BTD2444L3

BTD2444L3 CYSTEKEC | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 8

Technical content

Features

• The BTD2444L3 is designed for general purpose low frequency power amplifier applications.
• Low VCE(sat), VCE(sat)=0.35V (typ), at IC / IB = 1A / 50mA
• Complementary to BTB1590L3
• Pb-free lead plating and halogen-free package Symbol Outline BTD2444L3 Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-Base V oltage VCBO 40 V Collector-Emitter V oltage VCEO 25 V Emitter-Base V oltage VEBO 6 V Collector Current (DC) IC 1 A Collector Current (Pulse) ICP 3 (Note) A Base Current IB 0.2 A Power Dissipation @TA=25℃ 1 Power Dissipation @TC=25℃ PD 3 W Operating Junction Temperature Range Tj -55~+150 °C Storage Temperature Range Tstg -55~+150 °C Note : Single pulse, Pw=10ms SOT-223 B：Base C：Collector E：Emitter

CYStech Electronics Corp. Spec. No. : C223L3 Issued Date : 2011.01.03 Revised Date : 2012.10.03 Page No. : 2/6 BTD2444L3 CYStek Product Specification Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to- ambient, max Rth,j-a 125 °C/W Thermal Resistance, Junction-to- case, max Rth,j-c 41.7 °C/W Characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Test Conditions BVCBO 40 - - V IC=100μA, IE=0 BVCEO 25 - - V IC=2mA, IB=0 BVEBO 6 - - V IE=100μA, IC=0 ICBO - - 0.5 μA VCB=30V , IE=0 IEBO - - 0.5 μA VEB=6V , IC=0 *VCE(sat)1 - 0.15 0.3 V IC=400mA, IB=20mA *VCE(sat)2 - 0.35 0.5 V IC=1A, IB=50mA *RCE(sat) - 0.35 0.5 Ω IC=1A, IB=50mA *VBE(on) - - 1 V VCE=1V , IC=1A *hFE1 180 - 390 - VCE=1V , IC=100mA *hFE2 60 - - - VCE=1V , IC=1A fT 100 - - MHz VCE=5V , IC=50mA, f=100MHz Cob - 6 - pF VCB=10V , f=1MHz *Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2%

Ordering Information

(Pb-free lead plating and halogen-freepackage) 2500 pcs / Tape & Reel

CYStech Electronics Corp. Spec. No. : C223L3 Issued Date : 2011.01.03 Revised Date : 2012.10.03 Page No. : 3/6 BTD2444L3 CYStek Product Specification Typical Characteristics Emitter Grounded Output Characteristics 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0123456 Collector-to-Emitter Voltage---VCE(V) Collector Current---IC(A) 200uA 300uA 400uA 500uA 1mA IB=100uA Emitter Grounded Output Characteristics 0.2 0.4 0.6 0.8 1.2 1.4 0123456 Collector-to-Emitter Voltage---VCE(V) Collector Current---IC(A) 1.5mA 2mA 2.5mA 5mA IB=500uA Current Gain vs Collector Current 100 1000 1 10 100 1000 10000 Collector Current---IC(mA) Current Gain---HFE Ta=125°C Ta= 75°C Ta= 25°C Ta=0°C Ta=-40°C VCE=1V Current Gain vs Collector Current 100 1000 1 10 100 1000 10000 Collector Current---IC(mA) Current Gain---HFE Ta=125°C Ta=75°C Ta=25°C Ta=0°C Ta=-40°CVCE=2V Current Gain vs Collector Current 100 1000 1 10 100 1000 10000 Collector Current---IC(mA) Current Gain---HFE Ta=125°C Ta=75°C Ta=25°C Ta=0°C Ta=-40°C VCE=5V Saturation Voltage vs Collector Current 100 1000 1 10 100 1000 10000 Collector Current---IC(mA) Saturation Voltage---(mV) Ta=125°C Ta=75°C Ta=25°C Ta=0°C Ta=-40°C VCESAT@IC=20IB

CYStech Electronics Corp. Spec. No. : C223L3 Issued Date : 2011.01.03 Revised Date : 2012.10.03 Page No. : 4/6 BTD2444L3 CYStek Product Specification Typical Characteristics(Cont.) Saturation Voltage vs Collector Current 100 1000 1 10 100 1000 10000 Collector Current---IC(mA) Saturation Voltage---(mV) Ta=125°C Ta=75°C Ta=25°C Ta=0°C Ta=-40°C VCESAT@IC=50IB Saturation Voltage vs Collector Current 100 1000 10000 1 10 100 1000 10000 Collector Current---IC(mA) Saturation Voltage---(mV) Ta=125°C Ta=75°C Ta=25°C Ta=0°C Ta=-40°C VCESAT@IC=100IB Saturation Voltage vs Collector Current 100 1000 10000 1 10 100 1000 10000 Collector Current---IC(mA) Saturation Voltage---(mV) VBESAT@IC=50IB Ta=-40°C Ta=0°C Ta=25°C Ta=75°C Ta=125°C On Voltage vs Collector Current 100 1000 10000 1 10 100 1000 10000 Collector Current---IC(mA) On Voltage---(mV) VBEON@VCE=1V Ta=-40°C Ta=0°C Ta=25°C Ta=75°C Ta=125°C Capacitance vs Reverse-biased Voltage 100 0.1 1 10 100 Reverse-biased Voltage---VR(V) Capacitance---(pF) Cib Cob Cutoff Frequency vs Collector Current 100 1000 1 10 100 1000 Collector Current---IC(mA) Cutoff Frequency---fT(MHz) VCE=10V

CYStech Electronics Corp. Spec. No. : C223L3 Issued Date : 2011.01.03 Revised Date : 2012.10.03 Page No. : 5/6 BTD2444L3 CYStek Product Specification Typical Characteristics(Cont.) Power Derating Curve 0.2 0.4 0.6 0.8 1.2 0 50 100 150 200 Ambient Temperature --- Ta(℃ ) Power Dissipation---PD(W)

CYStech Electronics Corp. Spec. No. : C223L3 Issued Date : 2011.01.03 Revised Date : 2012.10.03 Page No. : 6/6 BTD2444L3 CYStek Product Specification Reel Dimension Carrier Tape Dimension

CYStech Electronics Corp. Spec. No. : C223L3 Issued Date : 2011.01.03 Revised Date : 2012.10.03 Page No. : 7/6 BTD2444L3 CYStek Product Specification Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3°C/second max. 3°C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds Time maintained above: −Temperature (TL) − Time (tL) 183°C 60-150 seconds 217°C 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C 260 +0/-5 °C Time within 5°C of actual peak temperature(tp) 10-30 seconds 20-40 seconds Ramp down rate 6°C/second max. 6°C/second max. Time 25 °C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface.

CYStech Electronics Corp. Spec. No. : C223L3 Issued Date : 2011.01.03 Revised Date : 2012.10.03 Page No. : 8/6 BTD2444L3 CYStek Product Specification SOT-223 Dimension *: Typical Inches Millimeters Inches Millimeters 3 2 1 F B A C D E G H a1 I Style: Pin 1.Base 2.Collector 3.Emitter Marking: 3-Lead SOT-223 Plastic Surface Mounted Package CYStek Package Code: L3 Date Code Device Name □□□□ D2444 D 0.0236 0.0315 0.60 0.80 a1 *13o - *13o - E *0.0906 - *2.30 - a2 0 o 10 o 0 o 10 o F 0.2480 0.2638 6.30 6.70 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:

• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.