BTC2411S3 CYSTEKEC | Alldatasheet
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Technical content
CYStech Electronics Corp. Spec. No. : C203S3-R Issued Date : 2003.11.18 Revised Date : Page No. : 1/4 BTC2411S3 CYStek Product Specification General Purpose NPN Epitaxial Planar Transistor BTC2411S3
Description
- The BTC2411S3 is designed for general purpose amplifier applications. It is housed in the SOT-323/SC-70 package which is designed for low power surface mount applications.
- Low VCE(sat)
- Low leakage current
- High cutoff frequency
- Complementary to BTA1036S3 Symbol Outline Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-Base V oltage V CBO 75 V Collector-Emitter V oltage V CEO 40 V Emitter-Base V oltage V EBO 6 V Collector Current I C 600 mA Power Dissipation @Ta=25℃ Derate above 25℃ Pd 150 (Note 1) mW Junction Temperature Tj 150 °C Storage Temperature Tstg -55~+150 °C Note 1: when mounted on a FR-5 board with area measuring 1.0× 0.75× 0.062 in. SOT-323 BTC2411S3 B：Base C：Collector E：Emitter
CYStech Electronics Corp. Spec. No. : C203S3-R Issued Date : 2003.11.18 Revised Date : Page No. : 2/4 BTC2411S3 CYStek Product Specification Characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Test Conditions BVCBO 75 - - V I C=10µA BVCEO 40 - - V I C=1mA BVEBO 6 - - V I E=10µA ICBO - - 10 nA V CB=60V ICEX - - 10 nA V CE=60V ,VEB(off)=3V IEBO - - 100 nA V EB=3V *VCE(sat)1 - - 0.3 V I C=150mA, IB=15mA *VCE(sat)2 - - 1.0 V I C=500mA, IB=50mA *VBE(sat)1 - - 1.2 V I C=150mA, IB=15mA *VBE(sat)2 - - 2.0 V I C=500mA, IB=50mA hFE1 35 - - - V CE=10V , IC=0.1mA hFE2 50 - - - V CE=10V , IC=1mA hFE3 75 - - - V CE=10V , IC=10mA *hFE4 100 - 300 - V CE=10V , IC=150mA *hFE5 40 - - - V CE=10V , IC=500mA fT 300 - - MHz V CE=20V , IC=20mA, f=100MHz Cob - - 8 pF V CB=10V , IE=0A,f=1MHz *Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2%
CYStech Electronics Corp. Spec. No. : C203S3-R Issued Date : 2003.11.18 Revised Date : Page No. : 3/4 BTC2411S3 CYStek Product Specification Characteristic Curves Current Gain vs Collector Current 100 1000 0.1 1 10 100 1000 Collector Current---IC(mA) Current Gain---HFE VCE=1V VCE=10V Saturation Voltage vs Collector Current 100 1000 0.1 1 10 100 1000 Collector Current---IC(mA) Saturation Voltage-(mV) VCE(SAT)@IC=10IB Saturation Voltage vs Collector Current 100 1000 1 10 100 1000 Collector Current---IC(mA) Saturation Voltage-(mV) VCE(SAT)@IC=38IB Saturation Voltage vs Collector Current 100 1000 10000 0.1 1 10 100 1000 Collector Current---IC(mA) Saturation Voltage-(mV) VBE(SAT)@IC=10IB Cutoff Frequency vs Collector Current 100 1000 1 10 100 Collector Current---IC(mA) Cutoff Frequency(MHz) VCE=20V Power Derating Curve 100 120 140 160 0 50 100 150 200 Ambient Temperature --- Ta( ℃) Power Dissipation---PD(mW)
CYStech Electronics Corp. Spec. No. : C203S3-R Issued Date : 2003.11.18 Revised Date : Page No. : 4/4 BTC2411S3 CYStek Product Specification SOT-323 Dimension *: Typical Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:
- Lead: 42 Alloy ; solder plating
- Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice:
- All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
- CYStek reserves the right to make changes to its products without notice.
- CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
- CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. He E A Q Lp e bp D W B v A Z detail Z A C θ 01 2 scale mm Style: Pin 1.Base 2.Emitter 3.Collector 3-Lead SOT-323 Plastic Surface Mounted Package CYStek Package Code: S3 Marking: TE