BTC2328AK3 CYSTEKEC | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 8

Technical content

Features

  • Low Saturation Voltage, VCE(sat)=0.5V(max)@IC=1.5A, IB=30mA
  • Complementary to BTA928AK3
  • Pb-free lead plating and halogen-free package Symbol Outline

Ordering Information

(Pb-free lead plating and halogen-free package) 2000 pcs / tape & box BTC2328AK3-0-BM-G TO-92L (Pb-free lead plating and halogen-free package) 500 pcs / bag, 10 bags/box, 10 boxes/carton BTC2328AK3 TO-92L B：Base C：Collector E：Emitter BVCEO 30V IC 2A RCESAT(MAX) 333mΩ Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, TB : 2000 pcs / tape & box ; BM : 500 pcs/bag, 10 bags/box, 10 boxes/carton Product rank, zero for no rank products Product name

CYStech Electronics Corp. Spec. No. : C858K3 Issued Date : 2014.11.24 Revised Date : Page No. : 2/8 BTC2328AK3 CYStek Product Specification Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-Base V oltage VCBO 80 Collector-Emitter V oltage VCEO 30 Emitter-Base V oltage VEBO 6 V Collector Current(DC) IC 2 Collector Current(Pulsed) (Note 1) ICP 5 Base Current IB 0.5 A Power Dissipation PD 1 W Thermal Resistance, Junction to Ambient RθJA 125 °C/W Operating Junction Temperature and Storage Range Tj ; Tstg -55~+150 °C Note 1: Single pulse, Pw≤300μs, Duty Cycle≤2%. Characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Test Conditions BVCBO 80 - - V IC=100μA BVCEO 30 - - V IC=10mA BVEBO 6 - - V IE=100μA ICBO - - 100 nA VCB=80V IEBO - - 100 nA VEB=6V VCE(sat) * - - 500 mV IC=1.5A, IB=30mA RCE(sat) * - - 333 mΩ IC=1.5A, IB=30mA VBE(sat) * - - 1.2 V IC=1.5A, IB=30mA VBE(on) * - - 1 V VCE=2V , IC=500mA hFE * 160 - 320 - VCE=2V , IC=500mA fT 120 270 - MHz VCE=5V , IC=500mA Cob - 16.5 30 pF VCB=10V , IE=0A,f=1MHz *Pulse Test: Pulse Width ≤300μs, Duty Cycle≤2%

CYStech Electronics Corp. Spec. No. : C858K3 Issued Date : 2014.11.24 Revised Date : Page No. : 3/8 BTC2328AK3 CYStek Product Specification Typical Characteristics Emitter Grounded Output Characteristics 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0123456 Collector-to-Emitter Voltage---VCE(V) Collector Current---IC(A) 200uA 300uA 400uA 500uA 1mA IB=100uA Emitter Grounded Output Characteristics 0.2 0.4 0.6 0.8 1.2 1.4 1.6 1.8 0123456 Collector-to-Emitter Voltage---VCE(V) Collector Current---IC(A) 1mA 1.5mA 2mA 2.5mA 5mA IB=500uA Emitter Grounded Output Characteristics 0123456 Collector-to-Emitter Voltage---VCE(V) Collector Current---IC(A) IB=2mA 4mA 6mA 10mA 20mA Emitter Grounded Output Characteristics 0.5 1.5 2.5 3.5 4.5 0123456 Collector-to-Emitter Voltage---VCE(V) Collector Current---IC(A) IB=5mA 10mA 20mA 50mA Current Gain vs Collector Current 100 1000 10 100 1000 10000 Collector Current---IC(mA) Current Gain---HFE 75℃ 25℃ 125℃ VCE=1V Current Gain vs Collector Current 100 1000 10 100 1000 10000 Collector Current---IC(mA) Current Gain---HFE 75℃ 25℃ 125℃ VCE=2V

