BTC4061N3 CYSTEKEC | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 5
Technical content
CYStech Electronics Corp. Spec. No. : C209N3 Issued Date : 2002.05.11 Revised Date : 2005.06.01 Page No. : 1/5 BTC4061N3 CYStek Product Specification General Purpose NPN Epitaxial Planar Transistor BTC4061N3
Description
- High breakdown voltage.
- Low collector output capacitance.
- Ideal for chroma circuit.
- Pb-free package. Symbol Outline Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-Base V oltage V CBO 300 V Collector-Emitter V oltage V CEO 300 V Emitter-Base V oltage V EBO 6 V Collector Current I C 500 mA Power Dissipation Pd 225 mW Junction Temperature Tj 150 °C Storage Temperature Tstg -55~+150 °C SOT-23 BTC4061N3 B：Base C：Collector E：Emitter
CYStech Electronics Corp. Spec. No. : C209N3 Issued Date : 2002.05.11 Revised Date : 2005.06.01 Page No. : 2/5 BTC4061N3 CYStek Product Specification Characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Test Conditions BVCBO 300 - - V I C=100µA BVCEO 300 - - V I C=1mA BVEBO 6 - - V I E=100µA ICBO - - 100 nA V CB=200V IEBO - - 100 nA V EB=6V *VCE(sat) - 0.15 0.5 V I C=20mA, IB=2mA *VBE(sat) - - 0.9 V I C=20mA, IB=2mA *hFE1 25 - - - V CE=10V , IC=1mA *hFE2 52 - 270 - V CE=10V , IC=10mA *hFE3 40 - - - V CE=10V , IC=30mA fT 50 - - MHz V CE=20V , IC=10mA, f=100MHz Cob - - 3 pF V CB=20V , f=1MHz *Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2% Classification Of hFE 2 Rank K P Q Range 52~120 82~180 120~270
Ordering Information
Device Package Shipping Marking BTA4061N3 SOT-23 (Pb-free) 3000 pcs / Tape & Reel 1D
CYStech Electronics Corp. Spec. No. : C209N3 Issued Date : 2002.05.11 Revised Date : 2005.06.01 Page No. : 3/5 BTC4061N3 CYStek Product Specification Characteristic Curves Current Gain vs Collector Current 100 1000 1 10 100 Collector Current ---IC(mA) Current Gain---HFE HFE VCE=5V VCE=10V Saturation Voltage vs Collector Current 100 1000 1 10 100 Collector Current--- IC(mA) Saturation Voltage---(mV) VCE(SAT) IC=10IB IC=20IB Saturation Voltage vs Collector Current 100 1000 1 10 100 Collector Current ---IC(mA) Saturation Voltage---(mV) VBE(SAT)@IC=10IB Cutoff Frequency vs Collector Current 0.1 1 10 100 Collector Current---IC(mA) Cutoff Frequency---FT(GHZ) FT@VCE=30V Power Derating Curve 100 150 200 250 0 50 100 150 200 Ambient Temperature --- Ta(℃ ) Power Dissipation---PD(mW)
CYStech Electronics Corp. Spec. No. : C209N3 Issued Date : 2002.05.11 Revised Date : 2005.06.01 Page No. : 4/5 BTC4061N3 CYStek Product Specification Reel Dimension Carrier Tape Dimension
CYStech Electronics Corp. Spec. No. : C209N3 Issued Date : 2002.05.11 Revised Date : 2005.06.01 Page No. : 5/5 BTC4061N3 CYStek Product Specification SOT-23 Dimension *: Typical H 0.0005 0.0040 0.013 0.10 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:
- Lead: 42 Alloy ; solder plating
- Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice:
- All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
- CYStek reserves the right to make changes to its products without notice.
- CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
- CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. H JKD A L GV C B S Style: Pin 1.Base 2.Emitter 3.Collector Marking: TE 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3