BTD1858A3

BTD1858A3 CYSTEKEC | Alldatasheet

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Technical content

CYStech Electronics Corp. Spec. No. : C856A3 Issued Date : 2006.06.05 Revised Date : 2006.06.08 Page No. : 1/9 BTD1858A3 CYStek Product Specification Silicon NPN Epitaxial Planar Transistor BTD1858A3

Description

• High BVCEO
• High current capability
• Pb-free package Symbol Outline Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-Base V oltage V CBO 180 V Collector-Emitter V oltage V CEO 180 V Emitter-Base V oltage V EBO 5 V Collector Current (DC) I C 1.5 A Collector Current (Pulse) I CP 3 A Power Dissipation @TA=25℃ PD 750 mW Junction Temperature Tj 150 °C Storage Temperature Tstg -55~+150 °C BTD1858A3 TO-92 E C B B：Base C：Collector E：Emitter

CYStech Electronics Corp. Spec. No. : C856A3 Issued Date : 2006.06.05 Revised Date : 2006.06.08 Page No. : 2/9 BTD1858A3 CYStek Product Specification Characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Test Conditions BVCBO 180 - - V I C=50µA, IE=0 BVCEO 180 - - V I C=1mA, IB=0 BVEBO 5 - - V I E=50µA, IC=0 ICBO - - 1 µA V CB=160V , IE=0 IEBO - - 1 µA V EB=4V , IC=0 *VCE(sat) - 0.15 0.3 V I C=1A, IB=100mA *VCE(sat) - - 0.4 V I C=1A, IB=50mA *VBE(on) - - 0.8 V V CE=5V , IC=5mA hFE1 180 - 560 - V CE=5V , IC=200mA hFE2 30 - - - V CE=5V , IC=500mA fT - 140 - MHz V CE=5V , IC=150mA Cob - 27 - pF V CB=10V , IE=0, f=1MHz *Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2% Classification of hFE 1 Rank Q R Range 180~390 270~560

Ordering Information

Device Package Shipping Marking BTD1858A3 TO-92 (Pb-free) 2000 pcs / Tape & Box D1858

CYStech Electronics Corp. Spec. No. : C856A3 Issued Date : 2006.06.05 Revised Date : 2006.06.08 Page No. : 3/9 BTD1858A3 CYStek Product Specification Characteristic Curves Output Characteristics 0.05 0.1 0.15 0.2 0123456 Collector-to-Emitter Voltage---VCE(V) Collector Current---IC(A) IB=0 IB=100uA IB=200uA IB=300uA IB=400uA IB=500uA Output Characteristics 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0123456 Collector-to-Emitter Voltage---VCE(V) Collector Current---IC(A) IB=0 IB=0.5mA IB=1mA IB=1.5m IB=2mA IB=2.5mA Output Characteristics 0.2 0.4 0.6 0.8 1.2 0246 Collector-to-Emitter Voltage---VCE(V) Collector Current---IC(A) IB=0 IB=2mA IB=4mA IB=6mA IB=8m IB=10mA Output Characteristics 0.2 0.4 0.6 0.8 1.2 1.4 1.6 0123456 Collector-to-Emitter Voltage---VCE(V) Collector Current---IC(A) IB=0 IB=5mA IB=10mA IB=15mA IB=20mA IB=25mA Current Gain vs Collector Current 100 1000 1 10 100 1000 10000 Collector Current---IC(mA) Current Gain---HFE VCE=1V VCE=2V VCE=5V Saturation Voltage vs Collector Current 100 1000 10000 100000 1 10 100 1000 10000 Collector Current---IC(mA) Saturation Voltage---(mV) IC=10IB IC=20I IC=50IB VCE(SAT) IC=30IB

