BTD2114N3 CYSTEKEC | Alldatasheet

Document overview

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Technical content

Features

  • High Emitter-Base voltage, VEBO=12V(min).
  • High DC current gain, hFE=1200(min.) @VCE=3V , IC=10mA.
  • Low VCESAT, VCESAT=0.16V typ. @ IC=500mA, IB=20mA.
  • Pb-free and halogen-free package. Symbol Outline Absolute Maximum Ratings (Ta=25°C) BTD2114N3 SOT-23 B：Base C：Collector E：Emitter Parameter Symbol Limit Unit Collector-Base V oltage VCBO 30 V Collector-Emitter V oltage VCEO 20 V Emitter-Base V oltage VEBO 12 V Collector Current (DC) IC 500 mA Collector Current (Pulse) ICP 1 A Base Current IB 50 mA Power Dissipation PD 225 mW Thermal Resistance, Junction to Ambient RθJA 556 °C/W Operating Junction and Storage Temperature Range Tj ; Tstg -55~+150 °C

CYStech Electronics Corp. Spec. No. : C857N3 Issued Date : 2012.01.02 Revised Date : Page No. : 2/8 BTD2114N3 CYStek Product Specification Characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Test Conditions BVCBO 30 - - V IC=100μA, IE=0 BVCEO 20 - - V IC=1mA, IB=0 BVEBO 12 - - V IE=10μA, IC=0 ICBO - - 100 nA VCB=30V , IE=0 IEBO - - 100 nA VEB=12V , IC=0 *VCE(sat) - 35 100 mV IC=100mA, IB=10mA *VCE(sat) - 0.16 0.3 V IC=500mA, IB=20mA *RCE(sat) - 0.32 0.6 Ω IC=500mA, IB=20mA *VBE(sat) - 0.79 1 V IC=100mA, IB=10mA *hFE1 1200 - 2700 - VCE=3V , IC=10mA *hFE2 900 - - - VCE=3V , IC=100mA fT - 300 - MHz VCE=10V , IC=50mA, f=100MHz Cob - 9 - pF VCB=10V , f=1MHz Ron - 0.8 - Ω IB=1mA, Vi=100mV(rms), f=1KHz *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%

Ordering Information

Device Package Shipping Marking BTD2114N3 SOT-23 (Pb-free and halogen-free package) 3000 pcs / Tape & Reel BBW

CYStech Electronics Corp. Spec. No. : C857N3 Issued Date : 2012.01.02 Revised Date : Page No. : 3/8 BTD2114N3 CYStek Product Specification Typical Characteristics Emitter Grounded Output Characteristics 0.5 1.5 2.5 00 .2 0 .4 Collector-to-Emitter Voltage---VCE(V) Collector Current---IC(mA) 0.6 0.4uA 0.6uA 0.8uA 1uA 2uA IB=0.2uA Emitter Grounded Output Characteristics 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 02468 1 Collector-to-Emitter Voltage---VCE(V) Collector Current---IC(A) 200uA 300uA 400uA 500uA 1mA IB=100uA Emitter Grounded Output Characteristics 0.2 0.4 0.6 0.8 1.2 1.4 02468 1 Collector-to-Emitter Voltage---VCE(V) Collector Current---IC(A) 0.2mA 0.4mA 0.6mA 2mA On Voltage vs Collector Current 100 1000 1 10 100 1000 Collector Current---IC(mA) On Voltage---(mV) VCE=3V -25℃ 25℃ 75℃ 100℃ 125℃ Current Gain vs Collector Current 100 1000 10000 1 10 100 1000 Collector Current---IC(mA) Current Gain---HFE VCE=5V VCE=3V VCE=1V Current Gain vs Collector Current 100 1000 10000 1 10 100 1000 Collector Current---IC(mA) Current Gain---HFE 125℃ 100℃ 75℃ 25℃ -25℃ VCE=3V

CYStech Electronics Corp. Spec. No. : C857N3 Issued Date : 2012.01.02 Revised Date : Page No. : 4/8 BTD2114N3 CYStek Product Specification Typical Characteristics(Cont.) Saturation Voltage vs Collector Current 100 1000 1 10 100 1000 Collector Current---IC(mA) Saturation Voltage---(mV) IC=100IB IC= 50IB IC= 25IB IC= 10IB VCESAT Saturation Voltage vs Collector Current 100 1000 1 10 100 1000 Collector Current---IC(mA) Saturation Voltage---(mV) VCESAT=25IB 125℃ 100℃ 75℃ 25℃ -16℃ Saturation Voltage vs Collector Current 100 1000 1 10 100 1000 Collector Current---IC(mA) Saturation Voltage---(mV) IC= 10IB IC= 25IB IC= 50IB IC=100IB VBESAT Saturation Voltage vs Collector Current 100 1000 1 10 100 1000 Collector Current---IC(mA) Saturation Voltage---(mV) VBESAT=10IB -25℃ 25℃ 75℃ 100℃ 125℃ Cutoff Frequency vs Collector Current 100 1000 1 10 100 Collector Current---IC(mA) Cutoff Frequency---fT(MHZ) fT@VCE=10V Capacitance vs Reverse-biased Voltage 100 0.1 1 10 100 Reverse-biased Voltage---VR(V) Capacitance---(pF) Cib Cob

CYStech Electronics Corp. Spec. No. : C857N3 Issued Date : 2012.01.02 Revised Date : Page No. : 5/8 BTD2114N3 CYStek Product Specification Typical Characteristics(Cont.) On resistance vs Input Voltage 0.1 100 0.01 0.1 1 10 Base Current --- IB(mA) On resistance --- Ron(Ω) Ta=25℃ f=1kHz RL=1KΩ

  • Ron measurement circuit

CYStech Electronics Corp. Spec. No. : C857N3 Issued Date : 2012.01.02 Revised Date : Page No. : 6/8 BTD2114N3 CYStek Product Specification Reel Dimension Carrier Tape Dimension

CYStech Electronics Corp. Spec. No. : C857N3 Issued Date : 2012.01.02 Revised Date : Page No. : 7/8 BTD2114N3 CYStek Product Specification Recommended wave soldering condition Soldering Time Product Peak Temperature Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3°C/second max. 3°C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) 183°C 60-150 seconds 217°C 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C 260 +0/-5 °C Time within 5°C of actual peak temperature(tp) 10-30 seconds 20-40 seconds Ramp down rate 6°C/second max. 6°C/second max. Time 25 °C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface.

CYStech Electronics Corp. Spec. No. : C857N3 Issued Date : 2012.01.02 Revised Date : Page No. : 8/8 BTD2114N3 CYStek Product Specification SOT-23 Dimension *:Typical Inches Millimeters H JKD A L GV C B S Style : Pin 1.Base 2.Emitter 3.Collector 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 Marking: Product Code Date Code: Year+Month Year: 3→2003, 4→2004 BBW H 0.0005 0.0040 0.013 0.10 Notes : 1.Controlling dimension : millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material :

  • Lead : Pure tin plated.
  • Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0. Important Notice:
  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
  • CYStek reserves the right to make changes to its products without notice.
  • CYSrek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.