BTD1304A3 CYSTEKEC | Alldatasheet

Document overview

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Technical content

Features

  • High Emitter-Base voltage, VEBO=12V(min).
  • High reverse hFE, reverse hFE=20(min.) @VCE=2V , IC=4mA.
  • Low On-resistance, Ron=0.6Ω(max)@IB=1mA.
  • Pb-free and halogen-free package. Symbol Outline BTD1304A3 TO-92 Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limit Unit Collector-Base V oltage VCBO 50 V Collector-Emitter V oltage VCEO 20 V Emitter-Base V oltage VEBO 12 V Collector Current IC 500 mA Base Current IB 50 mA Power Dissipation PD 625 mW Thermal Resistance, Junction to Ambient RθJA 200 °C/W Operating Junction Temperature Range Tj -55~+150 °C Storage Temperature Range Tstg -55~+150 °C RCE(SAT) 0.3Ω(typ) B：Base E C B C：Collector E：Emitter

CYStech Electronics Corp. Spec. No. : C857A3 Issued Date : 2013.03.26 Revised Date : Page No. : 2/8 BTD1304A3 CYStek Product Specification Characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Test Conditions BVCBO 50 - - V IC=100μA, IE=0 BVCEO 20 - - V IC=1mA, IB=0 BVEBO 12 - - V IE=10μA, IC=0 ICBO - - 100 nA VCB=40V , IE=0 IEBO - - 100 nA VEB=12V , IC=0 *VCE(sat) - 34 100 mV IC=100mA, IB=10mA *VCE(sat) - 0.15 0.3 V IC=500mA, IB=20mA *RCE(sat) - 0.3 0.6 Ω IC=500mA, IB=20mA *VBE(sat) - 0.67 1 V IC=100mA, IB=10mA *hFE1(FOR) 400 - 800 - VCE=2V , IC=4mA *hFE2(FOR) 400 - - - VCE=3V , IC=100mA *hFE 3(REV) 20 - - - VCE=2V , IC=4mA fT - 250 - MHz VCE=10V , IC=50mA, f=100MHz Cob - 10 - pF VCB=10V , f=1MHz Ron - - 0.6 Ω Vin=0.3V , IB=1mA, f=1KHz *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%

Ordering Information

BTD1304A3-0-BK-G 1000 pcs/ bag, 10 bags/box, 10boxes/carton BTD1304A3-0-TB-G TO-92 (Pb-free and halogen-free package) 2000 pcs / Tape & Box

CYStech Electronics Corp. Spec. No. : C857A3 Issued Date : 2013.03.26 Revised Date : Page No. : 3/8 BTD1304A3 CYStek Product Specification Typical Characteristics Emitter Grounded Output Characteristics 0.1 0.2 0.3 0.4 0.5 0.6 0123456 Collector-to-Emitter Voltage---VCE(V) Collector Current---IC(A) 200uA 300uA 400uA 500uA 1mA IB=100uA Emitter Grounded Output Characteristics 0.2 0.4 0.6 0.8 1.2 1.4 0123456 Collector-to-Emitter Voltage---VCE(V) Collector Current---IC(A) IB= 500uA 1mA 1.5mA 2mA 5mA Emitter Grounded Output Characteristics 0.5 1.5 0123456 Collector-to-Emitter Voltage---VCE(V) Collector Current---IC(A) IB=2mA 20mA 4mA 6mA Emitter Grounded Output Characteristics 0.5 1.5 2.5 0123456 Collector-to-Emitter Voltage---VCE(V) Collector Current---IC(A) IB=5mA 10mA 20mA 50mA Current Gain vs Collector Current 100 1000 10 100 1000 Collector Current---IC(mA) Current Gain---HFE 75℃ 25℃ 125℃ VCE=1V -25℃ Current Gain vs Collector Current 100 1000 10 100 1000 Collector Current---IC(mA) Current Gain---HFE 75℃ 25℃ 125℃ VCE=2V -25℃

