BTD1782N3 CYSTEKEC | Alldatasheet

Document overview

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  • PDF pages: 6

Technical content

Features

  • Low VCE(SAT), VCE(SAT)= 0.15V(typ) @IC=500mA/IB=50mA
  • High breakdown voltage, VCEO=80V (min.)
  • Complements to BTB1198N3
  • Pb-free package Symbol Outline BTD1782N3 SOT-23 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-Base V oltage VCBO 80 V Collector-Emitter V oltage VCEO 80 V Emitter-Base V oltage VEBO 5 V Collector Current (DC) IC 0.5 A Power Dissipation PD 200 mW Thermal Resistance, Junction to Ambient RθJA 625 °C/W Junction Temperature Tj 150 °C Storage Temperature Tstg -55~+150 °C Note : Pulse test, PW ≤ 10ms, Duty ≤ 50%.

CYStech Electronics Corp. Spec. No. : C304N3 Issued Date : 2006.06.12 Revised Date : 2007.12.11 Page No. : 2/6 BTD1782N3 CYStek Product Specification Characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Test Conditions BVCBO 80 - - V IC=50μA BVCEO 80 - - V IC=2mA BVEBO 5 - - V IE=50μA ICBO - - 0.5 μA VCB=50V , IE=0 IEBO - - 0.5 μA VEB=4V , IC=0 *VCE(SAT) - 0.15 0.5 V IC=500mA, IB=20mA *hFE 120 - 390 - VCE=3V , IC=100mA fT - 180 - MHz VCE=10V , IC=50mA, f=100MHz Cob - 7.5 - pF VCB=10V , IE=0A, f=1MHz *Pulse Test: Pulse Width ≤380μs, Duty Cycle≤2% Classification Of hFE Rank Q R Range 120~270 180~390

Ordering Information

Device Package Shipping Marking BTD1782N3 SOT-23 (Pb-free) 3000 pcs / Tape & Reel AJ

CYStech Electronics Corp. Spec. No. : C304N3 Issued Date : 2006.06.12 Revised Date : 2007.12.11 Page No. : 3/6 BTD1782N3 CYStek Product Specification Characteristic Curves Current Gain vs Collector Current 100 1000 1 10 100 1000 Collector Current---IC(mA) Current Gain---HFE VCE=3V 125度 25度 75度 Current Gain vs Collector Current 100 1000 1 10 100 1000 Collector Current---IC(mA) Current Gain---HFE VCE=2V 125度 25度 75度 Saturation Voltage vs Collector Current 100 1000 1 10 100 1000 Collector Current---IC(mA) Saturation Voltage---(mV) VCESAT IC=10IB 125度 25度 75度 Saturation Voltage vs Collector Current 100 1000 10000 1 10 100 1000 Collector Current---IC(mA) Saturation Voltage---(mV) VCESAT IC=25IB 125度 25度 75度 Saturation Voltage vs Collector Current 100 1000 10000 1 10 100 1000 Collector Current---IC(mA) Saturation Voltage---(mV) VBESAT IC=10IB 125度 25度 75度 On Voltage vs Collector Current 100 1000 1 10 100 1000 Collector Current---IC(mA) On Voltage---(mV) VCE=2V 125度25度 75度

CYStech Electronics Corp. Spec. No. : C304N3 Issued Date : 2006.06.12 Revised Date : 2007.12.11 Page No. : 4/6 BTD1782N3 CYStek Product Specification Characteristic Curves(Cont.) Power Derating Curve 100 150 200 250 0 50 100 150 200 Ambient Temperature---TA(℃) Power Dissipation---PD(mW)

CYStech Electronics Corp. Spec. No. : C304N3 Issued Date : 2006.06.12 Revised Date : 2007.12.11 Page No. : 5/6 BTD1782N3 CYStek Product Specification Reel Dimension Carrier Tape Dimension

CYStech Electronics Corp. Spec. No. : C304N3 Issued Date : 2006.06.12 Revised Date : 2007.12.11 Page No. : 6/6 BTD1782N3 CYStek Product Specification SOT-23 Dimension *: Typical Inches Millimeters Inches Millimeters H JKD A L GV C B S Style: Pin 1.Base 2.Emitter 3.Collector Marking: AJ 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 H 0.0005 0.0040 0.013 0.10 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:

  • Lead: 42 Alloy ; solder plating
  • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice:
  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
  • CYStek reserves the right to make changes to its products without notice.
  • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.