CYStech Electronics Corp. Spec. No. : C858K3 Issued Date : 2014.11.24 Revised Date : Page No. : 4/8 BTC2328AK3 CYStek Product Specification Typical Characteristics(Cont.) Current Gain vs Collector Current 100 1000 10 100 1000 10000 Collector Current---IC(mA) Current Gain---HFE 75℃ 25℃ 125℃ VCE=5V Saturation Voltage vs Collector Current 100 1000 1 10 100 1000 10000 Collector Current---IC(mA) Saturation Voltage---(mV) VCESAT=10IB 25℃ 75°C 125°C Saturation Voltage vs Collector Current 100 1000 1 10 100 1000 10000 Collector Current---IC(mA) Saturation Voltage---(mV) VCESAT=50IB 25℃ 75°C 125°C Saturation Voltage vs Collector Current 100 1000 10000 1 10 100 1000 10000 Collector Current---IC(mA) Saturation Voltage---(mV) VCESAT=100IB 25℃ 75°C 125°C Saturation Voltage vs Collector Current 100 1000 10000 1 10 100 1000 10000 Collector Current---IC(mA) Saturation Voltage---(mV) 125℃ VBESAT=50IB 75℃ 25℃ Saturation Voltage vs Collector Current 100 1000 10000 1 10 100 1000 10000 Collector Current---IC(mA) Saturation Voltage---(mV) 125℃ VBESAT=100IB 75℃ 25℃

CYStech Electronics Corp. Spec. No. : C858K3 Issued Date : 2014.11.24 Revised Date : Page No. : 5/8 BTC2328AK3 CYStek Product Specification Typical Characteristics(Cont.) On Voltage vs Collector Current 100 1000 10000 1 10 100 1000 10000 Collector Current---IC(mA) On Voltage---(mV) 125℃ VCE=2V 75℃ 25℃ Capacitance vs Reverse-biased Voltage 100 1000 0.1 1 10 100 Reverse-biased Voltage---(V) Capacitance---(pF) Cib Cob Power Derating Curve 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 50 100 150 200 Ambient Temperature---TA(℃) Power Dissipation---PD(W) Cutoff Frequency vs Collector Current 100 1000 1 10 100 1000 Collector Current --- IC(mA) Cutoff Frequency---FT(MHZ) VCE=5V

CYStech Electronics Corp. Spec. No. : C858K3 Issued Date : 2014.11.24 Revised Date : Page No. : 6/8 BTC2328AK3 CYStek Product Specification TO-92L Taping Outline Millimeters DIM Item Min. Max. A1 Component body width 4.70 5.10 A Component body height 7.80 8.20 T Component body thickness 3.70 4.10 d Lead wire diameter 0.35 0.55 d1 Lead wire diameter 1 0.60 0.80 P Pitch of component 12.40 13.00 P0 Feed hole pitch 12.50 12.90 P2 Hole center to component center 6.05 6.65 F1, F2 Lead to lead distance 2.20 2.80 △h Component alignment, F-R -1.00 1.00 W Tape width 17.50 19.00 W0 Hole down tape width 5.50 6.50 W1 Hole position 8.50 9.50 W2 Hole down tape position - 1.00 H Height of component from tape center 19.00 21.00 H0 Lead wire clinch height 15.50 16.50 L1 Lead wire (tape portion) 2.50 - D0 Feed hole diameter 3.80 4.20 t1 Taped lead thickness 0.35 0.45 t2 Carrier tape thickness 0.15 0.25 P1 Position of hole 3.55 4.15 △P Component alignment -1.00 1.00

CYStech Electronics Corp. Spec. No. : C858K3 Issued Date : 2014.11.24 Revised Date : Page No. : 7/8 BTC2328AK3 CYStek Product Specification Recommended wave soldering condition Soldering Time Product Peak Temperature Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3°C/second max. 3°C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds Time maintained above: −Temperature (TL) 217°C − Time (tL) 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C 260 +0/-5 °C Time within 5°C of actual peak 10-30 seconds 20-40 seconds temperature(tp) Ramp down rate 6°C/second max. 6°C/second max. Time 25 °C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface.

CYStech Electronics Corp. Spec. No. : C858K3 Issued Date : 2014.11.24 Revised Date : Page No. : 8/8 BTC2328AK3 CYStek Product Specification TO-92L Dimension *: Typical Inches C2328A Marking: Style: Pin 1.Emitter 2.Collector 3.Base 3-Lead TO-92L Plastic Package CYStek Package Code: K3 Product Name Date Code: Year+Month Year: 7→2007, 8→2008 D1 0.157 - 4.000 - Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:

  • Lead: Pure tin plated.
  • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice:
  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
  • CYStek reserves the right to make changes to its products without notice.
  • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.