CYStech Electronics Corp. Spec. No. : C857A3 Issued Date : 2013.03.26 Revised Date : Page No. : 4/8 BTD1304A3 CYStek Product Specification Typical Characteristics(Cont.) Current Gain vs Collector Current 100 1000 10 100 1000 Collector Current---IC(mA) Current Gain---HFE 75℃ 25℃ 125℃ VCE=3V -25℃ Current Gain vs Collector Current 100 1000 10 100 1000 Collector Current---IC(mA) Current Gain---HFE 75℃ -25℃ 125℃ VCE=10V 25℃ Saturation Voltage vs Collector Current 100 1000 1 10 100 1000 Collector Current---IC(mA) Saturation Voltage---(mV) VCESAT=10IB 125°C 75°C 25°C -25℃ Saturation Voltage vs Collector Current 100 1000 1 10 100 1000 Collector Current---IC(mA) Saturation Voltage---(mV) VCESAT=20IB 125°C 75°C 25°C -25℃ Saturation Voltage vs Collector Current 100 1000 1 10 100 1000 Collector Current---IC(mA) Saturation Voltage---(mV) VCESAT=25IB 125°C 75°C 25°C -25℃ Saturation Voltage vs Collector Current 100 1000 10000 1 10 100 1000 Collector Current---IC(mA) Saturation Voltage---(mV) 125 VBESAT=10IB 75℃ 25℃ -25℃

CYStech Electronics Corp. Spec. No. : C857A3 Issued Date : 2013.03.26 Revised Date : Page No. : 5/8 BTD1304A3 CYStek Product Specification Typical Characteristics(Cont.) Saturation Voltage vs Collector Current 100 1000 10000 1 10 100 1000 Collector Current---IC(mA) Saturation Voltage---(mV) 125℃ VBESAT=20IB 75℃ -25℃ 25℃ On Voltage vs Collector Current 100 1000 10000 1 10 100 1000 Collector Current---IC(mA) On Voltage---(mV) 125℃ VCE=2V 75℃ 25℃ -25℃ Capacitance vs Reverse-biased Voltage 100 0.1 1 10 100 Reverse-biased Voltage---VR(V) Capacitance---(pF) Cib Cob

CYStech Electronics Corp. Spec. No. : C857A3 Issued Date : 2013.03.26 Revised Date : Page No. : 6/8 BTD1304A3 CYStek Product Specification TO-92 Taping Outline Millimeters DIM Item Min. Max. A Component body height 4.33 4.83 D Tape Feed Diameter 3.80 4.20 H2AH2AH2H2 D2 A H W L P F1F2 D1 D T D1 Lead Diameter 0.36 0.53 D2 Component Body Diameter 4.33 4.83 F1,F2 Component Lead Pitch 2.40 2.90 F1,F2 F1-F2 - ±0.3 H Height Of Seating Plane 15.50 16.50 H1 Feed Hole Location 8.50 9.50 H2 Front To Rear Deflection - 1 H2A Deflection Left Or Right - 1 H3 Component Height - 27 H4 Feed Hole To Bottom Of Component - 21 L Lead Length After Component Removal - 11 L1 Lead Wire Enclosure 2.50 - P Feed Hole Pitch 12.50 12.90 P1 Center Of Seating Plane Location 5.95 6.75 P2 4 Feed Hole Pitch 50.30 51.30 T Over All Tape Thickness - 0.55 T1 Total Taped Package Thickness - 1.42 T2 Carrier Tape Thickness 0.36 0.68 W Tape Width 17.50 19.00 W1 Adhesive Tape Width 5.00 7.00 - 20 pcs Pitch 253 255

CYStech Electronics Corp. Spec. No. : C857A3 Issued Date : 2013.03.26 Revised Date : Page No. : 7/8 BTD1304A3 CYStek Product Specification Recommended wave soldering condition Soldering Time Product Peak Temperature Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3°C/second max. 3°C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds Time maintained above: −Temperature (TL) 217°C − Time (tL) 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C 260 +0/-5 °C Time within 5°C of actual peak 10-30 seconds 20-40 seconds temperature(tp) Ramp down rate 6°C/second max. 6°C/second max. Time 25 °C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface.

CYStech Electronics Corp. Spec. No. : C857A3 Issued Date : 2013.03.26 Revised Date : Page No. : 8/8 BTD1304A3 CYStek Product Specification TO-92 Dimension *: Typical Inches D1304 □□□□ Marking: A D B C I α1 E F GH Style: Pin 1.Emitter 2.Collector 3.Base 3-Lead TO-92 Plastic Package CYStek Package Code: A3 Device Name Date Code D 0.0142 0.0220 0.36 0.56 α1 - *5° - *5° F 0.1323 0.1480 3.36 3.76 α3 - *2° - *2° Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:

  • Lead: Pure tin plated.
  • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice:
  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
  • CYStek reserves the right to make changes to its products without notice.
  • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.