BTC2059N3 CYSTEKEC | Alldatasheet

Document overview

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Technical content

Features

  • High transition frequency. ( fT = 1.0GHz, TYP. @ VCB=10V, IC=10mA, f=200MHz )
  • Very low capacitance. ( Cob = 1.4 pF , TYP. @ VCB=10V, f=1MHz )
  • Small rbb’-Cc and high gain. ( rbb’-Cc = 8ps , TYP. @VCB=10V, Ic=10mA, f=31.8MHz)
  • Small NF. ( NF = 5.5dB , TYP. @VCE=12V, Ic=2mA, f=200MHz, Rg=50ohm ) Equivalent Circuit Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-Base Voltage VCBO 25 V Collector-Emitter Voltage VCEO 18 V Emitter-Base Voltage VEBO 3 V Collector Current IC 50 mA Power Dissipation Pd 225 mW Junction Temperature Tj 150 °C Storage Temperature Tstg -55~+150 °C SOT-23 BTC2059N3 B：Base C：Collector E：Emitter

CYStech Electronics Corp. Spec. No. : C201N3 Issued Date : 2002.05.18 Revised Date : 2002.10.31 Page No. : 2/4 BTC2059N3 CYStek Product Specification Characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Test Conditions BVCBO 25 - - V IC=10uA BVCEO 18 - - V IC=1mA BVEBO 3 - - V IC=10uA ICBO - - 0.5 uA VCB=10V IEBO - - 0.5 uA VEB=2V *VCE(sat) - 0.1 0.5 V IC=20mA, IB=4mA *hFE 52 - 270 VCE=10V, IC=10mA fT 600 1000 - MHz VCB=10V, IC=10mA, f=200MHz Cob - 1.4 2.0 pF VCB=10V, IE=0A, f=1MHz Rbb’-Cc - 8 15 pF VCB=10V, IC=10mA, f=31.8MHz NF - 5.5 - dB VCE=12V, IC=2mA, f=200MHz,Rg=50ohm *Pulse Test : Pulse Width ≤380us, Duty Cycle≤2% Classification Of hFE Rank K P Q Range 52~120 82~180 120~270 Characteristic Curves Current Gain vs Collector Current 100 1000 0.1 1 10 100 1000 Collector Current ---IC(mA) Current Gain---HFE HFE@VCE=10V Saturation Voltage vs Collector Current 100 1000 1 10 100 1000 Collector Current--- IC(mA) Saturation Voltage---(mV) VCE(SAT)@IC=5IB

CYStech Electronics Corp. Spec. No. : C201N3 Issued Date : 2002.05.18 Revised Date : 2002.10.31 Page No. : 3/4 BTC2059N3 CYStek Product Specification Saturation Voltage vs Collector Current 100 1000 1 10 100 1000 Collector Current---IC(mA) Saturation Voltage---(mV) VBE(SAT)@IC=5IB Cutoff Frequency vs Collector Current 0.1 1 10 100 Collector Current---IC(mA) Cutoff Frequency---FT(GHZ) FT@VCE=10V PD - Ta 100 150 200 250 0 50 100 150 200 Ambient Temperature --- Ta(℃ ) Power Dissipation---PD(mW)

CYStech Electronics Corp. Spec. No. : C201N3 Issued Date : 2002.05.18 Revised Date : 2002.10.31 Page No. : 4/4 BTC2059N3 CYStek Product Specification SOT-23 Dimension *: Typical H 0.0005 0.0040 0.013 0.10 Notes: 1.Dimension and tolerance based on our Spec. dated Feb. 18,2002. 2.Controlling dimension: millimeters. 3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 4.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:

  • Lead: 42 Alloy ; solder plating
  • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice:
  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
  • CYStek reserves the right to make changes to its products without notice.
  • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Marking: H JKD A L GV C B S Style: Pin 1.Base 2.Emitter 3.Collector 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3