BT151-800 NJSEMI | Alldatasheet
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Technical content
'[Piodu.eti, 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Thyristors BT151-800
APPLICATIONS
- For use in applications requiring high bidirectional blocking voltage capability and high thermal cycling performance. Typical applications include motor co- ntrol, industrial and domestic lighting, heating and static switching. 500 KAG 1 cathode 2 anode 3 gate ABSOLUTE MAXIMUM RATINGS(Ta=25x:) ELECTRICAL CHARACTERISTICS (Tc=25'C unless otherwise specified) DIM A B r D F G H J K L Q R S U V mm MIN 15.70 9.90 ^.20 0.70 ^.40 4.98 2.70 0.44 13.20 1.10 2.70 2.50 1.29 6.45 8.66 MAX 15.90 10.10 4.40 0.90 3.60 5.18 2.90 0.46 13.40 1.30 2.90 2.70 1.31 6.65 8.86 SYMBOL VDRM VRRM ll(AV) IT(RMS) ITSM PGM Pc(AV) Tj Tstg PARAMETER Repetitive peak off-state voltage Repetitive peak reverse voltage Average on-stage current RMS on-state current Surge non-repetitive on-state current Peak gate power dissipation Average gate power dissipation Operating junction temperature Storage temperature MIN 800 800 100 0.5 125 -45-150 UNIT V V A A A W W SYMBOL IRRM IDRM VTM IGT VGT IH Rth(j-c) PARAMETER Repetitive peak reverse current Repetitive peak off-state current On-state voltage Gate-trigger current Gate-trigger voltage Holding current Thermal resistance CONDITIONS VRM=VRRM, VRM=VRRM,Tj=125°C VDM=VDRM, VDM=VDRM,Tj=125°C !TM= 23A VD=12V;IT=0.1A VD= 12V; IT=0.1A |T= 0.1 A; Gate Open Junction to case MIN MAX 0.02 0.5 0.02 0.5 1.75 1.5 1.6 UNIT mA mA V mA V mA °C/W Quality Semi-Conductors