BTD2195L3 CYSTEKEC | Alldatasheet
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Technical content
CYStech Electronics Corp. Spec. No. : C654L3 Issued Date : 2007.02.09 Revised Date : Page No. : 1/5 BTD2195L3 CYStek Product Specification NPN Epitaxial Planar Transistor BTD2195L3
Description
The BTD2195L3 is a NPN Darlington transistor, designed for use in general purpose amplifier and low speed switching application. Pb-free package process is adopted. Equivalent Circuit Outline BTD2195L3 SOT-223 B C C E E C B E：Emitter B：Base C：Collector Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-Base V oltage VCBO 130 V Collector-Emitter V oltage VCEO 120 V Emitter-Base V oltage VEBO 5 V Collector Current (DC) IC 4 A Collector Current (Pulse) ICP 6 (Note ) A Power Dissipation @ TC=25℃ Pd 5 W Thermal Resistance, Junction to Case RθJC 25 °C/W Junction Temperature Tj 150 °C Storage Temperature Tstg -55~+150 °C Note : Single Pulse Pw≦350μs, Duty≦2%.
CYStech Electronics Corp. Spec. No. : C654L3 Issued Date : 2007.02.09 Revised Date : Page No. : 2/5 BTD2195L3 CYStek Product Specification Characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Test Conditions BVCEO 120 - - V IC=1mA, IB=0 BVCBO 140 - - V IC=100μA, IE=0 ICBO - - 100 μA VCB=100V , IE=0 ICEO - - 100 μA VCE=100V , IE=0 IEBO - - 2 mA VEB=5V , IC=0 *VCE(sat) - - 2.5 V IC=2A, IB=2mA *VBE(on) 2.3 V VCE=4V , IC=2A *hFE1 1000 - - - VCE=4V , IC=1A *hFE2 500 - - - VCE=4V , IC=2A Cob - 200 pF VCB=10V , IE=0A, f=1MHz *Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2%
Ordering Information
Device Package Shipping Marking BTD2195L3 SOT-223 (Pb-free) 2500 pcs / Tape & Reel DP
CYStech Electronics Corp. Spec. No. : C654L3 Issued Date : 2007.02.09 Revised Date : Page No. : 3/5 BTD2195L3 CYStek Product Specification Characteristic Curves Current Gain vs Collector Current 100 1000 10000 1 10 100 1000 10000 Collector Current---IC(mA) Current Gain---HFE VCE = 4V Saturation Voltage vs Collector Current 100 1000 10000 1 10 100 1000 10000 Collector Current---I C(mA) Saturation Voltage---(mV) Saturation Voltage vs Collector Current 100 1000 10000 1 10 100 1000 10000 Collector Current---I C(mA) Saturation Voltage---(mV) VBE (SAT)@IC = 250IB On voltage vs Collector Current 100 1000 10000 1 10 100 1000 10000 Collector Current---I C(mA) On voltage---(mV) VBE (ON) @VCE = 4V Power Derating Curve 0 50 100 150 200 Ambient Temperature ---TC(℃ ) Power Dissipation---PD(W)
CYStech Electronics Corp. Spec. No. : C654L3 Issued Date : 2007.02.09 Revised Date : Page No. : 4/5 BTD2195L3 CYStek Product Specification Reel Dimension Carrier Tape Dimension
CYStech Electronics Corp. Spec. No. : C654L3 Issued Date : 2007.02.09 Revised Date : Page No. : 5/5 BTD2195L3 CYStek Product Specification SOT-223 Dimension *: Typical Inches Millimeters Inches 3 2 1 F B A C D E G H a1 I Style: Pin 1.Base 2.Collector 3.Emitter Marking: 3-Lead SOT-223 Plastic Surface Mounted Package CYStek Package Code: L3 DP D 0.0236 0.0315 0.60 0.80 a1 *13o - *13o - E *0.0906 - *2.30 - a2 0 o 10 o 0 o 10 o F 0.2480 0.2638 6.30 6.70 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:
- Lead: 42 Alloy; solder plating
- Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice:
- All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
- CYStek reserves the right to make changes to its products without notice.
- CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
- CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.