BTD2195J3 CYSTEKEC | Alldatasheet

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Technical content

CYStech Electronics Corp. Spec. No. : C654J3 Issued Date : 2004.03.18 Revised Date :2009.02.04 Page No. : 1/6 BTD2195J3 CYStek Product Specification NPN Epitaxial Planar Transistor BVCEO 120V IC 4A RCESAT 600mΩ BTD2195J3

Description

The BTD2195J3 is a NPN Darlington transistor, designed for use in general purpose amplifier and low speed switching application. RoHS compliant package process is adopted. Equivalent Circuit Outline Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-Base V oltage VCBO 130 V Collector-Emitter V oltage VCEO 120 V Emitter-Base V oltage VEBO 5 V Collector Current (DC) IC 4 A Collector Current (Pulse) ICP 6 (Note ) A Pd(TA=25℃) 1.5 W Power Dissipation Pd(TC=25℃) 20 W Thermal Resistance, Junction to Ambient RθJA 83.3 °C/W Thermal Resistance, Junction to Case RθJC 6.25 °C/W Junction Temperature Tj 150 °C Storage Temperature Tstg -55~+150 °C Note : Single Pulse Pw≦350μs, Duty≦2%. BTD2195J3 TO-252 C E B B：Base B C E C：Collector E：Emitter

CYStech Electronics Corp. Spec. No. : C654J3 Issued Date : 2004.03.18 Revised Date :2009.02.04 Page No. : 2/6 BTD2195J3 CYStek Product Specification Characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Test Conditions BVCEO 120 - - V IC=1mA, IB=0 BVCBO 130 - - V IC=100μA, IE=0 ICBO - - 1 mA VCB=100V , IE=0 ICEO - - 2 mA VCE=50V , IE=0 IEBO - - 2 mA VEB=5V , IC=0 *VCE(sat) - - 1.25 V IC=2A, IB=8mA *VCE(sat) - - 1.5 V IC=2A, IB=2mA *VBE(on) 2.2 V VCE=4V , IC=2A *hFE1 600 - - - VCE=3V , IC=1A *hFE2 1000 - - - VCE=3V , IC=2A *hFE3 300 - - - VCE=3V , IC=4A Cob - 200 pF VCB=10V , IE=0A, f=1MHz *Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2%

Ordering Information

Device Package Shipping Marking BTD2195J3 TO-252 (RoHS compliant) 2500 pcs / Tape & Reel D2195

CYStech Electronics Corp. Spec. No. : C654J3 Issued Date : 2004.03.18 Revised Date :2009.02.04 Page No. : 3/6 BTD2195J3 CYStek Product Specification Characteristic Curves Current Gain vs Collector Current 100 1000 10000 1 10 100 1000 10000 Collector Current---IC(mA) Current Gain---HFE VCE = 4V Saturation Voltage vs Collector Current 100 1000 10000 1 10 100 1000 10000 Collector Current---I C(mA) Saturation Voltage---(mV) Saturation Voltage vs Collector Current 100 1000 10000 1 10 100 1000 10000 Collector Current---I C(mA) Saturation Voltage---(mV) VBE (SAT)@IC = 250IB On voltage vs Collector Current 100 1000 10000 1 10 100 1000 10000 Collector Current---I C(mA) On voltage---(mV) VBE (ON) @VCE = 4V Power Derating Curve 0.25 0.5 0.75 1.25 1.5 1.75 0 50 100 150 200 Ambient Temperature---TA(℃) Power Dissipation---PD(W) Power Derating Curve 0 50 100 150 200 Case Temperature---TC(℃) Power Dissipation---PD(W)

CYStech Electronics Corp. Spec. No. : C654J3 Issued Date : 2004.03.18 Revised Date :2009.02.04 Page No. : 4/6 BTD2195J3 CYStek Product Specification Reel Dimension Carrier Tape Dimension

CYStech Electronics Corp. Spec. No. : C654J3 Issued Date : 2004.03.18 Revised Date :2009.02.04 Page No. : 5/6 BTD2195J3 CYStek Product Specification Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 5 +1/-1 seconds 260 +0/-5 °C Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3°C/second max. 3°C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds Time maintained above: −Temperature (TL) − Time (tL) 183°C 60-150 seconds 217°C 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C 260 +0/-5 °C Time within 5°C of actual peak temperature(tp) 10-30 seconds 20-40 seconds Ramp down rate 6°C/second max. 6°C/second max. 6 minutes max. 8 minutes max. Time 25 °C to peak temperature

CYStech Electronics Corp. Spec. No. : C654J3 Issued Date : 2004.03.18 Revised Date :2009.02.04 Page No. : 6/6 BTD2195J3 CYStek Product Specification O-252 Dimension l che met che met T *: Typica Notes: aximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. there is any question with packing specification or packing method, please contact your local CYStek sales office.

  • Lead : KFC; pure tin plated
  • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 1.Controlling dimension: millimeters. 2.M 3.If Material:
  • YStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • YStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Important Notice:
  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
  • CYStek reserves the right to make changes to its products without notice. C C Marking: B A C E H I J K D F GL Style: Pin 1.Base 2.Collector 3.Emitter 3-Lead TO-252 Plastic Surface Mount Package CYStek Package Code: J3 D2195