CYStech Electronics Corp. Spec. No. : C856A3 Issued Date : 2006.06.05 Revised Date : 2006.06.08 Page No. : 4/9 BTD1858A3 CYStek Product Specification Characteristic Curves(Cont.) Saturation Voltage vs Collector Current 100 1000 10000 1 10 100 1000 10000 Collector Current---IC(mA) Saturation Voltage---(mV) VBE(SAT)@IC=10IB On Voltage vs Collector Current 100 1000 1 10 100 1000 10000 Collector Current---IC(mA) On Voltage---(mV) VBE(on)@VCE=5 Power Derating Curve 100 200 300 400 500 600 700 800 0 50 100 150 200 Ambient Temperature---TA(℃) Power Dissipation---PD(mW) Output Capacitance vs Reverse Biased Voltage 100 0.1 1 10 100 Reverse Biased Voltage---VCB(V) Output capacitance---Cob(pF) Safe Operating Area 0.001 0.01 0.1 1.0 10.0 100.0 1000.0 Forward Voltage---VCE(V) Forward Current---IC(A) PT=1s PT=100ms PT=10ms PT=1ms

CYStech Electronics Corp. Spec. No. : C856A3 Issued Date : 2006.06.05 Revised Date : 2006.06.08 Page No. : 5/9 BTD1858A3 CYStek Product Specification Product Designation

CYStech Electronics Corp. Spec. No. : C856A3 Issued Date : 2006.06.05 Revised Date : 2006.06.08 Page No. : 6/9 BTD1858A3 CYStek Product Specification Recommended IR reflow profile Average ramp-up rate(25 to 150℃) 1~4 ℃/second Preheat temperature 150~180℃ 60~90 seconds Temperature maintained above 220℃ 30 seconds min. Time within 5℃ of actual peak temperature 3~5 seconds Peak temperature range 255+0/-5℃ Ramp-down rate 2~10 ℃/second Time 25℃ to peak temperature 6 minutes max.

CYStech Electronics Corp. Spec. No. : C856A3 Issued Date : 2006.06.05 Revised Date : 2006.06.08 Page No. : 7/9 BTD1858A3 CYStek Product Specification Recommended temperature profile for wave soldering Recommendation: 1. Preheat temperature at solder side must be between 100 and 130 ℃ for 80 to 100 seconds. 2. Temperature ramp-up rate : 1~2 ℃/s 3. The temperature gradient between preheat and wave soldering must be smaller than +100 4. Terminations must go through the wave simultaneously. 5. Travel through the wave from 255 to 260℃ for 2.5 to 3.5 seconds 6. Temperature ramp-down rate : 2~3 ℃/s

CYStech Electronics Corp. Spec. No. : C856A3 Issued Date : 2006.06.05 Revised Date : 2006.06.08 Page No. : 8/9 BTD1858A3 CYStek Product Specification TO-92 Taping Outline Millimeters DIM Item Min. Max. A Component body height 4.33 4.83 D Tape Feed Diameter 3.80 4.20 D1 Lead Diameter 0.36 0.53 D2 Component Body Diameter 4.33 4.83 E 1.5 2.0 F1,F2 Component Lead Pitch 2.40 2.90 F1,F2 F1-F2 - ±0.3 H Height Of Seating Plane 15.50 16.50 H1 Feed Hole Location 8.50 9.50 H2 Front To Rear Deflection - 1 H2A Deflection Left Or Right - 1 H3 Component Height - 27 H4 Feed Hole To Bottom Of Component - 21 L Lead Length After Component Removal - 11 L1 Lead Wire Enclosure 2.50 - P Feed Hole Pitch 12.50 12.90 P1 Center Of Seating Plane Location 5.95 6.75 P2 4 Feed Hole Pitch 50.30 51.30 T Over All Tape Thickness - 0.55 T1 Total Taped Package Thickness - 1.42 T2 Carrier Tape Thickness 0.36 0.68 W Tape Width 17.50 19.00 W1 Adhesive Tape Width 5.00 7.00 - 20 pcs Pitch 253 255

CYStech Electronics Corp. Spec. No. : C856A3 Issued Date : 2006.06.05 Revised Date : 2006.06.08 Page No. : 9/9 BTD1858A3 CYStek Product Specification TO-92 Dimension *: Typical D 0.0142 0.0220 0.36 0.56 α 1 - *5° - *5° F 0.1323 0.1480 3.36 3.76 α 3 - *2° - *2° Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:

• Lead: 42 Alloy ; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. D1858 HFE Rank A D B C I α 1 E F α 2 α 3 GH Marking: Style: Pin 1.Emitter 2.Collector 3.Base 3-Lead TO-92 Plastic Package CYStek Package Code: A3 Product Name Date Code: Year+Month Year: 4→2004, 5→2005