BTC2411L3 CYSTEKEC | Alldatasheet

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CYStech Electronics Corp. Spec. No. : C203L3 Issued Date : 2005.02.22 Revised Date : Page No. : 1/4 BTC2411L3 CYStek Product Specification General Purpose NPN Epitaxial Planar Transistor BTC2411L3

Description

  • The BTC2411L3 is designed for using in driver stage of AF amplifier and general purpose switching application.
  • High IC(Max), IC(Max) = 0.6A.
  • Low VCE(sat) , Typ. VCE(sat) = 0.3V at IC/IB = 500mA/50mA. Optimal for low Voltage operation.
  • Complementary to BTA1036L3. Symbol Outline Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-Base V oltage V CBO 75 V Collector-Emitter V oltage V CEO 40 V Emitter-Base V oltage V EBO 6 V Collector Current I C 0.6 A Power Dissipation (TC=25°C) PD 5 W Junction Temperature Tj 150 °C Storage Temperature Tstg -55~+150 °C BTC2411L3 SOT-223 B：Base C：Collector E：Emitter C E B C

CYStech Electronics Corp. Spec. No. : C203L3 Issued Date : 2005.02.22 Revised Date : Page No. : 2/4 BTC2411L3 CYStek Product Specification Characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Test Conditions BVCBO 75 - - V I C=10µA BVCEO 40 - - V I C=10mA BVEBO 6 - - V I E=10µA ICBO - - 10 nA V CB=60V ICEX - - 10 nA V CE=60V , VBE=-3V IEBO - - 10 nA V EB=3V *VCE(sat)1 - - 0.5 V I C=380mA, IB=10mA *VCE(sat) 2 - - 0.4 V I C=150mA, IB=15mA *VCE(sat)3 - - 0.75 V I C=500mA, IB=50mA *VBE(sat)1 0.75 - 0.95 V I C=150mA, IB=15mA *VBE(sat)2 - - 1.2 V I C=500mA, IB=50mA *hFE1 35 - - V CE=1V , IC=0.1mA *hFE2 50 - - V CE=1V , IC=1mA *hFE3 75 - - V CE=1V , IC=10mA *hFE4 82 - 390 V CE=1V , IC=150mA *hFE5 40 - - V CE=2V , IC=500mA fT 300 - - MHz V CE=5V , IC=20mA, f=100MHz Cob - 6 - pF V CB=5V , f=1MHz *Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2% Classification Of hFE 4 Rank P Q R Range 82~180 120~270 180~390

CYStech Electronics Corp. Spec. No. : C203L3 Issued Date : 2005.02.22 Revised Date : Page No. : 3/4 BTC2411L3 CYStek Product Specification Characteristic Curves Current Gain vs Collector Current 100 1000 0.1 1 10 100 1000 Collector Current ---I C(mA) Current Gain---HFE HFE VCE=1V VCE=2V Saturation Voltage vs Collector Current 100 1000 0.1 1 10 100 1000 Collector Current ---I C(mA) Saturation Voltage---(mV) VCE(SAT) IC=10IB IC=20IB Saturation Voltage vs Collector Current 100 1000 10000 0.1 1 10 100 1000 Collector Current--- I C(mA) Saturation Voltage---(mV) VBE(SAT)@IC=10IB Cutoff Frequency vs Collector Current 0.1 1 10 100 Collector Current---IC(mA) Cutoff Frequency---FT(GHZ) FT@VCE=5V Power Derating Curve 0 50 100 150 200 Case Temperature --- T C(℃ ) Power Dissipation---PD(W)

CYStech Electronics Corp. Spec. No. : C203L3 Issued Date : 2005.02.22 Revised Date : Page No. : 4/4 BTC2411L3 CYStek Product Specification SOT-223 Dimension *: Typical D 0.0236 0.0315 0.60 0.80 a1 *13 o - *13 o - E *0.0906 - *2.30 - a2 0 o 10 o 0 o 10 o F 0.2480 0.2638 6.30 6.70 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:

  • Lead: 42 Alloy; solder plating
  • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice:
  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
  • CYStek reserves the right to make changes to its products without notice.
  • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. 321 F B A C D E G H a1 I Style: Pin 1.Base 2.Collector 3.Emitter Marking: 3-Lead SOT-223 Plastic Surface Mounted Package CYStek Package Code: L3