltage vs Collector Current 100 1000 1 10 100 1000 Collector Current---IC(mA) Saturation Voltage---(mV) VCESAT@IC=20IB VBESAT@IC=20IB On Voltage vs Collector Current 100 1000 1 10 100 1000 Collector Current---IC(mA) On Voltage---(mV) VBE(on)@VCE=2V Transition Frequency vs Collector Current 100 1000 1 10 100 1000 Collector Current---IC(mA) Transition Frequency---fT(MHz) Capacitance Characteristics 100 0.1 1 10 100 Collector Base Voltage-- VCB(V) Capacitance---Cob(pF) f=1MHz Power Derating Curve 0.2 0.4 0.6 0.8 1.2 0 25 50 75 100 125 150 175 200 Ambient Temperature---TA(℃) Power Dissipation---PD(W)

CYStech Electronics Corp. Spec. No. : C304J3 Issued Date : 2010.12.06 Revised Date : 2012.05.16 Page No. : 4/7 BTD5213J3 CYStek Product Specification Typical Characteristics(Cont.) Power Derating Curve 0 25 50 75 100 125 150 175 200 Case Temperature---TC(℃) Power Dissipation---PD(W)

CYStech Electronics Corp. Spec. No. : C304J3 Issued Date : 2010.12.06 Revised Date : 2012.05.16 Page No. : 5/7 BTD5213J3 CYStek Product Specification Reel Dimension Carrier Tape Dimension

CYStech Electronics Corp. Spec. No. : C304J3 Issued Date : 2010.12.06 Revised Date : 2012.05.16 Page No. : 6/7 BTD5213J3 CYStek Product Specification Recommended wave soldering condition Soldering Time Product Peak Temperature Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3°C/second max. 3°C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds Time maintained above: −Temperature (TL) 217°C − Time (tL) 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C 260 +0/-5 °C Time within 5°C of actual peak 10-30 seconds 20-40 seconds temperature(tp) Ramp down rate 6°C/second max. 6°C/second max. Time 25 °C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface.

CYStech Electronics Corp. Spec. No. : C304J3 Issued Date : 2010.12.06 Revised Date : 2012.05.16 Page No. : 7/7 BTD5213J3 CYStek Product Specification TO-252 Dimension Inches Millimeters Inches Millimeters DIM Min. Max. Min. Max. Marking: Style: Pin 1.Base 2.Collector 3.Emitter 4.Collector 3-Lead TO-252 Plastic Surface Mount Package CYStek Package Code: J3 Device Name Date Code D5213 □□□□ 1 2 3 DIM Min. Max. Min. Max. Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:

  • Lead : Pure tin plated.
  • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice:
  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
  • CYStek reserves the right to make changes to its products without notice.
  • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.